From ahad.syed at kaust.edu.sa Sun Oct 1 10:34:59 2017 From: ahad.syed at kaust.edu.sa (Ahad Syed) Date: Sun, 1 Oct 2017 14:34:59 +0000 Subject: [labnetwork] ALD Pre-cursors Message-ID: <1506868498999.17882@kaust.edu.sa> Dear Colleagues, We are looking for vendors who can supply us with ALD Pre-cursors. We have been procuring them from SAFC Hi-Tech for quite a while, but their lead-time has increased significantly in the past couple of years. This has something to do with their factory shutdown in the UK and orders are now being routed through the US. Strem has been recommended to us and we have used Air-Liquide for our LN2 supply. We could be looking at these two (based on reviews) or if the Labnetwork members have any other suggestions, they would be most welcome. Thank you and regards, Ahad -- Nanofabrication Core Lab 4700 King Abdullah University of Science and Technology 0250-WS02 Building 3, Thuwal 23955-6900, Kingdom of Saudi Arabia Tel:+966 12 808 2348 Visit The Core Labs ________________________________ This message and its contents including attachments are intended solely for the original recipient. If you are not the intended recipient or have received this message in error, please notify me immediately and delete this message from your computer system. Any unauthorized use or distribution is prohibited. Please consider the environment before printing this email. -------------- next part -------------- An HTML attachment was scrubbed... URL: From kmcpeak at lsu.edu Tue Oct 3 07:50:41 2017 From: kmcpeak at lsu.edu (Kevin McPeak) Date: Tue, 3 Oct 2017 06:50:41 -0500 Subject: [labnetwork] Raith vs. Elionix E-beam writers Message-ID: Dear Colleagues, My colleagues at Tulane University and I recently were awarded an NSF MRI grant for an E-beam lithography system. We are currently looking at two different suppliers for this system, Raith and Elionix. For Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 kV) systems and for Elionix we are looking at their latest ELS-S50EX (50 kV) model. All three systems have been placed within our budget. Our group of e-beam writers is interested in achieving both large single field sizes of periodic arrays of nanostructures (e.g. ~200 nm features over 500 um x 500 um region) and excellent stitching accuracy for writing 5 mm x 5 mm arrays of nanostructures. I would appreciate any input you have on using Raith and Elionix systems for high-performance e-beam writing (i.e. custom support, usability, uptime, etc.) Thank you. Regards, Kevin -- Kevin M. McPeak Assistant Professor Louisiana State University Dept. of Chemical Engineering 110 Chemical Engineering Bldg Room 324 S. Stadium Drive Baton Rouge, LA 70803 email: kmcpeak at lsu.edu phone: 225-578-0058 From bgila at ufl.edu Tue Oct 3 12:13:50 2017 From: bgila at ufl.edu (Brent Gila) Date: Tue, 3 Oct 2017 12:13:50 -0400 Subject: [labnetwork] Raith vs. Elionix E-beam writers In-Reply-To: References: Message-ID: <63b854bc-e08d-4c6a-e555-e0c6f61c52e6@ufl.edu> Hello Kevin, We have had a Raith 150 system at UF for many years now and the tool works very well.? I am not familiar with the Elionix line of tools, but I can vouch for the Raith systems and their support.? We are currently working on a rectenna project that has CDs that are tighter than what you have listed and it has no issue in creating this pattern over large areas. As with ANY ebeam litho system, what is very important is the proper dose arrays when determining the exposure routine and more importantly, the proximity corrections for highly dense arrays or lines.? I have met several researchers who have not done sufficient proximity correction (or any at all) and simply complain that the tool does not function properly.? It would be a good idea to include proximity correction software as a part of the purchase if it is not already included with the instrument.? There are some excellent 3rd party software packages that can be added for proximity correction, but be prepared as they are not cheap. Best Regards, Brent -- Brent P. Gila, PhD. Director, Nanoscale Research Facility 1041 Center Drive University of Florida Gainesville, Florida 32611 Tel:352-273-2245 Fax:352-846-2877 email:bgila at ufl.edu On 10/3/2017 7:50 AM, Kevin McPeak wrote: > Dear Colleagues, > > My colleagues at Tulane University and I recently were awarded an NSF > MRI grant for an E-beam lithography system. We are currently looking > at two different suppliers for this system, Raith and Elionix. For > Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 > kV) systems and for Elionix we are looking at their latest ELS-S50EX > (50 kV) model. All three systems have been placed within our budget. > > Our group of e-beam writers is interested in achieving both large > single field sizes of periodic arrays of nanostructures (e.g. ~200 nm > features over 500 um x 500 um region) and excellent stitching accuracy > for writing 5 mm x 5 mm arrays of nanostructures. > > I would appreciate any input you have on using Raith and Elionix > systems for high-performance e-beam writing (i.e. custom support, > usability, uptime, etc.) > > Thank you. > > Regards, > Kevin > From bill_flounders at berkeley.edu Tue Oct 3 12:25:33 2017 From: bill_flounders at berkeley.edu (A. William (Bill) FLOUNDERS) Date: Tue, 3 Oct 2017 09:25:33 -0700 Subject: [labnetwork] Raith vs. Elionix E-beam writers In-Reply-To: References: Message-ID: Kevin, I would encourage including Crestec in this comparison set. Following Labnet protocol, I will send more specific vendor and equipment comments 'off line'. Congratulations! on your NSF award. Bill Flounders UC Berkeley On Tue, Oct 3, 2017 at 4:50 AM, Kevin McPeak wrote: > Dear Colleagues, > > My colleagues at Tulane University and I recently were awarded an NSF > MRI grant for an E-beam lithography system. We are currently looking > at two different suppliers for this system, Raith and Elionix. For > Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 > kV) systems and for Elionix we are looking at their latest ELS-S50EX > (50 kV) model. All three systems have been placed within our budget. > > Our group of e-beam writers is interested in achieving both large > single field sizes of periodic arrays of nanostructures (e.g. ~200 nm > features over 500 um x 500 um region) and excellent stitching accuracy > for writing 5 mm x 5 mm arrays of nanostructures. > > I would appreciate any input you have on using Raith and Elionix > systems for high-performance e-beam writing (i.e. custom support, > usability, uptime, etc.) > > Thank you. > > Regards, > Kevin > > -- > Kevin M. McPeak > Assistant Professor > Louisiana State University > Dept. of Chemical Engineering > 110 Chemical Engineering Bldg Room 324 > S. Stadium Drive > Baton Rouge, LA 70803 > email: kmcpeak at lsu.edu > phone: 225-578-0058 > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork > -------------- next part -------------- An HTML attachment was scrubbed... URL: From lewin at illinois.edu Tue Oct 3 17:26:41 2017 From: lewin at illinois.edu (Reinhart, Leslie Lewin) Date: Tue, 3 Oct 2017 21:26:41 +0000 Subject: [labnetwork] University of Illinois - Research Engineer - Micro and Nanotechnology Laboratory Message-ID: <0B48381248D4954CBEE4C4CC8FD100BDBE8DBB97@chimbx3.ad.uillinois.edu> The Micro and Nanotechnology Laboratory at the University of Illinois at Urbana-Champaign seeks applicants for a Research Engineer position. Reporting to the Principal Research Engineer, the Research Engineer facilitates research efforts being conducted in a cleanroom laboratory environment and specifically, with responsibility for optical lithography training and equipment maintenance. The Research Engineer also develops process recipes for optical lithography, performs process troubleshooting, and advises students on optical lithography process development. For more information regarding this position please see attached, or to apply, please visit Research Engineer. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: University of Illinois - Research Engineer - MNTL.pdf Type: application/pdf Size: 311244 bytes Desc: University of Illinois - Research Engineer - MNTL.pdf URL: From ahryciw at ualberta.ca Wed Oct 4 12:06:35 2017 From: ahryciw at ualberta.ca (Aaron Hryciw) Date: Wed, 4 Oct 2017 10:06:35 -0600 Subject: [labnetwork] Carbon deposition in e-beam evaporator Message-ID: Dear colleagues, We have recently had a request to deposit carbon via electron-beam evaporation, to create thin (?10 nm) films of diamond-like carbon. We are an open-access nanofabrication/characterization centre in a university setting, so cross-contamination is a concern. However, in addition to our workhorse e-beam evaporators, we have an under-utilised cryo-pumped e-beam system, the chamber of which is typically lined with Al foil, and I am considering using this system for this carbon deposition. It has historically only been used for metal and Si deposition. Given that the foil is replaced frequently, I would hope that this would mitigate chamber contamination. Are there any other concerns with carbon deposition via e-beam evaporation that I should be aware of? Any advice/wisdom/tips and tricks would be appreciated. Many thanks. Cheers, ? Aaron Aaron Hryciw, PhD, PEng Fabrication Group Manager University of Alberta - nanoFAB W1-060 ECERF Building 9107 - 116 Street Edmonton, Alberta Canada T6G 2V4 Ph: 780-940-7938 www.nanofab.ualberta.ca -------------- next part -------------- An HTML attachment was scrubbed... URL: From IRHarvey at eng.utah.edu Wed Oct 4 18:50:15 2017 From: IRHarvey at eng.utah.edu (Ian Harvey) Date: Wed, 4 Oct 2017 16:50:15 -0600 Subject: [labnetwork] Flexus wafer bow measurement on GaAs wafers? Message-ID: <39007E22-F183-4CF0-9D6C-9D29E64A25A3@eng.utah.edu> Dear Labnetwork colleagues, We are unable to use our Flexus wafer bow measurement tool on GaAs wafers (300C) on behalf of an industrial CA customer. Is anyone interested in this recharge referral? Thanks, ?Ian Ian R. Harvey, Ph.D. Associate Director Utah Nanofab at the University of Utah Cleanroom Fabrication and nanoImaging & Surface Analysis 801/585-6162 (voicemail) www.nanofab.utah.edu http://sal.nanofab.utah.edu Micron Technology Foundation Inc., Microscopy Suite Sorenson Molecular Biotechnology Building ? A USTAR Innovation Center 36 South Wasatch Drive Suite 2500 Salt Lake City, Utah 84112-9011 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PastedGraphic-2.pdf Type: application/pdf Size: 22517 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: From aju-jugessur at uiowa.edu Thu Oct 5 14:08:57 2017 From: aju-jugessur at uiowa.edu (Jugessur, Aju S) Date: Thu, 5 Oct 2017 18:08:57 +0000 Subject: [labnetwork] Raith vs. Elionix E-beam writers In-Reply-To: References: Message-ID: <8B55C7CA-392C-4F33-AF7F-F31D039CBF7D@uiowa.edu> Kevin, We have the latest Raith Voyager and also commissioned the Vistec 5000plus at UofT. If you want to discuss these tools, it might be best to chat offline. Thanks Aju On Oct 3, 2017, at 6:50 AM, Kevin McPeak > wrote: Dear Colleagues, My colleagues at Tulane University and I recently were awarded an NSF MRI grant for an E-beam lithography system. We are currently looking at two different suppliers for this system, Raith and Elionix. For Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 kV) systems and for Elionix we are looking at their latest ELS-S50EX (50 kV) model. All three systems have been placed within our budget. Our group of e-beam writers is interested in achieving both large single field sizes of periodic arrays of nanostructures (e.g. ~200 nm features over 500 um x 500 um region) and excellent stitching accuracy for writing 5 mm x 5 mm arrays of nanostructures. I would appreciate any input you have on using Raith and Elionix systems for high-performance e-beam writing (i.e. custom support, usability, uptime, etc.) Thank you. Regards, Kevin -- Kevin M. McPeak Assistant Professor Louisiana State University Dept. of Chemical Engineering 110 Chemical Engineering Bldg Room 324 S. Stadium Drive Baton Rouge, LA 70803 email: kmcpeak at lsu.edu phone: 225-578-0058 _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork Aju Jugessur, Ph.D. Director, University of Iowa Microfabrication Facility (UIMF) Optical Science and Technology Center Professor Adjunct, Physics and Astronomy University of Iowa Office: IATL 202, Tel: 319-3532342 Labs: IATL 170, 172, 174 https://ostc.uiowa.edu/uimf -------------- next part -------------- An HTML attachment was scrubbed... URL: From sbabu8118 at gmail.com Fri Oct 6 00:35:16 2017 From: sbabu8118 at gmail.com (sreedhar babu) Date: Fri, 6 Oct 2017 10:05:16 +0530 Subject: [labnetwork] Raith vs. Elionix E-beam writers In-Reply-To: <8B55C7CA-392C-4F33-AF7F-F31D039CBF7D@uiowa.edu> References: <8B55C7CA-392C-4F33-AF7F-F31D039CBF7D@uiowa.edu> Message-ID: Dear Kelvin, We are using Raith-Eline(30kV) system from past eight years. Service support from Raith is very good. Critical dimensions will be possible better than your listed values. Thanks&Regards Sreedhar On Thu, Oct 5, 2017 at 11:38 PM, Jugessur, Aju S wrote: > Kevin, > > We have the latest Raith Voyager and also commissioned the Vistec 5000plus > at UofT. > > If you want to discuss these tools, it might be best to chat offline. > > Thanks > Aju > > On Oct 3, 2017, at 6:50 AM, Kevin McPeak wrote: > > Dear Colleagues, > > My colleagues at Tulane University and I recently were awarded an NSF > MRI grant for an E-beam lithography system. We are currently looking > at two different suppliers for this system, Raith and Elionix. For > Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 > kV) systems and for Elionix we are looking at their latest ELS-S50EX > (50 kV) model. All three systems have been placed within our budget. > > Our group of e-beam writers is interested in achieving both large > single field sizes of periodic arrays of nanostructures (e.g. ~200 nm > features over 500 um x 500 um region) and excellent stitching accuracy > for writing 5 mm x 5 mm arrays of nanostructures. > > I would appreciate any input you have on using Raith and Elionix > systems for high-performance e-beam writing (i.e. custom support, > usability, uptime, etc.) > > Thank you. > > Regards, > Kevin > > -- > Kevin M. McPeak > Assistant Professor > Louisiana State University > Dept. of Chemical Engineering > 110 Chemical Engineering Bldg Room 324 > S. Stadium Drive > Baton Rouge, LA 70803 > email: kmcpeak at lsu.edu > phone: 225-578-0058 > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork > > > > > > > > > > *Aju Jugessur, Ph.D. Director, University of Iowa Microfabrication > Facility (UIMF) Optical Science and Technology Center Professor Adjunct, > Physics and Astronomy University of Iowa Office: IATL 202, Tel: 319-3532342 > Labs: IATL 170, 172, 174 https://ostc.uiowa.edu/uimf > * > > > > > > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork > > -- *Thanks&Regards* *K.Sreedhar Babu* *Sr.Facility Technologist* *National Nano Fabrication Centre* *Center For Nano Science And Engineering* *Indian Institute Of Science* *Bengaluru-560012* *Mobile: +91 9492946127* *email: sreedhar@**cense.iisc.ernet.in * -------------- next part -------------- An HTML attachment was scrubbed... URL: From zhihong.wang at kaust.edu.sa Fri Oct 6 04:12:16 2017 From: zhihong.wang at kaust.edu.sa (Zhihong Wang) Date: Fri, 6 Oct 2017 08:12:16 +0000 Subject: [labnetwork] Raith vs. Elionix E-beam writers In-Reply-To: References: Message-ID: <9d73b935d13446b28a32b6a244736001@SCBMCHP05.kaustcloud.com> Kevin, Yes, I agree with Bill. If you are looking at a 50 kV E-beam Lithography system, Crestec should be one of the options. We have had a Crestec CABL 9000 system here at KAUST for 9 years. It works well. Regards, Zhihong Wang Advanced Nanofabrication Core Laboratory King Abdullah University of Science and Technology From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of A. William (Bill) FLOUNDERS Sent: Tuesday, October 03, 2017 7:26 PM To: Kevin McPeak Cc: labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Raith vs. Elionix E-beam writers Kevin, I would encourage including Crestec in this comparison set. Following Labnet protocol, I will send more specific vendor and equipment comments 'off line'. Congratulations! on your NSF award. Bill Flounders UC Berkeley On Tue, Oct 3, 2017 at 4:50 AM, Kevin McPeak > wrote: Dear Colleagues, My colleagues at Tulane University and I recently were awarded an NSF MRI grant for an E-beam lithography system. We are currently looking at two different suppliers for this system, Raith and Elionix. For Raith we are looking at their Voyager100 (50 kV) and E-Line Plus (30 kV) systems and for Elionix we are looking at their latest ELS-S50EX (50 kV) model. All three systems have been placed within our budget. Our group of e-beam writers is interested in achieving both large single field sizes of periodic arrays of nanostructures (e.g. ~200 nm features over 500 um x 500 um region) and excellent stitching accuracy for writing 5 mm x 5 mm arrays of nanostructures. I would appreciate any input you have on using Raith and Elionix systems for high-performance e-beam writing (i.e. custom support, usability, uptime, etc.) Thank you. Regards, Kevin -- Kevin M. McPeak Assistant Professor Louisiana State University Dept. of Chemical Engineering 110 Chemical Engineering Bldg Room 324 S. Stadium Drive Baton Rouge, LA 70803 email: kmcpeak at lsu.edu phone: 225-578-0058 _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork ________________________________ This message and its contents including attachments are intended solely for the original recipient. If you are not the intended recipient or have received this message in error, please notify me immediately and delete this message from your computer system. Any unauthorized use or distribution is prohibited. Please consider the environment before printing this email. -------------- next part -------------- An HTML attachment was scrubbed... URL: From aju-jugessur at uiowa.edu Mon Oct 9 11:29:08 2017 From: aju-jugessur at uiowa.edu (Jugessur, Aju S) Date: Mon, 9 Oct 2017 15:29:08 +0000 Subject: [labnetwork] Etching glass with Bismuth Oxide Message-ID: <2C8E509B-E21A-4305-880E-71C0E10F3FE8@uiowa.edu> Hi all, We have a user who is trying to dry etch (> 5-10 microns deep) into a glass material that has the following composition: 16 % PbO 46 % Bi2O3 30 % Ga2O3 8 % B2O3 I was wondering if anyone has some experience with something similar. We do have Oxford PlasmaPro instrument with BCl3, Cl2, Ar, O2 and CH4 connected right now. Any suggestions will be greatly appreciated. Thanks Aju Aju Jugessur, Ph.D. Director, University of Iowa Microfabrication Facility (UIMF) Optical Science and Technology Center Professor Adjunct, Physics and Astronomy University of Iowa Office: IATL 202, Tel: 319-3532342 Labs: IATL 170, 172, 174 https://ostc.uiowa.edu/uimf -------------- next part -------------- An HTML attachment was scrubbed... URL: From savithap at iisc.ac.in Mon Oct 9 13:05:52 2017 From: savithap at iisc.ac.in (Savitha P) Date: Mon, 9 Oct 2017 17:05:52 +0000 Subject: [labnetwork] Etch rate of expired BOE solution Message-ID: Hi all, We have a lot of BOE(13:2) solution expired in 2014, which has been seeing declining oxide etch rates since sometime. Is there some way of improving the etch rate, like by adding fresh HF (50%). Kindly let me know if anyone has information on this. Regards, Savitha ________________________________ Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3254 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: From M.R.Zuiddam at tudelft.nl Tue Oct 10 09:40:38 2017 From: M.R.Zuiddam at tudelft.nl (Marc Zuiddam - TNW) Date: Tue, 10 Oct 2017 13:40:38 +0000 Subject: [labnetwork] Safety regulation III/V materials Message-ID: <6C521A5E02323C4CB73135692FB72A8548FE7301@SRV361.tudelft.net> Dear people, We are using more and more III/V materials like GaAs in our lab. Does one of you have a procedure how to work safely with it? Any suggestions, tips or safety precautions we should implement? Any help is appreciated! Best regards, Ing. M.R. (Marc) Zuiddam Senior process engineer Delft University of Technology Lorentzweg 1, 2628 CJ Delft The Netherlands TNW (bldg 22) - room D172 Phone: +31 (0)15 27 87093 / +31 652169000 email: m.r.zuiddam at tudelft.nl website: www.qn.tudelft.nl/KN [cid:8B64A9F9-1600-4F23-8E6B-4FF421E35AB4] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.png Type: image/png Size: 17854 bytes Desc: image001.png URL: From hathaway at cns.fas.harvard.edu Tue Oct 10 10:12:31 2017 From: hathaway at cns.fas.harvard.edu (Mac Hathaway) Date: Tue, 10 Oct 2017 10:12:31 -0400 Subject: [labnetwork] Etch rate of expired BOE solution In-Reply-To: References: Message-ID: <59DCD54F.5030306@cns.fas.harvard.edu> Hi Savitha, I don't have personal experience with old BOE, but since HF is made by bubbling HF gas through water, I would expect the HF gas to come out of solution and evaporate over time, lowering the HF concentration. If the bottles have been sealed, I don't know why it would weaken. While adding fresh 49% HF to the existing stock would increase the etch rate, figuring out the concentration of your "resultant" mixture would be challenging, since you don't know the current (weakened) concentration. If you are doing an etch where knowing the precise etch rate is important, you might try just doing a rate test on each bottle as it is opened and put into use, marking the rate on the side of the bottle, and letting that suffice. I am unaware of any other issues that can arise from the use of old HF or BOE, such as surface roughening, or things like that. Other more experienced hands will no doubt weigh in... Mac Mac Hathaway Senior Process and Systems Engineer Harvard Center for Nanoscale Systems 11 Oxford St. Cambridge, MA02138 617-495-9012 On 10/9/2017 1:05 PM, Savitha P wrote: > > Hi all, > > > We have a lot of BOE(13:2) solution expired in 2014, which has been > seeing declining oxide etch rates since sometime. Is there some way > of improving the etch rate, like by adding fresh HF (50%). > > > Kindly let me know if anyone has information on this. > > > Regards, > > > Savitha > > ________________________________ > > Dr. Savitha P > Chief Operating Officer > National Nanofabrication Centre > Centre for Nanoscience and Engineering > Indian Institute of Science > Bangalore - 560012 > India. > Ph. +91 80 2293 3254 > www.cense.iisc.ac.in > /**Please note the change in my e-mail id**/ > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From savithap at iisc.ac.in Wed Oct 11 00:05:49 2017 From: savithap at iisc.ac.in (Savitha P) Date: Wed, 11 Oct 2017 04:05:49 +0000 Subject: [labnetwork] Etch rate of expired BOE solution In-Reply-To: <59DCD54F.5030306@cns.fas.harvard.edu> References: , <59DCD54F.5030306@cns.fas.harvard.edu> Message-ID: Hi Mac: We have been doing test pieces to find the etch rate every week, but have been seeing it going down, hence the thought of adding fresh HF. Thank you for your suggestions. Regards, Savitha ________________________________ From: Mac Hathaway Sent: Tuesday, October 10, 2017 7:42:31 PM To: labnetwork at mtl.mit.edu; Savitha P Subject: Re: [labnetwork] Etch rate of expired BOE solution Hi Savitha, I don't have personal experience with old BOE, but since HF is made by bubbling HF gas through water, I would expect the HF gas to come out of solution and evaporate over time, lowering the HF concentration. If the bottles have been sealed, I don't know why it would weaken. While adding fresh 49% HF to the existing stock would increase the etch rate, figuring out the concentration of your "resultant" mixture would be challenging, since you don't know the current (weakened) concentration. If you are doing an etch where knowing the precise etch rate is important, you might try just doing a rate test on each bottle as it is opened and put into use, marking the rate on the side of the bottle, and letting that suffice. I am unaware of any other issues that can arise from the use of old HF or BOE, such as surface roughening, or things like that. Other more experienced hands will no doubt weigh in... Mac Mac Hathaway Senior Process and Systems Engineer Harvard Center for Nanoscale Systems 11 Oxford St. Cambridge, MA 02138 617-495-9012 On 10/9/2017 1:05 PM, Savitha P wrote: Hi all, We have a lot of BOE(13:2) solution expired in 2014, which has been seeing declining oxide etch rates since sometime. Is there some way of improving the etch rate, like by adding fresh HF (50%). Kindly let me know if anyone has information on this. Regards, Savitha ________________________________ Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3254 www.cense.iisc.ac.in *Please note the change in my e-mail id* _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From mpleil at unm.edu Wed Oct 11 15:00:54 2017 From: mpleil at unm.edu (Matthias Pleil) Date: Wed, 11 Oct 2017 19:00:54 +0000 Subject: [labnetwork] Etch rate of expired BOE solution In-Reply-To: References: , <59DCD54F.5030306@cns.fas.harvard.edu>, Message-ID: We use BOE, 6:1 or 20:1 occasionally. We have actually kept a batch for a few years with little degradation in etch rates. We add water to keep the level constant. Kind Regards, Matthias Pleil, Ph.D. Research Professor & Lecturer III of Mech. Eng - UNM UNM MTTC Cleanroom Manager PI - Southwest Center for Microsystems Education scme-nm.org (505)272-7157 ________________________________ From: labnetwork-bounces at mtl.mit.edu on behalf of Savitha P Sent: Tuesday, October 10, 2017 10:05:49 PM To: Mac Hathaway; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Etch rate of expired BOE solution Hi Mac: We have been doing test pieces to find the etch rate every week, but have been seeing it going down, hence the thought of adding fresh HF. Thank you for your suggestions. Regards, Savitha ________________________________ From: Mac Hathaway Sent: Tuesday, October 10, 2017 7:42:31 PM To: labnetwork at mtl.mit.edu; Savitha P Subject: Re: [labnetwork] Etch rate of expired BOE solution Hi Savitha, I don't have personal experience with old BOE, but since HF is made by bubbling HF gas through water, I would expect the HF gas to come out of solution and evaporate over time, lowering the HF concentration. If the bottles have been sealed, I don't know why it would weaken. While adding fresh 49% HF to the existing stock would increase the etch rate, figuring out the concentration of your "resultant" mixture would be challenging, since you don't know the current (weakened) concentration. If you are doing an etch where knowing the precise etch rate is important, you might try just doing a rate test on each bottle as it is opened and put into use, marking the rate on the side of the bottle, and letting that suffice. I am unaware of any other issues that can arise from the use of old HF or BOE, such as surface roughening, or things like that. Other more experienced hands will no doubt weigh in... Mac Mac Hathaway Senior Process and Systems Engineer Harvard Center for Nanoscale Systems 11 Oxford St. Cambridge, MA 02138 617-495-9012 On 10/9/2017 1:05 PM, Savitha P wrote: Hi all, We have a lot of BOE(13:2) solution expired in 2014, which has been seeing declining oxide etch rates since sometime. Is there some way of improving the etch rate, like by adding fresh HF (50%). Kindly let me know if anyone has information on this. Regards, Savitha ________________________________ Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3254 www.cense.iisc.ac.in *Please note the change in my e-mail id* _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From James.Vlahakis at tufts.edu Wed Oct 11 17:38:37 2017 From: James.Vlahakis at tufts.edu (Vlahakis, James) Date: Wed, 11 Oct 2017 21:38:37 +0000 Subject: [labnetwork] sputtering In and Pa Message-ID: <676C9381B5E6AC4FAE9CD9CFCC40DF1ED2434FE3@tabvmexdag1mb03.tufts.ad.tufts.edu> Hi everyone, one of our users would like to sputter materials that we are unfamiliar with, indium and palladium. We are considering allowing these materials in our "dirty" sputter tool which has few material restrictions - Au, Ag, Al, Cu, Ge, ITO, Mg, Ni, Ti, Zn and fully cured polymers are allowed. For ITO and Mg we require the users to follow up with an Al sputter for encapsulation. Your advice or comments would be much appreciated Thanks jim -------------- next part -------------- An HTML attachment was scrubbed... URL: From gheorghe.iordache at kaust.edu.sa Thu Oct 12 04:08:33 2017 From: gheorghe.iordache at kaust.edu.sa (Gheorghe Iordache) Date: Thu, 12 Oct 2017 08:08:33 +0000 Subject: [labnetwork] exciting job opportunity: Safety and Facility Team Lead (Cleanroom 2000 sq.m.) at KAUST, Saudi Arabia Message-ID: <78e07fbbdd7a44339503c6ff6abf2d21@SCBMCHP02.kaustcloud.com> Dear All, We are currently offering two dream permanent staff positions at the Nanofabrication Core Lab cleanroom at KAUST, Saudi Arabia: 1) Safety and Facility Team Lead; 2) Cleanroom Technical Specialist Please share the info with experienced professionals to check the link below, apply online and/or send an email to our HR colleague cristian.rosia at kaust.edu.sa https://www.linkedin.com/pulse/exciting-opportunities-nanofabrication-core-lab-kaust-gheorghe/?trackingId=qwwmYitSLAtCg1zwsX3ztQ%3D%3D Kind regards, ======================= Gheorghe IORDACHE, PhD Physics, MBA Director of the Nanofabrication Core Lab at KAUST [cid:image004.png at 01D05684.C60BAC70] King Abdullah University of Science & Technology Al Khawarizmi Building 1 East, Level 3, Office 3417 Thuwal 23955-6900 Kingdom of Saudi Arabia Office: +966 12 808 0447 Mobile: +966 54 038 1154 Email: gheorghe.iordache at kaust.edu.sa Linkedin: https://sa.linkedin.com/in/gheorghe-iordache-phd-mba-6a15611 [static_qr_code_without_logo] Follow the Core Labs on corelabs.kaust.edu.sa , LinkedIn and Instagram Visit the Core Labs: https://corelabs.kaust.edu.sa/visitor-information ================ Please note that the weekend in Saudi Arabia is Friday and Saturday ________________________________ This message and its contents including attachments are intended solely for the original recipient. If you are not the intended recipient or have received this message in error, please notify me immediately and delete this message from your computer system. Any unauthorized use or distribution is prohibited. Please consider the environment before printing this email. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.png Type: image/png Size: 19315 bytes Desc: image001.png URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image004.png Type: image/png Size: 3738 bytes Desc: image004.png URL: From dzapotok at tescan-usa.com Thu Oct 12 08:43:03 2017 From: dzapotok at tescan-usa.com (Dave Zapotok) Date: Thu, 12 Oct 2017 12:43:03 +0000 Subject: [labnetwork] sputtering In and Pa In-Reply-To: <676C9381B5E6AC4FAE9CD9CFCC40DF1ED2434FE3@tabvmexdag1mb03.tufts.ad.tufts.edu> References: <676C9381B5E6AC4FAE9CD9CFCC40DF1ED2434FE3@tabvmexdag1mb03.tufts.ad.tufts.edu> Message-ID: Hi Jim, I used to sputter Palladium often. Steer clear of Indium, it's along the lines of sputtering lead without the health concerns. It will make a nasty mess of the chamber. Indium is has a low vapor pressure and will destroy the vacuum. It is also a "soft metal" at room temperature. It will implant all over the chamber and subsequent runs will dislodge the implanted indium. This will cause re-deposit. Bad idea. People often add palladium to gold to decrease grain size of the gold. It works great. No vapor pressure issues, no cross contamination problems. Hope it helps. Dave David Zapotok Regional Sales Manager, Northeast [Logo_New2016] Phone: 617-794-7994 dzapotok at tescan-usa.com www.tescan-usa.com [s8000-02] From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Vlahakis, James Sent: Wednesday, October 11, 2017 5:39 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] sputtering In and Pa Hi everyone, one of our users would like to sputter materials that we are unfamiliar with, indium and palladium. We are considering allowing these materials in our "dirty" sputter tool which has few material restrictions - Au, Ag, Al, Cu, Ge, ITO, Mg, Ni, Ti, Zn and fully cured polymers are allowed. For ITO and Mg we require the users to follow up with an Al sputter for encapsulation. Your advice or comments would be much appreciated Thanks jim -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2388 bytes Desc: image001.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 20377 bytes Desc: image002.jpg URL: From mariusz.martyniuk at uwa.edu.au Thu Oct 12 21:57:22 2017 From: mariusz.martyniuk at uwa.edu.au (Mariusz Martyniuk) Date: Fri, 13 Oct 2017 01:57:22 +0000 Subject: [labnetwork] sputtering In and Pa In-Reply-To: References: <676C9381B5E6AC4FAE9CD9CFCC40DF1ED2434FE3@tabvmexdag1mb03.tufts.ad.tufts.edu> Message-ID: We have significant experience with In and deposit it only in a dedicated evaporation chamber. It gets everywhere and will impact subsequent depositions. Cheers, Marius From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Dave Zapotok Sent: Thursday, 12 October 2017 8:43 PM To: Vlahakis, James; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] sputtering In and Pa Hi Jim, I used to sputter Palladium often. Steer clear of Indium, it's along the lines of sputtering lead without the health concerns. It will make a nasty mess of the chamber. Indium is has a low vapor pressure and will destroy the vacuum. It is also a "soft metal" at room temperature. It will implant all over the chamber and subsequent runs will dislodge the implanted indium. This will cause re-deposit. Bad idea. People often add palladium to gold to decrease grain size of the gold. It works great. No vapor pressure issues, no cross contamination problems. Hope it helps. Dave David Zapotok Regional Sales Manager, Northeast [Logo_New2016] Phone: 617-794-7994 dzapotok at tescan-usa.com www.tescan-usa.com [s8000-02] From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Vlahakis, James Sent: Wednesday, October 11, 2017 5:39 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] sputtering In and Pa Hi everyone, one of our users would like to sputter materials that we are unfamiliar with, indium and palladium. We are considering allowing these materials in our "dirty" sputter tool which has few material restrictions - Au, Ag, Al, Cu, Ge, ITO, Mg, Ni, Ti, Zn and fully cured polymers are allowed. For ITO and Mg we require the users to follow up with an Al sputter for encapsulation. Your advice or comments would be much appreciated Thanks jim -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2388 bytes Desc: image001.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 20377 bytes Desc: image002.jpg URL: From IRHarvey at eng.utah.edu Mon Oct 16 12:10:12 2017 From: IRHarvey at eng.utah.edu (Ian Harvey) Date: Mon, 16 Oct 2017 10:10:12 -0600 Subject: [labnetwork] STS system and problem statement for lab network References: Message-ID: <5C45E657-E44A-4B50-8F76-DDB388441DA3@eng.utah.edu> Dear Labnetwork colleagues, Every so often we run into a tool problem beyond our ability to repair. In this case, we are wondering if anyone can either recommend a tool repair technician for a 2001-vintage STS ASPECT DRIE or if you have an experienced technician we could pay to come here and help us bring it back online. Also, this tool has the anti-footing feature, and we are wondering who in the network has something similar interested in running a (recharge) process for our PI? Thanks, ?Ian Begin forwarded message: From: Steve Pritchett Subject: STS system and problem statement for lab network Date: October 16, 2017 9:57:40 AM MDT To: Ian Harvey Cc: Charles Fisher Hi Ian, STS ASPECT ICP etcher (DRIE) Advanced Silicon Etch Cluster Tool (ASPECT), Year of Manufacture: 2001, Serial Number: C102 Configured with single chamber and Cluster System with Cassette Automation, Brooks VacuTran 5 robot and Vacuum Cassette Elevator VCE 6 With SOI process kit upgrade. Problems: Interlock LED on ICP electronics rack showing "clamp on?. ElectroGrip DR4 ESC control is in clamp off state with 0 volts output to ESC. Results in "clamp fault? just before He LUR test at start of process. When the dealer PC is reset, the robot is homed. But theta and Z positions appear offset from true home. After a power off/on cycle of the robot and home command from hand control, the robot homes to the true home positions. Operator station commands to transfer a wafer from cassette to ICP fails, halting the robot endeffector within the VCE and dealer PC shows communication error from VT5. Intermittently the VCE stops responding and does not actually re-home or map cassette. An error is not reported but the load station controls are inactive on the operator station window. Thanks, Steve -------------- next part -------------- An HTML attachment was scrubbed... URL: From diadiuk at mit.edu Mon Oct 16 13:57:39 2017 From: diadiuk at mit.edu (Vicky Diadiuk) Date: Mon, 16 Oct 2017 17:57:39 +0000 Subject: [labnetwork] TEL tools Message-ID: Hi, Does anybody have Tokyo Electron machines in a shared facility? If so, can they be made to accept wafers & samples smaller than 8? (e.g. by using handle-wafers)? Any insights would be highly appreciated. Thx, Vicky Dr. Vicky Diadiuk Associate Director, Fab Operations Microsystems Technology Laboratories Massachusetts Institute of Technology Room 39-219 Cambridge, MA 02139 Tel: 617-253-0731 diadiuk at mit.edu http://www.mtl.mit.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: smime.p7s Type: application/pkcs7-signature Size: 1845 bytes Desc: not available URL: From cekendri at mtu.edu Mon Oct 16 16:10:42 2017 From: cekendri at mtu.edu (Chito Kendrick) Date: Mon, 16 Oct 2017 16:10:42 -0400 Subject: [labnetwork] ALD of Iron oxide Message-ID: Dear Labnetwork colleagues, I have a user that wants to study iron oxide using our home/custom build ALD. Currently it is still going under optimization for HfO2 as I just got it running a month ago. Our system would have the capabilities to run some of the lesser hazardous precursors, but I was wanting to know if anyone has experience with doing ALD of FeOx and if there are any major issues to look out for, e.g. contamination, build up of toxic by products. The user only wants to study samples with 1-2 ML depositions with water as the oxidizer. Regards. Chito Kendrick -- Chito Kendrick Ph.D. Managing Director of the Microfabrication Facility Research Assistant Professor Electrical and Computer Engineering Michigan Technological University Room 436 M&M Building 1400 Townsend Dr. Houghton, Michigan 49931-1295 814-308-4255 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mweiler at andrew.cmu.edu Mon Oct 16 17:19:33 2017 From: mweiler at andrew.cmu.edu (Mark Weiler) Date: Mon, 16 Oct 2017 21:19:33 +0000 Subject: [labnetwork] STS system and problem statement for lab network In-Reply-To: <5C45E657-E44A-4B50-8F76-DDB388441DA3@eng.utah.edu> References: <5C45E657-E44A-4B50-8F76-DDB388441DA3@eng.utah.edu> Message-ID: Hi Ian, Please reach out to Jeff Hawks? He is helping us to overcome some issues with ours. He also upgrades STS systems. Jeff Hawks Hawks Technical Services LLC. 2715 Swamp Creek Rd. Green Lane, PA. 18054 C 215-872-0944 Best regards, Mark ________________________________________________________________ Mark Weiler Fab Equipment Manager CMU Nanofabrication Facility Dept. of Electrical & Computer Engineering 5000 Forbes Avenue Pittsburgh, PA 15213 P: 412-268-2471 F: 412-268-4323 www.ece.cmu.edu [cid:2D2E01E3-CEC1-4F48-A845-224D8D7CED12 at wv.cc.cmu.edu] On Oct 16, 2017, at 12:10 PM, Ian Harvey > wrote: Dear Labnetwork colleagues, Every so often we run into a tool problem beyond our ability to repair. In this case, we are wondering if anyone can either recommend a tool repair technician for a 2001-vintage STS ASPECT DRIE or if you have an experienced technician we could pay to come here and help us bring it back online. Also, this tool has the anti-footing feature, and we are wondering who in the network has something similar interested in running a (recharge) process for our PI? Thanks, ?Ian Begin forwarded message: From: Steve Pritchett > Subject: STS system and problem statement for lab network Date: October 16, 2017 9:57:40 AM MDT To: Ian Harvey > Cc: Charles Fisher > Hi Ian, STS ASPECT ICP etcher (DRIE) Advanced Silicon Etch Cluster Tool (ASPECT), Year of Manufacture: 2001, Serial Number: C102 Configured with single chamber and Cluster System with Cassette Automation, Brooks VacuTran 5 robot and Vacuum Cassette Elevator VCE 6 With SOI process kit upgrade. Problems: * Interlock LED on ICP electronics rack showing "clamp on?. ElectroGrip DR4 ESC control is in clamp off state with 0 volts output to ESC. Results in "clamp fault? just before He LUR test at start of process. * When the dealer PC is reset, the robot is homed. But theta and Z positions appear offset from true home. After a power off/on cycle of the robot and home command from hand control, the robot homes to the true home positions. * Operator station commands to transfer a wafer from cassette to ICP fails, halting the robot endeffector within the VCE and dealer PC shows communication error from VT5. * Intermittently the VCE stops responding and does not actually re-home or map cassette. An error is not reported but the load station controls are inactive on the operator station window. Thanks, Steve _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: images.png Type: image/png Size: 720 bytes Desc: images.png URL: From bernard at mtl.mit.edu Mon Oct 16 20:12:08 2017 From: bernard at mtl.mit.edu (Bernard Alamariu) Date: Mon, 16 Oct 2017 20:12:08 -0400 Subject: [labnetwork] ALD of Iron oxide In-Reply-To: References: Message-ID: <9c82e45d-91f9-43b8-e831-745063d4e4d8@mtl.mit.edu> Hello, The Iron Fe is one of the worst contaminants material for Silicon processing. It drastically affects the Breakdown voltage of the PN junctions, and the same for the dielectric breakdown values of the Silicon related dielectrics. I do not know its effect on High K exotic dielectrics, etc. Thanks, Bernard On 10/16/17 4:10 PM, Chito Kendrick wrote: > Dear Labnetwork colleagues, > > I have a user that wants to study iron oxide using our home/custom > build ALD. Currently it is still going under optimization for HfO2 as > I just got it running a month ago. Our system would have the > capabilities to run some of the lesser hazardous precursors, but I was > wanting to know if anyone has experience with doing ALD of FeOx and if > there are any major issues to look out for, e.g. contamination, build > up of toxic by products. The user only wants to study samples with 1-2 > ML depositions with water as the oxidizer. > > Regards. > > Chito Kendrick > > > -- > Chito Kendrick Ph.D. > > Managing Director of the Microfabrication Facility > Research Assistant Professor > Electrical and Computer Engineering > Michigan Technological University > Room 436 M&M Building > 1400 Townsend Dr. > Houghton, Michigan 49931-1295 > > 814-308-4255 > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From philippe.fluckiger at epfl.ch Tue Oct 17 02:22:55 2017 From: philippe.fluckiger at epfl.ch (=?utf-8?B?RmzDvGNraWdlciBQaGlsaXBwZQ==?=) Date: Tue, 17 Oct 2017 06:22:55 +0000 Subject: [labnetwork] TEL tools In-Reply-To: References: Message-ID: <3cdbb2e4803848f1ae1f5fb2248aec1c@rexe.intranet.epfl.ch> Dear Vicky, EPFL has installed a UNITY Me Plasma Etch System with one DRM chamber and one SCCM chamber for etching SiO2 & Si3N4. The DRM chamber is configured for 100mm wafers and the SCCM chamber is configured for 200mm wafers. Robot configuration needs to be changed between 100mm wafers and 200mm wafers. However 100mm wafers & 150mm wafers can be processed in the 200mm SCCM chamber by using pocket wafers (with the robot in the 200mm wafer configuration). The tool was installed this summer and we are building our experience in this matter right now. We will keep you posted. With my very best regards, Philippe Dr Philippe Fl?ckiger Director of Operations http://cmi.epfl.ch/ Phone +41 21 693 6695 From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Vicky Diadiuk Sent: lundi 16 octobre 2017 19:58 To: labnetwork at mtl.mit.edu Subject: [labnetwork] TEL tools Hi, Does anybody have Tokyo Electron machines in a shared facility? If so, can they be made to accept wafers & samples smaller than 8? (e.g. by using handle-wafers)? Any insights would be highly appreciated. Thx, Vicky Dr. Vicky Diadiuk Associate Director, Fab Operations Microsystems Technology Laboratories Massachusetts Institute of Technology Room 39-219 Cambridge, MA 02139 Tel: 617-253-0731 diadiuk at mit.edu http://www.mtl.mit.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From novembre at Princeton.EDU Fri Oct 20 14:00:21 2017 From: novembre at Princeton.EDU (Anthony Novembre Jr.) Date: Fri, 20 Oct 2017 18:00:21 +0000 Subject: [labnetwork] Job Opportunity at Princeton U. Micro/Nanofabrication Laboratory Message-ID: <5F0E8DF192EC06419E5D0A0A567A10ADCB27BC0F@CSGMBX212W.pu.win.princeton.edu> Hello All, Applications are invited from qualified candidates for the position of Director of Research and User Relations for the PRISM Micro and Nanofabrication laboratory (MNFL) and appointed at the rank of Professional Specialist at Princeton University. The MNFL is Princeton's central shared use clean room facility and houses a large complement of tools dedicated to materials fabrication, packaging and processing across all length scales. Successful candidates will participate in a multidisciplinary research and education environment utilizing a wide range of instrumentation available in the MNFL. The role of the Director of Research and User Relations is to be the scientific and technical leader of the facility. Specific duties include: * Working with internal and external users, faculty and PRISM management to develop strategic near and long term research, process, tooling capabilities, thrusts and implementation plans * Developing new education and training modules to support the evolving needs of the facility user base as well as the educational mission of the university * Supervising and managing technical staff members * Assisting with finding and competing for external research/operational funding opportunities for the facility Essential Qualifications: ---Ph.D. in natural sciences or engineering with 5+ years related working experience in an academic cleanroom setting. ---Substantial hands-on experience in all MNFL technology areas including photolithography, nanolithography, metrology, physical vapor deposition, chemical vapor deposition, pattern transfer, and soft material patterning processes. ---Knowledge of safety and health issues concerning cleanroom equipment, operations, and hazardous materials handling and disposal. ---Experience in leadership and staff management. ---Excellent communication skills are required to work and interface with all users of the facility Interested candidates must apply online by visiting: https://puwebp.princeton.edu/AcadHire/apply/index.xhtml and searching for job number #: D-17-PSM-00001. Candidates should submit a cover letter, a resume documenting their experience and skill set, and contact information for 3 or more references. For full consideration, please apply by November 15, 2017. Dr. Anthony Novembre Associate Director Princeton Institute for the Science & Technology of Materials (PRISM) Princeton University, 322 Bowen Hall 70 Prospect Ave., Princeton, NJ 08540 Tel: (609) 258-6855, Fax: (609) 258-1177 novembre at princeton.edu http://www.princeton.edu/prism/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From J.D.Watson at tudelft.nl Mon Oct 23 08:21:42 2017 From: J.D.Watson at tudelft.nl (John Watson) Date: Mon, 23 Oct 2017 12:21:42 +0000 Subject: [labnetwork] Hg probe Message-ID: <5033ABE112FA6B49ABEC13F5C6FCB14C29576810@SRV366.tudelft.net> Dear colleagues, I?m looking into purchasing a table-top mercury probe setup for characterizing dielectric thin films on III-V semiconductors. I?ve never used one of these tools before, but from the suppliers? websites they seem like the perfect tool for the job ? e.g. quick, non-destructive characterization via I-V and C-V with minimal/no fab required. Do any of you have suggestions/real-world experience with these? For instance, does the mercury droplet size inevitably start varying due to particulate contamination? Do particular models have unexpectedly large stray capacitances or leaky mercury-containing lines, etc.? Thanks in advance! John -- John Watson Researcher Microsoft Station Q, Delft Lorentzweg 1 2628CJ Delft The Netherlands -------------- next part -------------- An HTML attachment was scrubbed... URL: From fouad.karouta at anu.edu.au Mon Oct 23 19:33:02 2017 From: fouad.karouta at anu.edu.au (Fouad Karouta) Date: Mon, 23 Oct 2017 23:33:02 +0000 Subject: [labnetwork] Sputtering LiNbO3 Message-ID: Hi all, We had a request to sputter LiNbO3, we don't have the target yet. My question to the network is: Does sputtering LiNbO3 in a multi users sputter system (where we have more than 50 targets) create any concerns with respect to toxicity (related to Li or Nb) or to cross-contamination? Thank you, Fouad Karouta ************************************* Manager ANFF ACT Node Australian National Fabrication Facility Research School of Physics and Engineering L. Huxley Building (#56), Mills Road, Room 4.02 Australian National University ACT 0200, Canberra, Australia Tel: + 61 2 6125 7174 Mob: + 61 451 046 412 Email: fouad.karouta at anu.edu.au http://anff-act.anu.edu.au/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From mmorgan3 at uw.edu Tue Oct 24 09:54:13 2017 From: mmorgan3 at uw.edu (Mark Morgan) Date: Tue, 24 Oct 2017 06:54:13 -0700 Subject: [labnetwork] Experience with CdS and dry etching Message-ID: Greetings all, we have a user that?s interested in putting CdS in our etchers and i am loath to allow it due to its toxicity but i thought i?d poll the group and hear what others have done. Any have experience with dry etching of this material? or experience with this material as part of a process within your etchers but not the primary etch target? Thank you so much for your comments and input. best regards Mark D. Morgan Research Engineer, Washington Nanofabrication Facility (WNF) National Nanotechnology Coordinated Infrastructure (NNCI) University of Washington Fluke Hall 132, Box 352143 (206) 221-6349 mmorgan3 at uw.edu http://www.wnf.washington.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From na2661 at columbia.edu Tue Oct 24 10:26:37 2017 From: na2661 at columbia.edu (Nava Ariel-Sternberg) Date: Tue, 24 Oct 2017 10:26:37 -0400 Subject: [labnetwork] Sputtering LiNbO3 In-Reply-To: References: Message-ID: <008701d34cd4$1a6d6130$4f482390$@columbia.edu> Hi Fouad, This depends on the cleanliness level and applications in your facility. Alkali ions can contaminate and compromise insulating properties of dielectrics. Li is what I would be more worried about. If you have several sputtering systems I would allow LiNbO3 in the less clean one. Thanks, Nava Nava Ariel-Sternberg, Ph.D. Director of CNI Shared Facilities Columbia University 530 w120th st., NY 10027 Room 1015/MC 8903 Office: 212-854-9927 Cell: 201-562-7600 ? From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Fouad Karouta Sent: Monday, October 23, 2017 7:33 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Sputtering LiNbO3 Hi all, We had a request to sputter LiNbO3, we don?t have the target yet. My question to the network is: Does sputtering LiNbO3 in a multi users sputter system (where we have more than 50 targets) create any concerns with respect to toxicity (related to Li or Nb) or to cross-contamination? Thank you, Fouad Karouta ************************************* Manager ANFF ACT Node Australian National Fabrication Facility Research School of Physics and Engineering L. Huxley Building (#56), Mills Road, Room 4.02 Australian National University ACT 0200, Canberra, Australia Tel: + 61 2 6125 7174 Mob: + 61 451 046 412 Email: fouad.karouta at anu.edu.au http://anff-act.anu.edu.au/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From swolcott at uchicago.edu Tue Oct 24 14:31:10 2017 From: swolcott at uchicago.edu (Sally J. Wolcott) Date: Tue, 24 Oct 2017 18:31:10 +0000 Subject: [labnetwork] Seeking Process Engineer @ UChicago Message-ID: The Institute of Molecular Engineering at the University of Chicago seeks a Process Engineer for the Pritzker Nanofabrication Facility (PNF). As the primary function, the process engineer will interface with PNF staff, while providing support on process and equipment related matters. The Process Engineer will aid in developing appropriate training and standard operating procedures for processes and equipment in the PNF as required. Job Responsibilities: - Work with PNF engineers and technical manager to optimize processes to ensure quality, reliability, and documentation of said processes. - Develop new processes as directed in order to improve quality, safety, reliability. - May be required to train users on selected equipment. - Provide routine support of process related ancillary equipment such as wet benches, ovens, spinners etc. - Take ownership of the documentation and recordkeeping of requisite PNF processes including maintaining information regarding said processes on the PNF website or web based repository. - Take initiative of technical investigations where directed including designing experiments, testing, reporting results, and making recommendations to prevent recurrences. - Work with vendors for technical assistance and support. Work with equipment engineers on new equipment installations and assist with startup and acceptance testing. Education: - Bachelor's degree required. - BS or MS in engineering preferred. - Other degrees in combination with relevant experience will be considered. Experience: - Lab experience with hazardous materials/chemicals is required. - Cleanroom-based nano/microfabrication experience is required, experience in lithography, deposition, and etch is strongly preferred. - Expertise in inorganic thin film deposition (evaporation, sputtering, chemical vapor deposition, atomic layer deposition, and high temperature oxidation) preferred. - Proven experience investigating process deviations and developing corrective and preventative actions preferred To apply, please visit the UChicago Jobs Online Employment Site, https://jobopportunities.uchicago.edu/applicants/jsp/shared/Welcome_css.jsp and requisition number 103777. The University of Chicago is an Affirmative Action/Equal Opportunity/Disabled/Veterans Employer and does not discriminate on the basis of race, color, religion, sex, sexual orientation, gender identity, national or ethnic origin, age, status as an individual with a disability, protected veteran status, genetic information, or other protected classes under the law. For additional information please see the University\\'s Notice of Nondiscrimination. Staff Job seekers in need of a reasonable accommodation to complete the application process should call 773-834-1841 or email talentacquisition at uchicago.edu with their request. Please share this posting with anyone you think may be interested. Thanks, Sally Wolcott Business Manager, Pritzker Nanofabrication Facility Institute for Molecular Engineering University of Chicago 5640 South Ellis Avenue, 105C Chicago, IL 60637 Office: 773-834-3548 Mobile: 773-332-1196 swolcott at uchicago.edu pnf.uchicago.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From IRHarvey at eng.utah.edu Tue Oct 24 16:12:12 2017 From: IRHarvey at eng.utah.edu (Ian Harvey) Date: Tue, 24 Oct 2017 14:12:12 -0600 Subject: [labnetwork] Question on managing requests for new materials... Message-ID: <1E415470-BD05-44C7-AB20-BA788C595200@eng.utah.edu> Dear Labnetwork Cleanroom Facilities Managers, One of my favorite labnetwork topics is when folks ask about how to manage the wild requests for exotic materials in their facilities. I wanted to get a sense from trends on Labnetwork and fiddled with it one day. (The 2017 point was YTD in July. This attached graph is not publishable data because it was both subjective and quite likely incomplete.) My question is for a quick ("a or b") from cleanroom facilities managers and perhaps also an invitation to chat by phone, so that I can pick your brains, those of you who either: a) tap into campus OEHS resources to help manage your Hazmats, HPM-using tool design and installation, and new material requests; or b) use in-house staff with specific HPM training and expertise that you would specifically call a "safety specialist or engineer", with roles dominantly outside normal process or tool engineering. Thank you, ?Ian Ian R. Harvey, Ph.D. Associate Director Utah Nanofab at the University of Utah Cleanroom Fabrication and nanoImaging & Surface Analysis 801/585-6162 (voicemail) www.nanofab.utah.edu http://sal.nanofab.utah.edu Micron Technology Foundation Inc., Microscopy Suite Sorenson Molecular Biotechnology Building ? A USTAR Innovation Center 36 South Wasatch Drive Suite 2500 Salt Lake City, Utah 84112-9011 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PastedGraphic-1.pdf Type: application/pdf Size: 28451 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PastedGraphic-2.pdf Type: application/pdf Size: 22517 bytes Desc: not available URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: From bill_flounders at berkeley.edu Wed Oct 25 13:07:51 2017 From: bill_flounders at berkeley.edu (A. William (Bill) FLOUNDERS) Date: Wed, 25 Oct 2017 10:07:51 -0700 Subject: [labnetwork] Question on managing requests for new materials... In-Reply-To: <1E415470-BD05-44C7-AB20-BA788C595200@eng.utah.edu> References: <1E415470-BD05-44C7-AB20-BA788C595200@eng.utah.edu> Message-ID: All, I would like to emphasize the significant difference between inquiries/responses regarding the Health and Safety aspects VS the Materials Control / Cross Contamination aspects of materials processing in our equipment and facilities. Health and Safety experts are tasked with alerting us to the potential hazards of unintentional exposure to the wide range of materials we handle. When a material is hazardous, their first (and best) recommendation is "do not process". We usually do not have the luxury of "just saying no". Therefore, we use engineering controls, guidance from our experienced colleagues, and our best judgement to define best practice to handle safely. Once we have minimized the risk of staff exposure, then we take on the more subtle and complex task of addressing what is the impact of processing that material upon all the other processes in our lab. The Berkely NanoLab has recently developed a new system for categorizing and tracking materials in our lab according to four material classifications. I look forward to describing in more detail at UGIM 2018. Sincerely, Bill Flounders UC Berkeley On Tue, Oct 24, 2017 at 1:12 PM, Ian Harvey wrote: > Dear Labnetwork Cleanroom Facilities Managers, > > One of my favorite labnetwork topics is when folks ask about how to manage > the wild requests for exotic materials in their facilities. > > I wanted to get a sense from trends on Labnetwork and fiddled with it one > day. (The 2017 point was YTD in July. This attached graph is not > publishable data because it was both subjective and quite likely > incomplete.) > > My question is for a quick ("a or b") from cleanroom facilities managers > and perhaps also an invitation to chat by phone, so that I can pick your > brains, those of you who either: > > a) tap into campus OEHS resources to help manage your Hazmats, HPM-using > tool design and installation, and new material requests; > > or > > b) use in-house staff with specific HPM training and expertise that you > would specifically call a "safety specialist or engineer", with roles > dominantly outside normal process or tool engineering. > > Thank you, > > ?Ian > > > > > > > > > Ian R. Harvey, Ph.D. > > Associate Director > Utah Nanofab at the University of Utah > Cleanroom Fabrication and nanoImaging & Surface Analysis > 801/585-6162 <(801)%20585-6162> (voicemail) > www.nanofab.utah.edu > http://sal.nanofab.utah.edu > > Micron Technology Foundation Inc., Microscopy Suite > Sorenson Molecular Biotechnology Building ? A USTAR Innovation Center > > 36 South Wasatch Drive > Suite 2500 > Salt Lake City, Utah 84112-9011 > > > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From bgila at ufl.edu Wed Oct 25 13:37:22 2017 From: bgila at ufl.edu (Brent Gila) Date: Wed, 25 Oct 2017 13:37:22 -0400 Subject: [labnetwork] Experience with CdS and dry etching In-Reply-To: References: Message-ID: Hello Mark, Here is the link to the CDC website with Cd exposure limits. https://urldefense.proofpoint.com/v2/url?u=https-3A__www.atsdr.cdc.gov_csem_csem.asp-3Fcsem-3D6-26po-3D7&d=DwIDaQ&c=pZJPUDQ3SB9JplYbifm4nt2lEVG5pWx2KikqINpWlZM&r=EhqHy4a2rnA5a4ehzWAAfKveFS3lPv3RmQTaTocONM4&m=paqIUb_Y4G_a57SmOlow7d6JiqnQeZVGGx4IN4jjaUU&s=mh1sb9grYAXTukWGeEaK6dkF-3wXmmXVgVFYweJO2mE&e= Since you mentioned toxicity, I assume you are not worried about process cross contamination and more concerned with the tool operator/service engineer.? This is less of a concern if the tool is loadlocked compared to a non loadlocked etch system.? I would estimate the amount of material etched during the process would leave a very small amount of Cd solids in the etch tool so the exposure level would be minimum.? I spent many years doing ZnCdSe epi growth and we wore respirators during chamber cleans/maintenance and kept the area around the tool very clean.? After a service and cleanup, we never had elevated Cd levels in the swipes that were tested. Your waste from the tool (gloves, wipes, chamber cleaning debris, sleeve guards) will all now have trace Cd and the EPA allows up to 1.0ppm of Cd in the waste stream.? So to be safe, all the waste should be bagged up and labeled accordingly, Cd is a RCRA metal. Only Hg has a lower allowable limit of 0.2ppm, so Cd is one of the more restricted RCRA metals to have to deal with. Unfortunately I have no CdS etch experience to further comment. Best Regards, Brent -- Brent P. Gila, PhD. Director, Nanoscale Research Facility 1041 Center Drive University of Florida Gainesville, Florida 32611 Tel:352-273-2245 Fax:352-846-2877 email:bgila at ufl.edu On 10/24/2017 9:54 AM, Mark Morgan wrote: > Greetings all, > > we have a user that?s interested in putting CdS in our etchers and i > am loath to allow it due to its toxicity but i thought i?d poll the > group and hear what others have done. > > Any have experience with dry etching of this material? or experience > with this material as part of a process within your etchers but not > the primary etch target? > > Thank you so much for your comments and input. > > best regards > > > Mark D. Morgan > Research Engineer, Washington Nanofabrication Facility (WNF) > National Nanotechnology Coordinated Infrastructure (NNCI) > University of Washington > Fluke Hall 132, Box 352143 > (206) 221-6349 > mmorgan3 at uw.edu > https://urldefense.proofpoint.com/v2/url?u=http-3A__www.wnf.washington.edu_&d=DwIDaQ&c=pZJPUDQ3SB9JplYbifm4nt2lEVG5pWx2KikqINpWlZM&r=EhqHy4a2rnA5a4ehzWAAfKveFS3lPv3RmQTaTocONM4&m=paqIUb_Y4G_a57SmOlow7d6JiqnQeZVGGx4IN4jjaUU&s=efcbuO4whndOxt30zMcxXSs5gJ4bE5eeBafH1GIGnLE&e= > > > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://urldefense.proofpoint.com/v2/url?u=https-3A__www-2Dmtl.mit.edu_mailman_listinfo.cgi_labnetwork&d=DwICAg&c=pZJPUDQ3SB9JplYbifm4nt2lEVG5pWx2KikqINpWlZM&r=_VzhfR25g4PxV91wRmPaWA&m=5KQHNOe2xyFXbvUWTq1FK8YaMaBhXoabmTe0O6oTgvA&s=XVf2A8V-1nnBWN48Rx4jCwXLbAqxzNCPXDQrTnzWywU&e= -------------- next part -------------- An HTML attachment was scrubbed... URL: From khbeis at uw.edu Fri Oct 27 15:05:36 2017 From: khbeis at uw.edu (Michael Khbeis) Date: Fri, 27 Oct 2017 12:05:36 -0700 Subject: [labnetwork] XeF2 sources Message-ID: Colleagues and Friends, We are trying to source XeF2 for a new SPTS etcher. In the past, I found Pelchem (South Africa) to be the most cost-effective source for XeF2, but I cannot seem to make successful contact despite repeated emails/calls. Can you please recommend sources for XeF2? Thanks, Dr. Michael Khbeis Associate Director, Washington Nanofabrication Facility (WNF) National Nanotechnology Coordinated Infrastructure (NNCI) University of Washington Fluke Hall, Box 352143 (O) 206.543.5101 (F) 206.221.1681 (C) 443.254.5192 khbeis at uw.edu www.wnf.washington.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: smime.p7s Type: application/pkcs7-signature Size: 1350 bytes Desc: not available URL: From spaolini at cns.fas.harvard.edu Fri Oct 27 16:15:47 2017 From: spaolini at cns.fas.harvard.edu (Paolini, Steven) Date: Fri, 27 Oct 2017 20:15:47 +0000 Subject: [labnetwork] XeF2 sources In-Reply-To: References: Message-ID: Dr. Khbeis, Synquest laboratories is a reliable source for XeF2. Their headquarters is in Florida but it's produced in South Africa as well. Lead times can be excessive if you order electronic grade in its own cylinder as I do. Hope this helps. Steve Paolini Principal Equipment Engineer Harvard University Center for Nanoscale Systems 11 Oxford St. Cambridge, MA 02138 617- 496- 9816 spaolini at cns.fas.harvard.edu www.cns.fas.harvard.edu From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Michael Khbeis Sent: Friday, October 27, 2017 3:06 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] XeF2 sources Colleagues and Friends, We are trying to source XeF2 for a new SPTS etcher. In the past, I found Pelchem (South Africa) to be the most cost-effective source for XeF2, but I cannot seem to make successful contact despite repeated emails/calls. Can you please recommend sources for XeF2? Thanks, Dr. Michael Khbeis Associate Director, Washington Nanofabrication Facility (WNF) National Nanotechnology Coordinated Infrastructure (NNCI) University of Washington Fluke Hall, Box 352143 (O) 206.543.5101 (F) 206.221.1681 (C) 443.254.5192 khbeis at uw.edu www.wnf.washington.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From bic at mtl.mit.edu Fri Oct 27 20:07:40 2017 From: bic at mtl.mit.edu (Bob Bicchieri) Date: Fri, 27 Oct 2017 20:07:40 -0400 Subject: [labnetwork] XeF2 sources In-Reply-To: References: Message-ID: <006701d34f80$c4d83bf0$4e88b3d0$@mtl.mit.edu> Hi Michael, They are part of Linde now. Call Jane... Regards, Bob Jane Pike Customer Service, Electronics II Linde Electronics and Specialty Gases, a division of Linde Gas North America LLC 1 Greenwich Street, Suite 100, Stewartsville, NJ 08886 Direct: 908-329-9751 Fax: 866-417-8064 Toll Free: 800-932-0624 From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Michael Khbeis Sent: Friday, October 27, 2017 3:06 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] XeF2 sources Colleagues and Friends, We are trying to source XeF2 for a new SPTS etcher. In the past, I found Pelchem (South Africa) to be the most cost-effective source for XeF2, but I cannot seem to make successful contact despite repeated emails/calls. Can you please recommend sources for XeF2? Thanks, Dr. Michael Khbeis Associate Director, Washington Nanofabrication Facility (WNF) National Nanotechnology Coordinated Infrastructure (NNCI) University of Washington Fluke Hall, Box 352143 (O) 206.543.5101 (F) 206.221.1681 (C) 443.254.5192 khbeis at uw.edu www.wnf.washington.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From kmcpeak at lsu.edu Sat Oct 28 00:19:10 2017 From: kmcpeak at lsu.edu (Kevin McPeak) Date: Fri, 27 Oct 2017 23:19:10 -0500 Subject: [labnetwork] Carbon contamination from Ar Message-ID: Dear Colleagues, In my lab at LSU we are interested in evaporating Au under high Ar pressures, 10 - 50 mTorr. We are using Ar 5.0 purity (99.999%), which has a THC of 1 ppm. Our procedure is such: 1). Pump chamber down to low -7 Torr range 2). Inject 30 SCCM Ar and throttle gate valve to the desired pressure (say 50 mTorr) 3). Increase power to Tungsten boat till Au pellets evaporate When we vent the chamber we notice a lot of carbon deposition near the outlet of the Ar line (see attached image). We have a THC of 1 ppm in the Ar tank. We also tried hooking up a GP-100 gas purifier from RD Mathis. Unfortunately, that didn't solve the problem, still lots of carbon deposition in the chamber. The GP-100 is currently connected upstream from the MFC. I am using SS tubes with all VCR fittings (total length 6 ft). We could move the GP-100 closer to the chamber, post-MFC. Based on the photo I think it is pretty clear that the carbon is coming from the Ar. So my current thought is that either I have a leak in my tubes post GP-100 or I need to flame bake the lines (I have not done this). I am trying to get access to an RGA to investigate this more quantitatively. I do have access to a He checker so I could try pumping on the Ar lines. Have any of you seen Carbon contamination like this before when doing high-pressure evap (I know that is not a normal thing)? I am curious what people think. Thanks! Regards, Kevin -- Kevin M. McPeak Assistant Professor Louisiana State University Dept. of Chemical Engineering 110 Chemical Engineering Bldg Room 324 S. Stadium Drive Baton Rouge, LA 70803 email: kmcpeak at lsu.edu phone: 225-578-0058 -------------- next part -------------- A non-text attachment was scrubbed... Name: mcpeak_PVD_Ar_Carbon_Contaminants.png Type: image/png Size: 534998 bytes Desc: not available URL: From myoung6 at nd.edu Sat Oct 28 10:58:05 2017 From: myoung6 at nd.edu (Mike Young) Date: Sat, 28 Oct 2017 10:58:05 -0400 Subject: [labnetwork] Carbon contamination from Ar In-Reply-To: References: Message-ID: <0467ebb4-7ac4-0ea7-26a6-56d89319533f@nd.edu> Hi Kevin. Have you confirmed the deposits are in fact carbon? Scrape some off and perfom EDX in a SEM, for example? --Mike On 10/28/2017 12:19 AM, Kevin McPeak wrote: > Dear Colleagues, > > In my lab at LSU we are interested in evaporating Au under high Ar > pressures, 10 - 50 mTorr. We are using Ar 5.0 purity (99.999%), which > has a THC of 1 ppm. > > Our procedure is such: > > 1). Pump chamber down to low -7 Torr range > 2). Inject 30 SCCM Ar and throttle gate valve to the desired pressure > (say 50 mTorr) > 3). Increase power to Tungsten boat till Au pellets evaporate > > When we vent the chamber_*we notice a lot of carbon deposition*_ near the > outlet of the Ar line (see attached image). We have a THC of 1 ppm in > the Ar tank. We also tried hooking up a GP-100 gas purifier from RD > Mathis. Unfortunately, that didn't solve the problem, still lots of > carbon deposition in the chamber. The GP-100 is currently connected > upstream from the MFC. I am using SS tubes with all VCR fittings > (total length 6 ft). We could move the GP-100 closer to the chamber, > post-MFC. > > Based on the photo I think it is pretty clear that the carbon is > coming from the Ar. So my current thought is that either I have a leak > in my tubes post GP-100 or I need to flame bake the lines (I have not > done this). I am trying to get access to an RGA to investigate this > more quantitatively. I do have access to a He checker so I could try > pumping on the Ar lines. > > Have any of you seen Carbon contamination like this before when doing > high-pressure evap (I know that is not a normal thing)? I am curious > what people think. Thanks! > > Regards, > Kevin > -- Michael P. Young (574) 631-3268 (office) Nanofabrication Specialist (574) 631-4393 (fax) Department of Electrical Engineering (765) 637-3784 (cell) University of Notre Dame mike.young at nd.edu B-38 Stinson-Remick Hall Notre Dame, IN 46556-5637 -------------- next part -------------- An HTML attachment was scrubbed... URL: From kmcpeak at lsu.edu Sat Oct 28 11:03:05 2017 From: kmcpeak at lsu.edu (Kevin McPeak) Date: Sat, 28 Oct 2017 10:03:05 -0500 Subject: [labnetwork] Carbon contamination from Ar In-Reply-To: <0467ebb4-7ac4-0ea7-26a6-56d89319533f@nd.edu> References: <0467ebb4-7ac4-0ea7-26a6-56d89319533f@nd.edu> Message-ID: Dear Mike, That is a good point. We should totally do that and will. What else do you think this black stuff could be? Regards, Kevin -- Kevin McPeak Assistant Professor Department of Chemical Engineering Louisiana State University email: kmcpeak at lsu.edu phone: 225-578-0058 On Oct 28, 2017 09:58, "Mike Young" wrote: > Hi Kevin. Have you confirmed the deposits are in fact carbon? Scrape some > off and perfom EDX in a SEM, for example? > > --Mike > > On 10/28/2017 12:19 AM, Kevin McPeak wrote: > > Dear Colleagues, > > In my lab at LSU we are interested in evaporating Au under high Ar > pressures, 10 - 50 mTorr. We are using Ar 5.0 purity (99.999%), which > has a THC of 1 ppm. > > Our procedure is such: > > 1). Pump chamber down to low -7 Torr range > 2). Inject 30 SCCM Ar and throttle gate valve to the desired pressure > (say 50 mTorr) > 3). Increase power to Tungsten boat till Au pellets evaporate > > When we vent the chamber *we notice a lot of carbon deposition* near the > outlet of the Ar line (see attached image). We have a THC of 1 ppm in > the Ar tank. We also tried hooking up a GP-100 gas purifier from RD > Mathis. Unfortunately, that didn't solve the problem, still lots of > carbon deposition in the chamber. The GP-100 is currently connected > upstream from the MFC. I am using SS tubes with all VCR fittings > (total length 6 ft). We could move the GP-100 closer to the chamber, > post-MFC. > > Based on the photo I think it is pretty clear that the carbon is > coming from the Ar. So my current thought is that either I have a leak > in my tubes post GP-100 or I need to flame bake the lines (I have not > done this). I am trying to get access to an RGA to investigate this > more quantitatively. I do have access to a He checker so I could try > pumping on the Ar lines. > > Have any of you seen Carbon contamination like this before when doing > high-pressure evap (I know that is not a normal thing)? I am curious > what people think. Thanks! > > Regards, > Kevin > > > > -- > Michael P. Young (574) 631-3268 (office) > Nanofabrication Specialist (574) 631-4393 (fax) > Department of Electrical Engineering (765) 637-3784 (cell) > University of Notre Dame mike.young at nd.edu > B-38 Stinson-Remick Hall > Notre Dame, IN 46556-5637 > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From chenyl at mail.sustc.edu.cn Sat Oct 28 12:02:02 2017 From: chenyl at mail.sustc.edu.cn (Yulong Chen) Date: Sun, 29 Oct 2017 00:02:02 +0800 Subject: [labnetwork] =?utf-8?b?5Zue5aSNOiBSZTogIENhcmJvbiBjb250YW1pbmF0?= =?utf-8?q?ion_from_Ar?= In-Reply-To: References: <0467ebb4-7ac4-0ea7-26a6-56d89319533f@nd.edu> Message-ID: <1509206521033.4j3vm24csy15srli0yzygol1@android.mail.163.com>+B8ED9FAB9E916800 Dear Kevin Under high pressure, gold film from black gold (porous) Maybe it's black gold, you can simply identify it by use KI/I2 gold ethant. Regards ???(CHEN Yulong) ??????/???/???????? ??????????1088? ?2017?10?28? 23:03 ?Kevin McPeak??? Dear Mike, That is a good point. We should totally do that and will. What else do you think this black stuff could be? Regards, Kevin -- Kevin McPeak Assistant Professor Department of Chemical Engineering Louisiana State University email: kmcpeak at lsu.edu phone: 225-578-0058 On Oct 28, 2017 09:58, "Mike Young" wrote: Hi Kevin. Have you confirmed the deposits are in fact carbon? Scrape some off and perfom EDX in a SEM, for example? --Mike On 10/28/2017 12:19 AM, Kevin McPeak wrote: Dear Colleagues, In my lab at LSU we are interested in evaporating Au under high Ar pressures, 10 - 50 mTorr. We are using Ar 5.0 purity (99.999%), which has a THC of 1 ppm. Our procedure is such: 1). Pump chamber down to low -7 Torr range 2). Inject 30 SCCM Ar and throttle gate valve to the desired pressure (say 50 mTorr) 3). Increase power to Tungsten boat till Au pellets evaporate When we vent the chamber we notice a lot of carbon deposition near the outlet of the Ar line (see attached image). We have a THC of 1 ppm in the Ar tank. We also tried hooking up a GP-100 gas purifier from RD Mathis. Unfortunately, that didn't solve the problem, still lots of carbon deposition in the chamber. The GP-100 is currently connected upstream from the MFC. I am using SS tubes with all VCR fittings (total length 6 ft). We could move the GP-100 closer to the chamber, post-MFC. Based on the photo I think it is pretty clear that the carbon is coming from the Ar. So my current thought is that either I have a leak in my tubes post GP-100 or I need to flame bake the lines (I have not done this). I am trying to get access to an RGA to investigate this more quantitatively. I do have access to a He checker so I could try pumping on the Ar lines. Have any of you seen Carbon contamination like this before when doing high-pressure evap (I know that is not a normal thing)? I am curious what people think. Thanks! Regards, Kevin -- Michael P. Young (574) 631-3268 (office) Nanofabrication Specialist (574) 631-4393 (fax) Department of Electrical Engineering (765) 637-3784 (cell) University of Notre Dame mike.young at nd.edu B-38 Stinson-Remick Hall Notre Dame, IN 46556-5637 -------------- next part -------------- An HTML attachment was scrubbed... URL: