Tomás Palacios' Group @ MIT

Advanced Semiconductor Materials and Devices

Brief Bio & CV

Tomas Palacios

Tomas´ resume (PDF)

Tomas´ resume (Word)

Tomás Palacios is the Emmanuel E. Landsman Career Development Associate Professor of Electrical Engineering and Computer Science at the   Massachusetts Institute of Technology (MIT). He is affiliated with the Department of Electrical Engineering and Computer Science and with the Microsystems Technology Laboratory. He studied Telecommunication Engineer in the Polytechnic University of Madrid, and he received his MS and PhD degrees in Electrical Engineering from the University of California – Santa Barbara in 2004 and 2006, respectively.

In 1997, Tomás joined the Institute for Systems based on Optoelectronics and Microtechnology (ISOM) in Spain.There, he did research on semiconductor fabrication technology, ultraviolet photodetectors, surface acoustic wave filters and high electron mobility transistors. In the summer of 2000, he worked in the Microelectronics Group of the European Organization for Nuclear Research (CERN, Geneva) where he collaborated in the design of new Si transistors for radiation-hard and low noise electronics. In 2002, he joined Prof. Mishra´s group at UCSB where he developed new transistors based on nitrides semiconductors for mm-wave applications and he established the state-of-the-art in high frequency and high power applications.

Tomás research interests include the design, processing and characterization of new electronic devices based on wide bandgap semiconductors for power amplification and digital applications beyond 100 GHz. He is also very interested in the development of new concepts for biosensors and bioactuators as well as in the use of the unique properties of nitrides semiconductors for power generation and conversion. His group is also focused on developing new applications and devices for graphene, a one-atom-thick new electronic material with amazing properties. When not at MIT, Tomás enjoys reading, listening to classical music, hiking and attending plays and concerts.

His work has been recognized with multiple awards, including the Young Scientist Award of the International Symposium on Compound Semiconductors (ISCS), the Young Researcher Award at the 6th International Conference on Nitride Semiconductors, the Best Student Paper Award at the 36th Device Research Conference, the Lancaster Dissertation award, the European Prize Salva i Campillo to the “most promising European Newcomer to Engineering”, etc. He is also author or coauthor of more than 200 scientific papers in international journals and conferences, three book chapter and multiple invited talks and patents.

Recently Tomás has been awarded the Presidential Early Career Award for Scientists and Engineers (PECASE) (October 2011), the DARPA Young Faculty Award (March 2008), the Office of Naval Research’ Young Investigator Award (March 2009) and the National Science Foundation (NSF) CAREER Award (July 2009).