Jesús A. del Alamo

MTL

Publications 1984

RJ-12. del Alamo, J. A., and R. M. Swanson, "The Physics and Modeling of Heavily Doped Emitters", IEEE Transactions on Electron Devices ED-31, 1878, December 1984. (paper)

RC-10. del Alamo, J. A., and R. M. Swanson, "Fabrication of Heavily Doped Si by PH3/SiH4 Epitaxy", 9th International Conference on Chemical Vapor Deposition, Cincinnati, OH, May 1984, p. 295.

RC-9. del Alamo, J. A., and R. M. Swanson, "Analytical Modeling of Heavily Doped Emitters for Solar Cells", 17th IEEE Photovoltaic Specialists Conference, Kissimmee, FL, May 1984, p. 1303.

RJ-11. del Alamo, J. A., and R. M. Swanson, "Measurement of Electron Mobility in Epitaxial Heavily Phosphorus Doped Silicon", Journal of Applied Physics 56, 2250, October 1984. Erratum in Journal of Applied Physics 57, 2346, March 1985.

RJ-10. del Alamo, J. A., and R. M. Swanson, "Comments on 'A Method for Determining Bandgap Narrowing in Heavily Doped Semiconductors", IEEE Transactions on Electron Devices ED-31, 123, January 1984. (paper)

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