Jesús A. del Alamo

MTL

Publications 1985

RJ-15. del Alamo, J. A., and R. M. Swanson, "Fabrication and Characterization of Epitaxial Heavily Phosphorus-Doped Silicon", Journal of the Electrochemical Society 132, 3011, December 1985.

RC-14. del Alamo, J. A., S. Swirhun and R. M. Swanson, "Simultaneous Measurement of Hole Lifetime, Hole Mobility, and Bandgap Narrowing in Heavily Doped n-type Silicon", International Electron Device Meeting, Washington, DC, December 1985, p. 290. (paper)

RC-15. del Alamo, J. A., and R. M. Swanson, "Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters", (Invited), U.S. Belgium Joint Seminar on New Developments in the Physics of Homo- and Heterojunctions, Leuven, Belgium, May 1986, in Solid-State Electronics 30, 1127, November 1987.

RC-12. del Alamo, J. A., and R. M. Swanson, "Measurement of Minority Carrier Transport Parameters in Heavily Doped n-type Silicon", 43rd Annual Device Research Conference, Boulder, CO, June, 1985; abstract published in IEEE Transactions on Electron Device ED-32, 2555, November 1985.

RC-13. del Alamo, J. A., and R. M. Swanson, "Measurement of Heavy Doping Parameters in n-type Silicon", 18th IEEE Photovoltaic Specialists Conference, Las Vegas, NV, October 1985, p. 584.

RJ-14. del Alamo, J. A., and R. M. Swanson, "Measurement of Hall Scattering Factor in Phosphorus-Doped Silicon", Journal of Applied Physics 57, 2314, March 1985.

RC-11. del Alamo, J. A., S. Swirhun and R. M. Swanson, "Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon", (Invited), International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors, Santa Cruz, CA, July 1984; published in Solid-State Electronics 28, 47, January/February 1985.

RJ-13. del Alamo, J. A., S. Swirhun, and R. M. Swanson, "Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon", Solid-State Electronics 28, 47, January/February 1985.

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