Microelectronics has transformed human society in the last 50 years like no other technology before. The microelectronics revolution has brought immeasurable improvements in the quality of life for billions of people through its impact on communications, computation, health, transportation, energy, education and entertainment, to name a few areas of human concern. As microelectronics becomes transformed into nanoelectronics, the challenges to maintain this revolutionary progress mount.
Our research group at MIT investigates new transistor designs with the goal of pushing the frontiers of electronics to higher frequencies, higher speed, smaller size, lower power consumption, higher operating temperature or to switch electrical power or amplify electrical signals at higher power levels. This is relevant for applications in computation, communications, signal processing, and energy management. Our research currently emphasizes III-V and III-N compound semiconductors but we are also interested in newer materials such as diamond.
Our research is eminently experimental. We prototype our own transistors at the facilities of the Microsystems Technology Laboratories and the Electron Beam Lithography laboratory at MIT. We design them using our CAD tools and we fabricate them in our clean rooms. We then characterize their operation in our own measurement laboratory. Our transistor prototyping research is based on heterostructures acquired from commercial sources or from a wide range of collaborators from all over the world.
We also study the reliability of transistors under prolonged electrical, thermal and environmental stress. We build models and carry out simulations in order to understand the underlying degradation physics. All our reliability research is performed in close connection with industrial partners that supply us with devices.
Here is a current list of active research projects:
- Self-aligned InGaAs Quantum-Well MOSFETs
- InGaAs FinFETs
- InGaAs Vertical Nanowire MOSFETs
- InGaAs Vertical Nanowire Tunneling FETs (TFETs)
- InGaSb p-channel Quantum-Well MOSFETs and FinFETs
- Nanoscale ohmic contacts
- Bias stress instability of GaN MOSFETs
- Oxide breakdown in High-Voltage GaN FETs
- Reliability of InAlN/GaN High Electron Mobility Transistors (HEMTs)
- Diamond MOSFETs