Seminars from MTL

April 27, 2018
GaN and Other Extreme Materials
Tomas Palacios, MIT
  • Tomas Palacios
  • As we approach the ultimate limits for transistor scaling, exciting new opportunities arise to redefine electronics. This talk will describe some of these opportunities, such as how the direct wide bandgap of new semiconductor materials like Gallium Nitride (GaN) enables to significantly improve the performance of power electronics, wireless communications and, even, digital computers. At the same time, atomically-thin materials like graphene and molybdenum disulfide (MoS2) are destined to change the form-factor of electronics. This will create a new generation of electronic systems the size of a biological cell, or distributed sensing that covers entire countries. In summary, although electronics has gone a long way in the last 60 years, we are just starting to scratch the surface of its full potential. The intersection of some of these extreme materials with silicon creates unprecedented opportunities for increasing, by orders of magnitude, the impact and reach of electronics in the 21st Century.

  • Prof. Tomás Palacios is a Professor in the Department of Electrical Engineering and Computer Science at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Universidad Politécnica de Madrid (Spain). His current research focuses on demonstrating new electronic devices and applications for novel semiconductor materials such as graphene and gallium nitride. His work has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios is the founder and director of the MIT MTL Center for Graphene Devices and 2D Systems, as well as the Chief Advisor and co-founder of Cambridge Electronics, Inc. He is a Fellow of the IEEE.