2012

• Tomás Palacios

  • Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; transistors based on nanowires two dimensional materials.

• Graphene-based CMOS Infrared Imaging System

  • The CMOS image sensor is widely used in digital multimedia applications. Its performance ramps up every year with denser integration,…

• Use of in-situ SiN_x to Reduce the OFF-state Degradation of AlGaN/GaN HEMTs

  • Thanks to their excellent electrical performance, AlGaN/GaN high electron mobility transistors (HEMTs) are considered ideal devices for the next generation…

• Impact of Metal-induced Strain in InAlN/GaN Nanoribbons

  • Nitride transistors with current gain cut-off frequencies (fT) of 300 GHz and power gain cut-off frequencies (fmax) of 394 GHz…

• Graphene Infrared Photodetectors

  • Graphene is a two-dimensional (2D) material that has attracted great interest for electronic devices since its discovery in 2004 [1]…

• Wafer-level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs

  • Nitride-based semiconductors have received considerable attention during the last decade due to their outstanding properties for opto-electronic, high frequency, and…

• Graphene Chemical Sensors on Flexible Substrates

  • With its all-surface 2D structure combined with very high carrier mobility, graphene is an extremely promising candidate for high sensitivity…

• Doping of Graphene Devices through Chlorination

  • Graphene, a two-dimensional honeycomb lattice of sp2-hybridized carbon atoms, has attracted tremendous interest in the scientific community. Surface functionalization is…

• Reliability Studies of AlGaN/GaN HEMTs

  • There is an increasing interest in AlGaN/GaN high electron mobility transistors (HEMTs) due to their great potential for high performance…

• GaN-Based Transistors for Power Electronic Applications

  • Wide band-gap III-nitride semiconductors have great potential for the next generation of power electronics. GaN high-electron-mobility transistors (HEMTs) in particular…

• 2D Crystals for Ubiquitous Electronics

  • Two-dimensional crystals, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMD) materials, have outstanding properties for developing the next…

• 300-GHz GaN Transistors

  • The unique combination of high electron velocity and high breakdown voltage of GaN makes this material an ideal candidate for…

• Technology Development for GaN and Si Integration

  • GaN is an excellent material to be used in high-power, high-frequency and high-temperature applications due to its wide band gap,…

• Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil using Chemical Vapor Deposition

  • Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly as a protective coating, dielectric layer/substrate, transparent membrane, or…

• Stress State Characterization of InAlN/GaN Nanoribbon HEMT Structures using Convergent Beam Electron Diffraction

  • GaN-based high electron mobility transistors (HEMTs) are an important platform for the realization of high-power, high-frequency devices.  Nanoribbon (NR) HEMT…

• MIT-MTL Center for Graphene Devices and Systems

  • The MIT/MTL Center for Graphene Devices and Systems (MIT-CG) brings together, MIT researchers and industrial partners to advance the science…