[labnetwork] Etching III-V and Al/Cr

[Fouad Karouta]

Dear colleagues,

I am looking for information regarding using a same ICP-RIE etcher to do etching of III-V semiconductors (processes like BCl3:Cl2:Ar, SiCl4:Ar, Cl2:Ar:H2, etc.) along etching some metals like Cr (Cl2:O2) or Al (BCl3). 
Our core business is III-V materials and we are keen to keep the integrity of the machine with respect to this type of processing: etching waveguides and nano-pillars (aspect ratio of 10:1 or higher) and Knowing that etching AlGaAs/AlAs layers is authorised in the system I like to know your experience with etching pure metals like Al or Cr in the same system along III-V and whether the metal etching may cause any reproducibility issues.
Your feedback is much appreciated!

Regards, 
Fouad Karouta

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Manager ANFF ACT Node
Australian National Fabrication Facility
Research School of Physics and Engineering
L. Huxley Building (#56), Mills Road, Room 4.02
Australian National University
ACT 2601, Canberra, Australia
Tel: + 61 2 6125 7174
Mob: + 61 451 046 412
Email: fouad.karouta at anu.edu.au 
http://anff-act.anu.edu.au