RC-78. Fiorenza, J. G., J. A. del Alamo, and D. A. Antoniadis, "An RF Power LDMOS Device on SOI." 1999 IEEE International SOI Conference, Rohnert Park , CA , October 1999, pp. 96-97. (paper)
RJ-84. del Alamo, J. A., and M. H. Somerville, "Breakdown in Millimeter-Wave Power InP HEMTs: A Comparison with GaAs PHEMTs," IEEE Journal of Solid State Circuits, 34 (9), 1204-1211, September 1999. (paper)
RJ-83. Blanchard, R., J. A. del Alamo, S. B. Adams, P. C. Chao, and A. Cornet, "Hydrogen-Induced Piezoelectric Effects in InP HEMTs," IEEE Electron Devices Letters 20 (8), 393-395, August 1999. (paper)
RJ-82. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, "On-State Breakdown in Power HEMTs: Measurements and Modeling", IEEE Transactions on Electron Devices 46 (6), 1087-1093, June 1999. (paper)
RC-77. Blanchard, R. R., J. A. del Alamo, and A. Cornet, "Physical Evidence of Hydrogen Degradation of InP HEMTs," 41st Electronics Materials Conference, Santa Barbara ,CA, June 1999.
RC-72. del Alamo, J. A., M. H. Somerville, and R. R. Blanchard, "Millimeter-Wave InP HEMTs: Challenges and Prospects," invited paper at 1998 European Gallium Arsenide and Related III-V Compounds Application Symposium, Amsterdam (Holland), October 1998, pp. 187-192. Paper published in Microwave Engineering Europe, pp. 49-52, March 1999.