[labnetwork] Need RIE help

[Mike Tiner]

Hi Rick,

I had a similar issue on a different brand of plasma system in the past. The rough pump valve had received some damage to the o-ring seal and even though it was closed, the fault allowed the system to bleed foreline atmosphere back into the chamber. As foreline is still relatively low pressure it did not fault for high chamber pressure, but we did get fomblin into the chamber during processing.

Hope this helps,

Regards,

Mike

Mike Tiner
Manager, Fabrication and Microscopy Facilities

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From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr.
Sent: Wednesday, July 27, 2011 3:59 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Need RIE help

Hi Everyone,

Our facility uses an STS RIE tool (100mm wafers), to etch Nitrides/Oxides/Ti and resist cleans. I have a big problem when we use O2 to clean off resist from wafers. It seems that just running O2 plasma we etch 1000A/min of SiO2. It should be impossible to etch SiO2 with O2 plasma.

In trouble shooting we have done the following, change the Teflon wafer holder, disconnected the SF6, CF4 and CHF3 tanks and capped the lines, then pumped the machine down and just ran O2 and we still etched the SiO2 at 1000A/min. We have a plasma scope and the F peak is clipped of in height during the O2 plasma clean?

Does anybody have any ideas on what may be going on.

Thanks in advance,
Rick




Rick Morrison
Senior Member Technical  Staff
Acting Group Leader Mems Fabrication
Draper Laboratory
555 Technology Square
Cambridge, MA  02139

617-258-3420

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