Jesús A. del Alamo

MTL

Publications 2009

RC-167 Kim, T.-W., D.-H. Kim, and J. A. del Alamo, "30 nm In 0.7 Ga 0.3 As Inverted-Type HEMTs with Reduced Gate Leakage Current for Logic Applications." 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 483-485. (paper) (slides)

RC-166 Kharche, N., G. Klimeck, D.-H. Kim, J. A. del Alamo and M. Luisier, "Performance Analysis of Ultra-Scaled InAs HEMTs." 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 491-494. (paper) (slides)

RC-165 Jin, D., D.-H. Kim, T.-W. Kim and J. A. del Alamo, "Quantum Capacitance in Scaled Down III-V FETs." 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 495-498. (paper) (slides)

RC-164 Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, and B. Brar, "Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs." 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 861. (paper) (slides)

RJ-119 Xia, L. and J. A. del Alamo, "Impact of <110> Uniaxial Strain on N-Channel In 0.15 Ga 0.85 As High Electron Mobility Transistors." Applied Physics Letters, Vol. 95, p. 243504, 2009. (paper)

RJ-118 Joh, J., J. A. del Alamo, U. Chowdhury, H.-Q. Tserng and J. Jimenez, "Measurement of Channel Temperature in GaN High Electron Mobility Transistors." IEEE Transactions on Electron Devices, Vol. 56, No. 12, pp. 2895-2901, December 2009. (paper)

RJ-117 Lin, C.-H., T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U.K. Mishra, and L. J. Brillson, "Nanoscale Mapping of Temperature and Defect Evolution Inside Operating AlGaN/GaN High Electron Mobility Transistors."Applied Physics Letters, Vol. 95, p. 033510, 2009. (paper)

RC-163 Joh, J. and J. A. del Alamo, "Trapping vs. Permanent Degradation in GaN High Electron Mobility Transistors." 8 th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, October 18-23, 2009. (slides) (abstract)

RC-162 Demirtas, S and J. A. del Alamo, "Critical voltage for electrical reliability of GaN High Electron Mobility Transistors on Si Substrate." Reliability of Compound Semiconductors Workshop 2009 (ROCS 2009), Greensboro, NC, October 11, 2009, pp. 53-56.

RC-161 Joh, J., F. Gao, T. Palacios and J. A. del Alamo, "A model for the critical voltage for electrical degradation of GaN high electron mobility transistors." Reliability of Compound Semiconductors Workshop 2009 (ROCS 2009), Greensboro, NC, October 11, 2009, pp. 3-5.

RC-160 del Alamo, J. A. and J. Joh, "GaN HEMT Reliability." Invited talk at 20 th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France, October 5-9, 2009. Paper published in Microelectronics Reliability, vol. 49, pp. 1200-1206, 2009. (paper) (slides)

RC-159 Gogineni, U., J. A. del Alamo, C. Putnam and D. Greenberg, "Modeling Frequency Response of 65 nm CMOS RF Power Devices." TECHCON 2009, Austin, TX, September 14-15, 2009. (paper) (slides)

RC-158 del Alamo, J. A. and D.-H. Kim, "III-V's: From THz HEMTs to CMOS." Plenary Invited talk at 2009 Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, August 25-28, 2009. (slides) (abstract)

RC-157 C.-H. Lin, T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, "Nanoscale Temperature Distribution, Defect Mapping and Evolution Inside Active AlGaN/GaN High Electron Mobility Transistors." 51 st Electronics Materials Conference, University Park, Pennsylvania, June 24-26, 2009. (abstract)

RC-156 Soumare, H., R. Shroff, J. L. Hardison, J. A. del Alamo, V. J. Harward, P. H. Bailey, and K. K. DeLong, "A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities." Sixth International Conference on Remote Engineering and Virtual Instrumentation, Bridgeport, CT, June 22-25, 2009. Paper to be published in International Journal of Online Engineering.

RC-155 Jiwaji, A., J. Hardison, K. P. Ayodele, S. Stevens, A, Mwanbela, V. J. Harward, J. A. del Alamo, B. Harrison, and S. Gikandi, "Collaborative Development of Remote Electronics Laboratories: The ELVIS iLab." 2009 ASEE Annual Conference & Exposition., Austin, TX, June 14-17, 2009.

RC-154 Gogineni, U., H. Hongmei, S. Sweeney, J. Wang, B. Jagannathan, and J. A. del Alamo, "Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices." 2009 IEEE Radio Frequency Integrated Circuit Symposium, Boston, MA, June 7-9, 2009, pp. 163-166.

RC-153 Demirtas, S., J. A. del Alamo, D. A. Gajewski, and A. Hanson, "Lifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process." Compound Semiconductor International Symposium on Manufacturing Technology (CS-MANTECH), Tampa, FL, May 18-21, 2009.

RC-152 del Alamo, J. A., J. Joh, and A. A. Villanueva, "Electrical, thermal and environmental reliability of transistors: experimental techniques to identify fundamental degradation mechanisms." Workshop on Reliability and Manufacturing, Compound Semiconductor International Symposium on Manufacturing Technology (CS-MANTECH), Tampa, FL, May 18-21, 2009.

RC-151 Kim, D.-H. and J. A. del Alamo, "Scalability of sub-100 nm thin-channel InAs PHEMTs." 2009 International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, May 10-14, 2009, pp. 132-135.

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