RC-259 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” Plenary Session Invited Talk to be presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Indian Wells, CA, AZ, May 22-25, 2017.
RC-258 del Alamo, J. A., “III-V Channel Transistors.” Short Course Lecture to be presented at International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 24-27, 2017.
RC-257 Wu, Y. and J. A. del Alamo, “Gate current degradation in W-band InAlN/AlN/GaN HEMTs under Gate Stress.” To be presented at IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017.
RC-256 Warnock, S. and J. A. del Alamo, “Off-State TDDB in High-Voltage GaN MIS-HEMTs.” To be presented at IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017.
RJ-172 Chou, P.-C., S.-H. Chen, T.-E. Hsieh, S. Cheng, J. A. del Alamo, and E. Y. Chang, “Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications.” Energies, vol. 10, p. 233, 2017. (paper)