Jesús A. del Alamo

MTL

Publications 2007

RJ-107. Fischer, J. H., Mitchell, R., and J. A. del Alamo, "Inquiry-Learning with WebLab: Undergraduate Attitudes and Experiences." To be published in Journal of Science Education and Technology, 16 (2007).

RJ-108 Kim, D.-H., J. A. del Alamo, J.-H. Lee, and K.-S. Seo, "Logic Suitability of 50 nm In0.7Ga0.3As HEMTs for Beyond-CMOS Applications." To be published in IEEE Transactions on Electron Devices.

RC-133 J. A. del Alamo, "CMOS Extension via III-V Compound Semiconductors." To be presented at Short Course on Emerging Nanotechnology and Nanoelectronics at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007.

RC-134 Villanueva, A., J. A. del Alamo, T. Hisaka, and R. Ishida, "Drain Corrosion in RF Power GaAs PHEMTs." To be presented at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-135 Kim, D.-H. and J. A. del Alamo, "Logic Performance of 40 nm InAs HEMTs." To be presented at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-136 Joh, J. and J. A. del Alamo, "Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors." To be presented at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-137 Waldron, W., D.-H. Kim, and J. A. del Alamo, "90 nm Self-Aligned InGaAs HEMT for Logic Applications." To be presented at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-132 Fujishiro, H. I., T. Kawabata and J. A. del Alamo, "Quantum Corrected Monte Carlo Analysis of Scaling Behavior of Nano-Scale InGaAs High Electron Mobility Transistors." International Symposium on Compound Semiconductors, Kyoto, Japan, October 15-18, 2007.

RC-131 Joh, J. and J. A. del Alamo, "Effects of Temperature on Electrical Degradation of GaN High Electron Mobility Transistors." To be presented at 7th International Conference on Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007, pp.

NR-72 del Alamo, J. A., "Electrical Degradation Mechanisms in GaN HEMTs." Tri-Service Reliability Workshop on GaN Devices, Army Research Laboratory, Adelphi, MD, August 23-24, 2007.

RC-130 Fujishiro, H. I., T. Kawabata and J. A. del Alamo, "Quantum Corrected Monte Carlo Simulation of Nano-Scale InGaAs High Electron Mobility Transistors." 7th Topical Workshop on Heterostructure Microelectronics, Kirasazu, Chiba, Japan, August 21-24, 2007.

RC-129 del Alamo, J. A., "MIT iLabs: Towards a Community of Internet Accessible Laboratories" Keynote invited paper presented at International Conference on Remote Engineering and Virtual Instrumentation, Porto, Portugal, June 23-24, 2007.

RC-127 Saunier, P, C. Lee, A. Balistreri, D. Dumka, J. Jimenez, H. Q. Tserng, M.Y. Kao, P.C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, "Progress in GaN Performances and Reliability" Invited paper. 2007 Device Research Conference, University of Notre Dame, South Bend, IN, June 18-20, 2007, pp. 31-32.

RC-128 del Alamo, J. A. and D. H. Kim, "InGaAs CMOS: a "Beyond-the-Roadmap" Logic Technology?" Invited paper presented at 2007 Device Research Conference, University of Notre Dame, South Bend, IN, June 18-20, 2007, pp. 201-202.

RC-126 del Alamo, J. A., "RF Power Suitability of Logic CMOS." Workshop on Silicon CMOS PA: from RF to mmWave, 2007 Radio Frequency Integrated Circuit Symposium, June 2, 2007.

RC-125 del Alamo, J. A and D.-H. Kim, "Beyond CMOS: Logic Suitability of InGaAs HEMTs." Invited paper presented at 2007 Indium Phosphide & Related Materials Conference (IPRM), Matsue (Japan), May 14-18, 2007, pp. 51-54.

NR-71 del Alamo, J. A., "III-V CMOS (??!!)". Invited presentation to Special Session of 2007 Indium Phosphide & Related Materials Conference (IPRM), Matsue (Japan), May 14-18, 2007.

Publications 2013

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