[labnetwork] ALD of Iron oxide
Bernard Alamariu
bernard at mtl.mit.edu
Mon Oct 16 20:12:08 EDT 2017
Hello,
The Iron Fe is one of the worst contaminants material for Silicon
processing.
It drastically affects the Breakdown voltage of the PN junctions, and
the same
for the dielectric breakdown values of the Silicon related dielectrics.
I do not know its effect on High K exotic dielectrics, etc.
Thanks, Bernard
On 10/16/17 4:10 PM, Chito Kendrick wrote:
> Dear Labnetwork colleagues,
>
> I have a user that wants to study iron oxide using our home/custom
> build ALD. Currently it is still going under optimization for HfO2 as
> I just got it running a month ago. Our system would have the
> capabilities to run some of the lesser hazardous precursors, but I was
> wanting to know if anyone has experience with doing ALD of FeOx and if
> there are any major issues to look out for, e.g. contamination, build
> up of toxic by products. The user only wants to study samples with 1-2
> ML depositions with water as the oxidizer.
>
> Regards.
>
> Chito Kendrick
>
>
> --
> Chito Kendrick Ph.D. <https://sites.google.com/site/chitokendrickphd/>
>
> Managing Director of the Microfabrication Facility
> Research Assistant Professor
> Electrical and Computer Engineering
> Michigan Technological University
> Room 436 M&M Building
> 1400 Townsend Dr.
> Houghton, Michigan 49931-1295
>
> 814-308-4255
>
>
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