Self-Aligned InGaAs Quantum-Well MOSFETs
The increasing difficulty of Si to support the historical rate of progress of CMOS scaling known as Moore’s Law has prompted the search for alternative channel materials with enhanced transport characteristics. Among possible candidates, InGaAs has recently emerged as a leading contender for n-channel MOSFETs. This is because of its outstanding electron transport characteristics. Our group is investigating transistor architectures to exploit the unique properties of InGaAs. We have innovated a self-aligned process that is entirely based on Si-compatible materials and processes and that has resulted in the most compact and highest performing scaled InGaAs transistor demonstrations in the literature. Using these devices, we have recently carried out a detailed vertical and lateral scaling study. These very tight transistor designs have revealed for the first time the role of band-to-band tunneling and gate-induced drain leakage (GIDL) in the off-state characteristics of these devices.
RC-236 del Alamo, J. A. , D. A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, “III-V MOSFETs for Future CMOS.” Invited Paper to be presented at IEEE Compound Semiconductor IC Symposium, New Orleans, LA, October 11-14, 2015.
RC-235 Lin, J., D. A. Antoniadis, and J. A. del Alamo, "A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs." at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, Z, May 18-21, 2015. (slides) (paper)
RJ-157 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”Physics and Mitigation of Excess Off-state Current in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 62, No. 5, pp. 1448-1455, May 2015. (paper)
RC-229 Lin, J., D. A. Antoniadis and J. A. del Alamo, "Novel Intrinsic and Extrinsic Engineering for High-Performance High-Density Self-Aligned InGaAs MOSFETs: Precise Channel Thickness Control and Sub-40 nm Metal Contacts." IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 575-578.
RC-228 del Alamo, J. A., "InGaAs MOSFET Electronics." Invited Plenary Talk at 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2014), Jeju Island, Korea, December 7-11, 2014.
Cross section of a self-aligned InGaAs Quantum-Well MOSFET with a gate length of 20 nm. This is one of the smallest III-V MOSFETs ever fabricated (research of Jerome Lim). Learn more here.