Tomás Palacios' Group @ MIT

Advanced Semiconductor Materials and Devices

IWN 2014 – Wroclaw, Poland “Outstanding Poster Presentation”

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Sameer Joglekar, PhD candidate since 2011 with Prof. Tomas Palacios received the Best Poster Award at the International Workshop on Nitride Semiconductors (IWN) held in Poland the week of Aug. 24.  The work which Joglekar presented, titled “Impact of AI2O3 Passivation on the Surface Properties and Schottky Barrier Height of AlGaN/GaN Transistors” was selected from more than 500 presentations at the IWN, the top conference in the field. Inaugurated in 2000, the International Workshop on Nitride Semiconductors is held biennially alternating with the International Conference on Nitride Semiconductors (ICNS), which covers related subject areas.

Mr. Sameer Joglekar, received his Bachelors degree in Materials Science from the Indian Institute of Technology at Mumbai in India, in August 2011. He joined Prof. Palacios’ Advanced Semiconductor Materials and Devices Group as a Ph.D candidate in November 2011. His work focuses on surface plasma treatments and effects of stress on the piezoelectric properties of AlGaN-GaN material systems.