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Dr. Hoyt pioneered the development of strained Si MOSFET technology in the 1990s. Her present research interests are in the areas of novel silicon-based heterostructure and nanostructure devices, new processes and materials for advanced device applications, Si heteroepitaxy, and CMOS front-end process integration. She has authored or co-authored over 100 publications in these areas, and holds 6 patents. Dr. Hoyt received the IEEE Electron Devices Society Rappaport Award in 1990, and the IEEE George E. Smith Award in 2005. She served as the General Chair of the IEEE International Electron Devices Meeting (IEDM) in 2001, and is a member of the Electron Devices Society, the American Physical Society, and the Materials Research Society.