Publications

Books and contributions to books:

  1. J.L. Hoyt, “Substitutional Carbon Incorporation and Electronic Characterization of Si1-yCy and SiGeC Grown by RTCVD,” book chapter for volume edited by S. Pantelides and S. Zollner, Silicon-Germanium Carbon Alloys, Growth, Properties and Applications, (Taylor & Francis, NY, 2002), pp. 59–89.
  2. Co-edited Conference Proceedings, Strained Layer Epitaxy Materials, Processing, and Device Applications, edt. E. Fitzgerald, J. Hoyt, K.-Y. Cheng and J. Bean, Symposium Proceedings, Vol 379, (Mat. Res. Soc., Pittsburgh, PA, 1995).
  3. J.L. Hoyt, “Rapid Thermal Processing-based Epitaxy,” book chapter in Rapid Thermal Processing: Science and Technology, edt. by R.B. Fair, (Academic Press, San Diego, CA, 1993), pp. 13-43.

Journal articles and conference presentations:

  1. S.A. Hadi, P. Hashemi, N. DiLello, E. Polyzoeva, A. Nayfeh, and J.L. Hoyt, “Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-SiGe/crystalline-Si heterojunction solar cells,” AIP Advances,  v 3, n 5, p 052119,  May 2013.
  2.  J.T. Teherani, S. Agarwal, E. Yablonovitch , J.L. Hoyt and D.A. Antoniadis, “Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors,” IEEE Electron Device Letters,  v 34, n 2, p 298-300,  Feb. 2013.
  3. W. Chern, P. Hashemi, J.T. Teherani, T. Yu, Y. Dong, G. Xia, D.A. Antoniadis, and J.L. Hoyt, “High Mobility High-κ-All-Around Asymmetrically-Strained Germanium Nanowire Trigate p-MOSFETs”. Presented at IEEE International Electron Devices Meeting, Dec. 2012.
  4. N.A. DiLello, D.K. Johnstone, and J.L. Hoyt, “Characterization of dark current in Ge-on-Si photodiodes,” Journal of Applied Physics, v 112, n 5, p 054506, Sept. 2012.
  5. P. Hashemi, W. Chern, H. Lee, J.T. Teherani, Y. Zhu, J. Gonsalvez, G.G. Shahidi, and J.L. Hoyt,  “Ultrathin strained-Ge channel P-MOSFETs with high-K/metal gate and sub-1-nm equivalent oxide thickness,” IEEE Electron Device Letters, v 33, n 7, p 943-5, July 2012.
  6. S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L.Hoyt, “Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56%,”  2012 IEEE 38th Photovoltaic Specialists Conference (PVSC), p 000005-8, 2012.
  7. J.T. Teherani, W. Chern, D.A. Antoniadis, J.L. Hoyt, L. Ruiz, C.D. Poweleit, and J. Menendez, “Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates,” Physical Review B (Condensed Matter and Materials Physics), v 85, n 20, p 205308, 15 May 2012.
  8. S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L. Hoyt, “Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells”,  MRS Proceedings, Volume 1447, 2012.
  9. (Invited)  P. Hashemi, W. Chern, and J.L. Hoyt, “Strained Ge for Planar and Non-Planar P-MOSFETs,” International Symposium on Development of Core Technologies for Green Nanoelectronics, National Museum of Emerging Science and Innovation (Miraikan), Tokyo, Japan, March, 2012.
  10. Sarah Paydavosi,  Katherine E. Aidala, Patrick R. Brown, Pouya Hashemi, Geoffrey J. Supran, Timothy P. Osedach, Judy L. Hoyt, and Vladimir Bulovic, “Detection of charge storage on molecular thin films of tris(8- hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: A candidate system for high storage capacity memory cells,”  Nano Letters, v 12, n 3, p 1260-1264, March 14, 2012.
  11. P. Hashemi and J.L. Hoyt, “High Hole-Mobility Strained-Ge/Si0.6 Ge0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness,” IEEE Electron Device Letters, v 33, n 2, p 173-5, Feb. 2012.
  12. S.A. Hadi, A. Nayfeh, P. Hashemi, and J.L. Hoyt, “a-Si/c-Si1-xGex/c-Si heterojunction solar cells,” in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 191-194, 2011.
  13. S.A. Hadi, P. Hashemi, A. Nayfeh, and J.L. Hoyt, “Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements,” ECS (Electrochemical Society) Transactions, Vol. 41 (4), pp. 3-14, 2011.
  14. S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, “High-Density Charge Storage on Molecular Thin Films- Candidate Materials for High Storage Capacity Memory Cells,” IEEE International Electron Device Meeting (IEDM ’11), Washington DC, USA, December 2011.
  15. A. Khilo, S.J. Spector, M.E. Grein, A.H. Nejadmalayeri, C.W. Holzwarth, M.Y. Sander, M.S. Dahlem, M.Y. Peng, M.W. Geis, N.A. DiLello, J.U. Yoon, A. Motamedi, J.S. Orcutt, J.P. Wang,  C.M. Sorace-Agaskar, M.A. Popovic, Jie Sun; Gui-Rong Zhou; Hyunil Byun; Jian Chen; J.L. Hoyt, H.I. Smith, R.J. Ram, M. Perrott, T.M. Lyszczarz, E.P. Ippen, F.X. Kartner, “Photonic ADC: overcoming the bottleneck of electronic jitter”, Optics Express, V 20, n 4, pp. 4454-69, 21 Nov. 2011.
  16. (Invited) J. Hoyt, P. Hashemi, and W. Chern, “Strained Nanowire MOSFETs,” invited talk presented at the 220th Electrochemical Society (ECS), Session E9-ULSI Process Integration, Boston, Massachusetts, USA, October 2011.
  17. (Invited) Pouya Hashemi, H. -S. Lee, M. A. Bhuiyan, D. A. Antoniadis, and J. L. Hoyt,  “High Mobility Strained Ge Channels and Gate Dielectrics for Planar and Non-Planar p-MOSFETs,” Mat. Res. Soc. Meeting, San Francisco, April 27, 2011.
  18. N. A. DiLello and J.L. Hoyt, “Impact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide,” Appl. Phys. Lett. 99, 033508 (2011).
  19. M. Kim, P. Hashemi, and J.L. Hoyt, “Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth,” Appl. Phys. Lett., 97, 262106 (2010
  20. P. Hashemi, J.T. Teherani, and J.L. Hoyt, “Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape,” to be presented at IEEE International Electron Device Meeting (IEDM 2010), San Francisco, USA, Session 34.5 December 2010.
  21. P. Hashemi, C.D. Poweleit, M. Canonico, and J.L. Hoyt, “Advanced Strained-Silicon and Core-Shell Si/Si1-xGex Nanowires for CMOS Transport Enhancement,” to appear in ECS (Electrochemical Society) Transactions, October 2010.
  22. L. Gomez, C. Ni Chleirigh, P. Hashemi, and J.L. Hoyt, “Enhanced Hole Mobility in High-Ge Content Asymmetrically Strained-SiGe p-MOSFETs,” IEEE Electron Device Letters, vol. 31, no. 8, pp. 782 – 784, August, 2010.
  23. A.K. Sood, R.A. Richwine, Y.R. Puri, N. DiLello, J.L. Hoyt, T.I. Akinwande, N. Dhar, S. Horn, R.S. Balcerak, T.G. Bramhall, “Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor,” Proceedings of the SPIE – The International Society for Optical Engineering, v 7660, p 76600L, 2010.
  24. Guangrui Xia and J.L. Hoyt, “Si-Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress,” Applied Physics Letters, v 96, n 12, p 122107 (3 pp.), 22 March 2010.
  25. P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D.A. Antoniadis and J.L. Hoyt, “Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire MOS¬FETs”, Appl. Phys. Lett. 96 (6), p. 063109, Feb. 2010.
  26. J.S. Orcutt, A. Khilo, M.A. Popovic, C.W. Holzwarth, H. Li, J. Sun, B. Moss, M.S. Dahlem, E.P. Ippen, J.L. Hoyt, V. Stojanovic, F.X. Kärtner, H.I. Smith, and R.J. Ram, “Photonic integration in a commercial scaled bulk-CMOS process,” Source: 2009 International Conference on Photonics in Switching, PS ’09, 2009, 2009 International Conference on Photonics in Switching, PS ’09, p. 2.
  27. L. Gomez, P. Hashemi, and J.L. Hoyt, “Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs,” IEEE Transactions on Electron Devices vol.56, no.11, pp.2644-2651, Nov. 2009.
  28. O.M. Nayfeh, J.L. Hoyt and D.A. Antoniadis, “Strained Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior,” IEEE Transactions on Electron Devices, vol. 56, no. 10, pp. 2264-2669, Oct. 2009.
  29. P. Hashemi, L. Gomez, and J.L. Hoyt, “Gate-All-Around N-MOSFETs with Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter,” IEEE Electron Device Letters, Vol. 30, No. 4, pp. 401-403, April 2009.
  30. A.K. Sood, R.A. Richwine, Y.R. Puri, N. DiLello, J.L. Hoyt, T.I. Akinwande, S. Horn, R.S. Balcerak, G. Bulman, R. Venkatasubramanian, R., A.I. D’Souza, T.G. Bramhall, “Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor,” Proceedings of the SPIE v 7298, p 72983D, 2009.
  31. C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. Holzwarth, M.A. Popovic, Hanqing Li, H.I. Smith, J.L. Hoyt, F.X. Kartner, R.J. Ram, V. Stojanovic, and K. Asanovic, IEEE Micro, V. 29 (4), “Building many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,” p. 8-21, July-Aug. 2009.
  32. C.W. Holzwarth, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N.A. DiLello, F. Gan, J.L. Hoyt, E.P. Ippen, F.X. Kartner, A. Khilo, J. Kim, A. Motamedi, J.S. Orcutt, M. Park, M. Perrott, M. Popovic, R.J. Ram, H.I. Smith, G.R. Zhou, S.J. Spector, T. Lyszczarz, M.W. Geis, D.M. Lennon, J.U. Yoon, M. Grein, R.T. Schulein, S. Frolov, A. Hanjani, J. Shmulovich, “High speed analog-to-digital conversion with silicon photonics,” Proceedings of the SPIE v 7220, p 72200B (15 pp.), 2009.
  33. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt “Electron Transport in Gate-All-Around Uniaxial Tensile Strained-Si Nanowire n-MOSFETs,” IEEE International Electron Device Meeting (IEDM’08), San Francisco, USA, session 35-3, pp. 865-868, December 2008.
  34. C. Ni Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, and J. L. Hoyt, “Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs,” IEEE Trans. Electron Devices, Volume 55, Issue 10, Oct. 2008, pp. 2687 – 2694.
  35. L. Gomez, P. Hashemi, and J.L. Hoyt, “Hole Velocity Enhancement in Sub-100nm Gate Length Strained-SiGe Channel p-MOSFETs on Insulator,” IEEE SOI Conference, New Paltz, NY, USA, October 2008.
  36. P. Hashemi, M. Canonico, J.K.W. Yang, L. Gomez, K.K. Berggren, and J. L. Hoyt, “Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around n-MOSFETs,” ECS (Electrochemical Society) Transactions, Vol. 16, No. 10, p.p. 57-68, October 2008.
  37. Meekyung Kim, Oluwamuyiwa Olubuyide, Jung Yoon, and Judy Hoyt, “Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications,” ECS (Electrochemical Society) Transactions, Vol. 16, No. 10, pp. 837-847, October 2008.
  38. J.L. Hoyt, P. Hashemi, and L. Gomez, “Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs, ” in ECS Transactions , Vol. 16, No. 10, p.p. 731-734, October 2008.
  39. O.M. Nayfeh, C. Ni Chleirigh, J. Hennessy, L. Gomez, J.L. Hoyt and D.A. Antoniadis, “Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions,” IEEE Electron Device Letters, v 29, n 9, Sept. 2008, p 1074-7.
  40. O.M. Nayfeh, C. Ni Chleirigh, J.L. Hoyt and D.A. Antoniadis, “Measurement of enhanced gate-controlled band-to-band tunneling in highly strained silicon-germanium diodes,” IEEE Electron Device Letters, v 29, n 5, May 2008, p 468-70.
  41. C. Ni Chleirigh, XiaoRu Wang, G. Rimple, Yun Wang, N.D. Theodore, M. Canonico, and J.L. Hoyt, “Super critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing,” Journal of Applied Physics, v 103, n 10, 15 May 2008, p 104501-1-4.
  42. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt “Performance Enhancement in Uniaxially Tensile Strained-Si Gate-All-Around Nanowire n-MOSFETs”, presented at IEEE Device Research Conference (DRC 2008), Santa Barbara, CA, USA, p. 185, June 2008.
  43. C.W. Holzwarth, J.S. Orcutt, Hanqing Li, M.A. Popovic, V. Stojanovic, J.L. Hoyt, R.J. Ram, H.I. Smith, “Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes,” 2008 Conference on Lasers and Electro-Optics (CLEO), p 2 pp., May 2008.
  44. L. Gomez, M. Canonico, M.K. Kim, P. Hashemi , and J.L. Hoyt, “Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator,” Journal of Electronic Materials, Vol. 37, No. 3, pp. 240-244, March 2008.
  45. P. Hashemi, L. Gomez, J.L. Hoyt, M.D. Robertson, M. Canonico, “Asymmetric strain in nano-scale patterned strained-Si/strained-Ge/strained-Si heterostructures on insulator,” Applied Physics Letters, Vol. 91, 083109, Aug. 2007.
  46. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt “Stress in Nano-Scale Patterned Strained Silicon/Strained Germanium/Strained Silicon Heterostructures on Insulator”, presented at the Electronic Material Conference (EMC 2007), Notre Dame, IN, USA, p. 105, June 2007.
  47. Hyun-Jin Cho, B.J. Greene, J.L. Hoyt, J.D. Plummer, “Mechanism of solid phase crystallization of prepatterned nanoscale a-Si pillars,” Source: Journal of Applied Physics, v 101, n 10, p 104905-1-5, 15 May 2007.
  48. L. Gomez, I. Aberg, and J.L. Hoyt, “Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm,” IEEE EDL 28 (4), p. 285, April, 2007.
  49. T. Barwicz, H. Byun, F. Gan, C.W. Holzwarth, M.A. Popovic, P.T. Rakich, M.R. Watts, E.P. Ippen, F.X. Kartner, H.I. Smith, J.S. Orcutt, R.J. Ram, V. Stojanovic, O.O. Olubuyide, J.L. Hoyt, S. Spector, S.; M.Geis, M. Grein, T. Lyszczarz, J.U. Yoon, “Silicon photonics for compact, energy-efficient interconnects,” Journal of Optical Networking, v 6, n 1, p 63-73, January 2007.
  50. S.J. Spector, T.M. Lyszczarz, M.W. Geis, D.M. Lennon, J.U. Yoon, M.E. Grein, R.T. Schulein, R. Amataya, J. Birge, J. Chen, H. Byun, F. Gan, C.W. Holzwarth, J.L. Hoyt, E.P. Ippen, F.X. Kartner, A. Khilo, O.O. Olubuyide, J.S. Orcutt, M. Park, M. Perrott, M.A. Popovic, T. Barwicz, M. Dahlem, R.J. Ram, H.I. Smith, “Integrated optical components in silicon for high speed analog-to-digital conversion,” Proceedings of SPIE – The International Society for Optical Engineering, v 6477, 2007, Silicon Photonics II.
  51. Guangrui (Maggie) Xia, Judy L. Hoyt and Michael Canonico, “Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics, Vol. 101, p. 044901 (2007)
  52. J.S. Orcutt, O.O. Olubuyide, N. DiLello, J.L. Hoyt and R.J. Ram, “Characterization and performance analysis of LPCVD germanium-on-silicon C-band photodiodes,” Photonics in Switching, 2007, p 92-4, 2007.
  53. J.S. Orcutt, O.O. Olubuyide, N. DiLello, J.L. Hoyt and R.J. Ram, “Spatial characterization of germanium-on-silicon C-band PIN photodiodes,” CLEO ’07. 2007 Conference on Lasers and Electro-Optics, p 1550-1, 2007.
  54. Guangrui (Maggie) Xia, Michael Canonico, and Judy L. Hoyt, “Interdiffusion in strained Si/strained SiGe epitaxial heterostructures,” Semicond. Sci. Technol. 22, pp. S55-S58, Nov. 2006.
  55. C. Ní Chléirigh, X. Wang, G. Rimple, Y. Wang, M. Canonico, N. D. Theodore, O. O. Olubuyide and J. L. Hoyt, “Laser Spike Annealing of Strained Si/ Strained Si 0.3Ge 0.7/ Relaxed Si 0.7Ge 0.3 Dual Channel High Mobility p-MOSFETs,” in ECS Trans., vol. 3, no. 2, pp. 355-362, Oct., 2006.
  56. C. Ní Chléirigh, O. O. Olubuyide and J.L. Hoyt, “Influence of Strained Si 1-yGe y Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0”, in ECS Trans., vol. 3, no. 7, pp. 963-972, Oct., 2006.
  57. C. Ní Chléirigh, I. Åberg, G. Xia, and J.L. Hoyt, “Strained Heterostructure p-MOSFETs,” Second International Workshop on New Group IV Semiconductor Nanoelectronics,” Tohoku Univ., Sendai, Japan, October 2-3, 2006 (Invited Presentation).
  58. D.A. Antoniadis, A. Khakifirooz, I. Aberg, and J.L. Hoyt, “Channel Material Innovations for Continuing the Historical MOSFET Performance Increase with Scaling”, ECS Trans., vol. 3, no. 3, pp. 3-15, Oct. 2006.
  59. D.A. Antoniadis, I. Aberg, C. Ni Chleirigh, O.M. Nayfeh, A. Khakifirooz, and J.L. Hoyt, “Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations,” IBM J. Res. & Dev. Vol, 50, No. 4/5, July/Sept. 2006, pp. 363 – 375.
  60. G. Xia, M. Canonico, and J.L. Hoyt, “Interdiffusion in SiGe/Si Heterostructures,” 2006 International SiGe Technology and Device Meeting, May, 2006, (IEEE Cat. No. 06EX1419), p 286-287.
  61. O. O. Olubuyide, D.T. Danielson, L.C. Kimerling, and J.L. Hoyt, “Impact of Seed Layer on Material Quality of Epitaixal Germanium on Silicon Deposited by Low Pressure Chemical Vapor Deposition,” Thin Solid Films, Vol. 508, 2006, pp. 14-19.
  62. I. Aberg, C. Ni Chleirigh, and J.L. Hoyt, “Ultrathin-Body Strained-Si and SiGe Heterostructure-on-Insulator MOSFETs,” IEEE Trans. Elec. Dev., May 2006, pp. 1021 – 1029.
  63. G. Xia, O.O. Olubuyide, J.L. Hoyt, and M. Canonico, “Strain dependence of Si- Ge interdiffusion in epitaxial Si/Si1-yGey/Si heterostructures on relaxed Si1-xGex substrates,” Appl. Phys. Lett., vol. 88, pp. 13507:1-3, Jan.2006
  64. F.X. Kartner, R. Amataya, G. Barbastathis, H. Byun, F. Gan, C.W. Holzwarth, J.L. Hoyt, E.P. Ippen, O.O. Olubuyide, J.S. Orcutt, M. Park, M. Perrott, M.A. Popovic, P.T. Rakich, R.J. Ram, H.I. Smith, M. Geis, M. Grein, T. Lyszczarz, S. Spector, J.U. Yoon, “Silicon electronic photonic integrated circuits for high speed analog to digital conversion,” 2006 3rd IEEE International Conference on Group IV Photonics (IEEE Cat. No. 06EX1276), p 3 pp., 2006
  65. F.X. Kartner, S. Akiyama, G. Barbastathis, T. Barwicz, H. Byun, D.T. Danielson, F. Gan, F. Grawert, C.W. Holzwarth, J.L. Hoyt, E.P. Ippen, M. Kim, L.C. Kimerling, J. Liu, J. Michel, O.O. Olubuyide, J.S. Orcutt, M. Park, M. Perrott, M.A. Popovic, R.T. Rackich, R.J. Ram, H.I. Smith, M.R. Watts, “Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion”, Proceedings of SPIE – The International Society for Optical Engineering, v 6125, 2006, Silicon Photonics.
  66. D.H. Anjum, J. Li,, G. Xia, J.L. Hoyt and R. Hull, “Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy,” in Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices (Materials Research Society Symposium Proceedings Vol.864), 2005, p 131-6
  67. R.Z. Lei, W. Tsai, I. Aberg, T.B. O’Reilly, J.L. Hoyt, D.A. Antoniadis, H.I.Smith, A.J. Paul, M.L. Green, J. Li, and R. Hull, “Strain relaxation in patterned strained silicon directly on insulator structures,” Appl. Phys. Lett., vol. 87, pp.251926:1-3, 2005
  68. I. Åberg, T.A. Langdo, Z.-Y. Cheng, A. Lochtefeld, I. Lauer, D.A. Antoniadis, and J.L. Hoyt, “Transport and Leakage in Super-Critical Thickness Strained Silicon on Insulator MOSFETs with Strained Si Thickness up to 135 nm ,” IEEE SOI Conference, Oct. 2005.
  69. J. Li, D. Anjum, R. Hull, G. Xia, and J.L. Hoyt, Nanoscale stess analysis of strained-Si metal-oxide-semicondutor field-effect transistor by quantitative electron diffraction contract imaging. Applied Physics Letters, 2005. 87 p.222111-222113.
  70. I. Aberg and J.L. Hoyt, “Hole Transport in UTB MOSFETs in Strained-Si Directly on Insulator With Strained-Si Thickness Less Than 5 nm,” IEEE Elec. Dev. Lett., 26 (9), Sept. 2005, pp. 661-663.
  71. C. Ni Chleirigh, O.O. Olubuyide, and J.L. Hoyt, “Mobility and Sub-threshold Characteristics in High-Mobility Dual-Channel Strained Si/Strained SiGe p-MOSFETs,” IEEE Device Research Conference, June 2005, Santa Barbara, CA.
  72. O. O. Olubuyide, D.T. Danielson, L.C. Kimerling, and J.L. Hoyt, “Impact of Seed Layer on Material Quality of Epitaixal Germanium on Silicon Deposited by Low Pressure Chemical Vapor Deposition,” 4th Intl. Conf. on Silicon Epitaxy and Heterostructures, Awaji Island, Japan, May, 2005.
  73. I. Aberg, C. Ni Chleirigh, and J.L. Hoyt, “Thermal Processing and Mobility in Strained Heterostructures on Insulator,” in ECS Proceedings: Advanced gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes and Equipment,” Vol. PV2005-05, pp. 505-514.
  74. I. Aberg, C. Ni Chleirigh, O.O. Olubuyide, X. Duan, and J.L. Hoyt, “High Electron and Hole Mobility Enhancements in Thin-Body Strained Si/Strained SiGe/Strained SI Heterostructure on Insulator,” IEEE IEDM Tech. Digest, Dec. 2004, pp. 173-176.
  75. H.M. Nayfeh, J.L. Hoyt, and D.A. Antoniadis, “A physically based analytical model for the threshold voltage of strained- Si n-MOSFETs,” IEEE Trans. Elec. Dev. 51(12), Dec. 2004, pp. 2069-2072.
  76. Guangrui Xia, H.M. Nayfeh, M.L. Lee, E.A. Fitzgerald, D.A. Antoniadis, D.H. Anjum, J. Li, R. Hull, N. Klymko, and J.L. Hoyt, “Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs,” IEEE Trans. Elec. Dev. 51(12), Dec. 2004, pp. 2136-2144.
  77. J.L. Hoyt, “Enhanced Mobility CMOS,” ECS Proceedings PV 2004-7 (Electrochemical Society, Pennington, NJ, 2004), pp. 15-24.
  78. C. Ní Chléirigh, C. Jungemann, Jongwan Jung, O.O. Olubuyide and J.L. Hoyt, “Extraction of Band Offsets in Strained Si/Strained SiGe on Relaxed SiGe Dual-channel Enhanced Mobility Structures,” ECS Proceedings PV 2004-7 (Electrochemical Society, Pennington, NJ, 2004), pp. 99-110.
  79. I. Åberg, O.O. Olubuyide, J. Li, R. Hull, and J.L. Hoyt, “Fabrication of Strained Si/Strained SiGe/Strained Si Heterostructures on Insulator by a Bond and Etch-back Technique,” IEEE SOI Conference, Virginia, Oct. 2004, pp. 35- 36.
  80. Jongwan Jung, Shaofeng Yu, Mingoo L. Lee, Judy L. Hoyt, E.A. Fitzgerald, and Dimitri A. Antoniadis, “Mobility Enhancement in Dual-channel p-MOSFETs,” IEEE Trans. Elec. Dev. 51(9), Sept. 2004, pp. 1424-1431.
  81. Jongwan Jung, C.N. Chleirigh, Shaofeng Yu, O.O. Oluyuide, J.L. Hoyt, and D.A. Antoniadis, “Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs,” IEEE Electron Device Letters 25 (8), p. 562, Aug. 2004.
  82. I. Åberg, O.O. Olubuyide, C. Ní Chléirigh, I. Lauer, D.A. Antoniadis, J. Li, R. Hull, and J.L. Hoyt, “Electron and Hole Mobility Enhancements in Sub-10 nm-thick Strained Silicon Directly on Insulator Fabricated by a Bond and Etch-back Technique,” IEEE Symp. on VLSI Technology, Hawaii, June 2004, pp. 52-53. (PDF)
  83. Shaofeng Yu, Jongwan Jung, Judy L. Hoyt, and Dimitri A. Antoniadis, “Strained-Si-Strained-SiGe Dual-Channel Layer Structure as CMOS Substrate for Single Workfunction Metal-Gate Technology,” IEEE Elec. Dev. Lett 25 (6), p. 402, June 2004.
  84. Jongwan Jung, Shaofeng Yu, Oluwamuyiwa Oluwagbemiga Olubuyide, Judy L. Hoyt, and Dimitri Antoniadis, Minjoo L. Lee, and Eugene A. Fitzgerald, “Effect of thermal processing on mobility in Strained Si/strained SiGe on relaxed SiGe virtual substrates,” Appl. Phys. Lett. 84 (17), p. 3319, April 2004.
  85. Zhiyuan Cheng, A.J. Pitera, M.L. Lee, Jongwan Jung, J.L. Hoyt, D.A. Antoniadis, and E.A. Fitzgerald, “Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface,” IEEE Electron Device Letters 25 (3), p. 147, March 2004.
  86. S. Eguchi, C. Ní Chléirigh, O.O. Olubuyide, and J.L. Hoyt, “Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys,” Appl. Phys. Lett. 84 (3), Jan 19, 2004, pp. 368-370.
  87. H.M. Nayfeh, J.L. Hoyt, and D.A. Antoniadis, “Investigation of the Performance Enhancement of Nanoscale Strained Si n-MOSFETs,” IEEE IEDM Tech. Digest, Dec. 2003, pp.475-478.
  88. D. V. Singh, J.L. Hoyt, and J. F. Gibbons, “Abrupt phosphorus profiles in Si: Effects of temperature and substitutional carbon on phosphorus autodoping,” Journal of the Electrochemical Society, Sept. 2003, Vol.150 (9), G553 – G556.
  89. T.S. Drake, C.N. Chleirigh, M.L. Lee, A. J. Pitera, E.A. Fitzgerald, D.A. Antoniadis, D.H. Anjum, J. Li, R. Hull, N. Klymko, and J.L. Hoyt, “Fabrication of Ultra-thin Strained Silicon on Insulator,” Journal of Electronic Materials, Sept. 2003, Vol. 32 (9), pp. # 972-975.
  90. T.S. Drake, C.N. Chleirigh, M.L. Lee, A.J. Pitera, E.A. Fitzgerald, D.A. Antoniadis, D.H. Anjum, J. Li, R. Hull, N. Klymko, and J.L. Hoyt, “Effect of Rapid Thermal Annealing on Strain in Ultra-thin Strained Silicon on Insulator Layers,” Appl. Phys. Lett., Aug. 2003, Vol 80 (5), p. 875.
  91. G. Xia, H. M. Nayfeh, M.-J. Lee, E.A. Fitzgerald, D.A. Antoniadis, J. Li, D.H. Anjum, R. Hull, and J.L. Hoyt, “Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in Strained Si n-MOSFETs,” presented at the 45th Electronic Materials Conference (EMC), Salt Lake City, Utah, June 25, 2003.
  92. Zhiyuan Cheng, Jongwan Jung, Arthur J. Pitera, Minjoo. L. Lee, Hasan Nayfeh, Judy L. Hoyt, Dimitri A. Antoniadis, and Eugene. A. Fitzgerald, “Partially- and Fully-Depleted Strained Si/Si1-yGey MOSFETs Fabricated on Relaxed Si1-xGex-On-Insulator (SGOI),” presented at the 45th Electronic Materials Conference (EMC), Salt Lake City, Utah, June 25, 2003.
  93. H. M. Nayfeh, C. W. Leitz, A. J. Pitera, E.A. Fitzgerald, J. L. Hoyt, and D. A. Antoniadis, “Influence of High Channel Doping on the Inversion Layer Electron Mobility in Strained Silicon n-MOSFETs,” IEEE Electron Device Letters, April 2003, Vol. 24 (4), p. 248.
  94. T.S. Drake, M.L. Lee, A.J. Pitera, E.A. Fitzgerald, D.A. Antoniadis, J.L. Hoyt, D.H. Anjum, J. Li, R. Hull, and N. Klymko, “Fabrication of Strained Silicon on Insulator for Ultra-thin Body and Double-gate MOSFETs,” Third International Conference in SiGe(C) Epitaxy and Heterostructures, Santa Fe, New Mexico, presented March 11, 2003.
  95. D.V. Singh, J. L. Hoyt, and J. F. Gibbons, “Effect of band alignment and density of states on the collector current in P-Si/n-Si1-yCy/P-Si heterojunction bipolar transistors,” IEEE Transactions on Electron Devices, Feb. 2003, Vol. 50 (2), p.425.
  96. Eguchi, J.J. Lee, S.J. Rhee, D.L. Kwong, M.L. Lee, E.A. Fitzgerald, I. Aberg, and J.L. Hoyt, “On the mechanism of ion-implanted As diffusion in relaxed SiGe”, 1st Intl. Conf. on SiGe Technology and Device Meeting, Nagoya, Japan, January, 2003, proceedings article published in Applied Surface Science, Vol. 224 (1-4), March 2004, pp. 59-62.
  97. J.L. Hoyt, H.M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E.A. Fitzgerald, D.A. Antoniadis, “Strained Silicon MOSFET Technology”, invited conference presentation and proceedings article in IEEE International Electron Devices Meeting (IEDM) Technical Digest, Dec. 2002, p. 23 – 26.
  98. H.M. Nayfeh, J.L. Hoyt, C.W. Leitz, A.J. Pitera, E.A. Fitzgerald, D.A. Antoniadis, “Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation,” Device Research Conf., Santa Barbara, CA, June 2002.
  99. Eguchi, C. W. Leitz, E. A. Fitzgerald, and J. L. Hoyt, “Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys,” Appl. Phys. Lett., 80 (10), p. 1742 (March, 2002).
  100. Zhiyuan Cheng, G. Taraschi, M. T. Currie, C. W. Leitz, M. L. Lee, A. Pitera, T. Langdo, J. L. Hoyt, D. A. Antoniadis, and E. A. Fitzgerald, “Relaxed Silicon-Germanium on Insulator Substrate by Layer Transfer,” Journal-of-Electronic-Materials 30 (12), L37-39., Dec. 2001.
  101. J.L. Hoyt, invited presentation at Fall 2001 Material Research Society Meeting, “Strained Si/Relaxed Si1-xGex Materials and Devices”, Boston, MA, Nov. 26, 2001.
  102. Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Gianni Taraschi, Minjoo L. Lee, Arthur Pitera, Thomas A. Langdo, Judy L. Hoyt, Dimitri. A. Antoniadis, Eugene A. Fitzgerald, “Silicon-Germanium on Insulator (SGOI)”, in Mat. Res. Soc. Symp. Proc., Fall 2001 meeting, Vol. 686 (Mat. Res. Soc., Pitts., PA, 2002 ), p. 21 – 26.
  103. Eguchi, C. W. Leitz, E. A. Fitzgerald, and J. L. Hoyt, “Diffusion Behavior of Ion Implanted n-type Dopants in Silicon Germanium”, in Mat. Res. Soc. Symp. Proc., Fall 2001 meeting, Vol. 686 (Mat. Res. Soc., Pitts., PA, 2002), p. 33 – 38.
  104. Zhiyuan Cheng, M.T. Currie, C.W. Leitz, G. Taraschi, A. Pitera, J.L. Lee, T. Langdo, J.L. Hoyt, D.A. Antoniadis, E.A. Fitzgerald, “SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation”, proceedings of 2001 IEEE International SOI Conference, Oct. 2001, p. 13 – 14.
  105. Zhiyuan Cheng, Matthew T. Currie, Chris W. Leitz, Gianni Taraschi, Eugene A. Fitzgerald, Judy L. Hoyt and Dimitri A. Antoniadis, “Electron Mobility Enhancement in Strained-Si n-MOSFET’s Fabricated on SiGe-on-Insulator (SGOI) Substrates,” IEEE Electron Device Letters, July 2001, Vol. 22 (7), p. 321.
  106. Eguchi, C. W. Leitz, E. A. Fitzgerald, and J. L. Hoyt, “Diffusion of Implanted N-type Dopants in Silicon Germanium Alloys”, presented at the Electronic Materials Conference, Santa Barbara, CA, June 28, 2001.
  107. D. V. Singh, J. L. Hoyt, and J. F. Gibbons, “Novel Epitaxial p-Si/n-Si1-yCy/p-Si Heterojunction Bipolar Transistors”, IEEE IEDM Tech. Digest, Dec. 2000, p. 749.
  108. B.J. Greene, J. Valentino, J.L. Hoyt, and J.F. Gibbons, “Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium,” in Mat. Res. Society Symp. Proceedings, Spring 2000 Meeting, Vol. 609, edt. R.W. Collins, H.M. Branz, S. Guha, H. Okamoto, M. Stutzmann.
  109. K. Rim, J.L. Hoyt, and J.F. Gibbons, “Enhanced performance in surface-channel strained-Si n- and p-MOSFETs,” Proceedings of the 26th International Conference on Compound Semiconductors, IOP Publishing, Bristol, UK, 2000, p. 281.
  110. D.V. Singh, T.O. Mitchell, J.L. Hoyt, J.F. Gibbons, N.M. Johnson and W.K. Gotz, “Effect of grown-in deep level defects in Si1-yCy/Si epitaxial heterostructures,” Physica B, Vol. 273-274, pp. 681-684, Dec. 15, 1999.
  111. J.L. Hoyt, K. Rim, and J.F. Gibbons, “Performance Enhancements in Strained Si/Relaxed SiGe MOSFETs,” Proceedings International Joint Conf. on Si Epitaxy and Heterostructures, Zao, Japan, Sept. 1999.
  112. D.V. Singh, K. Rim, T.O. Mitchell, J.L. Hoyt and J.F. Gibbons, “Measurement of the Conduction Band Offsets in Si/SiGeC and Si/Si1-yCy Heterostructures using Metal-Oxide-Semiconductor Capacitors,” J. Appl. Phys. 85 (2), pp. 978-984, Jan. 1999.
  113. D.V. Singh, K. Rim, T.O. Mitchell, J.L. Hoyt and J.F. Gibbons, “Admittance Spectroscopy Analysis of the Conduction Band Offsets in Si/SiGeC and Si/Si1-yCy Heterostructures,” J. Appl. Phys. 85 (2), pp. 985-993, Jan. 1999.
  114. K. Rim, J.L. Hoyt, and J.F. Gibbons, “Transconductance Enhancement in Deep Submicron Strained-Si n-MOSFETs,” in IEEE IEDM Tech. Dig., pp. 707-710, Dec. 1998.
  115. K. Rim, J.L. Hoyt, and J.F. Gibbons, “Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs,” in Ext. Abs. of the 1998 International Conf. on Solid State Devices and Materials (SSDM), Hiroshima, Japan, Sept., 1998, pp. 92-93.
  116. J.L. Hoyt, “Strain Engineering of Silicon-based Heterostructures: Materials and Devices,” in Ext. Abs. of the 1998 International Conf. on Solid State Devices and Materials (SSDM), Hiroshima, Japan, Sept., 1998, pp. 78-79.
  117. K. Rim, T.O. Mitchell, D.V. Singh, J.L. Hoyt, J.F. Gibbons, and G. Fountain, “Metal-oxide-semiconductor Capacitance-Voltage Characteristics and Band Offsets for Si1-yCy/Si Heterostructures,” Appl. Phys. Lett. 72 (18), pp. 2286 – 2288 (1998).
  118. J.L. Hoyt, T.O. Mitchell, K. Rim, D. Singh, and J.F. Gibbons, “Epitaxial Growth and Electronic Characterization of Carbon-Containing Silicon-based Heterostructures,” invited paper presented at the Spring, 1998 MRS Meeting, San Francisco, CA, April 13-17, in Mat. Res. Soc. Symp. Proc. Vol. 533, (Mat. Res. Soc., Pittsburgh, PA, 1998), pp. 263-274.
  119. K. Rim, T.O. Mitchell, J.L. Hoyt, G. Fountain, and J.F. Gibbons, “Characteristics of Surface-channel Strained Si1-yCy n-MOSFETs,” {Conference presentation, presented at the Materials Research Society Spring Meeting, San Francisco, CA, April, 1998, in Mat. Res. Soc. Symp. Proc. Vol. 533, (Mat. Res. Soc., Pittsburgh, PA, 1998), pp. 43-48.
  120. Takagi, J.L. Hoyt, K. Rim, J. Welser, and J.F. Gibbons, “Evaluation of the Valence Band Discontinuity of Si/Si1-xGex/Si Heterostructures by Application of Admittance Spectroscopy to MOS Capacitors,” IEEE Trans. Elec. Dev., 45 (2), pp. 493-501 (1998).
  121. T.O. Mitchell, J.L. Hoyt, and J.F. Gibbons, “Substitutional Incorporation of Carbon in Epitaxial Si1-yCy Layers Grown by Chemical Vapor Deposition,” Appl. Phys. Lett. 71 (12), pp. 1688 – 1690 (1997).
  122. J.L. Hoyt, T.O. Mitchell, K. Rim, D.V. Singh, and J.F. Gibbons, “Chemical Vapor Deposition of Column IV Heterostructures: Growth and Device Applications,” in Chemical Vapor Deposition, Proc. XIV Intl. Conf. and EUROCVD-11, edt. M.A. Allendorf and C. Bernard, (Electrochem. Soc., Pennington, NJ, 1997), pp. 1254-1265.
  123. J.L. Hoyt, T.O. Mitchell, K. Rim, D.V. Singh, and J.F. Gibbons, “Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy Heterojunctions Grown by Rapid Thermal Chemical Vapor Deposition,” presented at the Seventh Intl. Symposium on Si Molecular Beam Epitaxy, July 1997, Banff, Canada (article published in Thin Solid Films, Vol. 321, pp. 41-46, Elsevier Science,1998).
  124. K. Rim, T.O. Mitchell, J.L. Hoyt, and J.F. Gibbons, “Band Offset Measurements in Si/Si1-yCy Heterostructures by MOS C-V Characteristics,” presented at the 39th Electronic Materials Conf., Ft. Collins, CO, June, 1997.
  125. T.O. Mitchell, J.L. Hoyt, and J.F. Gibbons, “Substitutional Incorporation of Carbon in CVD-Grown Si1-yCy Epitaxial Layers,” presented at the 39th Electronic Materials Conf., Ft. Collins, CO, June, 1997.
  126. H. Fukuda, J.L. Hoyt, M.A. McCord and R.F.W. Pease, “Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures”, Appl. Phys. Lett. 70 (3), pp. 333-335 (1997).
  127. Takagi, J.L. Hoyt, J. Welser, and J.F. Gibbons, “Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors,” J. Appl. Phys. 80, pp. 1567 – 1577, (1996).
  128. S.C.H. Hung, J.L. Hoyt, and J.F. Gibbons, “Growth and Analysis of Polycrystalline Carbon for MOS Applications,” in Mat. Res. Soc. Proc. Vol. 427, edt. K.N. Tu, J.W. Mayer, J.M. Poate, and L.J. Chen, (Mat. Res. Soc., Pittsburgh, PA, 1996), pp. 317-322.
  129. K. Rim, J. Welser, S. Takagi, J.L. Hoyt, and J.F. Gibbons, “Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs,” in IEEE IEDM Tech. Dig., p. 517-520, Dec. 1995.
  130. T. Ghani, J. Hoyt, A. McCarthy, and J.F. Gibbons, “Control of Implant-Damage-Enhanced Boron Diffusion in Epitaxially Grown n-Si/p-Si1-xGex/n-Si Heterojunctions,” Journ. Elec. Mat. 24 (8), pp. 999-1002 (1995).
  131. J.L. Hoyt, “Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges,” invited paper presented at the Spring, 1995 MRS Meeting, San Francisco, CA, April 17-21, in Mat. Res. Soc. Symp. Proc. Vol. 387, (Mat. Res. Soc., Pittsburgh, PA, 1995), pp. 299-310.
  132. P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner and D. Lefforge, “Boron Diffusion in Si and Si1-xGex,” in Mat. Res. Soc. Proc. Vol. 379 (Mat. Res. Soc., Pittsburgh, PA, 1995), pp. 373-378.
  133. K. Rim, S. Takagi, J.J. Welser, J.L. Hoyt and J.F. Gibbons, “Capacitance-Voltage Characteristics of p-Si/Si1-x-yGexCy MOS Capacitors,” in Mat. Res. Soc. Proc. Vol. 379 (Mat. Res. Soc., Pittsburgh, PA, 1995), pp. 327-332.
  134. J.L. Hoyt, “Electronic Device Applications of Silicon-Germanium Alloys,” invited Short Course Tutorial presented in conjunction with the 1995 American Physical Society Meeting, San Jose, CA, March 19, 1995.
  135. P. Kuo, J.L. Hoyt and J.F. Gibbons, “Effects of Si thermal oxidation on B diffusion in Si and Strained Si1-xGex layers,” Appl. Phys. Lett. 67 (5), pp. 706-708 (1995).
  136. P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner and D. Lefforge, “Effects of strain on boron diffusion in Si and Si1-xGex,” Appl. Phys. Lett. 66 (5), pp. 580-582 (1995).
  137. J. Welser, J.L. Hoyt, S. Takagi, and J.F. Gibbons, “Strain Dependence of the Performance Enhancement in Strained-Si n-MOSFETs,” in IEEE IEDM Tech. Dig., pp. 373-376, Dec. 1994.
  138. R.M. Emerson, J.L. Hoyt and J.F. Gibbons, “Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using
    66. diisopropytelluride and dimethylcadmium,” Appl. Phys. Lett. 65, pp.1103-1105 (1994).
  139. T. Ghani, J.L. Hoyt, M.E. Weybright, and J.F. Gibbons, “Minority Carrier Transport Parameters in n-Si/p+ Si1-xGex/n-Si HBTs using A.C. and D.C. Measurements,” presented at the 52nd Device Research Conf., June, 1994, Boulder, CO.
  140. M.J. Angell, R.M. Emerson, J.L. Hoyt, J.F. Gibbons, L.A. Eyres, M.L. Bortz, and M.M. Fejer, “Growth of alternating (100)/(111)-oriented II-VI regions for quasi-phasematched nonlinear optical devices on GaAs substrates,” Appl. Phys. Lett. 64 (23), pp. 3107-3109, (1994).
  141. J.L. Hoyt, “Electronic Device Applications of Silicon-Germanium Alloys,” Invited Paper presented at the 1994 American Physical Society Meeting, Pittsburgh, March 21, 1994.
  142. J. Welser, J.L. Hoyt, and J.F. Gibbons, “Growth and Processing of Relaxed Si1-xGex/Strained-Si Structures for MOS Applications,” Jap. Journal of Appl. Phys. 33, Part I, No. 4B, pp. 2419-2322 (1994).
  143. J. Welser, J.L. Hoyt, and J.F. Gibbons, “Electron Mobility Enhancement in Strained-Si N-type Metal-Oxide-Semiconductor Field-Effect Transistors,” IEEE Elec. Dev. Lett. 15 (3), pp. 100-102 (1994).
  144. J. Welser, J.L. Hoyt, and J.F. Gibbons, “Evidence of Real-Space Hot-Electron Transfer in High Mobility, Strained-Si Multilayer MOSFETs,” in IEEE IEDM Tech. Dig., Dec. 1993, pp. 545-548.
  145. J. Welser, J.L. Hoyt, and J.F. Gibbons, “Growth and Processing of Relaxed Si1-xGex/Strained-Si Structures for MOS Applications,” in Ext. Abs. of the 1993 International Conf. on Solid State Devices and Materials, Makurhari, Japan, Aug. 1993, pp. 377-379.
  146. J. Welser, J.L. Hoyt, and J.F. Gibbons, “Temperature and Scaling Behavior of Strained-Si N-MOSFETs,” presented at the 51st Annual Device Research Conf, June 22-23, 1993, Santa Barbara, CA.
  147. P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, R.D. Jacowitz, and T.I. Kamins, “Comparison of Boron Diffusion in Si and Strained Si1-xGex Epitaxial Layers,” Appl. Phys. Lett. 62 (6), pp. 612-614 (1993).
  148. J. Welser, J.L. Hoyt, and J.F. Gibbons, “NMOS and PMOS Transistors Fabricated in Strained Silicon/Relaxed Silicon-Germanium Structures,” in IEEE IEDM Tech. Dig., Dec. 1992, pp. 1000-1003.
  149. G. Raghavan, J.L. Hoyt and J.F. Gibbons, “Polycrystalline Carbon: A Novel Material for Gate Electrodes in MOS Technology,” in Jpn. J. Appl. Phys. 32, Part 1, No. 1B, pp. 380-383 (1993).
  150. T.I. Kamins, K. Nauka, R.D. Jackowitz, J.L. Hoyt, D.B. Noble, and J.F. Gibbons, “Electrical Characteristics of Diodes Fabricated in Selective Si/Si1-xGex Epitaxial Layers,” in Journal of Electronic Materials 21, pp. 817-824 (1992).
  151. T.I. Kamins, K. Nauka, R.D. Jackowitz, J.L. Hoyt, D.B. Noble, and J.F. Gibbons, “Electrical and Structural Properties of Diodes Fabricated in Thick, Selectively Deposited Si/Si1-xGex Epitaxial Layers,” in IEEE Elec. Dev. Lett. 13 (4) pp. 177-179, April, 1992.
  152. K. Nauka, T.I. Kamins, J.E. Turner, C.A. King, J.L. Hoyt, and J.F. Gibbons, “Admittance spectroscopy measurements of band offsets in Si/Si1-xGex/Si heterostructures,” Appl. Phys. Lett 60 (2), pp. 195-197 (1992).
  153. J.L. Hoyt, “Si1-xGex/Si Heterojunction Bipolar Transistors: Some New Process Integration Issues,” invited talk presented at the Semiconductor Research Corp. (SRC) Topical Research Conference on Integration of Novel Processes, April 25-26, 1991, ULCA.
  154. J.L. Hoyt, T. Ghani, D.B. Noble, and J.F. Gibbons, “Epitaxial growth of Si1-xGex/Si for Heterojunction Bipolar Transistors using Rapid Thermal Techniques,” invited talk published in Proc. SPIE 1991 Symp. on Microelectronic Processing Integration, Rapid Thermal and Integrated Processing, edt. by Moslehi, Singh, Kwong, and Katz, (SPIE, Bellingham, WA, 1991).
  155. R. Hull, J.C. Bean, D.B. Noble, J.L. Hoyt and J.F. Gibbons, “The dependence of misfit dislocation velocities upon growth technique and oxygen content in strained Si1-xGex/Si(100) heterostructures,” Appl. Phys. Lett. 59 (13), pp. 1585-1587 (1991).
  156. D.B. Noble, J.L. Hoyt, J.F. Gibbons, W.D. Nix, S. Laderman, J.E. Turner, and M.P. Scott, “The effect of oxygen on the thermal stability of Si1-xGex strained layers,” Appl. Phys. Lett 58, pp. 1536-1538 (1991).
  157. T. Ghani, J.L. Hoyt, D.B. Noble, J.F. Gibbons, J.E. Turner, and T.I. Kamins, “The Extraction of Minority Carrier Lifetime from Current-Voltage Characteristics of Si/Si1-xGex Devices,” in Mat. Res. Soc. Proc. Vol. 220, (Mat. Res. Soc., Pittsburgh, PA, 1991) pp. 385-390.
  158. T. Ghani, J.L. Hoyt, D.B. Noble, J.F. Gibbons, J.E. Turner, and T.I. Kamins, “Effect of Oxygen on Minority Carrier Lifetime and Recombination Currents in Si1-xGex Heterostructure Devices,” Appl. Phys. Lett. 58 (12), pp. 1317-1319 (1991).
  159. J.L. Hoyt, D.B. Noble, T. Ghani, J.F. Gibbons, M.P. Scott, S.S. Laderman, S.J. Rosner, J.E. Turner, and T.I. Kamins, “Growth of Si1-xGex/Si for Heterojunction Bipolar Transistor Applications,” invited paper published in proceedings of the Second International. Conf. on Electronic Materials, 1990, (IEDM-90), Edt. by R.P.H. Chang, T. Sugano, and V.T. Nguyen (Mat. Res. Soc., Pitts. PA, 1991), pp. 551-562.
  160. D.B. Noble, J.L. Hoyt, C.A. King, J.F. Gibbons, T.I. Kamins, and M.P. Scott, “Reduction in misfit dislocation density by the selective growth of Si1-xGex/Si in small areas,” Appl. Phys. Lett. 56 (1), pp. 51-53, (1990).
  161. D.B. Noble, J.L. Hoyt, J.F. Gibbons, M.P Scott, S.S. Laderman, S.J. Rosner and T.I. Kamins, “Thermal stability of Si/Si1-xGex heterojunction bipolar transistor structures grown by limited reaction processing,” Appl. Phys. Lett. 55 (18), pp. 1978-1980 (1989).
  162. T.I. Kamins, K. Nauka, J.B. Kruger, L. Camnitz, J.L. Hoyt, C.A. King, D.B. Noble, and J.F. Gibbons, “High-Frequency Si/Si1-xGex Heterojunction Bipolar Transistors,” in IEEE IEDM Tech. Dig., Dec. 1989, pp. 647-649.
  163. T.I. Kamins, K. Nauka, J.B. Kruger, J.L. Hoyt, C.A. King, D.B. Noble, C.M. Gronet, and J.F. Gibbons, “Small-Geometry, High-Performance Si-Si1-xGex Heterojunction Bipolar Transistors,” IEEE Elec. Dev. Lett. 10 (11), pp. 503-505 (1989).
  164. C.A. King, J.L. Hoyt, and J.F. Gibbons, “Bandgap and transport properties of Si1-xGex by analysis of nearly ideal Si/Si1-xGex Heterojunction Bipolar Transistors,” in IEEE Trans. Elec. Dev., 36 (10), pp. 2093-2104 (1989).
  165. J.L. Hoyt, C.A. King, D.B. Noble, C.M. Gronet, J.F. Gibbons, M.P. Scott, S.S. Laderman, S.J. Rosner, K. Nauka, J. Turner, and T.I. Kamins, “Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications,” invited paper presented at the 1989 European MRS Meeting, Strasbourg, France. Published in Thin Solid Films, 184, pp. 93-106 (1990).
  166. C.A. King, J.L. Hoyt, D.B. Noble, C.M. Gronet, J.F. Gibbons, M.P. Scott, S.S. Laderman, T.I. Kamins and J. Turner, “Epitaxial Growth of Si1-xGex/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications,” in Mat. Res. Soc. Symp. Proc. 146, (Mat. Res. Soc., Pittsburgh, PA, 1989), pp. 71-82.
  167. C.A. King, J.L. Hoyt, D.B. Noble, C.M. Gronet, J.F. Gibbons, M.P. Scott, T.I. Kamins, and S.S. Laderman, “Electrical and material quality of p-N Si/ Si1-xGex heterojunctions produced by limited reaction processing,” IEEE Electron Dev. Lett. 10 (4), pp. 159-161 (1989).
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  169. J.L. Hoyt, E.F. Crabbé, R.F.W. Pease, and J.F. Gibbons, “Lateral uniformity of n+/p junctions formed by arsenic diffusion from epitaixally aligned polycrystalline silicon on silicon,” J. Electrochem. Soc. 135 (7), pp. 1773-1779 (1988).
  170. J.L. Hoyt, E.F. Crabbé, R.F.W. Pease, and J.F. Gibbons, “Etching technique for characterization of epitaxial alignment of arsenic implanted polycrystalline silicon films on (100) silicon,” J. Electrochem. Soc. 135 (7), pp. 1839-1842 (1988).
  171. J.L. Hoyt, E.F. Crabbé, J.F. Gibbons, and R.F.W. Pease, “Epitaxial alignment of As implanted polysilicon emitters,” in Mat. Res. Soc. Symp. Proc. Vol. 92, Edt. S.R. Wilson, R. Powell, and D.E. Davies (Mat. Res. Soc., Pittsburgh, PA, 1987), p. 47-52.
  172. E. Crabbé, J.L. Hoyt, M.M. Moslehi, R.F.W. Pease, and J.F. Gibbons, “Novel emitter contacts for VLSI bipolar transistors,” in Proc. of Third Intl. Symp. on VLSI Technology and Applications, Taiwan, May, 1987.
  173. E. Crabbé, J.L. Hoyt, M.M. Moslehi, R.F.W. Pease, and J.F. Gibbons, “Reduced process sensitivity of polysilicon emitter contacts for VLSI bipolar transistors,” in Tech. Dig.: 1987 Symp. on VLSI Technology, Karuizawa, Japan, May, 1987.
  174. J.L. Hoyt, E. Crabbé, J.F. Gibbons, and R.F.W. Pease, “Epitaxial alignment of arsenic implanted polycrystalline silicon films on (100) silicon obtained by rapid thermal annealing,” Appl. Phys. Lett. 50 (12), pp. 751-753, (1987).
  175. M.D. Giles, J.L. Hoyt, and J.F. Gibbons, “The depth resolution of dynamic SIMS: experiments and calculations,” in Mat. Res. Soc. Symp. Proc. Vol. 69, Edt. N.W. Cheung and M.A. Nicolet, (Mat. Res. Soc., Pittsburgh, PA 1986), pp. 323-328.
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