[labnetwork] Si RIE etch

[Stuart Pearce]

Hi,

I would look at an increase in the O2 flow first without changing any of the other parameters.  The Si etch rate would be dependent on the F radical intensity in the CF4/O2 plasma. Give it a go and see what happens.

Best Regards,

Stuart

________________________________
Dr Stuart Pearce
Senior Process Engineer and Cleanroom Manager

华为技术有限公司 Huawei Technologies (UK) Co., Ltd
[cid:image001.jpg at 01D1B042.F1D20CA0]

Phone: +44 147 366 3153
Email: stuart.pearce at huawei.com<mailto:stuart.pearce at huawei.com?subject=Email%20Query>
Web:  http://www.huawei.com<http://www.huawei.com/>
Web:  http://www.ciphotonics.com

CIP Technologies is the trading name of The Centre for Integrated Photonics Ltd., a wholly owned subsidiary of Huawei Technologies (UK) Co., Ltd.
Registered Office: - Phoenix House, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE.
Registered in England no. 4905488
________________________________
本邮件及其附件含有华为公司的保密信息，仅限于发送给上面地址中列出的个人或群组。禁
止任何其他人以任何形式使用（包括但不限于全部或部分地泄露、复制、或散发）本邮件中
的信息。如果您错收了本邮件，请您立即电话或邮件通知发件人并删除本邮件！
This e-mail and its attachments contain confidential information from HUAWEI, which is intended only for the person or entity whose address is listed above. Any use of the information contained herein in any way (including, but not limited to, total or partial  disclosure, reproduction, or dissemination) by persons other than the intended recipient(s) is prohibited. If you receive this e-mail in error, please notify the sender by phone or email immediately and delete it!



From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Jugessur, Aju S
Sent: 07 March 2017 18:15
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Si RIE etch

Hi,

I have a user who is using the following Si etch recipe on our Oxford NGP80 etcher:

RF power: 100 W
Pressure: 100 mT
CF4 flow rate: 25 sccm
O2 flow rate: 3.1 sccm

The etch rate from the above parameters is ~ 0.15 microns/min.
The selectivity is 1:3.
 Can anyone suggest what parameters to tweak to increase the etch rate without causing too much substrate damage or roughness?

Thanks for your suggestions.

Regards
Aju

Aju Jugessur Ph.D.
Director, University of Iowa Microfabrication Facility
Professor (Adj.), Physics and Astronomy
OSTC, Iowa Advanced Technology Labs
University of Iowa

205 N. Madison St
Iowa City, IA 52242
319 -353-2342
aju-jugessur at uiowa.edu<mailto:aju-jugessur at uiowa.edu>
http://ostc.uiowa.edu/uimf


-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20170308/30fb3897/attachment.html>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: image002.jpg
Type: image/jpeg
Size: 2827 bytes
Desc: image002.jpg
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20170308/30fb3897/attachment.jpg>