From Vincent.Luciani at nist.gov Mon Nov 13 14:44:28 2017 From: Vincent.Luciani at nist.gov (Luciani, Vincent (Fed)) Date: Mon, 13 Nov 2017 19:44:28 +0000 Subject: [labnetwork] Opportunity at the NIST CNST NanoFab Message-ID: Hello Everyone, In the near future I hope to post an opening for an experienced Process Engineer. We are looking for someone who has a wide scope of hands-on nanofabrication experience and especially recent hands-on experience with RIE process development. Resumes can be sent directly to Jessie or me. The ad is pictured below and attached as a PDF. Many thanks, Vince Vincent K. Luciani NanoFab Manager Center for Nanoscale Science and Technology National Institute of Standards and Technology 100 Bureau Drive, MS 6201 Gaithersburg, MD 20899-6200 USA +1-301-975-2886 Nanofabrication Process Engineer US Citizenship Required The Center for Nanoscale Science and Technology (CNST) at the National Institute of Standards and Technology (NIST) in Gaithersburg, MD is seeking expressions of interest for a Nanofabrication Process Engineer. About Us The Center for Nanoscale Science and Technology (CNST), NIST's nanotechnology user facility, supports the U.S. nanotechnology enterprise from discovery to production by providing industry, academia, NIST, and other government agencies with access to world-class nanoscale measurement and fabrication methods and technology. For additional information about the CNST, please visit http://www.nist.gov/cnst. Anticipated Employment Opportunity We anticipate that, in 2017, there will be an opportunity for the right candidate to join the CNST in advancing the field of nanotechnology at one of the country's foremost nanotechnology user facilities. Now, we are seeking expressions of interest from individuals with significant hands-on experience in reactive ion etch (RIE) process development experience and broad experience in micro-/nano- fabrication in general. This position would be responsible for multiple reactive ion etch tools as well as other processing and metrology tools within the facility. Responsibilities would include developing and maintaining process benchmarks, providing training to users on the process tools, assisting users in designing various micro- and nano- devices, and developing their associated processes. Skills Required The position will require extensive hands-on experience in the nanofabrication process development, especially in reactive ion etching (RIE), thin film growth and furnace based processes for high quality thin-film growth. The successful candidate must be familiar with statistical process control (SPC) and have experience with design of experiments (DOE). The ability to author process documentation and training material is also required. In addition, the candidate must be proficient in MS Office applications and general computer use. Good communication skills, the ability to work with a wide range of users, and an enthusiasm for working on multiple projects simultaneously are very important. The successful candidate will have at least ten years of experience with nano-/micro-fabrication (or semiconductor processing), with at least five years of direct experience with RIE process development. Candidates must have at least a bachelor's degree in science or engineering, or equivalent experience combined with education in nano-/micro-fabrication and semiconductor processing. An advanced degree in science or engineering or nanofabrication is highly desired. This position is expected to be within NIST pay band III-IV (salary $66,510 - $145,629), commensurate with education, training and/or experience. About NIST Founded in 1901, NIST is a non-regulatory federal agency within the Department of Commerce. NIST's mission is to promote U.S. innovation and industrial competitiveness by advancing measurement science, standards, and technology in ways that enhance economic security and improve our quality of life. To learn more about NIST, follow NIST on YouTube, twitter, or Facebook. The Department of Commerce is an Equal Opportunity Employer. US citizenship is required ( Order 11935, only United States citizens and nationals may be appointed to competitive service Federal jobs). Please send expressions of interest, including resume to: Jessie Zhang Center for Nanoscale Science and Technology National Institute of Standards and Technology 100 Bureau Drive, MS 6201 Gaithersburg, MD 20899-6201 USA chen.zhang at nist.gov -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: NanoFab Process Engineer Rev 3 Nov 2017.pdf Type: application/pdf Size: 389033 bytes Desc: NanoFab Process Engineer Rev 3 Nov 2017.pdf URL: From Sherine.George at rice.edu Wed Nov 15 16:31:43 2017 From: Sherine.George at rice.edu (Sherine George) Date: Wed, 15 Nov 2017 15:31:43 -0600 Subject: [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? Message-ID: <00d601d35e59$21af8e50$650eaaf0$@rice.edu> Hello All, We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF4/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the paper is the creation of Zn(CFX)y compounds via CF3 radicals and CF3+ present in the plasma that are subsequently removed via Ar+ ion bombardment. Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience with such an etch involving ZnO and is able to provide guidance on best practices? Thanks, Sherine George, Ph.D. Research Scientist, Nanofabrication Cleanroom Shared Equipment Authority, Rice University Abercrombie, C112 Office: 713-348-4307 |Cell: 217-819-6740 | sherine.george at rice.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: JP-58-52-1536.pdf Type: application/pdf Size: 2999580 bytes Desc: not available URL: From craig.ward at oxinst.com Fri Nov 17 13:29:40 2017 From: craig.ward at oxinst.com (WARD Craig) Date: Fri, 17 Nov 2017 18:29:40 +0000 Subject: [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? Message-ID: <04B653F756F79C4282AFECF2C6EED18B83167BBE@UKCENMBX04.oxinst.com> Sherine, As with sputtering any metal in a vacuum chamber there will be some metal redeposited in the chamber. How much depends on the process itself, mask open area, etch rate and throughput. This will most likely not cause any harm the ICP tool unless you get sufficient buildup of a metallic coating on the ICP tube itself then this will manifest in plasma stability and striking issues. If this does happen then you can always bead blast the tube to remove any residual metal. So, as far as the tool goes you are fairly safe. I cannot offer the same reassurance for device performance. As soon as you have introduced metal into an etch chamber there is a risk of contamination through re-sputtering of the metal deposited onto wafer clamps etc.. If you have any further process related questions with Oxford tools please don't hesitate to let me know. Best Regards, Craig Ward US Applications Manager Oxford Instruments America, Inc. 300 Baker Avenue, Suite 150, Concord, MA 01742, USA Mobile: +1 (978) 764 7023 Email: craig.ward at oxinst.com http://www.oxford-instruments.com/ [fb-logo_signature] [twitter-logo_signature] [gplus-logo_signature] [li-logo_signature] [blog-logo_signature] [Email-footer-ASP3] From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Sherine George Sent: Wednesday, November 15, 2017 4:32 PM To: labnetwork at mtl.mit.edu Subject: -|EXT|- [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? Hello All, We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF4/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the paper is the creation of Zn(CFX)y compounds via CF3 radicals and CF3+ present in the plasma that are subsequently removed via Ar+ ion bombardment. Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience with such an etch involving ZnO and is able to provide guidance on best practices? Thanks, Sherine George, Ph.D. Research Scientist, Nanofabrication Cleanroom Shared Equipment Authority, Rice University Abercrombie, C112 Office: 713-348-4307 |Cell: 217-819-6740 |sherine.george at rice.edu Click here to report this email as spam. ___________________________________________________________________________This e-mail is confidential and is for the addressee only. Please refer to www.oxinst.com/email-statement for regulatory information. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 1027 bytes Desc: image001.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 995 bytes Desc: image002.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image003.jpg Type: image/jpeg Size: 1167 bytes Desc: image003.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image004.jpg Type: image/jpeg Size: 1134 bytes Desc: image004.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image005.jpg Type: image/jpeg Size: 1011 bytes Desc: image005.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image006.jpg Type: image/jpeg Size: 13155 bytes Desc: image006.jpg URL: From fouad.karouta at anu.edu.au Sun Nov 19 18:22:59 2017 From: fouad.karouta at anu.edu.au (Fouad Karouta) Date: Sun, 19 Nov 2017 23:22:59 +0000 Subject: [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? In-Reply-To: <04B653F756F79C4282AFECF2C6EED18B83167BBE@UKCENMBX04.oxinst.com> References: <04B653F756F79C4282AFECF2C6EED18B83167BBE@UKCENMBX04.oxinst.com> Message-ID: Hi Sherine, Further to Craig remarks I wonder if the CF4/Ar is the right gas mixture to etch ZnO where the etch seems more physical upon your description then chemical. Note Zn fluoride is quite non-volatile. If you look in literature a more chemical etching of ZnO would use CH4-H2. However the latter needs to be alternated with short oxygen plasma to remove polymers formed during the CH4:H2 step. Regards, Fouad Karouta ************************************* Manager ANFF ACT Node Australian National Fabrication Facility Research School of Physics and Engineering L. Huxley Building (#56), Mills Road, Room 4.02 Australian National University ACT 0200, Canberra, Australia Tel: + 61 2 6125 7174 Mob: + 61 451 046 412 Email: fouad.karouta at anu.edu.au http://anff-act.anu.edu.au/ From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of WARD Craig Sent: Saturday, 18 November 2017 5:30 AM To: Sherine George Cc: labnetwork at mtl.mit.edu Subject: [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? Sherine, As with sputtering any metal in a vacuum chamber there will be some metal redeposited in the chamber. How much depends on the process itself, mask open area, etch rate and throughput. This will most likely not cause any harm the ICP tool unless you get sufficient buildup of a metallic coating on the ICP tube itself then this will manifest in plasma stability and striking issues. If this does happen then you can always bead blast the tube to remove any residual metal. So, as far as the tool goes you are fairly safe. I cannot offer the same reassurance for device performance. As soon as you have introduced metal into an etch chamber there is a risk of contamination through re-sputtering of the metal deposited onto wafer clamps etc.. If you have any further process related questions with Oxford tools please don't hesitate to let me know. Best Regards, Craig Ward US Applications Manager Oxford Instruments America, Inc. 300 Baker Avenue, Suite 150, Concord, MA 01742, USA Mobile: +1 (978) 764 7023 Email: craig.ward at oxinst.com http://www.oxford-instruments.com/ [fb-logo_signature] [twitter-logo_signature] [gplus-logo_signature] [li-logo_signature] [blog-logo_signature] [Email-footer-ASP3] From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Sherine George Sent: Wednesday, November 15, 2017 4:32 PM To: labnetwork at mtl.mit.edu Subject: -|EXT|- [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber? Hello All, We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF4/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the paper is the creation of Zn(CFX)y compounds via CF3 radicals and CF3+ present in the plasma that are subsequently removed via Ar+ ion bombardment. Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience with such an etch involving ZnO and is able to provide guidance on best practices? Thanks, Sherine George, Ph.D. Research Scientist, Nanofabrication Cleanroom Shared Equipment Authority, Rice University Abercrombie, C112 Office: 713-348-4307 |Cell: 217-819-6740 |sherine.george at rice.edu Click here to report this email as spam. ___________________________________________________________________________ This e-mail is confidential and is for the addressee only. Please refer to www.oxinst.com/email-statement for regulatory information. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 1027 bytes Desc: image001.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 995 bytes Desc: image002.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image003.jpg Type: image/jpeg Size: 1167 bytes Desc: image003.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image004.jpg Type: image/jpeg Size: 1134 bytes Desc: image004.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image005.jpg Type: image/jpeg Size: 1011 bytes Desc: image005.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image006.jpg Type: image/jpeg Size: 13155 bytes Desc: image006.jpg URL: From crraum at gmail.com Mon Nov 27 22:13:33 2017 From: crraum at gmail.com (Christopher Raum) Date: Mon, 27 Nov 2017 19:13:33 -0800 Subject: [labnetwork] Job Opportunity at UC Berkeley, Physics, within the Marvell Nanofabrication Laboratory Message-ID: Hello All, The Experimental Cosmology group at UC Berkeley is searching for an R&D engineer to perform as a process engineer in the Marvell Nanofabrication Laboratory. The complete job description and application process are accessed via: https://jobsprod.is.berkeley.edu/psc/jobsprod/EMPLOYEE/HRMS/c/HRS_HRAM.HRS_CE.GBL?Page=HRS_CE_JOB_DTL&Action=A&JobOpeningId=24129 Job Requisition Number: 24129. Physics at Berkeley is home to faculty who are devoted to scientific discovery and the teaching of future physicists and students, both undergrad and grad, who come to learn and participate in cutting-edge research. The department has the full spectrum of scientists and has growing programs in: biophysics, quantum physics, atomic physics and quantum technologies. The Marvell NanoLab is a shared research center providing more than 100 Principal Investigators and over 500 academic and industrial researchers a complete set of micro- and nano-fabrication tools. Using the Marvell NanoLab facilities, this position involves professional engineering and engineering technician support as part of an academic instructional lab for experimental Cosmology research projects and programs. Engineering activities include the micro-fabrication design and construction of detectors at the Marvell Nanofabrication Laboratory, and detailed documentation of the fabrication processes. ? Under general supervision, participates in the micro-fabrication of detector ? Fabricates silicon wafers with metal and insulating layers. ? Process engineering of the following processes: metal, oxide, and nitride deposition ? Optical lithography; Metal, oxide, and nitride etching. ? Under general supervision, participates in the wafer characterization and analysis and develops process techniques to improve the fabrication of silicon wafers. ? Under general supervision, assists with maintenance and upgrades for tools used in our detector process. ? Gathers and analyzes data; prepares formal engineering reports, drawings and status reports. ? Work subject to review by more senior level Engineer. ? Assists with implementation of business processes. ? Experience in micro-fabrication is required. ? Working knowledge of engineering principles and methods in order to independently perform professional design work of limited scope and complexity. ? Organizational abilities and decision-making to prioritize work assignments. ? Effective written and verbal communication skills. ? Ability to work in a collaborative manner, to assist in identifying any challenges or barriers. Education: Bachelor?s degree in engineering or science in related discipline or equivalent experience. -Christopher Raum -- R&D Engineer 3 Experimental Cosmology Group Radio Astronomy Lab University of California, Berkeley 151 LeConte Hall Berkeley, CA, 94720 Email: craum at berkeley.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From rreger at purdue.edu Tue Nov 28 08:27:05 2017 From: rreger at purdue.edu (Reger, Ronald K) Date: Tue, 28 Nov 2017 13:27:05 +0000 Subject: [labnetwork] Birck Nanotechnology Seeking a Lithography Research Engineer Message-ID: <694b383145b446a8b44a359f8c7825dc@wppexc01.purdue.lcl> Dear Colleagues, We have an opening in lithography on our Research Engineering staff here at Birck. The job description is as follows: ----------- The Birck Nanotechnology Center provides electron beam and optical lithography processes, equipment and training for student and professional researchers, both inside and outside of Purdue. In addition the center provides photomasks to use in optical lithography, using a sophisticated laser system to make the photomasks for the researchers. This research engineering position is responsible for training/teaching electron beam lithography process techniques & science to users and for supporting the research of multiple groups within the facility. Additionally, this position will lead the characterization of lithography processes and develop new and novel lithography techniques as part of the ongoing faculty research initiatives. Required: * Master?s degree or higher in Electrical Engineering, Physics, Chemistry, Mechanical Engineering, or Materials Science. * 2 years of experience in semiconductor processing, device fabrication, and photolithography. * In lieu of degree, consideration will be given to an equivalent combination of related education and required work experience. * Working knowledge of laboratory best practices and safe laboratory procedures. * Ability to develop/produce lithography processes for use by the research community. * Adeptness to work in a multidisciplinary research environment with scientists and engineers. * Ability to design, modify, and repair photolithography equipment. * Competence to interact with multiple levels of customers, both internal and external to Purdue University. Preferred: * PhD in Electrical Engineering, Physics, Chemistry, Mechanical Engineering, or Materials Science or closely related discipline. * E-beam expertise. Link to job description and to apply: http://purdue.taleo.net/careersection/wl/joblist.ftl?lang=en&portal=10140480283 Look for job #: 1702020 Thanks, Ron Reger Engineering Manager Birck Nanotechnology Center, Purdue University -------------- next part -------------- An HTML attachment was scrubbed... URL: From mwoonk at umich.edu Thu Nov 30 10:46:59 2017 From: mwoonk at umich.edu (Matthew Oonk) Date: Thu, 30 Nov 2017 10:46:59 -0500 Subject: [labnetwork] Low-stress Sputtered Ir Message-ID: Hello all We are having difficulty getting a low-stress (less than +/- 200MPA) sputtered Ir film here for a couple of users. -It's a batch-to-batch variability so the first Ir wafer can vary between -100 and >1000MPA for the first wafer and then films are consistently that same stress wafer-to-wafer when we run 5 wafer batches. (There is a small first wafer affect but not anywhere near the run-to-run magnitude shifts.) -We start with similar base pressure and we have tried pre-coating the chamber with Ti and running Ir burn-in but the large batch-to-batch stress variability persists. -We run low-stress similar metals such as Ti, W, Ta, TiW on the same tool with consistent stress and these all respond typically to pressure and power changes as well. -The vendor has very little insight. -The Ir film stress changes as expected with pressure, power and bias. So we could run the film now by measuring the first wafer stress and then adjusting the bias but this burns thru target and makes the runs more likely to flake out on the shielding. Does anybody run sputtered Ir with consistent stress? Any insight as to what else we could try? Thanks for any information -Matt Matthew Oonk Research Engineer Lurie Nanofabrication Facility University of Michigan 734-646-1275 mwoonk at umich.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: