[labnetwork] how to reduce the contact resistance of metal-germanium?

[Ben]

Hello all,

 

I’m in a project of building electronic device on bulk germanium wafer, and
find out the contact resistance become a limitation of the performance.

Because the band pining of germanium-metal interface especially the N-type
germanium, the resistance is hard to be reduced with the high Schottky
barrier.

One way is to use highly dosed germanium but it seem there is limitation to
increase the electron activated  concentration for germanium.

Is there any good way to reduce the contact resistance? 

 

Thank you 

 

Regards

Ben 

 

Boston University

Phone: 857-366-2675

Address： 8 ST.Mary’s street Room 609

                       Boston, MA 02215

 

 

 

 

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