Sameer Joglekar, PhD candidate since 2011 with Prof. Tomas Palacios received the Best Poster Award at the International Workshop on Nitride Semiconductors (IWN) held in Poland the week of Aug. 24. The work which Joglekar presented, titled “Impact of AI2O3 Passivation on the Surface Properties and Schottky Barrier Height of AlGaN/GaN Transistors” was selected from
III-N Technology, Issue No.17 (May 2014) This monthly newsletter presents a selection of newest scientific publications, patent applications and press releases related to III-Nitride semiconductor materials (Ga, AlN, InN and alloys). GANEX – Newsletter No17 (May 2014) All issues on www.ganex.fr Free subscription on http://www.knowmade.com/ganex.html
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The updated list of MIT’s GaN-related publications can be found here. Please note that only the members of the MIT GaN Energy Initiative have access to this page. If you would like more information regarding how to become a member, please send an an email here.