Research

Our research group focuses on the development of hybrid MEMS-IC devices for low-power wireless communication, microprocessor clocking, and sensor applications. In particular, we are working to harness the benefits of acoustic vibrations to enhance the performance of next-generation electron devices.

We are also pursuing the integration of such hybrid devices into CMOS-based systems, including low-power, narrow-bandwidth low noise amplifiers for transceivers and low phase-noise oscillator arrays for clock generation and temperature sensing in microprocessors.

Latest News

10.2011   "Si-based unreleased hybrid MEMS-CMOS resonators in 32nm technology" to be presented by Radhika Marathe at MEMS'12 in Paris (Jan 29-Feb 2). This work presents the first hybrid RF MEMS-CMOS resonators demonstrated in Silicon at the transistor level of IBM’s 32nm SOI CMOS process, without the need for any post-processing or packaging. The unreleased, Si bulk acoustic resonators operating at 10-12 GHz are driven capacitively and sensed using a Field Effect Transistor (FET).

06.2011   FCS'11: "Acoustic Bragg reflectors for Q-enhancement of unreleased MEMS resonators," published on analysis and simulation for optimal design of bulk-mode unreleased resonators using acoustic Bragg reflectors (ABR) to confine vibrations. 1D and 2D ABRs are compared with phononic crystal performance for unreleased devices.

02.2011   Wentao Wang to present "Acoustic Bragg reflectors for Q-enhancement of unreleased MEMS resonators," at IEEE FCS 2011, San Francisco, CA, May 1-5, 2011.

01.2011   MEMS'11: "An unreleased mm-wave resonant body transistor" published on the demonstration of an unreleased Resonant Body Transistor operating at 39 GHz, surrounded on all sides by SiO2. An f.Q product of 5e12 is comparable to most released Si-based resonators at octaves lower frequency.

10.2010   Wentao Wang to present "An unreleased mm-wave resonant body transistor," at IEEE MEMS 2011, Cancun, Mexico, Jan. 23-27, 2011.

06.2010   "Acoustic Resonance in an Independent-Gate FinFET" presented at Hilton Head 2010. This device demonstrates 1st harmonic acoustic resonance at 37 GHz with a Q of 560 using a standard 2 port measurement.

04.2010   DARPA Young Faculty Award (YFA) for "Multi-GHz Acoustic Resonance in Transistors"

03.2010   "The Resonant Body Transistor" published in Nano Letters.