Jesús A. del Alamo

MTL

Publications 2012

RC-210 Kim, T.-W. , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, "ETW-QW InAs MOSFETs with Scaled Body for Improved Electrostatics." IEEE International Electron Devices Meeting, San Francisco, CA, December 10-12, 2012, pp. 765-768. (paper)

RC-209 Lin, J., D. A. Antoniadis, and J. A. del Alamo, "Sub-30 nm In As Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator." IEEE International Electron Devices Meeting, San Francisco, CA, December 10-12, 2012, pp. 757-760. (paper) (slides)

RC-208 del Alamo, J. A., "Nanometer-Scale III-V CMOS." Short Course on the Future of Semiconductor Devices and Integrated Circuits at 34th IEEE Compound Semiconductor IC Symposium (CSICS), San Diego, CA, October 14, 2012. (slides)

RJ-139 Jin, D. and J. A. del Alamo, "Impact of high-power stress on dynamic ON resistance of high-voltage GaN HEMTs." Microelectronics Reliability, Vol. 52, pp. 2875-2879 (2012). (paper)

RJ-140 Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.-W. Kim, "Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator." Applied Physics Letters, Vol. 101, p. 223507, 2012. (paper)

RJ-138   Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, "Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale." IEEE Transactions on Electron Devices, Vol. 59, No. 10, pp. 2667-2674, October 2012. (paper)

RC-207 del Alamo, J. A. and D.-H. Kim, "InAs High-Electron Mobility Transistors on the Path to THz Operation." Invited paper at International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, September 25-27, 2012. (paper) (slides)

RC-204 Malani, S., G. N. S. Prasanna, J. A. del Alamo, J. L. Hardison, K. Moudgalya, and V. Chopella, "Issues faced in a Remote Instrumentation Laboratory." IEEE International Conference on Technology for Education (T4E), Hyderabad, India, July 18-20, 2012. (paper)

RC-203 Kim, T.-W., R. J. W. Hill, D.-H. Kim, J. A. del Alamo, C. D. Young, D. Veksler, C. Y. Kang, J. Oh, C. Hobbs, P. Kirsch and R. Jammy, "InAs Quantum-Well MOSFET (Lg=100 nm) for Logic and Microwave Applications." Invited talk at 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012). Naja (Japan), June 27-29, 2012. (paper) (slides)

RC-202 Kim, T.-W., R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch and R. Jammy, "InAs Quantum-Well MOSFET (Lg=100 nm) with Record High gm, fT and fmax." 2012 Symposium on VLSI Technology. Honolulu (HI), June 12-15, 2012, pp. 179-180. (paper) (slides)

RC-201 Jin, D. and J. A. del Alamo, "Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs." 24th IEEE International Symposium on Power Semiconductor Devices and ICs. Brugge (Belgium), June 3-7, 2012. (paper)

RJ-136 Lin, J., T.-W. Kim, D. A. Antoniadis and J. A. del Alamo, "A Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process." Applied Physics Express, Vol. 5, p. 064002, May 16, 2012. (paper)

RC-200 Jin, D. and J. A. del Alamo, "Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs." 2012 Reliability of Compound Semiconductors Symposium (ROCS). Boston (MA), April 23, 2012. (paper) (slides)

RJ-135 Li, L., J. Joh, J. A. del Alamo and C. V. Thompson, "Spatial distribution of structural degradation under high-power stress in AlGaN/GaN High-Electron Mobility Transistors." Applied Physics Letters, Vol. 100, Issue 17, p. 172109, April 2012. (paper)

RC-199 del Alamo, J. A., "Recent progress in understanding the DC and RF reliability of GaN high-electron mobility transistors" Invited talk to be presented at Materials Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012. (slides)

RC-198 Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, "Strain and temperature dependence of defect formation at AlGaN/GaN high-electron mobility transistors on a nanometer scale." Materials Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012. (slides)

RJ-134 Joh, J. and J. A. del Alamo, "Impact of gate placement on RF degradation in GaN high electron mobility transistors." Microelectronics Reliability, Vol. 52, No. 1, pp. 33-38, January 2012. (paper)

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