Tomás Palacios' Group @ MIT

Advanced Semiconductor Materials and Devices

Group Publications

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Review Papers and Presentations

  • 2017, Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack, Amirhasan Nourbakhsh, Ahmad Zubair, Sameer Joglekar, Mildred Dresselhaus, Tomás Palacios
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  • 2017, Hot electron transistor with van der Waals base-collector heterojunction and high performance GaN emitter, Ahmad Zubair, Amirhasan Nourbakhsh, Jin-Yong Hong, Meng Qi, Yi Song, Debdeep Jena, Jing Kong, Mildred S. Dresselhaus, Tomas Palacios
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  • 2016, A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas, H. Hou, Z. Liu, J. Teng, T. Palacios and S. J. Chua
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  • 2016, MoS2 Field-Effect Transistor with Sub-10 nm Channel Length, Amirhasan Nourbakhsh, Ahmad Zubair, Redwan N Sajjad, Amir Tavakkoli KG, Wei Chen, Shiang Fang, Xi Ling, Jing Kong, Mildred S Dresselhaus, Efthimios Kaxiras, Karl K Berggren, Dimitri Antoniadis, Tomás Palacios
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  • 2016, Transport Properties of a MoS2/WSe2 Heterojunction Transistor and its Potential for Application, A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios
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  • 2015, Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2, L. Zhou, K. Xu, A. Zubair, A.D. Liao, W. Fang, F. Ouyang, Y.H. Lee, K. Ueno, R. Saito, T. Palacios, J. Kong, M.S. Dresselhaus
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  • 2015, Use of Terahertz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas, Cabellos-Aparicio, A. Nanonetworking Center in Catalonia, BarcelonaTech, Barcelona, Spain, I. Llatser, , E. Alarcon, A. Hsu, T. Palacios
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  • 2015, Graphene-Based Thermopile for Thermal Imaging Applications, Hsu, A., P.K. Herring, N.M. Gabor, S. Ha, Y.C. Shin, Y. Song, M. Chin, M. Dubey, A. Chandrakasan, J. Kong, P.J. Herrero, T. Palacios
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  • 2015, High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits, Yu, L., A. Zubair, E.J. G. Santos, X. Zhang, Y. Lin, Y. Zhang, T. Palacios
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  • 2015, X-Ray Spectroscopic Investigation of Chlorinated Graphene: Surface Structure and Electronic Effects, Zhang, X., T. Schiros, D. Nordlund, Y.C. Shin, J.Kong, M. Dresselhaus, T. Palacios
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  • 2015, Role of Interfacial Oxide in High-Efficiency Graphene–Silicon Schottky Barrier Solar Cells, Song, Y, X. Li, C. Mackin, X. Zhang, W. Fang, T. Palacios, H. Zhu, J. Kong
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  • 2015, A new process approach for slant field plates in GaN-based high-electron-mobility transistors, Suemitsu, T., K. Kobayashi, S. Hatakeyama, N. Yasukawa, T.Yoshida, T. Otsuji, D. Piedra, T. Palacios
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  • 2015, Synthesis of large-area multilayer hexagonal boron nitride for high material performance, Kim, S.M., A Hsu, M.H. Park, S.H. Chae,S.J. Yun,J.S. Lee, D.H. Cho, W.Fang, C. Lee, T. Palacios, M. Dresselhaus, K.K. Kim, Y.H. Lee, J. Kong
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  • 2015, Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes, Zhang, Y., M. Sun, H.Y. Wong, Y. Lin, P. Srivastava, C. Hatem, M. Azize, D. Piedra, L. Yu, T. Sumitomo, N.A. de Braga, R.V. Mickevicius, R.V. ; Palacios, T.
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  • 2015, Flexible Graphene Electrode-Based Organic Photovoltaics with Record-High Efficiency, Parka, H., S. Changb, X. Zhoub, J. Kongb, T. Palacios, S. Gradecak
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  • 2015, Application of tungsten as a carbon sink for synthesis of large-domain uniform monolayer graphene free of bilayers/multilayers, Fang, W., A. Hsu, Y.C. Shin, A. Liao, S. Huang, Y. Song, M. Dresselhaus, T. Palacios, J. Kong
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  • 2015, Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxide, Nourbakhsh, A. , C. Adelmann, Y. Song, C. S. Lee, I. Asselberghs, C. Huyghebaert, S. Brizzi, M.Tallarida, D.Schmeißer, S.V.Elshocht , M. Heyns, J.Kong, T.Palacios and S. De Gendt
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  • 2015, Room-Temperature ballistic transport in III-nitride heterostructures, Matioli, E., and T. Palacios
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  • 2014, Functionalized MoS2 Nanosheet-Based Field-Effect Biosensor for Label-Free Sensitive Detection of Cancer Marker Proteins in Solution, Wang, L., Y. Wang, J. I. Wong, T. Palacios, J. Kong, and H. Y. Yang
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  • 2014, Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN, Kobayashi, K., S. Hatakeyama, T. Yoshida, Y. Yabe, D. Piedra, T. Palacios, T. Otsuji, and T. Suemitsu
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  • 2014, Real-time, sensitive electrical detection of Cryptosporidium parvum oocysts based on chemical vapor deposition-grown graphene, Wong, J. I., L. Wang, Y. Shi, T. Palacios, J. Kong, X. Dong, and H. Y. Yang
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  • 2014, Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam, Uedono, A., T. Fujishima, Y. Cao, Y. Zhang, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios
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  • 2014, Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam, Uedono, A., T. Fujishima, D. Piedra, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios
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  • 2014, On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors, Gao, F., D. Chen, H. L. Tuller, C. V. Thompson, and T. Palacios
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  • 2014, An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors, Rakheja, S., Y. Wu, H. Wang, T. Palacios, P. Avouris, and D. A. Antoniadis
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  • 2014, Dielectric Screening of Excitons and Trions in Single-Layer MoS2, Lin, Y., X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios
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  • 2014, Photoresponse of an Electrically Tunable Ambipolar Graphene Infrared Thermocouple, Herring, P. K., A. L. Hsu, N. M. Gabor, Y. C. Shin, J. Kong, T. Palacios, and P. Jarillo-Herrero
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  • 2014, Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics, Yu, L., Y.-H. Lee, X. Ling, E. J. G. Santos, Y. C. Shin, Y. Lin, M. Dubey, E. Kaxiras, J. Kong, H. Wang, and T. Palacios
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  • 2014, Flexible Graphene Electrode-Based Organic Photovoltaics with Record-High Efficiency, Park, H., S. Chang, X. Zhou, J. Kong, T. Palacios, and S. Gradecak
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  • 2014, Correlation of on-wafer 400 V dynamic behavior and trap characteristics of GaN-HEMTs, Imada, T., D. Piedra, T. Kikkawa, and T. Palacios
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  • 2014, GaN-on-Si Vertical Schottky and p-n Diodes, Zhang, Y., M. Sun, D. Piedra, M. Azize, X. Zhang, T. Fujishima, and T. Palacios
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  • 2014, Two-dimensional materials for electronic applications, Lemme, M. C., L.-J. Li, T. Palacios, and F. Schwierz
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  • 2014, GaN high electron mobility transistors for sub-millimeter wave applications, Lee, D. S., Z. Liu, and T. Palacios
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  • 2014, Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs, Gao, F., S. C. Tan, J. A. del Alamo, C. V. Thompson, and T. Palacios
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  • 2014, Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs, Gao, F., S. C. Tan, J. A. del Alamo, C. V. Thompson, and T. Palacios
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  • 2014, Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates, Araki, T., S. Uchimura, J. Sakaguchi, Y. Nanishi, T. Fujishima, A. Hsu, K. K. Kim, T. Palacios, A. Pesquera, A. Centeno, and A. Zurutuza
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  • 2014, Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates, Kobayashi, K., S. Hatakeyama, T. Yoshida, Y. Yabe, D. Piedra, T. Palacios, T. Otsuji, and T. Suemitsu
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  • 2014, Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition, Fang, W., A. L. Hsu, Y. Song, A. G. Birdwell, M. Amani, M. Dubey, M. S. Dresselhaus, T. Palacios, and J. Kong
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  • 2014, Surface-Induced Hybridization between Graphene and Titanium, Hsu, A. L., R. J. Koch, M. T. Ong, W. Fang, M. Hofmann, K. K. Kim, T. Seyller, M. S. Dresselhaus, E. J. Reed, J. Kong, and T. Palacios
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  • 2014, Electronics based on two-dimensional materials, Fiori, G., F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee, and L. Colombo
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  • 2013, 317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance, Lee, D. S., O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, D. Kopp, P. Fay, and T. Palacios
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  • 2013, Emerging Graphene-Based Electronic & Photonic Devices, Circuits, and Systems, Towe, E., T. Palacios, and M. Suemitsu
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  • 2013, Large-Area 2D Electronics: Materials, Technology, and Devices, Hsu, A., H. Wang, Y. C. Shin, B. Mailly, X. Zhang, L .Yu, Y. Shi, Y. H. Lee, M. Dubey, K. K. Kim, J. Kong, and T. Palacios
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  • 2013, Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method, Sun, X., O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma
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  • 2013, Towards rapid nanoscale measurement of strain in III-nitride heterostructures, Jones, E., D. Cooper, J.-L. Rouviere, A. Beche, M. Azize, T. Palacios, and S. Gradecak
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  • 2013, Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors, Zhang, Y., M. Sun, S. J. Joglekar, T. Fujishima, and T. Palacios
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  • 2013, Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment, Fujishima, T., S. Joglekar, D. Piedra, H.-S. Lee, Y. Zhang, A. Uedono, and T. Palacios
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  • 2013, pH sensing properties of graphene solution-gated field-effect transistors, Mailly-Giacchetti, B., A. Hsu, H. Wang, V. Vinciguerra, F. Pappalardo, L. Occhipinti, E. Guidetti, S. Coffa, J. Kong, and T. Palacios
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  • 2013, Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery, Kim, S. M., A. Hsu, P. T. Araujo, Y.-H. Lee, T. Palacios, M. Dresselhaus, J.-C. Idrobo, K. K. Kim, and J. Kong
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  • 2013, Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces, Lee, Y.-H., L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, C.-S. Chang, M. Dresselhaus, T. Palacios, L.-J. Li, and J. Kong
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  • 2013, Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy, Fang, W., A. L. Hsu, R. Caudillo, Y. Song, A. G. Birdwell, E. Zakar, M. Kalbac, M. Dubey, T. Palacios, M. S. Dresselhaus, P. T. Araujo, and J. Kong
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  • 2013, Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery, Kim, S. M., A. Hsu, P. T. Araujo, Y. H. Lee, T. Palacios, M. Dresselhaus, J. C. Idrobo, K. K. Kim, and J. Kong
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  • 2013, The effect of copper pre-cleaning on graphene synthesis, Kim, S. M., A. Hsu, Y.-H. Lee, M. Dresselhaus, T. Palacios, K. K. Kim, and J. Kong
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  • 2013, A Technology Overview of the PowerChip Development Program, :Araghchini, M.; Jun Chen; Doan-Nguyen, V.; Harburg, D.V.; Donghyun Jin; Jungkwun Kim; Min Soo Kim; Seungbum Lim; Bin Lu; Piedra, D.; Jizheng Qiu; Ranson, J.; Min Sun; Xuehong Yu; Hongseok Yun; Allen, M.G.; del Alamo, J.A.; DesGroseilliers, G.; Herrault, F.; Lang, J.H.; Levey, C.G.; Murray, C.B.; Otten, D.; Palacios, T.; Perreault, D.J.; Sullivan, C.R.
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  • 2013, Device Delay in GaN Transistors Under High Drain Bias Conditions, Lee, D. S., O. Laboutin, Y. Cao, J. W. Johnson, E. Beam, A. Ketterson, M. L. Schuette, P. Saunier, and T. Palacios
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  • 2013, Nanowire Channel InAlN/GaN HEMTs With High Linearity of g(m) and f(T), Lee, D. S., H. Wang, A. Hsu, M. Azize, O. Laboutin, Y. Cao, J. W. Johnson, E. Beam, A. Ketterson, M. L. Schuette, P. Saunier, and T. Palacios
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  • 2013, An Etch-Stop Barrier Structure for GaN High Electron Mobility Transistors, Lu, B., M. Sun, and T. Palacios
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  • 2013, Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors, Gonzalez-Posada, F., M. Azize, X. Gao, S. Guo, E. Monroy, and T. Palacios
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  • 2013, Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy, Sakaguchi, J., T. Araki, T. Fujishima, E. Matioli, T. Palacios, and Y. Nanishi
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  • 2013, AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology, Liu, Z., M. Sun, H.-S. Lee, M. Heuken, and T. Palacios
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  • 2013, Special Issue on GaN Electronic Devices, Ghione, G., K. J. Chen, T. Egawa, G. Meneghesso, T. Palacios, and R. Quay
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  • 2013, Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure, Matioli, E.,B. Lu, and T. Palacios
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  • 2013, Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors, Samsel, I. K., E. X. Zhang, N. C. Hooten, E. D. Funkhouser, W. G. Bennett, R. A. Reed, R. D. Schrimpf, M. W. McCurdy, D. M. Fleetwood, R. A. Weller, G. Vizkelethy, X. Sun, T.-P. Ma, O. I. Saadat, and T. Palacios
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  • 2013, Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs, Sun, X., O. I. Saadat, J. Chen, E. X. Zhang, S. Cui, T. Palacios, D. M. Fleetwood, and T. P. Ma
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  • 2013, Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors, Zhang, Y., M. Sun, Z. Liu, D. Piedra, H.-S. Lee, F. Gao, T. Fujishima, and T. Palacios
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  • 2013, Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators, Shin, S. R., S. M. Jung, M. Zalabany, K. Kim, P. Zorlutuna, S. B. Kim, M. Nikkhah, M. Khabiry, M. Azize, J. Kong, K. Wan, T. Palacios, M. R. Dokmeci, H. Bae, X. Tang, and A. Khademhosseini
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  • 2013, Impact of Chlorine Functionalization on High-Mobility Chemical Vapor Deposition Grown Graphene, Zhang, X., A. Hsu, H. Wang, Y. Song, J. Kong, M. S. Dresselhaus, and T. Palacios
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  • 2012, Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers, Hodges, C.,N. Killal, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, and M. Kuball
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  • 2012, Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors, Jones, E. J., M. Azize, M. J. Smith, T Palacios and S. Gradecak
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  • 2012, Integrated Circuits Based on Bilayer MoS2 Transistors, Wang, H., L. L. Yu, Y. H. Lee, Y. M. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios
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  • 2012, Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition, Kim, K. K., A. Hsu, X. T. Jia, S. M. Kim, Y. S. Shi, M. Hofmann, D. Nezich, J. F. Rodriguez-Nieva, M. Dresselhaus, T. Palacios, and J. Kong
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  • 2012, Graphene Electronics for RF Applications, Wang, H., A. L. Hsu, and T. Palacios
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  • 2012, Monolithic Integration of Silicon CMOS and GaN Transistors in a Current Mirror Circuit, Hoke, W. E., R. V. Chelakara, J. P. Bettencourt, T. E. Kazior, J. R. LaRoche, T. D. Kennedy, J. J. Mosca, A. Torabi, A. J. Kerr, H.-S. Lee, and T. Palacios
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  • 2012, Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs, Gao, F., D. Chen, B. Lu, H. L. Tuller, C. V. Thompson, S. Keller, U. K. Mishra, and T. Palacios
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  • 2012, Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs, Lee, D. S., O. Laboutin, Y. Cao, W. Johnson, E. Beam, A. Ketterson, M. Schuette, P. Saunier, and T. Palacios
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  • 2012, 3000-V 4.3-mΩ · cm2 InAlN/GaN MOSHEMTs With AlGaN Back Barrier, Lee, H. S., D. Piedra, M. Sun, X. Gao, S. P. Guo, T. Palacios
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  • 2012, Delay Analysis of Graphene Field-Effect Transistors, Wang, H., A. Hsu, D. S. Lee, K. K. Kim, J. Kong, and T. Palacios
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  • 2012, Q&A Tomás Palacios Taking Charge, Gwynne, P., and T. Palacios
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  • 2012, Comparative Breakdown Analysis of Mesa and Ion Implantation Isolated AlGaN/GaN HEMTs on Si Substrate, Sun, M.,H.-S. Lee, B. Lu, D. Piedra, and T. Palacios
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  • 2012, Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs, DasGupta, S., M. Sun, A. Armstrong, R. J. Kaplar, M. J. Marinella, J. B. Stanley, S. Atcitty, and T. Palacios
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  • 2012, Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices, Kim, K. K., A. Hsu, X. T. Jia, S. M. Kim, Y. M. Shi, M. Dresselhaus, T. Palacios, and J. Kong
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  • 2012, A comparison of single-wall carbon nanotube electrochemical capacitor electrode fabrication methods, Ervin, M. H., B. S. Miller, B. Hanrahan, B. Mailly, and T. Palacios
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