RC-83 Wu, J. H., J. A. del Alamo, and K. Jenkins, "A High Aspect-Ratio Silicon Substrate-Via Technology and Applications: Through-Wafer Interconnects for Power and Ground and Faraday Cages for SOC Isolation." 2000 IEEE International Electron Devices Meeting, San Francisco, CA, December 2000, pp. 477-480. (paper)
RC-82 Fiorenza, J. G., J. A. del Alamo, and D. A. Antoniadis, "Power Performance of RF SOI LDMOSFETs." TECHCON 2000, Phoenix, AZ, September 2000. Unpublished.
RJ-89. Blanchard, R. R., A. Cornet, and J. A. del Alamo, "Titanium Hydride Formation in Ti/Pt/Au-Gated InP HEMTs," IEEE Electron Device Letters, 21 (9), 424-426, September 2000. (paper)
RJ-88. Krupenin, S., R. R. Blanchard, M. H. Somerville, J. A. del Alamo, K. G. Duh, and P. C. Chao, "Physical Mechanisms Limiting the Manufacturing Uniformity of Millimeter-Wave Power InP HEMTs," IEEE Transactions on Electron Devices, 47 (8), 1560-1565, August 2000. (paper)
RJ-87. Appenzeller, J., R. Martel, P. Solomon, K. Chan, Ph. Avouris, J. Knoch, J. Benedict, M. Tanner, S. Thomas, K. L. Wang, and J. A. del Alamo, "Scheme for the Fabrication of Ultra-Short Channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters, 77 (2), 298-300, 10 July 2000.
RJ-86. Somerville, M. H., A. Ernst, and J. A. del Alamo, "A Physical Model for the Kink Effect in InAlAs/InGaAs HEMTs", IEEE Transactions on Electron Devices, 47 (5), 922-930, May 2000. (paper)
RC-79. Blanchard, R. R., and J. A. del Alamo, "Stress-Related Hydrogen Degradation of 0.1 m m InP HEMTs and GaAs PHEMTs." 2000 International Conference on Indium Phosphide and Related Materials, Williamsburg , VA , May 2000, pp. 79-82. (paper)
RJ-85. Appenzeller, J., J. A. del Alamo, R. Martel, K. Chan, and P. Solomon, "Ultrathin 600°C Wet Thermal Silicon Dioxide," Electrochemical and Solid-State Letters, 3 (2), 84-86, February 2000.