Welcome to the website of the MIT/MTL Gallium Nitride (GaN) Energy Initiative (MIT-GaN). This inter-departmental program brings together, MIT researchers and industrial partners to advance the science and engineering of GaN-based materials and devices for energy applications.
The Center explores advanced technologies and strategies that enable GaN-based materials, devices and systems to provide discriminating or break-through capabilities for a variety of system applications ranging from RF power amplification, to energy processing and power management, as well as advanced optoelectronics. The MIT-GaN is focused on GaN materials and devices which are compatible with Si fabrication technologies and works with industrial partners to accelerate the insertion of these devices into systems.