Jesús A. del Alamo

MTL

Publications 1987

RJ-24. del Alamo, J. A., and T. Mizutani, "An In0.52Al0.48As/n+- In0.53Ga0.47As MISFET with a Heavily-Doped Channel", IEEE Electron Device Letters EDL-8, 534, November 1987. (paper)

RJ-23. del Alamo, J. A., and R. M. Swanson, "Minority Carrier Transport in Heavily Doped Silicon: Fundamental Equations", Japanese Journal of Applied Physics (Part 1) 26, 1860, November 1987.

RJ-22. del Alamo, J. A., and R. M. Swanson, "Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters", Solid-State Electronics 30, 1127, November 1987.

RJ-21. del Alamo, J. A., and T. Mizutani, "Rapid Thermal Annealing of InP Using GaAs and InP Proximity Caps", Journal of Applied Physics 62, 3456, October 1987.

RJ-20. del Alamo, J. A., and R. M. Swanson, "Measurement of Steady-State Minority Carrier Transport Parameters in Heavily Doped n-Type Silicon", IEEE Transactions on Electron Devices ED-34, 1580, July 1987. (paper)

RJ-19. del Alamo, J. A., and T. Mizutani, "A Self-Aligned Enhancement-Mode AlGaAs/InP MISFET", IEEE Electron Device Letters EDL-8, 220, May 1987. (paper)

RJ-18. del Alamo, J. A., and R. M. Swanson, "Validity of the Quasi-Transparent Model of the Current Injected into Heavily Doped Emitters of Bipolar Devices", IEEE Transactions on Electron Devices ED-34, 455, February 1987. (paper)

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