Jesús A. del Alamo

MTL

Publications 1994

RJ-67. Gan, C., J. A. del Alamo, B.R. Bennett, B.S. Meyerson, E.F. Crabbé, C.G. Sodini, and L.R. Reif, Si1-xGex Valence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure", IEEE Transactions on Electron Devices 41, 2430-2439, December 1994. (paper)

RJ-66. Bahl, S.R. and J. A. del Alamo, "Physics of Breakdown in InAlAs/n+-InGaAs Heterostructure Field-Effect Transistors", IEEE Transactions on Electron Devices 41, 2268-2275, December 1994. (paper)

RC-60. Berthold, G., M. Mastrapasqua, C. Canali, M. Manfredi, E. Zanoni, S.R. Bahl, and J. A. del Alamo, "Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure Device", 24th European Solid State Device Research Conference, September 1994, Edinburgh, UK; published in Conference Proceedings, C. Hill and P. Ashburn, Eds., Editions Frontieres, p. 631-634.

RJ-64. Moolji, A.A., S.R. Bahl, and J. A. del Alamo, "Impact Ionization in InAlAs/InGaAs HFETs", IEEE Electron Device Letters 15, 313-315, August 1994. (paper)

RJ-65. Greenberg, D.R. and J. A. del Alamo, "Velocity Saturation in the Extrinsic Device: A Fundamental Limit to HFET's", IEEE Transactions on Electron Devices 41 (8), 1334-1339, August 1994. (paper)

RC-59. Berthold, G., E. Zanoni, M. Manfredi, M. Pavesi, C. Canali, J. A. del Alamo, and S.R. Bahl, "Electroluminescence and Gate Current Components of InAlAs/InGaAs HFETs", 52nd Annual Device Research Conference, Boulder, CO, June 1994. (paper)

RJ-62. Eugster, C.C., J. A. del Alamo, M.J. Rooks, and M.R. Melloch, "1D to 1D Tunneling Between Electron Waveguides", Applied Physics Letters 64, 3157-3159, June 1994. (paper)

RJ-63. Somerville, M.H., D.R. Greenberg, and J. A. del Alamo, "Temperature and Carrier Concentration Dependence of Mobility in a Heavily-Doped Quantum Well", Applied Physics Letters 64, 3276-3278, June 1994. (paper)

RJ-61. Bennett, B.R., J. A. del Alamo, M.T. Sinn, F. Peiró, A. Cornet, and D.E. Aspnes, "Origin of Optical Anisotropy in Strained InxGa1-xAs/InP and InxAl1-xAs/InP Heterostructures", Journal of Electronic Materials 23, 423-429, April 1994.

RC-58. Greenberg, D.R., J. A. del Alamo and R. Bhat, "A Submicron InAlAs/n+-InP HFET with Reduced Impact Ionization", Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, p. 407-410. (paper)

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