RJ-34. Eugster, C.C., J. A. del Alamo, and M. J. Rooks, "Transport in Novel Gated Quantum Wires: The Impact of Wire Length", Japanese Journal of Applied Physics Letters 29, L2257, December 1990.
RC-29. Eugster, C. C., J. A. del Alamo, P. A. Belk, and M. J. Rooks, "Criteria for One-Dimensional Transport in Split-Gate Field-Effect Transistors", 1990 International Electron Device Meeting, San Francisco, CA, December 1990, p. 335. (paper)
RC-28. Bahl, S. R. and J. A. del Alamo, "A Quantized-Channel In0.52A10.48As/n+-In0.53Ga0.47As HFET with a High Breakdown Voltage", 1990 Fall Meeting of the Materials Research Society, Boston, MA, November 1990 Vol. EA-21, p. 117.
RC-27. Rooks, M. J., G. Snider, E. Hu, C. C. Eugster, and J. A. del Alamo, "GaAs Split-Gate Fabrication for 20nm Patterns on Rough Substrates Using Multilayer PMMA", 1990 Fall Meeting of the Materials Research Society, Boston, MA, November 1990 Vol. EA-26, p. 51.
RC-26. Moran, P. W., S. Elliott, N. Wylie, R. Henderson, and J. A. del Alamo, "A Process Control Methodology Applied to Sub-Micron Gate Lithography in Manufacturing GaAs MMICs", 1990 International Electronics Manufacturing Technology Symposium, October 1990, p. 128. (paper)
RJ-33. Azzam, W.J. and J. A. del Alamo, "An All-Electrical Floating-Gate Transmission Line Model Technique for Measuring Source Resistance in Heterostructure Field-Effect Transistors", IEEE Transaction of Electronic Devices 37, 2105, September 1990. (paper)
RC-25. Moran, P. W., J. A. del Alamo, N. Wylie, R. Henderson, and S. Elliot, "Controlling Variability of Sub-micron Gate Lithography in a GaAs MMIC Manufacturing Environment", Advanced Semiconductor Manufacturing Conference and Workshop, Danvers, MA, September 1990, p. 136A.
RC-24. Bahl, S. R., W. J. Azzam, and J. A. del Alamo, "Orientation Dependence of Mismatched InxAl1-qxAs/In0.47Ga 0.53As HFETs", 6th International Conference on Molecular Beam Epitaxy, San Diego, CA, August 1990; in the Journal of Crystal Growth, 14, 479, 1991.
RC-23. Eugster, C.C., J. A. del Alamo, and M. J. Rooks, "Ballistic Transport in a Novel Gated Quantum Wire", 48th Device Research Conference, Santa Barbara, CA, June 1990; abstract published in IEEE Transaction on Electron Devices.
RC-22. Bahl, S. R., and del Alamo, J. A., "An In0.52A10.48As/n+-InxGa1-xAs Heterostructure Field-Effect Transistor with an In-Enriched Channel", 2nd International Conference on Indium Phosphide and Related Materials, Denver, CO, April 1990, pp. 100-103. (paper)
RJ-32. del Alamo, J. A., and C.C. Eugster, "Quantum Field-Effect Directional Coupler", Applied Physics Letters 56, 78, January 1, 1990.
RJ-31. Bennett, B.R., R.A. Soref, and J. A. del Alamo, "Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP", IEEE Journal of Quantum Electronics 26, 113, January 1990. (paper)