RJ-94. Somerville, M. H., C. S. Putnam and J. A. del Alamo, "Determining Dominant Breakdown Mechanisms in InP HEMTs". IEEE Electron Device Letters, 22 (12), 565-567, December 2001. (paper)
RC-87. Mertens, S. D. and J. A. del Alamo, "Electrical Degradation of InAlAs/InGaAs Metamorphic High-Electron Mobility Transistors." 2001 IEEE International Electron Devices Meeting, Washington , DC , December 2001, pp. 193-196. (paper) (viewsgraph)
RC-81. del Alamo, J. A., R. R. Blanchard, and S. Mertens, "Hydrogen Degradation of InP HEMTs and GaAs PHEMTs." Invited paper at 2000 Topical Workshop on Heterostructure Microelectronics, Kyoto, Japan, August 2000, pp. 4-5. Published in IEICE Transactions on Electronics, Vol. E84-C, No. 10, pp. 1289-1293, October 2001.
RC-80. Appenzeller, J., R. Martel, J. Knoch, K. Chan, Ph. Avouris, M. Tanner, K. L. Wang, J. A. del Alamo, and P. Solomon, "A 10 nm MOSFET concept," E-MRS 2000 Spring Meeting, Strasbourg (France), June 2000. Also in Microelectronic Engineering 56, 213-219 (2001).
RJ-93. Wu, J. H., J. Scholvin, J. A. del Alamo and K. A. Jenkins, "A Faraday Cage Isolation Structure for Substrate Crosstalk Suppression". IEEE Microwave and Wireless Components Letters, 11 (10), 410-412, October 2001. (paper)
RJ-92. Wu, J. H., J. Scholvin, and J. A. del Alamo , "An Insulator-Lined Silicon Substrate-Via Technology with High Aspect Ratio". IEEE Transactions on Electron Devices, 48 (9), 2181-2183, September 2001. (paper)
RJ-91. Knoch, J., J. Appenzeller, B. Lengeler, R. Martel, P. Solomon, Ph. Avouris, Ch. Dieker, Y. Lu, K. L. Wang, J. Scholvin, and J. A. del Alamo, "Technology for the Fabrication of Ultrashort Channel Metal-Oxide-Semiconductor Field-Effect Transistors". Journal of Vacuum Science and Technology A, 19 (4), 1737-1741, Jul./Aug. 2001.
RC-86 Appenzeller, J., R. Martel, Ph. Avouris, J. Knoch, Y. Lu, K. L. Wang, J. Scholvin, J. A. del Alamo, and P. Solomon, "Sub-40 nm V-groove MOSFETs." 59th Annual Device Research Conference, Notre Dame (IN), June 25-27, 2001. (paper)
RC-85. Fiorenza, J. G. and J. A. del Alamo, "RF Power Performance of LDMOSFETs on SOI: an Experimental Comparison with Bulk Si LDMOSFETs." IEEE MTT-S International Microwave Symposium 2001, Phoenix , AZ , May 2001. (paper)
RC-84. Mertens, S. D. and J. A. del Alamo, "A Model for Hydrogen-Induced Piezoelectric Effect in InP HEMTs and GaAs PHEMTs." 2001 International Conference on Indium Phosphide and Related Materials, Nara ( Japan ), May 2001, pp. 452-455. (paper)
RJ-90. Fiorenza, J. G., J. A. del Alamo , and D. A. Antoniadis, "RF Power LDMOSFET on SOI," IEEE Electron Device Letters, 22 (3), 139-141, March 2001. (paper)