category » Electronic Devices

Nanoscale Stress State Characterization of InAlN/GaN Nanoribbon HEMT Structures
  • Due to its high band gap energy and superb electronic-carrier mobilities, GaN is fast becoming the material of choice for…


Device-level Thermal Analysis of GaN-based Electronics
  • Gallium nitride (GaN)-based electronics are one of the most exciting areas of innovation for high-frequency and high-voltage semiconductor devices. Although…


Graphene Cathode-based ZnO Nanowire Hybrid Solar Cells
  • Semiconducting nanowire-based solar cells have gained interest because of their potential to achieve one-dimensional charge transport pathways and large interfacial…


Towards Highly Scaled Gate Length Asymmetrically Strained Ge Nanowire p-MOSFETs
  • Ge nanowires are of interest for future sub-10-nm gate length p-MOSFETs because of the excellent electrostatic control afforded by the…


Partial Differential Equation-Integral Equation (PDE-IE) Solvers for Electromagnetic Scattering
  • Domain decomposition concepts, combined with other high performance scientific computation technologies, provide a framework to hybridize different solvers together and…


Magnetically-assisted Assembly, Alignment, and Orientation of Micro-scale Components
  • The use of magnetic forces to improve fluidic self-assembly of micro-components has been investigated using Maxwell 3D to model the…


Enhancement of Antimonide-based P-channel FETs using Process-induced Strain
  • For decades, growth and innovation in the microelectronics industry has been fueled by the aggressive scaling of silicon complementary metal…


ZnO Nanowire Arrays for Enhanced Photocurrent in PbS Quantum Dot Solar Cells
  • Here we demonstrate a solution-processed ordered bulk heterojunction quantum dot (QD) solar cell with AM1.5G power conversion efficiencies of up…


Reliability of GaN MIS-HEMTs for Power-switching Applications
  • Engineering energy-efficient power electronic systems has recently attracted tremendous interest. Similarly, the gallium nitride metal-insulator-semiconductor high-electron-mobility transistor (GaN MIS-HEMT) fabricated…


A Unified Charge-current VS Compact Model for Graphene Transistors Applicable in Analog Circuit Simulations
  • With its rich physics, graphene has properties that make it a viable candidate for implementing electronic devices. For example, graphene…


Next-Generation Ultrafast Photo-Triggered Cathodes
  • State-of-the-art ultrafast cathodes are based on the photoelectric effect, where electrons are emitted from a flat surface using ultraviolet (UV)…


High-Current Cold Cathodes with Temporal and Spatial Emission Uniformity
  • Field emission arrays (FEAs) are an attractive alternative to mainstream thermionic cathodes, which are power hungry and require high vacuum…


Nano-scale Metal Contacts for III-V FETs
  • In the last few years, III-V compound semiconductors have emerged as a promising family of materials to replace silicon in…


A Ballistic Transport Model for III-V HEMTs and MOSFETs
  • As silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) keep scaling down in size, fundamental physical limits threaten the continued improvement on their…


Binary Nanoparticle Superlattices Formed from Highly Luminescent Core-Shell Quantum Dots and Their Photoluminescence Properties
  • Colloidal semiconductor nanocrystals or quantum dots (QDs) offer size-tunable absorption and luminescence spectra, permitting a broad range of applications in…


Nanostructured Photocathodes for Compact Coherent X-ray Sources
  • Nanostructured photocathode arrays can be used as the electron sources for the compact coherent X-ray source. Femtosecond laser pulses were…


Universal Village: Our Desired Living Conditions
  • Due to the growing populations in cities, resources for city and village residents have become scare while costs for public…


High-performance Near-infrared Light-emitting Devices using Core-shell (PbS-CdS) Colloidal Quantum-dots
  • Near-infrared light sources integrated at room temperature with any planar surface could be realized by harnessing the broad spectral tunability,…


TEM Studies of Degradation Studies of AlGaN High Electron Mobility Transistors
  • AlGaN/GaN High Electron Mobility Transistors (HEMT) are candidate for high-power amplifiers. However, for wide scale implementation reliability issues for these…


Breakdown Voltage of High-voltage GaN FETs
  • GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown…


Recombination Dynamics of Charge Carriers in Nanostructured Solar Cells
  • Nanostructured solar cells attract increasing attention as a promising photovoltaic (PV) technology[1]. Generation of free charge carriers in nanostructured PV…


Tunneling Nanoelectromechanical Switches Based on Organic Thin Films
  • With the silicon-based electronics reaching physical limits that inhibit continued improvements in device performance, much research has been directed towards…


Quantization in Bilayer Tunneling Transistors
  • Tunneling field-effect transistors (TFETs)[1] are promising for low-power applications due to their potential to achieve a subthreshold swing (SS) lower…


On the Origin of Surface Trapping Effects in AlGaN/GaN HEMTs
  • GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects…


Electronics on MoS2 and Other 2D Semiconductors
  • After enabling much of the modern world for more than 60 years, in the near future electronics will develop in…


GaN-based Transistors for Power Electronics
  • Wide band-gap III-nitride semiconductors have excellent potential for next-generation power electronics systems.  AlGaN/GaN high-electron-mobility transistors (HEMTs) have attracted great interest…


Light Modulators for Holographic Video Displays
  • In this research we seek to develop acousto-optic, guided-wave modulators in proton-exchanged lithium niobate[1] for use in holographic and other…


MIT Virtual Source GaNFET – High Voltage (MVSG-HV) Model: A Physics-based Compact Model for HV-GaN HEMTs
  • Compact models of GaN-based high-electron-mobility transistors (HEMTs) are essential for the design of power conversion circuits such as power integrated…


Towards a Self-aligned InGaAs Trigate MOSFET
  • Si-based CMOS technology is approaching the limits of its capabilities, and as a result there is extensive research into looking…


Microfluidic Electronic Detection of Protein Biomarkers
  • Immunoassays use antibodies to detect protein biomarkers, with a substantial global market and significant importance for clinical practice. However, traditional…


Fabrication Technology for InGaAs/GaAsSb Vertical Tunnel-FETs
  • With the continuing downscaling of the modern complementary metal–oxide–semiconductor (CMOS) technology, integrated circuit power consumption has become one of the…


Towards a Superlattice-source Nanowire FET with Steep Subthreshold Characteristics
  • Achieving a sharp subthreshold swing (S) is crucial to enable the supply voltage scaling that is necessary to reducing power…


High-frequency Performance of GaN HEMTs at Cryogenic Temperatures
  • The high-frequency performance of GaN-based high-electron-mobility transistors (HEMTs) has been significantly improved over the last two decades. State-of-the-art devices have…


High Linearity GaN HEMTs with Nanowire Channel
  • The performance of GaN-based high-electron-mobility transistors (HEMTs) has been significantly improved over the last two decades through extensive research[1][2][3]. However,…


Electronic Transport Studies of Thin Film Bi and Bi1-xSbx
  • Currently bulk Bi and BixSb1-x­ have the best known thermoelectric (TE) properties at cryogenic temperatures. These properties can be further…


Micron- and Submicron-thick Parylene Substrates for Transfer Printing and Solar Applications
  • Transfer printing of thin metal films enables the fabrication of both planar and suspended membrane electrodes for microelectromechanical (MEMS) sensors…


Effect of Morphology in Quantum Dot Electronics
  • Quantum dots (QDs) are exciting materials because their bandgap is dependent on the dot size. The use of QDs allows…


Degradation of GaN HEMTs under High-power and High-temperature Conditions
  • Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are…


Ionic Conduction Studies in TlBr Radiation Detector Materials
  • Detection of high-energy radiation (e.g., γ-rays) is key in nuclear non-proliferation strategies.  When a wide-band gap semiconductor detector intercepts a…