[labnetwork] Results of the STS RIE oxide etch mystery

[Bernard Alamariu]

Hi,

Great!

I understood that you can sustain a 1,000A/ min  SiO2 etch with CFn+ 
ions from a Solid Teflon Source,
triggered by O2 plasma. Correct?

Very Interesting! Do you plan to make Patent application?

I think that would be a very good example of the just as they said: 
"Don't let a Crisis go to Waste!"

Thanks, Bernard


On 8/10/11 3:57 PM, Morrison, Richard H., Jr. wrote:
>
> Hi Everyone,
>
> I would like to thanks the many people that responded to my initial 
> email about the STS RIE tool etching SiO2 during an O2 plasma.
>
> To sum up:
>
> We replaced the vacuum pump to ensure no oil back streaming (Ebara dry 
> pump), no change in etch rate or in the plasma emission.
>
> We replaced the cover o-ring (old one had Fomblin grease), no change 
> in etch rate or in the plasma emission.
>
> Scrubbed the walls and ran long multi hour O2 clean, no change in etch 
> rate or in the plasma emission.
>
> Removed the Teflon Shield Ring (installed around the chuck), etch rate 
> went to zero and F was gone from the plasma emissions.
>
> So it appears that the O2 plasma is liberating F from the Teflon ring 
> which in turns etches the SiO2. We are consulting STS to see if there 
> is a fix. If there is I will let you all know.
>
>
> Thanks
>
> Rick
>
> Rick Morrison
>
> Senior Member Technical  Staff
>
> Acting Group Leader Mems Fabrication
>
> Draper Laboratory
>
> 555 Technology Square
>
> Cambridge, MA  02139
>
> 617-258-3420
>
>
>
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