Publications 2013
RJ-142 Araghchini, M., J. Chen, V. Doan-Nguyen, D. V. Harburg, D. Jin, J. Kim, M. S. Kim, S. Lim, B. Lu, D. Piedra, J. Qiu, J. Ranson, M. Sun, X. Yu, H. Yun, M. G. Allen, J. A. del Alamo, G. DesGroseilliers, F. Herrault, J. H. Lang, C. G. Levey, C. Murray, D. Otten, T. Palacios, D. J. Perreault and C. R. Sullivan, "A technology overview of the PowerChip development program." IEEE Transactions on Power Electronics, Vol. 28, No. 9, pp. 4182-4201, September 2013. (paper)
RC-214 del Alamo, J. A., “Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS Technologies.” Invited Joint Plenary Talk, European Solid-State Electron Devices Conference (ESSDERC) and European Solid-State Electron Circuits Conference (ESSCIRC), Bucharest, Romania, September 16-20, 2013.
RC-213 del Alamo, J. A., “InGaAs Nanoelectronics: from THz to CMOS.” Invited Plenary Talk, 9th International Conference on Electron Devices and Solid State Circuits (EDSSC), Hong-Kong, June 3-5, 2013.
RC-212 Guo, A. and J. A. del Alamo, “Mo/n+-InGaAs Nanocontacts for Future III-V MOSFETs.” To be presented at 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan, May 19-23, 2013.
RC-211 del Alamo, J. A. , “THz III-V HEMT Technology.” Short Course on THz Transistors and Packaging Integration Technologies, International Wireless Symposium, Beijing, China, April 14-18, 2013. (slides)
NR-99 del Alamo, J. A., "III-Vs for CMOS Beyond Silicon." MIT Lincoln Laboratory Advanced Research and Technology Symposium, MIT Lincoln Laboratory, Feb. 26-27, 2013. (slides)
RJ-141 Kim, D.-H., T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang, C. Hobbs, P. Kirsch, J. A. del Alamo, and R. Jammy, "High-Speed E-Mode InAs QW MOSFET with Al2O3 Insulator for Future RF Applications." IEEE Electron Device Letters, Vol. 34, No. 2, pp. 196-198, February 2013. (paper)