The spintronic material and device group focuses on understanding the generation, transportation and detection of electron spins  in solid state materials, as well as the dynamics of ensemble of electron spins, i.e., nanoscale ferromagnets. We look into the spin-related physics in nanoscale structures. We develop new materials, fabricate novel devices for future computation and communication applications.

One topic that we have been looking into is the spin orbit interaction induced phenomena in solid state materials. Electron spin orbit interaction in solids give rise to various interesting physics phenomena such as spin Hall effect, spin momentum correlated surface states in topological insulator, the coupling of spin and valley in 2 dimensional semiconductors and non-zero spin momentum in polar superconductors, etc. We carry out electrical transport measurement to verify and quantify these effects, as well as study the influence of these effects onto the dynamics of nanomagnets.

Spin Hall effect induced spin accumulation in heavy metals

The stack structure which is used to quantify the spin polarization of topological insulator surface states

One important goal of our research lies in utilizing the effects mentioned above to make low power, high speed electronic devices. As one of the beyond-CMOS technologies, spintronics have the advantage of non-volatility, high efficiency and good scalability. We work on optimizing the writing and reading mechanisms of spintronic devices, with the goal of making better magnetic memory and spin-based logic devices, which can implement and replace some of the existing electronic devices.

 

spin Hall effect induced magnetic dynamics in nanoscale ferromagnets

A three terminal magnetic device which uses spin Hall effect to switch the orientation of magnetic moment and uses magnetic tunnel junction to read the bit.