Jesús A. del Alamo

MTL

Publications 2010

RC-185 Kim, T.-W., D.-H. Kim, and J. A. del Alamo, "60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics." IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 696-699. (Reprint)

RC-184 Kim, D.-H., J. A. del Alamo, P. Chen, W. Ha, M. Urteaga and B. Brar, "50 nm E-Mode In0.7Ga0.3As PHEMTs on 100 mm InP Substrate with fmax>1 THz." IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 692-695. (Reprint)

RC-183 Joh, J. and J. A. del Alamo, "RF Power Degradation of GaN High Electron Mobility Transistors." IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 468-471. (Reprint)

RC-182 del Alamo, J. A., "III-V CMOS: A Sub-10 nm Electronics Technology?" Invited talk at 57th American Vacuum Society International Symposium and Exhibition, Albuquerque, NM, October 17-22, 2010. (slides)

RC-180 Joh, J., P. Makaram, C. V. Thompson, and J. A. del Alamo, "Planar View of Structural Degradation in GaN High Electron Mobility Transistors: Time and Temperature Dependence." Invited talk at International Workshop on Nitride Semiconductors (IWN 2010), Tampa, FL, Sept. 19-24, 2010. (slides)

RJ-128 Joh, J. and J. A. del Alamo, "A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors." IEEE Transactions on Electron Devices, Vol. 48, No. 1, pp. 132-140, January 2011. (paper)

RJ-127 Kim, D.-H. and J. A. del Alamo, "30 nm InAs PHEMTs with f T =644 GHz and f max =681 GHz." IEEE Electron Device Letters, Vol. 31, No. 8, pp. 806-808, August 2010. (paper)

RJ-126 Kim, D.-H. and J. A. del Alamo, "Scalability of sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications." IEEE Transactions on Electron Devices, Vol. 57, No. 7, pp. 1504-1511, July 2010. (paper)

RJ-125 Makaram, P., J. Joh, J. A. del Alamo, T. Palacios, C. V. Thompson, "Evolution of Structural Defects Associated with Electrical Degradation in AlGaN/GaN HEMTs." Applied Physics Letters, Vol. 96, p. 233509, 2010. (paper)

RC-179 Makaram, P., J. Joh, C. V. Thompson, J. A. del Alamo, and T. Palacios, "Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress." Electronics Materials Conference, Notre Dame, IN, June 23-25, 2010. (paper) (slides)

RC-178 del Alamo, J. A., D.-H. Kim, D. Jin, and T.-W. Kim, "10 nm CMOS: The Prospects for III-Vs." Invited talk at Workshop on Post-Si CMOS Electronic Devices: the Role of Ge and III-V Materials of the European Materials Research Society Symposium, Strasbourg, France, June 8-10, 2010. (slides)

RC-177 Xia, L. and J. A. del Alamo, "Mobility enhancement in Indium-rich N-channel InxGa1-xAs HEMT by Application of <110> Uniaxial Strain." 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010, pp. 504-507. (paper)

RC-176 Kim, T.-W., D.-H. Kim and J. A. del Alamo, "Logic Characteristics of 40 nm thin-channel InAs HEMTs." 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010, pp. 496-499. (paper) (slides)

BC-2 Liu, Y., H. S. Pal., M. S. Lundstrom, D.-H. Kim, J. A. del Alamo, and D. A. Antoniadis, "Device Physics and Performance Potential of III-V Field-Effect Transistors"; book chapter in "Fundamental of III-V Semiconductor MOSFETs", S. Oktyabrsky and P. D. Ye (editors), Springer Science, pp. 31-49 (2010). (paper)

RJ-124 Wu, J. H., and J. A. del Alamo, "Fabrication and Characterization of through-Substrate Interconnects." IEEE Transactions on Electron Devices, Vol. 57, No. 6, pp. 1261-1268, June 2010. (paper)

RC-175 Joh, J. and J. A. del Alamo, "Reliability and Failure Mechanisms of GaN-based HEMTs." Invited talk at 10th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2010), Darmstadt/Seeheim, Germany, May 19-21, 2010, pp. 57-58.

RC-174 Joh, J., J. A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva, "Material Degradation around the Critical Voltage in GaN HEMTs." 34th European Workshop on Compound Semiconductors and Integrated Circuits (WOCSDICE 2010), Darmstadt/Seeheim, Germany, May 17-19, 2010, pp. 211-212.

RC-173 Joh, J., J. A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva, "Correlation between electrical and material degradation in GaN HEMTs stressed beyond the critical voltage." Reliability of Compound Semiconductors Workshop (ROCS 2010), Portland, OR, May 17, 2010. Paper to be published in Microelectronics Reliability. (paper)

RC-172 Demirtas, S. and J. A. del Alamo, "Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors." 2010 International Reliability Physics Symposium, Anaheim, CA, May 2-6, 2010, pp. 134-138. (paper)

RJ-123 Gogineni, U., H. Li, J. A. del Alamo, S. Sweeney, J. Wang, and B. Jagannathan, "Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices." IEEE Journal of Solid State Circuits, Vol. 45, No. 5, pp. 998-1006, May 2010. (paper)

RC-171 del Alamo, J. A. and D.-H. Kim, "The prospects for 10 nm III-V CMOS." Invited talk at 2010 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 26-28, 2010, pp. 166-167.

RC-170 Kim, D.-H. and J. A. del Alamo, "InGaAs HFETs for Beyond-the-roadmap CMOS." Invited paper at 217th Electrochemical Society Meeting, Wide-Bandgap Semiconductor Materials and Devices 11 and State-of-the-art Program on Compound Semiconductors 52 (SOTAPOCS 52), Vancouver, BC, April 25-30, 2010.

RJ-122   Hisaka, T., H. Sasaki, T. Katoh, K. Kanaya, T. Oku, N. Yoshida, A. A. Villanueva, and J. A. del Alamo, "Simultaneous achievement of high performance and high reliability in a 38/77 GHz InGaAs/AlGaAs PHEMT MMIC." IEICE Electronics Express, Vol. 7, No. 8, pp. 558-562, April 2010. (paper)

RC-169 Hardison, J. L., K. DeLong, V. J. Harward, J. A. del Alamo, R. Shroff, and O. Oyabode, "Enabling Remote Design and Troubleshooting Experiments Using the iLab Shared Architecture." Earth & Space 2010 Conference, Honolulu, Hawaii, March 14-17, 2010. Best paper award.

RJ-121 Waldron, N., D.-H. Kim and J. A. del Alamo, "A Self-Aligned InGaAs HEMT Architecture for Logic Applications." IEEE Transactions on Electron Devices, Vol. 56, No. 1, pp. 297-304, January 2010. (paper)

RC-168 Gogineni, U., J. A. del Alamo, and C. Putnam, "RF Power Potential of 45 nm CMOS Technology." 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, LA, January 11-13, 2010, pp. 204-207. (paper)

Publications 2013

Publications 2012

Publications 2011

Publications 2010

Publications 2009

Publications 2008

Publications 2007

Publications 2006

Publications 2005

Publications 2004

Publications 2003

Publications 2002

Publications 2001

Publications 2000

Publications 1999

Publications 1998

Publications 1997

Publications 1996

Publications 1995

Publications 1994

Publications 1993

Publications 1992

Publications 1991

Publications 1990

Publications 1989

Publications 1988

Publications 1987

Publications 1986

Publications 1985

Publications 1984

Publications 1983

Publications 1982

Publications 1981

Publications 1980

Publications 1979

Publications 1978

back to top

© 2011 Massachusetts Institute of Technology | MIT | MTL | EECS |