Publications 2013RC-220 Jin, D., J. Joh, S. Krishnan, N. Tipirneni, S. Pendharkar and J. A. del Alamo, “Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping.” To be presented at IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013.
RC-219 Zhao, X., J. Lin, C. Heidelberger, E. A. Fitzgerald and J. A. del Alamo, "Vertical Nanowire InGaAs MOSFETs Fabricated by a Top-down Approach." To be presented at IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013.
RC-218 del Alamo, J. A., D. Antoniadis, A. Guo, D.-H. Kim, T.-W. Kim, J. Lin, W. Lu, A. Vardi, and X. Zhao, “InGaAs MOSFETs for CMOS: recent advances in process technology.” Invited Talk to be presented at IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013.
RC-217 Lin, J., X. Zhao, T. Yu, D. A. Antoniadis, and J. A. del Alamo, “A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight Pitch Process.” To be presented at IEEE International Electron Devices Meeting, Washington DC, December 9- 11, 2013.
RJ-144 Jin, D. and J. A. del Alamo, ”Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors.” IEEE Transactions on Electron Devices, Vol. 60, No. 10, pp. 3190-3196, October 2013. (paper)
RJ-143 Araghchini, M., J. Chen, V. Doan-Nguyen, D. V. Harburg, D. Jin, J. Kim, M. S. Kim, S. Lim, B. Lu, D. Piedra, J. Qiu, J. Ranson, M. Sun, X. Yu, H. Yun, M. G. Allen, J. A. del Alamo, G. DesGroseilliers, F. Herrault, J. H. Lang, C. G. Levey, C. Murray, D. Otten, T. Palacios, D. J. Perreault and C. R. Sullivan, "A technology overview of the PowerChip development program." IEEE Transactions on Power Electronics, Vol. 28, No. 9, pp. 4182-4201, September 2013. (paper)
RJ-142 Wu, J. H. and J. A. del Alamo, "Design and Modeling of Faraday Cages for Substrate Noise Isolation." Solid State Electronics Vol. 85, pp. 6-11 (2013). (paper)
RC-216 Kim, D.-H., T.-W. Kim, R. Hill, C. Y. Kang, C. Hobbs, J. A. del Alamo, W. Maszara and P. Kirsch, “High-Frequency Characteristics in InGaAs Quantum-Well MOSFETs.” Invited paper at International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, September 25-27, 2013. (paper)
RC-215 del Alamo, J. A., "Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS Technologies." Invited Joint Plenary Talk, European Solid-State Electron Devices Conference (ESSDERC) and European Solid-State Electron Circuits Conference (ESSCIRC), Bucharest, Romania, September 16-20, 2013. (paper) (slides)RC-214 Guo, A. and J. A. del Alamo, “Nanoscale Metal Contacts to n+-InGaAs for future III-V MOSFETs.” TECHCON, Austin, TX, September 9-10, 2013.
RC-213 del Alamo, J. A., "InGaAs Nanoelectronics: from THz to CMOS." Invited Plenary Talk, 9th International Conference on Electron Devices and Solid State Circuits (EDSSC), Hong-Kong, June 3-5, 2013. (slides)RC-212 Guo, A. and J. A. del Alamo, “Mo/n+-InGaAs Nanocontacts for Future III-V MOSFETs.” 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan, May 19-23, 2013.
RC-211 del Alamo, J. A. , "THz III-V HEMT Technology." Short Course on THz Transistors and Packaging Integration Technologies, International Wireless Symposium, Beijing, China, April 14-18, 2013. (slides)
NR-99 del Alamo, J. A., "III-Vs for CMOS Beyond Silicon." MIT Lincoln Laboratory Advanced Research and Technology Symposium, MIT Lincoln Laboratory, Feb. 26-27, 2013. (slides)
RJ-141 Kim, D.-H., T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang, C. Hobbs, P. Kirsch, J. A. del Alamo, and R. Jammy, "High-Speed E-Mode InAs QW MOSFET with Al2O3 Insulator for Future RF Applications." IEEE Electron Device Letters, Vol. 34, No. 2, pp. 196-198, February 2013. (paper)