Jesús A. del Alamo

MTL

Publications 2008

RC-149 Joh, J., S. Demirtas, and J. A. del Alamo, "Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors." 2008 IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2008, pp. 461-464.

RC-148 Joh, J., J. A. del Alamo, U. Chowdhury and J. L. Jimenez, "Correlation Between RF and DC Reliability in GaN High Electron Mobility Transistors." 2008 Reliability of Compound Semiconductors Workshop, Monterey, CA, October 12, 2008, pp.185-188.

RC-147 Hisaka, T., H. Sasaki, Y. Nogami, K. Hosogi, N. Yoshida, A. A. Villanueva, J. A. del Alamo, S. Hasegawa and H. Asahi, "Degradation Mechanisms of GaAs PHEMTs under Operation in High Humidity Conditions." 2008 Reliability of Compound Semiconductors Workshop, Monterey, CA, October 12, 2008, pp.109-113.

RJ-116 Kim, D.-H. and J. A. del Alamo, "Lateral and Vertical Scaling of In 0.7 Ga 0.3 As HEMTs for Post-Si-CMOS Logic Applications." IEEE Transactions on Electron Devices, 55 (10), 2546-2553, October 2008.

RJ-115 Chowdhury, U., J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S.-Y. Park, T. Lee, J. Wang, M. J. Kim, J. Joh, and J. A. del Alamo, "TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs." IEEE Electron Device Letters, Vol. 29, No. 10, pp. 1098-1100, October 2008.

RC-146 Harward, V. J, J. A. del Alamo, K. Ayodele, P. H. Bailey, K. DeLong, J. Hardison, B. Harrison, O. Ilori, A. Jiwaji, S. R. Lerman, P. D. Long, R. Shroff and H. Soumare, "Building an Ecology of Online Labs." Keynote speech at International Conference on Interactive Computer Aided Learning, Villach, Austria, September 24-28, 2008.

RC-145 Fukuda, S., T. Suemitsu, T. Otsuji, C.-H. Kim, and J. A. del Alamo, "Analysis of Gate Delay Scaling in In 0.7 Ga 0.3 As-Channel HEMTs." International Conference on Solid State Devices and Materials, Tsukuba, Japan, September, 2008, pp. 166-167. Paper published in Japanese Journal of Applied Physics, 48, 04C086 (2009).

RC-144 del Alamo, J. A., D.-H. Kim, and N. Waldron, "III-V CMOS: Challenges and Opportunities." Invited paper at International Conference on Solid State Devices and Materials, Tsukuba, Japan, September, 2008, pp. 28-29.

RC-143 Balistreri, A., J. Jimenez, M. Y. Kao, C. Lee, P. Saunier, P. C. Chao, K. Chu, A. Immorlica, A. Souzis, I. Eliashevich, S. Guo, J. Ditri, P. Bronecke, E. Piner, J. del Alamo, J. Joh, and M. Shur, "Galllium Nitride HEMT Development for Decade-Wide Amplifier Applications." GOMAC 2008.

RJ-114 Kim, D-H. and J. A. del Alamo, "30 nm InAs Pseudomorphic HEMTs on InP Substrate with Current-Gain Cut-off Frequency of 628 GHz." IEEE Electron Device Letters, Vol. 29, No. 8, pp. 830-833, August 2008.

RJ-113 Joh, J., J. A. del Alamo and J. Jimenez, "A Simple Current Collapse Measurement Technique for GaN High Electron Mobility Transistors." IEEE Electron Device Letters, Vol. 29, No. 7, pp. 665-667, July 2008.

RJ-112 Villanueva, A. A., J. A. del Alamo, T. Hisaka, K. Hayashi, and M. Somerville, "Degradation Uniformity of RF Power GaAs PHEMTs under Electrical Stress." Invited Paper , IEEE Transactions on Device and Materials Reliability, Special Issue on III-V Compound Semiconductor Device Reliability, Vol. 8, No. 2, pp. 283-288, June 2008.

RJ-111 Harward, V. J., J. A. del Alamo, S. R. Lerman, P. Bailey, J. Carpenter, K. DeLong, C. Felknor, J. Hardison, B. Harrison, I. Jabbour, P. D. Long, T. Mao, L. Naamani, J. Northridge, M. Schultz, D. Talavera, C. Varadharajan, S. Wang, K. Yehia, R. Zbib, and D. Zych, "The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories." Invited Paper , Proceedings of IEEE Vol. 96, No. 6, pp. 931-950, June 2008.

RJ-110 Joh, J. and J. A. del Alamo, "Critical Voltage for Electrical Degradation of GaN High Electron Mobility Transistors." IEEE Electron Device Letters Vol. 29, No. 4, pp. 287-289, April 2008.

RJ-109 Hisaka, T., Y. Nogami, H. Sasaki, N. Yoshida, K. Hayashi, A. A. Villanueva, and J. A. del Alamo, "Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation." Japanese Journal of Applied Physics, Vol. 47, No. 2, pp. 833-838, 2008.

RC-142 del Alamo, J. A., "CMOS Extension via III-V Compound Semiconductors." Invited tutorial at Spring Meeting of the Materials Research Society. San Francisco, CA, March, 2008.

RC-150 Kim, D.-H. and J. A. del Alamo, "30 nm E-mode InAs PHEMTs for THz and Future Logic Applications." 2008 IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2008, pp. 719-722. Also selected for presentation at ISSCC Special Evening Session on Highlights of IEDM. International Solid-State Circuits Conference, San Francisco, CA, February 8-12, 2009.

RC-141 Saunier, P., C. Lee, J. Jimenez, A. Balistreri, H. Dumka, H. Q. Tserng, M. Y. Kao, U. Chowdhury , P. C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, "Progress in GaN Devices, Performance and Reliability." SPIE Photonics West Conference, San Jose, CA, Jan. 20-24, 2008.

Publications 2014

Publications 2013

Publications 2012

Publications 2011

Publications 2010

Publications 2009

Publications 2008

Publications 2007

Publications 2006

Publications 2005

Publications 2004

Publications 2003

Publications 2002

Publications 2001

Publications 2000

Publications 1999

Publications 1998

Publications 1997

Publications 1996

Publications 1995

Publications 1994

Publications 1993

Publications 1992

Publications 1991

Publications 1990

Publications 1989

Publications 1988

Publications 1987

Publications 1986

Publications 1985

Publications 1984

Publications 1983

Publications 1982

Publications 1981

Publications 1980

Publications 1979

Publications 1978

back to top

© 2011 Massachusetts Institute of Technology | MIT | MTL | EECS |