Dr. Hoyt pioneered the development of strained Si MOSFET technology in the 1990s. Her present research interests are in the areas of novel silicon-based heterostructure and nanostructure devices, new processes and materials for advanced device applications, Si heteroepitaxy, and CMOS front-end process integration. She has authored or co-authored approximately 100 publications in these areas, and holds 4 patents. Dr. Hoyt received the IEEE Electron Devices Society Rappaport Award in 1990. She has served as General Chair of the IEEE International Electron Devices Meeting (2001), and is a member of the Electron Devices Society, the American Physical Society, and the Materials Research Society.