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Fall 2007
6.774 Physics of Microfabrication: Front End Processing
Prereq: 6.152J
G
3-0-9 H- Level Grad Credit
Class website: http://web.mit.edu/6.774/
Text (required): Silicon VLSI Technology: Fundamentals, Practice and Modeling,
by Plummer, Deal and Griffin, Prentice Hall, July 2000
Office Hours: By appointment, usually after class
Assistant: Michele Hudak 39-427 (617 253 0584, hudak@mit.edu)
Tentative Class Schedule: Tuesdays and Thursdays 9:00am-10:30am Room 8-205
Fundamental principles of the processes used in the fabrication of silicon
monolithic integrated circuits. Physical models of bulk crystal growth
thermal oxidation, solid-state diffusion, ion implantation, epitaxial deposition,
chemical vapor deposition, and physical vapor deposition. Refractory metal
silicides, plasma and reactive ion etching, and rapid thermal processing.
Process modeling and simulation. Technological limitations on integrated
circuit design and fabrication. Impact of processing on device operation.
New module on SiGe materials and processing.
6.774 Course Goals
To become familiar with the fundamental principles of the processes used
in the fabrication of devices for silicon integrated circuits, with emphasis on
Si CMOS. This includes advanced physical models and practical aspects
of major processes, such as crystal growth, thermal oxidation, solid-state
diffusion, ionimplantation, epitaxial growth, etching, silicides, and process
integration. Emphasis on physical understanding. Models and computer
simulation tools will be used to help understand complex processes and
interactions.
