Jesús A. del Alamo

MTL

Publications 2017

RJ-177 Zhao, X., C. Heidelberger, E. A. Fitzgerald, and J. A. del Alamo, ”Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs.” To be published in IEEE Transactions on Electron Devices.

RJ-176 Guo, A. and J. A. del Alamo, “Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs.” To be published in IEEE Transactions on Electron Devices.

RC-259 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” Plenary Session Invited Talk to be presented at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Indian Wells, CA, AZ, May 22-25, 2017.

RC-258 del Alamo, J. A., “III-V Channel Transistors.” Short Course Lecture to be presented at International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 24-27, 2017.

RC-257 Wu, Y. and J. A. del Alamo, “Gate current degradation in W-band InAlN/AlN/GaN HEMTs under Gate Stress.” To be presented at IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017.

RC-256 Warnock, S. and J. A. del Alamo, “Off-State TDDB in High-Voltage GaN MIS-HEMTs.” To be presented at IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017.

RJ-175 Hemmi, F., C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, R. Otsuji and T. Suemitsu, “Neutral Beam Etching for Device Isolation in AlGaN/GaN HEMTs.” Physica Status Solidi A: Applications and Materials Science, Vol. 214, No. 3, pp. 1600617, March 2017. (paper)

RJ-174 López-Villegas, J. M., N. Vidal and J. A. del Alamo, “Optimized Toroidal Inductors versus Planar Spiral Inductors in Multilayered Technologies.” IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 2, pp. 423-432, February 2017. (paper)

RJ-173 Kai, N., E. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Nuclear Science, Vol. 64, No. 1, pp. 239-244, January 2017. (paper)

RJ-172 Chou, P.-C., S.-H. Chen, T.-E. Hsieh, S. Cheng, J. A. del Alamo, and E. Y. Chang, “Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications.” Energies, vol. 10, p. 233, 2017. (paper)

Publications 2017

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