Jesús A. del Alamo

MTL

Publications 2014

RC-226 Ni, K., E. X. Zhang, M. W. McCurdy, N. C. Hooten, W. G. Bennett, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, T. W. Kim and J. A. del Alamo, “Single Event Transient Response of InAs Quantum-Well MOSFETs.” To be presented at Nuclear and Space Radiation Effects Conference (NRSEC), Paris, France, July 14-18, 2014.

RC-225 Lin, J., L. Czornomaz, N. Daix, D. Antoniadis, and J. A. del Alamo, “Ultra-Thin-Body Self-Aligned InGaAs MOSFETs on Insulator (III-V-O-I) by a Tight-Pitch Process.” To be presented, 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014.

RC-224 Vardi, A., X. Zhao, and J. A. del Alamo, “InGaAs Double-Gate Fin-Sidewall MOSFETs.” To be presented, 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014.

RC-223 Gao, F., C. V. Thompson, J. A. del Alamo, and T. Palacios, “Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs.” Invited Talk at CS MANTECH, Denver, CO, May 19-22, 2014. (paper) (slides)

RC-222 Wu, Y., C.-Y. Chen, and J. A. del Alamo, “Temperature-Accelerated Degradation of GaN HEMTs under High-Power Stress: Activation Energy of Drain Current Degradation.” Reliability of Compound Semiconductors Workshop (ROCS), Denver, CO, May 19, 2014, pp. 69-73. (paper) (slides)

RJ-148 Zhao, X. and J. A. del Alamo, "Nanometer-scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs." IEEE Electron Device Letters, Vol. 35, No. 4, pp. 521-523, May 2014. (paper)

RJ-147 Lin, J., X. Zhao, D. A. Antoniadis, and J. A. del Alamo, ”A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 4, pp. 440-442, April 2014. (paper)

RC-221 del Alamo, J. A., “III-V MOSFETs for CMOS: Recent Advances in Process Technology.” Invited Talk at Semicon Korea 2014, Seoul, Korea, February 12-14, 2014. (slides)

RJ-146 Lu, W., A. Guo, A. Vardi, and J. A. del Alamo, ”A Test Structure to Characterize Nano-scale Ohmic Contacts in III-V MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 2, pp. 178-180, February 2014. (paper)

RJ-145 Gao, F., S. C. Tan, J. A. del Alamo, C. V. Thompson, and T. Palacios, ”Impact of Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, Vol. 61, No. 2, pp. 437-444, February 2014. (paper)

 

 

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