Dr. Judy L. Hoyt pioneered the development of strained Si MOSFET technology in the 1990s.  Her present research interests are in the areas of semiconductor devices, particularly silicon-germanium heterostructure devices and technology, epitaxial growth, nanostructures, solar cells, Ge-on-Si photodetectors and CMOS front-end processing.  She has authored or co-authored over 160 publications in these areas, and holds 6 patents.  Prof. Hoyt served as General Chair of the IEEE International Electron Devices Meeting (2001), is a Fellow of the IEEE, and a member of the Electron Devices Society and the American Physical Society. She received the IEEE Paul Rappaport Award in 1989, the IEEE George Smith Award in 2005, and the IEEE Andrew S. Grove Award in 2011.