From matthieu.nannini at mcgill.ca Tue Jul 5 12:13:49 2011 From: matthieu.nannini at mcgill.ca (Matthieu Nannini, Dr.) Date: Tue, 5 Jul 2011 12:13:49 -0400 Subject: [labnetwork] prospecting tools Message-ID: Dear labnetwork, We are prospecting possible tools for our lab and I would like to have feedback and recommendations from the community about the followings: - ALD - ICP for III-V or Ga-based materials thanks in advance ----------------------------------- Matthieu Nannini McGill Nanotools Microfab Manager t: 514 398 3310 c: 514 758 3311 f: 514 398 8434 http://miam2.physics.mcgill.ca/ ------------------------------------ From lxie at cns.fas.harvard.edu Wed Jul 6 10:43:04 2011 From: lxie at cns.fas.harvard.edu (Xie, Ling) Date: Wed, 6 Jul 2011 10:43:04 -0400 Subject: [labnetwork] prospecting tools In-Reply-To: References: Message-ID: <8F95EA77ACBF904A861E580B44288EFD99BBBFEBAC@FASXCH02.fasmail.priv> We have had the Unaxis Shuttleline ICP system for III-V materials for ~6 years and satisfied with its performance and processes. Ling Xie, Ph. D Principal Scientist Center for Nanoscale Systems Harvard University 11 Oxford St. Cambridge, MA o2138 617-496-9069 lxie at cns.fas.harvard.edu -----Original Message----- From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Matthieu Nannini, Dr. Sent: Tuesday, July 05, 2011 12:14 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] prospecting tools Dear labnetwork, We are prospecting possible tools for our lab and I would like to have feedback and recommendations from the community about the followings: - ALD - ICP for III-V or Ga-based materials thanks in advance ----------------------------------- Matthieu Nannini McGill Nanotools Microfab Manager t: 514 398 3310 c: 514 758 3311 f: 514 398 8434 http://miam2.physics.mcgill.ca/ ------------------------------------ _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork From hbtusainc at yahoo.com Wed Jul 6 11:44:44 2011 From: hbtusainc at yahoo.com (Mario Portillo) Date: Wed, 6 Jul 2011 08:44:44 -0700 (PDT) Subject: [labnetwork] GCA equipment owners Message-ID: <1309967084.47507.YahooMailClassic@web130209.mail.mud.yahoo.com> Available is one HP5501A laser head for your GCA units. Power output is 310 Uwatts...90 days warranty as the manufacturer. Let me know Mario A. Portillo Sr. High'born Technology USA Inc. Semiconductor Equipment Services 8130 Glades Road, #229 Boca Raton, FL 33434 561 479-1975 office 561 504-0244 cell hbtusainc at yahoo.com www.hbtusainc.com From philippe.fluckiger at epfl.ch Thu Jul 7 10:18:05 2011 From: philippe.fluckiger at epfl.ch (=?iso-8859-1?Q?Fl=FCckiger_Philippe?=) Date: Thu, 7 Jul 2011 14:18:05 +0000 Subject: [labnetwork] Open position at the EPFL Center of MicroNanoTechnology (CMi) Lausanne Switzerland Message-ID: <4AA894F792D3D64085E82E89F3604131143DE1B5@rexi1.intranet.epfl.ch> Microfabrication Engineer Position description: http://cmi.epfl.ch/EPFL_Microfabrication_Engineer.pdf Dr Philippe Fl?ckiger Director of Operations http://cmi.epfl.ch/ Phone +41 21 693 6695 -------------- next part -------------- An HTML attachment was scrubbed... URL: From R.White at tufts.edu Fri Jul 8 12:45:13 2011 From: R.White at tufts.edu (White, Robert D.) Date: Fri, 8 Jul 2011 16:45:13 +0000 Subject: [labnetwork] Tufts Microfab seeking lab manager Message-ID: Colleagues, The Tufts Micro and Nano Fab opened in 2007, and has been growing over the last few years. We are now in a position to hire a full time technical lab manager. I am excited about this position - if we can find the right person with a mix of energy, collegiality, and skill I think they will have a major impact on growing the capabilities of our lab and executing our educational and research goals. This is a full time staff position in the mechanical engineering department at Tufts (Medford), although the lab serves the entire campus (mostly engineering departments and the chemistry department currently). Applicants should have hands on microfabrication experience, good technical skills to maintain equipment and assist with process development/troubleshooting, the desire to interact with students and postdocs, and a collegial attitude. If that sounds interesting to you I would love to hear from you! Please apply through the official HR site, linked below. If you have questions feel free to contact me directly. I am also posting a link to the Tufts Microfab website below. https://recruiter.kenexa.com/tufts/cc/CCJobDetailAction.ss?command=CCViewDetail&job_REQUISITION_NUMBER=59553&ccid=bupJEdUjsTs%3D http://engineering.tufts.edu/microfab/ All the best, Prof. White http://www.tufts.edu/~rwhite07/ -- Robert D. White Assistant Professor Mechanical Engineering Tufts University 200 College Ave. Medford, MA 02155 (617)627-2210 -------------- next part -------------- An HTML attachment was scrubbed... URL: From rungrot at eecs.berkeley.edu Fri Jul 8 14:03:22 2011 From: rungrot at eecs.berkeley.edu (Rungrot Kitsomboonloha) Date: Fri, 08 Jul 2011 11:03:22 -0700 Subject: [labnetwork] Fwd: wkyo Message-ID: <4E17466A.3000005@eecs.berkeley.edu> Hi, I would like to joint the list-serv about Wyko support. My problem is about development automatic analysis using matlab code based on Wyko database. I saved wyko file in asc format and have problems getting the right height. Please suggest a correction factor. Best Regards, Jack -------- Original Message -------- Subject: wkyo Date: Fri, 08 Jul 2011 08:04:40 -0700 From: Robert M. Hamilton To: Rungrot Kitsomboonloha CC: Bill Flounders , Evan Stateler Jack, You may want to join the following list-serv and write about your problem to: labnetwork at mtl.mit.edu I rec'd good feedback about another WYKO issue from this forum. We also plan to have WYKO service done by this firm. We are waiting for Evan to have the time to schedule and meet with Tony Dao. He is swamped with are final tool move - centura.Tony Dao Direct Advanced Operations 818-288-7908 818-998-8162 Fax a.dao at directadvop-us.com> www.directadvop-us.com Bob H. Robert M. Hamilton Marvel NanoLab University of CA at Berkeley Rm 520 Sutardja Dai Hall Berkeley, CA 94720-1754 bob at eecs.berkeley.edu (e-mail preferred) 510-809-8600 510-325-7557 (Emergencies) On 7/7/2011 4:24 PM, Rungrot Kitsomboonloha wrote: > Hi All, > > I am working developing a software to analysis WYKO data. I save wyko data into asc format using Wyko analysis software. The file give me two data sets, OPD and intensity in a format of x,y,z. I am able to extract x and y correctly. But the z values have some wired values. Does anyone have experience with Wyko data structure or know where I can find it? Any suggestions would be nice. > > Cheers, > Jack -------------- next part -------------- An HTML attachment was scrubbed... URL: From psharris at trilicium.ca Sat Jul 9 09:41:22 2011 From: psharris at trilicium.ca (P. Scott Harris) Date: Sat, 09 Jul 2011 09:41:22 -0400 Subject: [labnetwork] Fwd: wkyo In-Reply-To: <4E17466A.3000005@eecs.berkeley.edu> References: <4E17466A.3000005@eecs.berkeley.edu> Message-ID: <4E185A82.7050202@trilicium.ca> Hi, Surprisingly, a Google search turned up this site at McGill http://ddmal.music.mcgill.ca/wiki/The_Wyko_Vision_ASCII_file_format#Reference with what looks like useful information. A Google search for 'ddmal wyko' turns up other possibly useful links. I'm not sure what the connection is with music, or maybe this isn't relevant, but there you go. On 08/07/2011 2:03 PM, Rungrot Kitsomboonloha wrote: > Hi, > > I would like to joint the list-serv about Wyko support. My problem is about > development automatic analysis using matlab code based on Wyko database. I > saved wyko file in asc format and have problems getting the right height. > Please suggest a correction factor. > > Best Regards, > Jack P. Scott Harris, P.Eng. H&L Associates -------------- next part -------------- An HTML attachment was scrubbed... URL: From matthieu.nannini at mcgill.ca Mon Jul 11 09:27:43 2011 From: matthieu.nannini at mcgill.ca (Matthieu Nannini, Dr.) Date: Mon, 11 Jul 2011 09:27:43 -0400 Subject: [labnetwork] Fwd: wkyo In-Reply-To: <4E185A82.7050202@trilicium.ca> References: <4E17466A.3000005@eecs.berkeley.edu> <4E185A82.7050202@trilicium.ca> Message-ID: For the story, The music department of McGill used a wyko to archive/restore 33rpm records. They finished the project and lucky us, they donated the wyko to the microfab. Cheers ----------------------------------- Matthieu Nannini McGill Nanotools Microfab Manager t: 514 398 3310 c: 514 758 3311 f: 514 398 8434 http://www.mcgill.ca/microfab ------------------------------------ Le 2011-07-09 ? 09:41, P. Scott Harris a ?crit : Hi, Surprisingly, a Google search turned up this site at McGill http://ddmal.music.mcgill.ca/wiki/The_Wyko_Vision_ASCII_file_format#Reference with what looks like useful information. A Google search for 'ddmal wyko' turns up other possibly useful links. I'm not sure what the connection is with music, or maybe this isn't relevant, but there you go. On 08/07/2011 2:03 PM, Rungrot Kitsomboonloha wrote: Hi, I would like to joint the list-serv about Wyko support. My problem is about development automatic analysis using matlab code based on Wyko database. I saved wyko file in asc format and have problems getting the right height. Please suggest a correction factor. Best Regards, Jack P. Scott Harris, P.Eng. H&L Associates From bernard at mtl.mit.edu Mon Jul 11 14:13:53 2011 From: bernard at mtl.mit.edu (Bernard Alamariu) Date: Mon, 11 Jul 2011 14:13:53 -0400 Subject: [labnetwork] Fwd: wkyo In-Reply-To: <4E17466A.3000005@eecs.berkeley.edu> References: <4E17466A.3000005@eecs.berkeley.edu> Message-ID: <4E1B3D61.2080507@mtl.mit.edu> Hi, Attached is the Matlab script to convert the WYKO test output .opd files into the x,y,z matrix data. WYKO provides it. Our students use it intensively, for a long time. =============== I think that if you want to do software automation to analyze the WYKO data on the fly it could be more complicated and slower, than collecting the whole data first, store it into the WYKO database and pass the site files to the Matlab script, etc./ for that last part you can develop something indeed. When you do the WYKO Automatic test on the whole wafer (or large areas), I think you should enable the autofocus capability at each site, to account for the possible wafer bow. Thanks, Bernard On 7/8/11 2:03 PM, Rungrot Kitsomboonloha wrote: > Hi, > > I would like to joint the list-serv about Wyko support. My problem is > about development automatic analysis using matlab code based on Wyko > database. I saved wyko file in asc format and have problems getting > the right height. Please suggest a correction factor. > > Best Regards, > Jack > > -------- Original Message -------- > Subject: wkyo > Date: Fri, 08 Jul 2011 08:04:40 -0700 > From: Robert M. Hamilton > To: Rungrot Kitsomboonloha > CC: Bill Flounders , Evan Stateler > > > > > Jack, > > You may want to join the following list-serv and write about > your problem to: > labnetwork at mtl.mit.edu > I rec'd good feedback about another WYKO issue from this forum. > > We also plan to have WYKO service done by this firm. We are > waiting for Evan to have the time to schedule and meet with > Tony Dao. He is swamped with are final tool move - > centura.Tony Dao > > Direct Advanced Operations > 818-288-7908 > 818-998-8162 Fax > a.dao at directadvop-us.com> > www.directadvop-us.com > > > Bob H. > > > Robert M. Hamilton > Marvel NanoLab > University of CA at Berkeley > Rm 520 Sutardja Dai Hall > Berkeley, CA 94720-1754 > bob at eecs.berkeley.edu > (e-mail preferred) > 510-809-8600 > 510-325-7557 (Emergencies) > > > On 7/7/2011 4:24 PM, Rungrot Kitsomboonloha wrote: > > Hi All, > > > > I am working developing a software to analysis WYKO data. I save wyko data into asc format using Wyko analysis software. The file give me two data sets, OPD and intensity in a format of x,y,z. I am able to extract x and y correctly. But the z values have some wired values. Does anyone have experience with Wyko data structure or know where I can find it? Any suggestions would be nice. > > > > Cheers, > > Jack > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- An embedded and charset-unspecified text was scrubbed... Name: readopd.m URL: From psharris at trilicium.ca Mon Jul 11 12:36:02 2011 From: psharris at trilicium.ca (P. Scott Harris) Date: Mon, 11 Jul 2011 12:36:02 -0400 Subject: [labnetwork] Fwd: wkyo In-Reply-To: References: <4E17466A.3000005@eecs.berkeley.edu> <4E185A82.7050202@trilicium.ca> Message-ID: <4E1B2672.7080105@trilicium.ca> Ok, I just have to say kudos to whoever thought of that solution to the problem. P. Scott Harris, P.Eng. H&L Associates On 11/07/2011 9:27 AM, Matthieu Nannini, Dr. wrote: > For the story, > > The music department of McGill used a wyko to archive/restore 33rpm records. They finished the project and lucky us, they donated the wyko to the microfab. > > Cheers > > ----------------------------------- > Matthieu Nannini > McGill Nanotools Microfab > Manager > t: 514 398 3310 > c: 514 758 3311 > f: 514 398 8434 > http://www.mcgill.ca/microfab > ------------------------------------ > > Le 2011-07-09 ? 09:41, P. Scott Harris a ?crit : > > Hi, > > Surprisingly, a Google search turned up this site at McGill http://ddmal.music.mcgill.ca/wiki/The_Wyko_Vision_ASCII_file_format#Reference with what looks like useful information. A Google search for 'ddmal wyko' turns up other possibly useful links. I'm not sure what the connection is with music, or maybe this isn't relevant, but there you go. > > > On 08/07/2011 2:03 PM, Rungrot Kitsomboonloha wrote: > Hi, > > I would like to joint the list-serv about Wyko support. My problem is about development automatic analysis using matlab code based on Wyko database. I saved wyko file in asc format and have problems getting the right height. Please suggest a correction factor. > > Best Regards, > Jack From philippe.fluckiger at epfl.ch Thu Jul 14 06:56:38 2011 From: philippe.fluckiger at epfl.ch (=?iso-8859-1?Q?Fl=FCckiger_Philippe?=) Date: Thu, 14 Jul 2011 10:56:38 +0000 Subject: [labnetwork] Open positions (2x) at the EPFL Center of MicroNanoTechnology (CMi) Lausanne Switzerland Message-ID: <4AA894F792D3D64085E82E89F3604131143E0948@rexi1.intranet.epfl.ch> 1? EBEAM Lithography Engineer Position description: http://cmi.epfl.ch/EPFL_EBEAM_Lithography_Engineer.pdf 2? Microfabrication Engineer Position description: http://cmi.epfl.ch/EPFL_Microfabrication_Engineer.pdf With my very best regards, Philippe Dr Philippe Fl?ckiger Director of Operations http://cmi.epfl.ch/ Phone +41 21 693 6695 -------------- next part -------------- An HTML attachment was scrubbed... URL: From vincent.luciani at nist.gov Tue Jul 19 14:10:36 2011 From: vincent.luciani at nist.gov (Luciani, Vincent) Date: Tue, 19 Jul 2011 14:10:36 -0400 Subject: [labnetwork] Positions open at NIST CNST NanoFab Message-ID: <01F47D4EDEEC64488C10B767D15E485808F4459E7F@MBCLUSTER.xchange.nist.gov> Hello All, If this is not the proper venue for this let me know and I will cease and desist, but I have 2 positions open that I would like to announce. Both are in our NanoFab Operations Group. 1) NanoFab Process Engineer (Lithography focus) 2) NanoFab FIB/SEM/TEM engineer (FIB focus) Job descriptions are attached. They are also advertised on indeed.com and careerbuilder.com. Anyone interested can send their resume to me directly or through one of the websites. Note that US citizenship is required. Vincent K. Luciani NanoFab Manager Center for Nanoscale Science and Technology National Institute of Standards and Technology 100 Bureau Drive, MS 6201 Gaithersburg, MD 20899-6200 USA +1-301-975-2886 [cid:image002.jpg at 01CC461D.B0BDDAD0] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 3841 bytes Desc: image002.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: NanoFab FIB-SEM Engineer.docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 62047 bytes Desc: NanoFab FIB-SEM Engineer.docx URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Nanofabrication Process Engineer.docx Type: application/vnd.openxmlformats-officedocument.wordprocessingml.document Size: 61261 bytes Desc: Nanofabrication Process Engineer.docx URL: From dcchrist at wisc.edu Wed Jul 20 09:44:19 2011 From: dcchrist at wisc.edu (Daniel C. Christensen) Date: Wed, 20 Jul 2011 08:44:19 -0500 Subject: [labnetwork] Micro Fab Engineer position open at the University of Wisconsin-Madison Message-ID: <7630a5dfd9213.4e269563@wiscmail.wisc.edu> The micro/nano fab at the University of Wisconsin-Madison has an open position for a Process & Fabrication Engineer. The candidate must have a strong background in the theory and practice of Micro and Nano fabrication techniques, equipment and clean room protocols. The positions responsibilities will include, but are not limited to: -maintenance and repair of the fabrication equipment in the clean room, both directly and by working closely with field service engineers. Assist students in all areas of tool use and process design for common WCAM applications (50%) -develop user training programs (including undergraduate classes) and assist in recruiting campus and industrial clients in designing entire device processes in the MEMS and NEMS applications areas. (35%) -work closely with the lead PI groups and the lab manager to indentify research trends and new tools for the fab. Advises researchers, industrial and academic scientists and faculty in developing or acquiring tools and may participate in preparation of grant and contract proposals. (15%) For more information please see the recruitment announcement at: http://www.ohr.wisc.edu/pvl/pv_070992.html For more information about our facility, please visit out web page at: http://www.engr.wisc.edu/centers/wcam/ -- Daniel C Christensen Laboratory Manager Wisconsin Center for Applied Microelectronics University of Wisconsin-Madison dan at engr.wisc.edu From david at sussexsemiconductor.com Tue Jul 26 14:20:16 2011 From: david at sussexsemiconductor.com (David) Date: Tue, 26 Jul 2011 14:20:16 -0400 Subject: [labnetwork] Thermco Message-ID: <008701cc4bc0$ab7c0ee0$02742ca0$@sussexsemiconductor.com> Hi, I have two thermco 4-stack diffusion furnaces, capable of 6" wafers, that we would like to donate. Please email me if interested. I also have some spare LPCVD tubes for 4" wafers, several new in box. Best Regards, David Tibol Sussex Semiconductor, Inc. 12251 Towne Lake Dr Ft Myers, FL 33913 (C) 239-405-2051 (F) 239-768-6868 david at sussexsemiconductor.com -------------- next part -------------- An HTML attachment was scrubbed... URL: From rmorrison at draper.com Wed Jul 27 07:58:40 2011 From: rmorrison at draper.com (Morrison, Richard H., Jr.) Date: Wed, 27 Jul 2011 07:58:40 -0400 Subject: [labnetwork] Need RIE help Message-ID: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> Hi Everyone, Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma. In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean? Does anybody have any ideas on what may be going on. Thanks in advance, Rick Rick Morrison Senior Member Technical Staff Acting Group Leader Mems Fabrication Draper Laboratory 555 Technology Square Cambridge, MA 02139 617-258-3420 -------------- next part -------------- An HTML attachment was scrubbed... URL: From voros at eecs.berkeley.edu Wed Jul 27 14:32:34 2011 From: voros at eecs.berkeley.edu (Katalin VOROS) Date: Wed, 27 Jul 2011 11:32:34 -0700 Subject: [labnetwork] UGIM 2012 Call for Papers Message-ID: <096a61543481f9eca5f530c5a3938a2e@berkeley.edu> CALL FOR PAPERS The goal of this symposium is to bring together educators and researchers involved in micro/nanotechnology laboratory development and management around the world and to provide a forum for exchanging information and presenting new lab operations and educational concepts. Abstract Submission Deadline: 6 February 2012 http://microlab2.eecs.berkeley.edu/UGIM2012 SYMPOSIUM ON OPERATIONS AND MANAGEMENT OF NANOTECHNOLOGY RESEARCH FACILITIES ALL TOPICS INVOLVING MANAGEMENT OF NANOTECHNOLOGY RESEARCH FACILITIES AND ACADEMIC LABORATORIES WILL BE CONSIDERED. PAPERS ARE REQUESTED WITH A FOCUS THAT ADDRESSES THE TOPIC AREA OF ONE OF THE PANELS BELOW. AS THIS 2-DAY SYMPOSIUM IS DEDICATED TO MATTERS OF INTEREST TO UNIVERSITY LABORATORY MANAGEMENT, WE ARE NOT SOLICITING RESEARCH PAPERS. PANEL TOPICS COMMAND, CONTROL, COMMUNICATIONS, UNIVERSITY AND PUBLIC RELATIONS AND COMMUNITY PUBLICATIONS, ELECTRONIC MEDIA LABORATORY MODELS - COLLEGE, DEPARTMENTAL RELATIONS RESEARCH/EDUCATION/SIZE INDUSTRIAL AND INTERNATIONAL METRICS AND BENCHMARKING PAST AND FUTURE OF UGIM STAFFING, TRAINING, CONDUCT, DISCIPLINE COMPUTERS AND ADMINISTRATION EXPANDING LABORATORY DEMANDS ACCESS CONTROL, 24/7 OPERATION COMPATIBILITY/CONTAMINATION MATERIALS MANAGEMENT FACILITIES MANAGEMENT INFORMATION MANAGEMENT UTILITIES RESPONSIBILITIES DOCUMENTATION, RETAINING KNOWLEDGE SPACE AND UTILITIES MANAGEMENT COMPUTERIZED ACCESS MAINTENANCE SAFETY AND EMERGENCY RESPONSE PLANNING AND DEVELOPMENT SHOULD YOU HAVE A LAB; WHAT KIND? EQUIPMENT MANAGEMENT SHORT, MEDIUM AND LONG RANGE GOALS SERVICE MODELS, PRIORITIES, CONTRACTS NETWORKING MODELS PREVENTIVE MAINT., DECOMMISSIONING INTERNATIONAL MODELS CAPABILITY DEVELOPMENT COMPUTERIZED ACCESS FINANCES RECHARGE MODELS, CAPS INCOME STREAMS AND SUBSIDIES EQUIPMENT ACQUISITION, FUNDING EXPENSES AND DEPRECIATION -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Wed Jul 27 19:39:11 2011 From: mtang at stanford.edu (Mary Tang) Date: Wed, 27 Jul 2011 16:39:11 -0700 Subject: [labnetwork] Need RIE help In-Reply-To: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> References: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> Message-ID: <4E30A19F.5000506@stanford.edu> Hi Richard -- A similar problem was observed and diagnosed on one of our O2 ashers by one of our industrial labmembers who was a plasma etch engineer at HP. The cause seems to have been trace amounts Fomblin pump fluid coming back into the chamber -- Fomblin is basically a polymerized freon, so there's your fluorine source. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote: > > Hi Everyone, > > Our facility uses an STS RIE tool (100mm wafers), to etch > Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use > O2 to clean off resist from wafers. It seems that just running O2 > plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 > with O2 plasma. > > In trouble shooting we have done the following, change the Teflon > wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the > lines, then pumped the machine down and just ran O2 and we still > etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is > clipped of in height during the O2 plasma clean? > > Does anybody have any ideas on what may be going on. > > Thanks in advance, > > Rick > > Rick Morrison > > Senior Member Technical Staff > > Acting Group Leader Mems Fabrication > > Draper Laboratory > > 555 Technology Square > > Cambridge, MA 02139 > > 617-258-3420 > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From voros at eecs.berkeley.edu Wed Jul 27 20:12:14 2011 From: voros at eecs.berkeley.edu (Katalin VOROS) Date: Wed, 27 Jul 2011 17:12:14 -0700 Subject: [labnetwork] Fwd: SEMICON West 2011 Recap and Highlights Message-ID: Please note that we timed the 2012 UGIM Symposium, 9-10 July, such that you will be able to combine your trip with visiting Semicon West next year. Here is a report on how the show went this year. Sincerely Katalin Voros -------- Original Message -------- SEMICON West 2011 Recap and Highlights Wed, 27 Jul 2011 14:45:37 -0700 "SEMICON West 2011" voros at eecs.berkeley.edu marketingservices at semi.org [1] SEMICON WEST 2011 IN REVIEW: WHAT A WEEK IT WAS! People are still buzzing about SEMICON West 2011 and with good reason! This year's show featured more people, more companies, and more information on today's critical issues in microelectronics design and manufacturing. Highlights include: * 31,000 attendees* (+5% from 2010) * 64 countries represented * 746 Exhibiting companies * 1277 booths * Standing room-only crowds for technical sessions on 450mm, 3D IC, emerging architectures, design, contemporary packaging, test, HB-LEDs, MEMS, and more Mark your calendar now for SEMICON West 2012, July 10-12, 2012, Moscone Center, San Francisco! *Includes SEMICON West and Intersolar North America attendees ------------------------- BEST OF WEST 2011 Congratulations to SigmaTech--winner of the 2011 Best of West Award (presented by Solid State Technology Magazine and SEMI)--and to our Best of West finalists CyberOptics Semiconductor and MonolithIC 3D! For more information on the Best of West winner and finalists, please visit: www.semiconwest.org/Participate/BestofWest [2] ------------------------- PRESENTATIONS AVAILABLE ONLINE There's still time to catch-up on what you saw and what you might have missed--select keynote and technical presentations are now available on the SEMICON West website: www.semiconwest.org [3]. KEYNOTES TIEN WU, ASE _The New Dynamics of Semiconductor Business [4]_ RAMA K SHUKLA, INTEL CORPORATION _The New Age of Computing Continuum Experience [5]_ LUC VAN DEN HOVE, IMEC _Semiconductor, Core of a Sustainable Amazing World [6]_ TECHXPOT SESSIONS WAFER PROCESSING _Emerging Architectures for Logic and Memory [7]_ _More than Moore & Productivity [8]_ _Advanced Lithography [9]_ _450mm Wafer Transition Forum [10]_ 3D IC/PACKAGING _Heterogeneous Integration of MEMS and Sensors [11]_ _3D in the Deep Submicron Era [12]_ _Contemporary Packaging: Challenges and Solutions for 40nm and Beyond [13]_ TEST _Test in Transition: Changing Customer Requirements [14]_ _Test in Transition: Emerging Test Solutions and Technologies [15]_ DESIGN _Enabling Advanced Technology Prototype/Pilot Design and Manufacturing [16]_ EXTREME ELECTRONICS LED: _More Lumens per Dollar: Issues and Answers to Bring Costs Down to Create a General Lighting Market [17]_ MEMS: _The Future of MEMS: Solutions for Moving from a Niche to a Mainstream Business [18]_ Energy: _Energy: Opportunities in Smart Power Management for Alternative Energy Applications [19]_ Printed: _Printed/Flexible Electronics: Beyond R please visit the SEMICON West website for future updates and information. ------------------------- SEMICON WEST DAILY NEWS Tuesday, July 12 Wednesday, July 13 Thursday, July 14 ------------------------- SEMICON WEST 2011 EXHIBITOR DIRECTORY You can still search and connect to exhibitors from SEMICON West 2011 through the SEMICON West 2011 Exhibitor Directory [22] ------------------------- ATTENTION EXHIBITORS: BOOK YOUR SPACE NOW FOR SEMICON WEST 2012 SEMICON West 2012 is already 75% sold--if you missed this year's show or if you haven't already booked space, plan now to be a part of SEMICON West 2012! 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URL: From mtiner at masdar.ac.ae Thu Jul 28 08:06:56 2011 From: mtiner at masdar.ac.ae (Mike Tiner) Date: Thu, 28 Jul 2011 16:06:56 +0400 Subject: [labnetwork] Need RIE help In-Reply-To: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> References: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> Message-ID: Hi Rick, I had a similar issue on a different brand of plasma system in the past. The rough pump valve had received some damage to the o-ring seal and even though it was closed, the fault allowed the system to bleed foreline atmosphere back into the chamber. As foreline is still relatively low pressure it did not fault for high chamber pressure, but we did get fomblin into the chamber during processing. Hope this helps, Regards, Mike Mike Tiner Manager, Fabrication and Microscopy Facilities [cid:image001.jpg at 01CC4D40.39273BE0] PO Box 54224, Khalifa City Abu Dhabi, United Arab Emirates Office +971 2 810 8122 Direct +971 2 810 9053 Fax +971 2 810 8121 Mobile +971 56 733 9604 Email mtiner at masdar.ac.ae http://www.masdar.ac.ae P Please consider the environment before printing this email This transmission is confidential and intended solely for the person or organization to whom it is addressed. It may contain privileged and confidential information. If you are not the intended recipient, you should not copy, distribute or take any action in reliance on it. If you have received this transmission in error, please notify us immediately by e-mail at info at masdar.ac.ae From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr. Sent: Wednesday, July 27, 2011 3:59 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Need RIE help Hi Everyone, Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma. In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean? Does anybody have any ideas on what may be going on. Thanks in advance, Rick Rick Morrison Senior Member Technical Staff Acting Group Leader Mems Fabrication Draper Laboratory 555 Technology Square Cambridge, MA 02139 617-258-3420 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 5411 bytes Desc: image001.jpg URL: From Hathaway at cns.fas.harvard.edu Fri Jul 29 09:44:33 2011 From: Hathaway at cns.fas.harvard.edu (Mac Hathaway) Date: Fri, 29 Jul 2011 09:44:33 -0400 Subject: [labnetwork] Need RIE help In-Reply-To: <4E30A19F.5000506@stanford.edu> References: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> <4E30A19F.5000506@stanford.edu> Message-ID: <4E32B941.8080502@cns.fas.harvard.edu> Hey all, This is Mac, at Harvard CNS. Our STS has shown some symptoms of this due to polymer on the walls coming off in the O2 clean, introducing fluorine via that route. When you wrote "the F peak is clipped of in height during the O2 plasma clean?" Did you mean it was still there, but shorter? This would clearly indicate the F is still there, and the only question is where it's coming from. Perhaps a longer chamber clean, with a low-pressure step to spread out the cleaning plasma, before the stripping runs?... Keep in mind that an O2 resist strip can gum up your chamber, and cause instability in your regular etch processes if you're not careful. Mac Mary Tang wrote: > Hi Richard -- > > A similar problem was observed and diagnosed on one of our O2 ashers > by one of our industrial labmembers who was a plasma etch engineer at > HP. The cause seems to have been trace amounts Fomblin pump fluid > coming back into the chamber -- Fomblin is basically a polymerized > freon, so there's your fluorine source. > > Mary > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > Paul G. Allen Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote: >> >> Hi Everyone, >> >> >> >> Our facility uses an STS RIE tool (100mm wafers), to etch >> Nitrides/Oxides/Ti and resist cleans. I have a big problem when we >> use O2 to clean off resist from wafers. It seems that just running O2 >> plasma we etch 1000A/min of SiO2. It should be impossible to etch >> SiO2 with O2 plasma. >> >> >> >> In trouble shooting we have done the following, change the Teflon >> wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the >> lines, then pumped the machine down and just ran O2 and we still >> etched the SiO2 at 1000A/min. We have a plasma scope and the F peak >> is clipped of in height during the O2 plasma clean? >> >> >> >> Does anybody have any ideas on what may be going on. >> >> >> >> Thanks in advance, >> >> Rick >> >> >> >> >> >> >> >> >> >> Rick Morrison >> >> Senior Member Technical Staff >> >> Acting Group Leader Mems Fabrication >> >> Draper Laboratory >> >> 555 Technology Square >> >> Cambridge, MA 02139 >> >> >> >> 617-258-3420 >> >> >> >> >> _______________________________________________ >> labnetwork mailing list >> labnetwork at mtl.mit.edu >> https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork >> > -------------- next part -------------- An HTML attachment was scrubbed... URL: From rmorrison at draper.com Fri Jul 29 10:47:18 2011 From: rmorrison at draper.com (Morrison, Richard H., Jr.) Date: Fri, 29 Jul 2011 10:47:18 -0400 Subject: [labnetwork] Need RIE help In-Reply-To: <4E32B941.8080502@cns.fas.harvard.edu> References: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> <4E30A19F.5000506@stanford.edu> <4E32B941.8080502@cns.fas.harvard.edu> Message-ID: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA046D3155@exchbk1.draper.com> Well that is great info, Here are my results so far, thanks to all whom have wrote replies: Removed the Teflon ring and the F peak on the plasma scope reduced by about 30%, the ring shows heavy etch damage, according to STS it is needed in the system to help confine the plasma We found out that the "o"-ring that seals the chamber cover is greased with fomblin grease, changing that out today, data to come. We will swap out the dry pump for a new one to see if we have an oil back-stream issue due to a bad seal. One stage on the dry pump uses Fomblin oil. All of you have suggested very long O2 cleans so we are going to try that after the grease and pump change. We are also going to increase the O2 flow to 125sccm from 50sccm, increase the pressure to 250mT and increase the power. Any more ideas out there? Rick From: Mac Hathaway [mailto:Hathaway at cns.fas.harvard.edu] Sent: Friday, July 29, 2011 9:45 AM To: Mary Tang Cc: Morrison, Richard H., Jr.; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Need RIE help Hey all, This is Mac, at Harvard CNS. Our STS has shown some symptoms of this due to polymer on the walls coming off in the O2 clean, introducing fluorine via that route. When you wrote "the F peak is clipped of in height during the O2 plasma clean?" Did you mean it was still there, but shorter? This would clearly indicate the F is still there, and the only question is where it's coming from. Perhaps a longer chamber clean, with a low-pressure step to spread out the cleaning plasma, before the stripping runs?... Keep in mind that an O2 resist strip can gum up your chamber, and cause instability in your regular etch processes if you're not careful. Mac Mary Tang wrote: Hi Richard -- A similar problem was observed and diagnosed on one of our O2 ashers by one of our industrial labmembers who was a plasma etch engineer at HP. The cause seems to have been trace amounts Fomblin pump fluid coming back into the chamber -- Fomblin is basically a polymerized freon, so there's your fluorine source. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote: Hi Everyone, Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma. In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean? Does anybody have any ideas on what may be going on. Thanks in advance, Rick Rick Morrison Senior Member Technical Staff Acting Group Leader Mems Fabrication Draper Laboratory 555 Technology Square Cambridge, MA 02139 617-258-3420 _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From agregg at abbiegregg.com Fri Jul 29 15:38:01 2011 From: agregg at abbiegregg.com (Abbie Gregg) Date: Fri, 29 Jul 2011 15:38:01 -0400 Subject: [labnetwork] Need RIE help In-Reply-To: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA046D3155@exchbk1.draper.com> References: <94CDEF5D18F0BB4A85B1D78EFBDD6FDA0469538B@exchbk1.draper.com> <4E30A19F.5000506@stanford.edu> <4E32B941.8080502@cns.fas.harvard.edu> <94CDEF5D18F0BB4A85B1D78EFBDD6FDA046D3155@exchbk1.draper.com> Message-ID: <5863FB4055D90542A7A7DAE0CEF2ACB00650C39C42@E2K7CCR1.netvigour.com> Fluorine poisoning is really the culprit here. In the email I read, they used the RIE tool for nitride etch and then ran a resist strip process. Nitride etch will usually have F based gases. F based chemistries and O2 based chemistries (for resist strip) can not mix in the same chamber. Here are 2 real experience I had: LAM An early Lam tool, the Rainbow 4400 was released for poly, Wsi, nitride and W plug etch processes. However, we found that when mixing etch applications in the same chamber the oxide etch rates exponentially increase. -F based etch step then HBr/O2 over etch step always showed 20 to 1 selectivity of polysilicon to oxide -Cl2 based etch step then an HBr/O2 over etch step showed 100: 1 selectivity of polysilicon to oxide We also battled mixed chemistry issues in the early days at TSMC and Chartered. The early versions of these foundries would only buy a few etch tools and then use multiple processes in the same chamber. -Poly etch was usually, Cl2+He in the main etch and HBr/O2 in the over etch. HBr/O2 had a 100:1 selectivity of Poly to oxide and will only etch oxide for around 5 Angstroms per minute. -Nitride etch was usually SF6 or CF4 or C2F6 based plasma -W plug process was usually SF6 based plasma If we had to use F in the same chamber as a poly etch tool,( as in the native oxide punch through step at the beginning of any poly etch), we will only use F sources very small flows and for 10 seconds or less. Then , we will follow it with a pump/purge step within the process run so we immediately flush any F out of the chamber. If we did have F poisoning, we found that in addition to doing a complete chamber wet clean, we also needed to remove all parts that were not hard anodized aluminum, wet clean these, air dry, then bake in the oven for 45 minutes. After that, we needed to season the chamber using an O2 only process. Obviously, this process was not production worthy so we ended up dedicating chambers to specific chemistries only and never had the issue again. Later on, Lam released 2 additional tools...the 4420 which is for silicides and the 4700 which is for plugs and trenches. This ensured that we did not mix chemistries anymore. In fact, if we found that any customer ran a F chemistry on another chamber that would require high selectivity to oxide and then call us to escalate the issue due to oxide punch through, we would void the warranty for a few months and not support the tool. However, if they had some F poisoning due to back streaming Fomblin, this is easy to check and we will support the tool. All you need to do is disconnect the last segment of pump foreline closest to the chamber. If you can wipe a colorless, oily substance, then or small, white, sticky gunk, your oil backstreamed into the chamber. Mattson The Mattson tools dry strip tools had the same problem with F. The Mattson tools, however are NOT RIE tools, they are downstream ICP plasma tools. An O2 only process was the POR for resist for those tools. Each time we switched the applications lab tools to CF4 + O2 chemistry to strip post implant resist, we poisoned the chamber after just 2 wafer runs. That process was even predominantly O2. (Flow was 3000 sccm O2 + 10 sccm CF4) We just needed a little fluorine to punch through the cross linked layer of the photoresist that was hardened by the implant process. After running just 2 wafer runs and then switch to a pure O2 process, we were surprised that we literally punched through the 500 Angstroms of oxide underlayer. We only had 2 apps lab test tools during Mattson's early days so we did not have the luxury of dedicating chambers. We would constantly change the configuration of those tools and prep them every night if these tools had to switch chemistries (F chemistries vs O2 only). After a F poisoning (usually done on purpose in our applications lab, so we can strip post implant resist) , we used to open the chambers, wet clean / wipe with isopropyl alcohol and acetone mix. We also remove anything that is not hard anodized aluminum, wet clean these parts, air dry and bake them in the oven. Then, we would run 6 hours of O2 and Nitrogen plasma cleans, as an added chamber conditioning step. As we increased the number of application lab tools, we also dedicated chemistries to specific tools and never had to go through those long nights in between experiments anymore due to F poisoning. Lastly, if the STS tool is the only tool to do these experiments in a university research atmosphere, this tool will need to run a lot of O2 only processes for conditioning, before any resist strip experiments can be done. or Do chamber wipe downs (at the very minimum) + a quick O2 plasma clean before switching to a resist strip process. I hope this helps. Ciel Villawatkins | Sr. Technical Staff Abbie Gregg, Inc. | 1130 East University Drive, Suite 105, Tempe, AZ 85281 Main 480-446-8000 | Fax 480-446-8001 | US Mobile 480 735 9547 Abu Dhabi Mobile +971(0)56 772 9531 Email cvillawatkins at abbiegregg.com | Web www.abbiegregg.com Abbie Gregg President Abbie Gregg, Inc. 1130 East University Drive, Suite 105 Tempe, Arizona 85281 Phone 480 446-8000 x 107 Cell 480-577-5083 FAX 480-446-8001 email agregg at abbiegregg.com website www.abbiegregg.com CONFIDENTIALITY NOTICE: All information contained in or attached to this email constitutes confidential information belonging to Abbie Gregg, Inc., its affiliates and subsidiaries and/or its clients. This email and any attachments are proprietary and/or confidential and are intended for business use of the addressee(s) only. All other uses or disclosures are strictly prohibited. If the reader is not the intended recipient you are hereby notified that the perusal, copying or dissemination of this email is strictly prohibited. If you have received this communication in error, please notify the sender, and delete all copies of this message and its attachments immediately. From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr. Sent: Friday, July 29, 2011 7:47 AM To: Mac Hathaway; Mary Tang Cc: labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Need RIE help Well that is great info, Here are my results so far, thanks to all whom have wrote replies: Removed the Teflon ring and the F peak on the plasma scope reduced by about 30%, the ring shows heavy etch damage, according to STS it is needed in the system to help confine the plasma We found out that the "o"-ring that seals the chamber cover is greased with fomblin grease, changing that out today, data to come. We will swap out the dry pump for a new one to see if we have an oil back-stream issue due to a bad seal. One stage on the dry pump uses Fomblin oil. All of you have suggested very long O2 cleans so we are going to try that after the grease and pump change. We are also going to increase the O2 flow to 125sccm from 50sccm, increase the pressure to 250mT and increase the power. Any more ideas out there? Rick From: Mac Hathaway [mailto:Hathaway at cns.fas.harvard.edu] Sent: Friday, July 29, 2011 9:45 AM To: Mary Tang Cc: Morrison, Richard H., Jr.; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Need RIE help Hey all, This is Mac, at Harvard CNS. Our STS has shown some symptoms of this due to polymer on the walls coming off in the O2 clean, introducing fluorine via that route. When you wrote "the F peak is clipped of in height during the O2 plasma clean?" Did you mean it was still there, but shorter? This would clearly indicate the F is still there, and the only question is where it's coming from. Perhaps a longer chamber clean, with a low-pressure step to spread out the cleaning plasma, before the stripping runs?... Keep in mind that an O2 resist strip can gum up your chamber, and cause instability in your regular etch processes if you're not careful. Mac Mary Tang wrote: Hi Richard -- A similar problem was observed and diagnosed on one of our O2 ashers by one of our industrial labmembers who was a plasma etch engineer at HP. The cause seems to have been trace amounts Fomblin pump fluid coming back into the chamber -- Fomblin is basically a polymerized freon, so there's your fluorine source. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote: Hi Everyone, Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma. In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean? Does anybody have any ideas on what may be going on. Thanks in advance, Rick Rick Morrison Senior Member Technical Staff Acting Group Leader Mems Fabrication Draper Laboratory 555 Technology Square Cambridge, MA 02139 617-258-3420 _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From mcvittie at stanford.edu Sat Jul 30 16:30:09 2011 From: mcvittie at stanford.edu (James P McVittie) Date: Sat, 30 Jul 2011 13:30:09 -0700 (PDT) Subject: [labnetwork] Need RIE help In-Reply-To: <5863FB4055D90542A7A7DAE0CEF2ACB00650C39C42@E2K7CCR1.netvigour.com> Message-ID: <9223398.393105.1312057808964.JavaMail.root@zm06.stanford.edu> Hi, I would like to point out that carbon from resist also plays a role in oxide etching in HBr and Cl2 plasmas. This is why a small flow of O2 is added to HBr during the overetch step in poly-Si etching. Without the O2 addition, you will not get the very high (100:1) oxide selectivity seen in HBr/O2. I believe this was first shown in detail by a group from Fujitsu in the late 80s. Jim James (Jim) P. McVittie, Ph.D. Sr. Research Scientist Paul G. Allen Building Electrical Engineering Stanford Nanofabrication Facility jmcvittie at stanford.edu Stanford University Office: (650) 725-3640 ----- Original Message ----- From: "Abbie Gregg" To: "Richard H. Morrison, Jr." , "Mac Hathaway" , "Mary Tang" Cc: labnetwork at mtl.mit.edu, "Ciel Villawatkins" Sent: Friday, July 29, 2011 12:38:01 PM Subject: Re: [labnetwork] Need RIE help Fluorine poisoning is really the culprit here. In the email I read, they used the RIE tool for nitride etch and then ran a resist strip process . Nitride etch will usually have F based gases. F based chemistries and O2 based chemistries (for resist strip) can not mix in the same chamber. Here are 2 real experience I had: LAM An early Lam tool, the Rainbow 4400 was released for poly, Wsi, nitride and W plug etch processes. However, we found that when mixing etch applications in the same chamber the oxide etch rates exponentially increase. -F based etch step then HBr/O2 over etch step always showed 20 to 1 selectivity of polysilicon to oxide -Cl2 based etch step then an HBr/O2 over etch step showed 100: 1 selectivity of polysilicon to oxide We also battled mixed chemistry issues in the early days at TSMC and Chartered. The early versions of these foundries would only buy a few etch tools and then use multiple processes in the same chamber. -Poly etch was usually, Cl2+He in the main etch and HBr/O2 in the over etch. HBr/O2 had a 100:1 selectivity of Poly to oxide and will only etch oxide for around 5 Angstroms per minute. -Nitride etch was usually SF6 or CF4 or C2F6 based plasma -W plug process was usually SF6 based plasma If we had to use F in the same chamber as a poly etch tool,( as in the native oxide punch through step at the beginning of any poly etch), we will only use F sources very small flows and for 10 seconds or less. Then , we will follow it with a pump/purge step within the process run so we immediately flush any F out of the chamber. If we did have F poisoning, we found that in addition to doing a complete chamber wet clean, we also needed to remove all parts that were not hard anodized aluminum, wet clean these, air dry, then bake in the oven for 45 minutes. After that, we needed to season the chamber using an O2 only process. Obviously, this process was not production worthy so we ended up dedicating chambers to specific chemistries only and never had the issue again. Later on, Lam released 2 additional tools?the 4420 which is for silicides and the 4700 which is for plugs and trenches. This ensured that we did not mix chemistries anymore. In fact, if we found that any customer ran a F chemistry on another chamber that would require high selectivity to oxide and then call us to escalate the issue due to oxide punch through, we would void the warranty for a few months and not support the tool. However, if they had some F poisoning due to back streaming Fomblin, this is easy to check and we will support the tool. All you need to do is disconnect the last segment of pump foreline closest to the chamber. If you can wipe a colorless, oily substance, then or small, white, sticky gunk, your oil backstreamed into the chamber. Mattson The Mattson tools dry strip tools had the same problem with F. The Mattson tools, however are NOT RIE tools, they are downstream ICP plasma tools. An O2 only process was the POR for resist for those tools. Each time we switched the applications lab tools to CF4 + O2 chemistry to strip post implant resist, we poisoned the chamber after just 2 wafer runs . That process was even predominantly O2. (Flow was 3000 sccm O2 + 10 sccm CF4) We just needed a little fluorine to punch through the cross linked layer of the photoresist that was hardened by the implant process. After running just 2 wafer runs and then switch to a pure O2 process, we were surprised that we literally punched through the 500 Angstroms of oxide underlayer. We only had 2 apps lab test tools during Mattson?s early days so we did not have the luxury of dedicating chambers. We would constantly change the configuration of those tools and prep them every night if these tools had to switch chemistries (F chemistries vs O2 only). After a F poisoning (usually done on purpose in our applications lab, so we can strip post implant resist) , we used to open the chambers, wet clean / wipe with isopropyl alcohol and acetone mix. We also remove anything that is not hard anodized aluminum, wet clean these parts, air dry and bake them in the oven. Then, we would run 6 hours of O2 and Nitrogen plasma cleans, as an added chamber conditioning step. As we increased the number of application lab tools, we also dedicated chemistries to specific tools and never had to go through those long nights in between experiments anymore due to F poisoning. Lastly, if the STS tool is the only tool to do these experiments in a university research atmosphere, this tool will need to run a lot of O2 only processes for conditioning, before any resist strip experiments can be done. or Do chamber wipe downs (at the very minimum) + a quick O2 plasma clean before switching to a resist strip process. I hope this helps. Ciel Villawatkins | Sr. Technical Staff Abbie Gregg, Inc. | 1130 East University Drive, Suite 105, Tempe, AZ 85281 Main 480-446-8000 | Fax 480-446-8001 | US Mobile 480 735 9547 Abu Dhabi Mobile +971(0)56 772 9531 Email cvillawatkins at abbiegregg.com | Web The MTL Mail Server has detected a possible fraud attempt from "exchange1.netvigour.com" claiming to be www.abbiegregg.com Abbie Gregg President Abbie Gregg, Inc. 1130 East University Drive, Suite 105 Tempe, Arizona 85281 Phone 480 446-8000 x 107 Cell 480-577-5083 FAX 480-446-8001 email agregg at abbiegregg.com website www.abbiegregg.com CONFIDENTIALITY NOTICE: All information contained in or attached to this email constitutes confidential information belonging to Abbie Gregg, Inc., its affiliates and subsidiaries and/or its clients. This email and any attachments are proprietary and/or confidential and are intended for business use of the addressee(s) only. All other uses or disclosures are strictly prohibited. If the reader is not the intended recipient you are hereby notified that the perusal, copying or dissemination of this email is strictly prohibited. If you have received this communication in error, please notify the sender, and delete all copies of this message and its attachments immediately . From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr. Sent: Friday, July 29, 2011 7:47 AM To: Mac Hathaway; Mary Tang Cc: labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Need RIE help Well that is great info, Here are my results so far, thanks to all whom have wrote replies: Removed the Teflon ring and the F peak on the plasma scope reduced by about 30%, the ring shows heavy etch damage, according to STS it is needed in the system to help confine the plasma We found out that the ?o?-ring that seals the chamber cover is greased with fomblin grease, changing that out today, data to come. We will swap out the dry pump for a new one to see if we have an oil back-stream issue due to a bad seal. One stage on the dry pump uses Fomblin oil. All of you have suggested very long O2 cleans so we are going to try that after the grease and pump change. We are also going to increase the O2 flow to 125sccm from 50sccm, increase the pressure to 250mT and increase the power. Any more ideas out there? Rick From: Mac Hathaway [mailto:Hathaway at cns.fas.harvard.edu] Sent: Friday, July 29, 2011 9:45 AM To: Mary Tang Cc: Morrison, Richard H., Jr.; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Need RIE help Hey all, This is Mac, at Harvard CNS. Our STS has shown some symptoms of this due to polymer on the walls coming off in the O2 clean, introducing fluorine via that route. When you wrote "the F peak is clipped of in height during the O2 plasma clean?" Did you mean it was still there, but shorter? This would clearly indicate the F is still there, and the only question is where it's coming from. Perhaps a longer chamber clean, with a low-pressure step to spread out the cleaning plasma, before the stripping runs?... Keep in mind that an O2 resist strip can gum up your chamber, and cause instability in your regular etch processes if you're not careful. Mac Mary Tang wrote: Hi Richard -- A similar problem was observed and diagnosed on one of our O2 ashers by one of our industrial labmembers who was a plasma etch engineer at HP. The cause seems to have been trace amounts Fomblin pump fluid coming back into the chamber -- Fomblin is basically a polymerized freon, so there's your fluorine source. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA? 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu On 7/27/2011 4:58 AM, Morrison, Richard H., Jr. wrote: Hi Everyone, Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma. In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean? Does anybody have any ideas on what may be going on. Thanks in advance, Rick Rick Morrison Senior Member Technical Staff Acting Group Leader Mems Fabrication Draper Laboratory 555 Technology Square Cambridge, MA 02139 617-258-3420 _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork