Jesús A. del Alamo

MTL

Publications 1989

RC-21. Bennett, R., and J. A. del Alamo, "Index of Refraction Anisotropy in Mismatched InGaAs/InP Heterostructures Measured by Ellipsometry", Fall 1989 Materials Research Society Meeting, vol. 160, Boston, MA, November 1989, pp. 713-718.

RJ-30. del Alamo, J. A., and W. Azzam, "A Floating-Gate Transmission Line-Model (FGTLM) Technique for Measuring Source Resistance in Heterostructures Field-Effect Transistors", IEEE Transactions on Electron Devices 36, 2386, November, 1989. (paper)

RJ-29. del Alamo, J. A., and T. Mizutani, "An In0.52Al0.48As/n+- In0.53Ga0.47As MISFET with a Modulation-Doped Channel, "IEEE Electron Device Letters EDL-10, 394, August 1989. (paper)

RJ-28. del Alamo, J. A., and T. Mizutani, "A Recessed Gate In0.52Al0.49As/n+- In0.53Ga0.47As MIS-type FET", IEEE Transactions on Electron Devices, ED-36, 646, April 1989. (paper)

RJ-27. del Alamo, J. A., and T. Mizutani, "Bias Dependence of fT and fmax in an In0.52Al0.48As/n+- In0.53Ga0.47As MISFET", IEEE Electron Device Letters EDL-9, 654, December 1988.

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