Weerachai (Junior) Neeranartvong

Weerachai (Junior) Neeranartvong (weeracha@mit.edu) is a fourth-year undergraduate majoring in EECS (Electrical Engineering and Computer Science) and Theoretical Mathematics. He has broad interests in analog/RF circuit designs, signal processing, wireless communications, algorithms, and control systems. He loves exploring new things.

Mina Kim

Mina Kim (minahkim@mit.edu)was born in Ulsan, Korea, in 1992. She received the B.S. degree (summa cum laude) and M.S. degree in electrical engineering from Ulsan National Institute of Science and Technology (UNIST), Korea, in 2013 and 2016. Her research interests include innovative mm-wave and THz integrated circuit and system designs. From Sep. 2017, She is a Ph.D. student at Massachusetts Institute of Technology (MIT).

**Publications**

- Y. Lee, H. Yoon,
**M. Kim**, and J. Choi, “A PVT-Robust Low Reference Spur Injection-Locked Clock Multiplier Using a Voltage-Domain Period-Calibrating Loop”, IEEE Symp. VLSI Circuits Dig., Jun. 2016 **M. Kim**, S. Choi, and J. Choi, “A Low-Jitter and Fractional-Resolution Injection-Locked Clock Multiplier Using a DLL-Based Real-time PVT-Calibrator with Replica-Delay Cells,” IEEE J. Solid-State Circuits, Oct. 2015**M. Kim**, S. Choi, and J. Choi, “A 450-fs jitter PVT robust fractional-resolution injection-locked clock multiplier using a DLL-based calibrator with replica-delay-cells”, in IEEE Symp. VLSI Circuits DIg., Jun. 2015- Y. Lee,
**M. Kim**, T. Seong and J. Choi, “A Low Phase Noise Injection-Locked Programmable Reference Clock Multiplier with a Two-Phase PVT-Calibrator for ¥Ä¥Ò PLLs”, IEEE Transactions on Circuits and Systems I (IEEE T-CAS I), Mar. 2015

Muhammad I. Khan

Ibrahim (ibrahimw@mit.edu) received the B.S. degree in Electrical engineering from National University of Science and Technology (NUST), Islamabad, Pakistan, in 2012, and the M.S. degree in Electrical engineering from Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 2016. His research interests include THz integrated circuits especially THz detectors and THz imaging systems.

**Selected Awards**

- Recipient of Silver Medal for academic performance by NUST
- Awarded Bronze Medal by Federal Board Pakistan for HSSC among 100,000 participants

**Potential Publications**

- Ibrahim Wasiq, Suna-Kim, Dae-Woong Park, Hyoung-Jun Kim, Seok-Kyun Han, Sang-Gug Lee “Non-Linear Analysis of Non-Resonant THz Response of MOSFET and Implementation of a High Responsivity Cross-coupled THz Detector” IEEE Transaction on Terahertz Science and Technology
- Ibrahim Wasiq, R. U. Dzuhri, Dae-Woong Park, Hyoung-Jun Kim, Sang-Gug Lee “Near-Field Sensor for 0.5 THz using Third Harmonic Injection-Locked 167 GHz Super Regenerative Receiver” IEEE Microwave and Wireless Components Letters
- Suna-Kim, Dae-Woong Park, Ibrahim Wasiq, Sang-Gug Lee “Effects of source and drain junction area on responsivity of CMOS THz detector” IEEE Microwave and Wireless Components Letters

Ronald Davis

Ronald Davis III (radavis4@mit.edu) is a senior majoring in Electrical Engineering and Physics. His research interests include signals processing, communications, and applied physics, among other areas. He enjoys playing tennis, writing, video games, and philosophy.

Xiang Yi

Xiang Yi (S’11–M’13) (xiangyi@mit.edu) received the B.E. degree, M.S. degree and Ph.D. degree from Huazhong University of Science & Technology (HUST) in 2006, South China University of Technology (SCUT) in 2009, Nanyang Technological University (NTU) in 2014, respectively.

He is currently working as a Postdoctoral Associate in Massachusetts Institute of Technology (MIT). He was a Research Fellow in NTU from 2014 to 2017. His research interests include radio frequency (RF), millimetre-wave (mm-wave), and Terahertz frequency synthesizers and transceiver systems.

**AWARDS**

- 2013, ISSCC 2013 Silkroad Award (the first & the only Silkroad Award in Singapore)
- 2013, IEEE Solid-State Circuits Society Student Travel Grant Award

**PUBLICATIONS**

**X. Yi**, C. C. Boon, H. Liu, J. Lin, and W. M. Lim, “A 57.9-to-68.3 GHz 24.6 mW frequency synthesizer with in-phase injection-coupled QVCO in 65 nm CMOS Technology,” IEEE J. Solid-State Circuits, vol. 49, no. 2, pp.347–359, Feb. 2014.**X. Yi**, C. C. Boon, H. Liu, J. Lin, J. C. Ong, and W. M. Lim, “A 57.9-to-68.3GHz 24.6mW frequency synthesizer with in-phase injection-coupled QVCO in 65nm CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2013, pp. 354–355.**X. Yi**, C. C. Boon, J. Sun, N. Huang, and W. M. Lim, “A low phase noise 24/77 GHz dual-band sub-sampling PLL for automotive radar applications in 65 nm CMOS technology,” in Proc. ASSCC, Nov. 2013, pp. 417–420.**X. Yi**, C. C. Boon, J. Lin, and W. M. Lim, “A 100 GHz transformer-based varactor-less VCO with 11.2% tuning range in 65nm CMOS technology,” in Proc. ESSCIRC, Sep. 2012, pp. 293–296.**X. Yi**, K. Yang, Z. Liang, B. Liu, K. Devrishi, C. C. Boon, C. Li, G. Feng, D. Regev, S. Shilo, F. Meng, H. Liu, J. Sun, G. Hu, and Y. Miao, “A 65nm CMOS carrier-aggregation transceiver for IEEE 802.11 WLAN applications,” in RFIC Symp. Dig. Papers, May. 2016, pp.67–70.**X. Yi**, Z. Liang, G. Feng, C. C. Boon, and F. Meng, “A 93.4-to-104.8GHz 57mW fractional-N cascaded sub-sampling PLL with true in-phase injection-coupled QVCO in 65nm CMOS,” in RFIC Symp. Dig. Papers, May 2016, pp.122–125.**X. Yi**, C. C. Boon, M. A. Do, K. S. Yeo, and W. M. Lim, “Design of ring-oscillator based injection-locked frequency dividers with single-phase inputs,” IEEE Microw. Wireless Compon. Lett., vol. 21, no. 10, pp. 559–561, Oct. 2011.**X. Yi**, C. C. Boon, G. Feng, and Z. Liang, “An eight-phase in-phase injection-coupled (IPIC) VCO in 65 nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 27, no. 3, pp. 299–301, Mar. 2017.**X. Yi**, C. C. Boon, J. Lin, M. A. Do, K. S. Yeo, and W. M. Lim, “A divide-by-two injection-locked frequency divider with 13-GHz locking range in 0.18-μm CMOS technology,” in IEEE Proc. of ISIC, Dec. 2011, pp. 216–219.**X. Yi**, X. Chen, and R. Yao, “Frequency-adjustable clock oscillator based on frequency-to-voltage converter,” IET Electron. Lett., vol. 45, no. 11, pp. 530–532, Nov. 2009.- C. C. Boon and
**X. Yi**, “A 10-67 GHz 1.44 mW 20.7 dB gain VGA-embedded downconversion mixer with 40 dB variable gain range,” IEEE Microw. Wireless Compon. Lett., vol. 24, no. 7, pp. 466–468, Jul. 2014. **X. Yi**, R. Yao, “A high precision clock oscillator based on frequency-to-voltage converter,” Microelectronics, vol. 39, no. 3, pp. 344–347,351, Mar. 2009.- N. Huang, C. C. Boon, and
**X. Yi**, “A dual-band 24 and 77 GHz CMOS LNA for automotive radars,” in Int. Conf. on Electronics, Information and Communication (ICEIC), Feb. 2013, pp. 44–45. - N. Huang, C. C. Boon, and
**X. Yi**, “Formulas for the analysis of effect of feedback on noise performance,” in Int. Conf. on Electronics, Information and Communication (ICEIC), Feb. 2013, pp. 1–3. - N. Huang,
**X. Yi**, C. C. Boon, X. Zhao, J. Sun, and G. Feng, “Design of a fully integrated CMOS dual K- and W- band lumped Wilkinson power divider,” in IEEE Int. Midwest Symp. Circuits Syst., Aug. 2013, pp. 788–791. - H. Liu, X. Zhu, C. C. Boon,
**X. Yi**, M. Mao, and W. Yang, “Design of ultra-low phase noise and high power integrated oscillator in 0.25μm GaN-on-SiC HEMT technology,” IEEE Microw. Wireless Compon. Lett., vol. 24, no. 2, pp. 120–122, Feb. 2014. - J. Lin, C. C. Boon,
**X. Yi**, and L. W. M., “A compact single stage V-band CMOS power amplifier with 9.6dBm output power & 17.3% efficiency,” IEEE Microw. Wireless Compon. Lett., vol. 24, no. 3, pp. 182–184, Mar. 2014. - J. Lin, C.C. Boon,
**X. Yi**, and G. Y. Feng, ” A 50GHz – 59 GHz CMOS injection locking power amplifier,” IEEE Microw. Wireless Compon. Lett., vol. 25, no. 1, pp. 52–54, Jan. 2015. - H. Liu, X. Zhu, C. C. Boon,
**X. Yi**, “Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN-on-SiC high electron-mobility transistors technology,” IET Microwaves, Antennas & Propagation, vol. 9, no. 8, pp. 795–801, Aug. 2015. - H. Liu, X. Zhu, C. C. Boon,
**X. Yi**, L. Kong, “A 71 dB 150 μW variable-gain amplifier in 0.18 μm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 25, no. 5, pp. 334–336, May 2015. - N. Huang,
**X. Yi**, C.C. Boon, X. He, G. Feng, W. M. Lim, and X. Zhu, “A CMOS W-band 4X quasi-subharmonic mixer,” IEEE Microw. Wireless Compon. Lett., vol. 25, no. 6, pp. 385–387, Jun. 2015. - J. Sun, C. C. Boon,
**X. Yi**, W. M. Lim and F. Meng, “Design and analysis of a K-band wideband VCO with robust start-up and frequency boost,” IET Microwaves, Antennas & Propagation, vol. 9, no. 14, pp. 1623–1631, Nov. 2015. - J. Sun, C. C. Boon, F. Meng,
**X. Yi**and W. M. Lim, “A V-band CMOS divide-by-three ILFD with frequency-dependent injection enhancement,” IEEE Microw. Wireless Compon. Lett., vol. 25, no. 11, pp. 727–729, Nov. 2015. - J. Sun, C. C. Boon, X. Zhu,
**X. Yi**, K. Devrishi and F. Meng, “A low-power low-phase-noise VCO with self-adjusted active resistor,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 3, pp. 201–203, Mar. 2016. - G. Feng, C. C. Boon, F. Meng,
**X. Yi**, and C. Li, “An 88.5 -110 GHz CMOS low-noise amplifier for millimeter-wave imaging applications,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 2, pp. 134–136, Feb. 2016. - H. Liu, X. He, X. Zhu , C. C. Boon,
**X. Yi**and L. Kong, “A wideband analog-controlled variable-gain amplifier with dB-linear characteristic for high-frequency applications,” IEEE Trans. Microw. Theory Tech., vol. 64, no. 2, pp.533–540, Feb. 2016. - N. Huang, C.C. Boon, X. Zhu,
**X. Yi**, X. He, G.Y. Feng, W.M. Lim, B. Liu, “A 65-nm CMOS LNA for bolometer applications,” Journal of Infrared, Millimeter, and Terahertz Waves, vol. 37, no. 4, pp. 356–374, Apr. 2016. - G. Feng, C. C. Boon, F. Meng, and
**X. Yi**, “A 100-GHz 0.21-K NETD 0.9-mW/pixel charge-accumulation super-regenerative receiver in 65-nm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 26, no. 7, pp. 531–533, Jul. 2016. - F. Meng, K. Ma, K. S. Yeo, C. C. Boon,
**X. Yi**, etc., “A Compact 57-67 GHz bidirectional LNAPA in 65-nm CMOS technology,” IEEE Microw. Wireless Compon. Lett., accepted. - G. Feng, C. C. Boon, F. Meng, and
**X. Yi**, etc., “Pole-Converging Intra-Stage Bandwidth Extension Technique for Wideband Amplifiers,” IEEE J. Solid-State Circuits, vol. 52, no. 3, pp.769–780, Mar. 2017. - D. Regev, S. Shilo, D. Ezri, J. Zhang,
**X. Yi**and C. C. Boon, “Carrier Aggregation Receiver Employing Direct Re-centred Offset Receivers,” 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, March 2017.

Email: jmac_3@mit.edu

Tel #: (617) 253-6857.

Mohamed I. Ibrahim

Mohamed I. Ibrahim (ibrahimm@mit.edu) received the B.Sc. (with honors) and M.Sc. degrees in electrical engineering from Ain Shams University, Cairo, Egypt, in 2012 and 2016, respectively. From 2012 to 2016, he was working as a teaching/research assistant at the Microwave and Antenna Research Lab (MARL) at the Electronics and Communication Engineering department at the same university developing Metamaterial inspired antennas and microwave passive planar structures. Currently he is a graduate Ph.D. student at the Electrical Engineering and Computer Science (EECS) department at the Massachusetts Institute of Technology (MIT).

**Publications**

[1] M. I. Ibrahim and A. M. E. Safwat, “Metamaterial inspired penta-band monopole antenna,” IEEE Antennas and Wireless Propagation Letters, vol. 12, pp. 1684-1687, 2013.

[2] M. I. Ibrahim, S. I. Elhenawy and A. M. E. Safwat, “Dual-Band Orthogonal-Beam Multi-Standard CRLH Loop antenna,” in Proc. of European Microwave Conference (EuMC), Nuremberg, Germany, Oct. 2013.

[3] M. I. Ibrahim, S. I. Elhenawy and A. M. E. Safwat, “60 GHz Artificial Magnetic Conductor Loaded Dipole Antenna in 65 nm CMOS Technology,” in Proc. of European Microwave Conference (EuMC), Rome, Italy, Oct. 2014.

[4] M. I. Ibrahim, A. M. E. Safwat and H. El-Hennawy , “Single/Dual-Band CSRR-Loaded Differential-Fed Square Patch Antenna with Monopolar Radiation Pattern,” in proc. of the National radio science conference (NRSC), Aswan, Egypt, Feb. 2016.

[5] M. M. Mostafa, M. I. Ibrahim, T. M. Abuelfadl and A. M.E.Safwat, “An optically transparent wideband high impedance surface,” in Proc. of European Microwave Conference (EuMC), London, England, Oct. 2016.