From savithap at iisc.ac.in Fri Feb 1 06:53:56 2019 From: savithap at iisc.ac.in (Savitha P) Date: Fri, 1 Feb 2019 11:53:56 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA Message-ID: Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: From nnelsonfitzpatrick at uwaterloo.ca Fri Feb 1 09:31:12 2019 From: nnelsonfitzpatrick at uwaterloo.ca (Nathan Nelson - Fitzpatrick) Date: Fri, 1 Feb 2019 14:31:12 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA Message-ID: <58592D0F-F29E-49BA-A7C7-3B824125E973@uwaterloo.ca> Hi Savitha, I have seen and experienced this issue before. My understanding is that the PMMA is blistering due to electrons impinging on your sample, over-dosing the PMMA. When I experienced this issue on my tool I did some searching online and found this report that correlated carbon in the Au melt to an increased current of electrons scattering off of the melt and into the sample. http://www.skyworksinc.com/downloads/press_room/published_articles/GaAs_Mantech_052010_6.pdf In my case I supposed that the likely source of the carbon was from the FABMATE crucible liner our lab was using for our Gold evaporation process. The liner?s glassy finish appeared to be wearing down due to handling and was likely leaving a small amount of carbon dust on the melt every time it was added or removed from our evaporator. I was able to fix our issue by taking the gold melt out of our old FABMATE liner, cleaning the carbon dust off of the ingot with some IPA and putting it back in a new FABMATE liner. Once the ingot was cleaned and put into a new liner the surface of the melt looked appreciably different. When contaminated with carbon it appeared to have a ?skin? on the top of the melt, while the clean melt has a uniform ?liquid-like? appearance. FYI: I have recently moved on to a Molybdenum liner as described in this Materion report, the downside with this is that the Gold wets the liner surface and will likely be difficult to reclaim if/when I have to do so. https://materion.com/-/media/files/advanced-materials-group/me/technicalpapers/developingafundamentalunderstandingofgoldspitting.pdf?la=en&hash=502E7BF53ECF2EE5923F4B5F7488A78B3B2ED05F Feel free to reach out if you want to discuss this problem further. Best regards, -Nathan -- Nathan Nelson-Fitzpatrick PhD Nanofabrication Process & Characterization Engineering Manager Quantum-Nano Fabrication and Characterization Facility (QNFCF) Office of Research University of Waterloo 200 University Avenue West, Waterloo, ON N2L 3G1 P: 519-888-4567 ext. 31796 C: 226-218-3206 https://fab.qnc.uwaterloo.ca [/Users/nnelsonf/Desktop/university-of-waterloo-logo-esig.png] From: on behalf of Savitha P Date: Friday, February 1, 2019 at 8:58 AM To: "labnetwork at mtl.mit.edu" Subject: [labnetwork] Blistering of metal film stack on PMMA Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.png Type: image/png Size: 11994 bytes Desc: image001.png URL: From ngottron at andrew.cmu.edu Fri Feb 1 09:49:16 2019 From: ngottron at andrew.cmu.edu (Norman Gottron) Date: Fri, 1 Feb 2019 14:49:16 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: References: Message-ID: <2f4890bd75214f5ebc55ea28613e8bfb@andrew.cmu.edu> Hi Savitha, Have you checked the temperature of the substrate? That's one thing to check, but I suspect the issue is with exposure to electrons, particularly if regular lithographic resists are performing ok. We saw a nearly identical issue with PMMA in our evaporator and it was solved by the installation of a permanent magnet to capture more of the electrons that are (perhaps) straying from the gun. The difference was night and day (see images below). Before magnet installation (100nm Ti dep on PMMA-coated wafer): [cid:image001.png at 01D4BA13.640D86A0] After magnet installation (100nm Ti on PMMA coated wafer): [cid:image002.png at 01D4BA13.640D86A0] Hope this helps, and if you've already investigated a host of issues, this might be the only remaining one. Regards, Norman Gottron Process Engineer, Carnegie Mellon University Nanofabrication Facility Electrical and Computer Engineering | Carnegie Mellon University 5000 Forbes Ave Pittsburgh, PA 15213 Phone: 412-268-4205 www.ece.cmu.edu www.nanofab.ece.cmu.edu From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Savitha P Sent: Friday, February 01, 2019 6:54 AM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Blistering of metal film stack on PMMA Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.png Type: image/png Size: 400762 bytes Desc: image001.png URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.png Type: image/png Size: 378827 bytes Desc: image002.png URL: From mtang at stanford.edu Fri Feb 1 12:53:51 2019 From: mtang at stanford.edu (Mary Tang) Date: Fri, 1 Feb 2019 09:53:51 -0800 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: References: Message-ID: <74c7d9d9-0304-1134-2f42-01e6e26cf71d@stanford.edu> Hi Savitha -- I agree with Norman and Nathan, as controlling the temperature and bombardment of your substrate should address the blistering problem.? I'd like to add that your question reminds me of some really cool tricks with PMMA that I've learned from one of our most esteemed researchers, Jim Kruger (who is retired for the second time, but still comes around to share valuable nuggets.) Optical resists generally harden and carbonize at higher temperatures and with ion bombardment.? However, PMMA undergoes thermal decomposition starting around 300 C, attributed to depolymerization from chain ends.? And at around 400 C, thermal decomposition happens regardless of chain length, due to random scission.? Interestingly, good quality PMMA leaves no residue on when heated briefly to 400-450 C.? This makes it a really handy method for bonding chips, if your samples can tolerate the heat. Also, it turns out that xrays from Ebeam evaporation will fully expose PMMA.? This means you can use ordinary PMMA developer for lift off.? This opens up LOADS of possibilities for processing because you can pattern with optical resist and PMMA and selectively develop or lift-off one versus the other, using the appropriate developer. If anyone else has done this or has cool tricks to add, I'd love to hear about it. Cheers - Mary -- Mary X. Tang, Ph.D. Managing Director Stanford Nanofabrication Facility Paul G. Allen Building, Rm 141 420 Via Palou Mall Stanford, CA 94305 (650)723-9980 mtang at stanford.edu https://snf.stanford.edu On 2/1/2019 3:53 AM, Savitha P wrote: > > Hello! > > > We need inputs deposition of metal film stack on PMMA coated > substrates. We see blisters on the PMMA which creates problems during > lifting off process. > > > We are using a Leybold UNIVEX400 E-Beam Evaporator. > > > For a stack deposition?of metals, example Cr/Au (10/50 nm) > > the film on Si and SiO2 substrate is smooth with good resistivity > value.The film deposited on optical lithography patterned samples > also? give good lift off and the appearance of metal film on resist is > smooth and usual. > > Whereas, for a film stack deposition on e-beam lithography patterned > samples, the metal on the PMMA resist becomes?completely blistered. > The lift off is not clean, leaving behind random patches of metal over > resist on the substrate even after?longer duration in solvents. > > > Few tool and process?details: > > Source to substrate distance- Minimum 20 cm and Maximum 35 cms. > Blisters observed for both the distances. > > Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s > > Base Pressure around?2 E-06 Torr > > Deposition at room temperature > > OPL resists used (AZ 5214E, S 1813, AZ 4562) > > EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) > > > We have already tried different baking times for PMMA, different > deposition rates,? wait times between depositions and also grounding > the substrate. > > > Please let us know if anyone has an idea on how to solve this. > > > With best wishes, > > > Savitha > > > > Dr. Savitha P > Chief Operating Officer > National Nanofabrication Centre > Centre for Nanoscience and Engineering > Indian Institute of Science > Bangalore - 560012 > India. > Ph. +91 80 2293 3319 > www.cense.iisc.ac.in > /**Please note the change in my e-mail id**/ > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Building, Rm 141 420 Via Palou Mall Stanford, CA 94305 (650)723-9980 mtang at stanford.edu https://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From geoff at purdue.edu Fri Feb 1 14:06:29 2019 From: geoff at purdue.edu (Gardner, Geoffrey C) Date: Fri, 1 Feb 2019 19:06:29 +0000 Subject: [labnetwork] Microsoft Quantum UHV-Engineer Position Message-ID: <803d1ad6b505445d882a276e0e86e1e2@wppexc02.purdue.lcl> Dear colleagues, The Microsoft Quantum program currently has job openings which may be of interest to this network. The posting is for a Senior UHV Hardware and Mechanical Engineer. The full job description is available at the link below: https://careers.microsoft.com/us/en/job/577502/Senior-UHV-Hardware-Mechanical-Engineer?rt=professional This posting represents multiple positions. If you know of any candidates who may be interested in this posting, I would appreciate it if you would forward to them. Kind regards, Geoff Geoffrey C Gardner Research Associate, Microsoft Research Visiting Scholar, Purdue University Birck Nanotechnology Center 1205 West State Street West Lafayette, IN 47907 (765) 494-3458 (office) -------------- next part -------------- An HTML attachment was scrubbed... URL: From dbarth at Princeton.EDU Fri Feb 1 17:01:52 2019 From: dbarth at Princeton.EDU (David S Barth) Date: Fri, 1 Feb 2019 22:01:52 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: References: Message-ID: <2E4211614412C7468C65D030D128F70C2BE28585@csgmbx215w> Hi Savitha, As others have mentioned, this is mainly caused by electron damage to the PMMA. Here is another paper that addresses the issue with an interesting solution: https://csmantech.org/OldSite/Digests/1999/PDF/54.pdf. Depending on how your chamber is set up, I have one other suggestion that has not been mentioned yet. In our evaporator, we have a short throw distance and a shutter only near the sample, not at the crucible. We found that damage was occurring before the shutter was even opened. Electron scattering from solid metal is much more than from liquid, so we believe that the flux of scattered electrons during the initial melt steps was high enough that electrons would go around the shutter and still damage the sample. We put a metal shielding ring in place around the samples to prevent this (shown in the attached pictures), and you can see the difference between samples inside and outside of the shield. Best, David From: labnetwork-bounces at mtl.mit.edu On Behalf Of Savitha P Sent: Friday, February 1, 2019 6:54 AM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Blistering of metal film stack on PMMA Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: evaporator shield inside.jpg Type: image/jpeg Size: 301950 bytes Desc: evaporator shield inside.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: evaporator shield outside.jpg Type: image/jpeg Size: 258301 bytes Desc: evaporator shield outside.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: evaporator shield setup.jpg Type: image/jpeg Size: 426013 bytes Desc: evaporator shield setup.jpg URL: From mondol at mit.edu Fri Feb 1 17:16:12 2019 From: mondol at mit.edu (Mark K Mondol) Date: Fri, 1 Feb 2019 17:16:12 -0500 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: <74c7d9d9-0304-1134-2f42-01e6e26cf71d@stanford.edu> References: <74c7d9d9-0304-1134-2f42-01e6e26cf71d@stanford.edu> Message-ID: <2ed0971e-7214-0f9f-c239-7766fe9eb074@mit.edu> Mary, Norman and Nathan all have good points. Here are my two paise's worth of advice: It would be nice to have the substrate farther away from the source. It would also be nice to have a second shutter (close to the substrate and not blocking the deposition sensor) so the substrate is not getting heated during the warming of the source. You probably don't have the ability to change those things though. Norman is correct that a magnet can deflect stray electrons and might be the solution for you. In the NanoStructures Lab we don't use crucibles except for Cu and SiOx, thereby eliminating Carbon contamination. Anecdotally, it seems that some evaporators generate enough Xrays to expose PMMA and some don't, well the Xrays are probably generated but aren't emitted in a direction that exposes PMMA. Any wavelength shorter than 220nm will expose PMMA, we use an old UV aligner to flood expose PMMA for a variety of processes. I guess I would try to see if it is heat that is the problem by evaporating 10nm of Au to find out if it works with shorter evaporations. If heating is the problem see the two solutions at the top, or try to install a cooler behind your substrate. You might also find an evaporation recipe that uses a shorter or less powerful soak step to reduce heat. Possibly a different position on your holder might help, but anything that is not directly above the source will make for more difficult liftoff. Regards, Mark K Mondol -- Mark K Mondol Assistant Director NanoStructures Laboratory And Facility Manager Scanning Electron Beam Lithography Facility Bldg 36 Room 229 www.rle.mit.edu/sebl mondol at mit.edu office - 617-253-9617 cell - 617-224-8756 From W.Albrecht at fz-juelich.de Sat Feb 2 12:42:38 2019 From: W.Albrecht at fz-juelich.de (Albrecht, Wolfgang) Date: Sat, 2 Feb 2019 17:42:38 +0000 Subject: [labnetwork] WG: Blistering of metal film stack on PMMA in Univex 400 In-Reply-To: References: Message-ID: Hi Savitha We have a Univex 400 and know the problem. We found that the bomdardment mentioned before was the reason. The Univex 400 are usually supplied by Leybold with either terratec or ferrotec evaporators. We talked to Ferrotec and Terratec about the problem. Ferrotec offers now a magnetic trap for the sources. Since then blistering is gone. As far as I know, terratec is also working on a magnetic trap. Hope this helps Wolfgang Wolfgang Albrecht Director Helmholtz Nano Facility Forschungszentrum Juelich Leo-Brandt Stra?e 52425 J?lich Tel.: + 49 2461 61 6364 Fax: +49 2461 61 96418 Email: w.albrecht at fz-juelich.de http://www.hnf.fz-juelich.de ------------------------------------------------------------------------------------------------ ------------------------------------------------------------------------------------------------ Forschungszentrum Juelich GmbH 52425 Juelich Sitz der Gesellschaft: Juelich Eingetragen im Handelsregister des Amtsgerichts Dueren Nr. HR B 3498 Vorsitzender des Aufsichtsrats: MinDir Dr. Karl Eugen Huthmacher Geschaeftsfuehrung: Prof. Dr.-Ing. Wolfgang Marquardt (Vorsitzender), Karsten Beneke (stellv. Vorsitzender), Prof. Dr.-Ing. Harald Bolt, Prof. Dr. Sebastian M. Schmidt ------------------------------------------------------------------------------------------------ ------------------------------------------------------------------------------------------------ From mcwilliamss at mail.smu.edu Sat Feb 2 16:00:36 2019 From: mcwilliamss at mail.smu.edu (McWilliams, Scott) Date: Sat, 2 Feb 2019 21:00:36 +0000 Subject: [labnetwork] Silicon to InGaAs selective wet etch Message-ID: <42c9ba3e6eb24a0ca2533877dd678494@mail.smu.edu> Hello All, I am looking for a wet etch that will etch sputtered silicon and not etch InP or InGaAs. I do not know the exact composition of the InGaAs, but it is a zinc doped contact layer for a laser diode. I did try some published silicon etchants at various ratios (all at nominal room temperature) of PAN etch, or acidic/nitride/HF, but they etched the InGaAs a bit too fast. I could not find online any information about silicon to InGaAs selectivity, I would appreciate any input if you have experience in this (I'm trying to avoid dry etching this). Thank you, Scott McWilliams Lab Manager SMU -------------- next part -------------- An HTML attachment was scrubbed... URL: From W.Albrecht at fz-juelich.de Sat Feb 2 18:08:37 2019 From: W.Albrecht at fz-juelich.de (Albrecht, Wolfgang) Date: Sat, 2 Feb 2019 23:08:37 +0000 Subject: [labnetwork] WG: Blistering of metal film stack on PMMA in Univex 400 Message-ID: Hi Bernd, we assumed that secondary or stray electrons cause the effect. A measurement of the resist temperature during evaporation is complicated and we failed, but cooling the samples helps. There is a tendency that the effect increases with lowering the deposition rates. With a self-made magnetic trap we were able to drastically reduce the blistering. As it was a new device, we complained to Leybold and Ferrotec. Both were not aware of the effect. Ferrotec understood the problem and retrofitted the sources with magnetic traps. Since we had the same effect in another system (Balzers PLS 570) lowering the deposition rates, we also retrofitted the magnetic traps there. Best Regards Wolfgang Wolfgang Albrecht Director Helmholtz Nano Facility Forschungszentrum Juelich Leo-Brandt Stra?e 52425 J?lich Tel.: + 49 2461 61 6364 Fax: +49 2461 61 96418 Email: w.albrecht at fz-juelich.de http://www.hnf.fz-juelich.de ------------------------------------------------------------------------------------------------ ------------------------------------------------------------------------------------------------ Forschungszentrum Juelich GmbH 52425 Juelich Sitz der Gesellschaft: Juelich Eingetragen im Handelsregister des Amtsgerichts Dueren Nr. HR B 3498 Vorsitzender des Aufsichtsrats: MinDir Dr. Karl Eugen Huthmacher Geschaeftsfuehrung: Prof. Dr.-Ing. Wolfgang Marquardt (Vorsitzender), Karsten Beneke (stellv. Vorsitzender), Prof. Dr.-Ing. Harald Bolt, Prof. Dr. Sebastian M. Schmidt ------------------------------------------------------------------------------------------------ ------------------------------------------------------------------------------------------------ From myoung6 at nd.edu Sun Feb 3 17:47:15 2019 From: myoung6 at nd.edu (Mike Young) Date: Sun, 3 Feb 2019 17:47:15 -0500 Subject: [labnetwork] Silicon to InGaAs selective wet etch In-Reply-To: <42c9ba3e6eb24a0ca2533877dd678494@mail.smu.edu> References: <42c9ba3e6eb24a0ca2533877dd678494@mail.smu.edu> Message-ID: KOH-based etchant perhaps? --Mike On 2/2/2019 4:00 PM, McWilliams, Scott wrote: > > Hello All, > > I am looking for a wet etch that will etch sputtered silicon and not > etch InP or InGaAs.? I do not know the exact composition of the > InGaAs, but it is a zinc doped contact layer for a laser diode.? I did > try some published silicon etchants at various ratios (all at nominal > room temperature) of PAN etch, or acidic/nitride/HF, but they etched > the InGaAs a bit too fast. > > I could not find online any information about silicon to InGaAs > selectivity, I would appreciate any input if you have experience in > this (I?m trying to avoid dry etching this). > > Thank you, > > Scott McWilliams > > Lab Manager > > SMU > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- Michael P. Young (574) 631-3268 (office) Nanofabrication Specialist (574) 631-4393 (fax) Department of Electrical Engineering (765) 637-3784 (cell) University of Notre Dame mike.young at nd.edu B-38 Stinson-Remick Hall Notre Dame, IN 46556-5637 -------------- next part -------------- An HTML attachment was scrubbed... URL: From myoung6 at nd.edu Sun Feb 3 17:49:59 2019 From: myoung6 at nd.edu (Mike Young) Date: Sun, 3 Feb 2019 17:49:59 -0500 Subject: [labnetwork] WG: Blistering of metal film stack on PMMA in Univex 400 In-Reply-To: References: Message-ID: <4f155ae1-fe72-50e2-194f-ac1792d6946d@nd.edu> Would anyone like to describe their "self-made" magnetic traps? I'm having trouble envisioning what these might look like. Thanks! --Mike On 2/2/2019 6:08 PM, Albrecht, Wolfgang wrote: > Hi Bernd, > > we assumed that secondary or stray electrons cause the effect. A measurement of the resist temperature during evaporation is complicated and we failed, but cooling the samples helps. There is a tendency that the effect increases with lowering the deposition rates.*With a self-made magnetic trap we were able to drastically reduce the > blistering*. As it was a new device, we complained to Leybold and Ferrotec. Both were not aware of the effect. Ferrotec understood the problem and retrofitted the sources with magnetic traps. Since we had the same effect in another system (Balzers PLS 570) lowering the deposition rates, we also retrofitted the magnetic traps there. > > Best Regards > > Wolfgang > > Wolfgang Albrecht > Director Helmholtz Nano Facility > > Forschungszentrum Juelich > Leo-Brandt Stra?e > 52425 J?lich > Tel.: + 49 2461 61 6364 > Fax: +49 2461 61 96418 > Email: w.albrecht at fz-juelich.de > http://www.hnf.fz-juelich.de > > > ------------------------------------------------------------------------------------------------ > ------------------------------------------------------------------------------------------------ > Forschungszentrum Juelich GmbH > 52425 Juelich > Sitz der Gesellschaft: Juelich > Eingetragen im Handelsregister des Amtsgerichts Dueren Nr. HR B 3498 > Vorsitzender des Aufsichtsrats: MinDir Dr. Karl Eugen Huthmacher > Geschaeftsfuehrung: Prof. Dr.-Ing. Wolfgang Marquardt (Vorsitzender), > Karsten Beneke (stellv. Vorsitzender), Prof. Dr.-Ing. Harald Bolt, > Prof. Dr. Sebastian M. Schmidt > ------------------------------------------------------------------------------------------------ > ------------------------------------------------------------------------------------------------ > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- Michael P. Young (574) 631-3268 (office) Nanofabrication Specialist (574) 631-4393 (fax) Department of Electrical Engineering (765) 637-3784 (cell) University of Notre Dame mike.young at nd.edu B-38 Stinson-Remick Hall Notre Dame, IN 46556-5637 -------------- next part -------------- An HTML attachment was scrubbed... URL: From sb86922 at usc.edu Mon Feb 4 00:27:14 2019 From: sb86922 at usc.edu (Shivakumar Bhaskaran) Date: Mon, 4 Feb 2019 05:27:14 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: References: Message-ID: Hi Savitha, I had the same issue with blistering on PMMA sample. You can try increasing the rate and see whether this reduce, (Ex in my case I had deposition of Ti 5A/s and Au 10 A/s). You can also add spacer between the crucible and pocket, this might help in reducing the current to evaporate the metals (and hence less electrons) As others have suggested we did install Ebeam optimizer to get rid of the blistering. The beam optimizer - enhances the magnetic field (can degrade over time) so that all electrons will be captured during the 270 degree turn from the filament and then hit the pocket. If the magnetic field is off or weak higher velocity electrons can escape the confines of the magnetic field and be driven to the substrate. The beam optimizer just added some B field to account for this. Attaching the picture how the Beam optimizer looks. Hope this helps. Shiva Shivakumar Bhaskaran, Ph.D., John D. O'Brien Nanofabrication Laboratory Michelson Hall, 1002 Childs Way, MCB LL121, Los Angeles, California 90089, 213 821 2374 [Sign] From: labnetwork-bounces at mtl.mit.edu On Behalf Of Savitha P Sent: Friday, February 1, 2019 3:54 AM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Blistering of metal film stack on PMMA Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 2926 bytes Desc: image002.jpg URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Ebeam Optimizer.pdf Type: application/pdf Size: 259904 bytes Desc: Ebeam Optimizer.pdf URL: From savithap at iisc.ac.in Mon Feb 4 07:47:48 2019 From: savithap at iisc.ac.in (Savitha P) Date: Mon, 4 Feb 2019 12:47:48 +0000 Subject: [labnetwork] Blistering of metal film stack on PMMA In-Reply-To: <58592D0F-F29E-49BA-A7C7-3B824125E973@uwaterloo.ca> References: <58592D0F-F29E-49BA-A7C7-3B824125E973@uwaterloo.ca> Message-ID: Dear Nathan, Shivakumar, Mark, David, Mary and Norman: Thank you so much for all your comments. We will work with all your suggestions and get back to you. Regards, Savitha ________________________________ From: Nathan Nelson - Fitzpatrick Sent: 01 February 2019 20:01:12 To: Savitha P; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Blistering of metal film stack on PMMA Hi Savitha, I have seen and experienced this issue before. My understanding is that the PMMA is blistering due to electrons impinging on your sample, over-dosing the PMMA. When I experienced this issue on my tool I did some searching online and found this report that correlated carbon in the Au melt to an increased current of electrons scattering off of the melt and into the sample. http://www.skyworksinc.com/downloads/press_room/published_articles/GaAs_Mantech_052010_6.pdf In my case I supposed that the likely source of the carbon was from the FABMATE crucible liner our lab was using for our Gold evaporation process. The liner?s glassy finish appeared to be wearing down due to handling and was likely leaving a small amount of carbon dust on the melt every time it was added or removed from our evaporator. I was able to fix our issue by taking the gold melt out of our old FABMATE liner, cleaning the carbon dust off of the ingot with some IPA and putting it back in a new FABMATE liner. Once the ingot was cleaned and put into a new liner the surface of the melt looked appreciably different. When contaminated with carbon it appeared to have a ?skin? on the top of the melt, while the clean melt has a uniform ?liquid-like? appearance. FYI: I have recently moved on to a Molybdenum liner as described in this Materion report, the downside with this is that the Gold wets the liner surface and will likely be difficult to reclaim if/when I have to do so. https://materion.com/-/media/files/advanced-materials-group/me/technicalpapers/developingafundamentalunderstandingofgoldspitting.pdf?la=en&hash=502E7BF53ECF2EE5923F4B5F7488A78B3B2ED05F Feel free to reach out if you want to discuss this problem further. Best regards, -Nathan -- Nathan Nelson-Fitzpatrick PhD Nanofabrication Process & Characterization Engineering Manager Quantum-Nano Fabrication and Characterization Facility (QNFCF) Office of Research University of Waterloo 200 University Avenue West, Waterloo, ON N2L 3G1 P: 519-888-4567 ext. 31796 C: 226-218-3206 https://fab.qnc.uwaterloo.ca [/Users/nnelsonf/Desktop/university-of-waterloo-logo-esig.png] From: on behalf of Savitha P Date: Friday, February 1, 2019 at 8:58 AM To: "labnetwork at mtl.mit.edu" Subject: [labnetwork] Blistering of metal film stack on PMMA Hello! We need inputs deposition of metal film stack on PMMA coated substrates. We see blisters on the PMMA which creates problems during lifting off process. We are using a Leybold UNIVEX400 E-Beam Evaporator. For a stack deposition of metals, example Cr/Au (10/50 nm) the film on Si and SiO2 substrate is smooth with good resistivity value.The film deposited on optical lithography patterned samples also give good lift off and the appearance of metal film on resist is smooth and usual. Whereas, for a film stack deposition on e-beam lithography patterned samples, the metal on the PMMA resist becomes completely blistered. The lift off is not clean, leaving behind random patches of metal over resist on the substrate even after longer duration in solvents. Few tool and process details: Source to substrate distance- Minimum 20 cm and Maximum 35 cms. Blisters observed for both the distances. Deposition rates of Cr 0.3 nm/s and Au 0.3 nm/s Base Pressure around 2 E-06 Torr Deposition at room temperature OPL resists used (AZ 5214E, S 1813, AZ 4562) EBL resists(PMMA 950 A4, PMMA 495 A4, EL-9) We have already tried different baking times for PMMA, different deposition rates, wait times between depositions and also grounding the substrate. Please let us know if anyone has an idea on how to solve this. With best wishes, Savitha Dr. Savitha P Chief Operating Officer National Nanofabrication Centre Centre for Nanoscience and Engineering Indian Institute of Science Bangalore - 560012 India. Ph. +91 80 2293 3319 www.cense.iisc.ac.in *Please note the change in my e-mail id* -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.png Type: image/png Size: 11994 bytes Desc: image001.png URL: From wjkiethe at ncsu.edu Mon Feb 4 16:21:56 2019 From: wjkiethe at ncsu.edu (Bill Kiether) Date: Mon, 4 Feb 2019 16:21:56 -0500 Subject: [labnetwork] Help setting up a Suss Delta 12L Spray Developer Message-ID: Hi, We recently acquired a Suss Delta 12L Spray Developer from a local company. However, it did not come with much in terms of documentation, etc. Does anyone have one of these tools in their lab, or used them elsewhere? We would like to set it up for a lift-off process. Any input would be appreciated. The main questions are: 1) Did your Environmental Health and Safety team have any major concerns, and if so, how did you address them? 2) Does anyone have a good standard process that we could use to check out the operation of the tool? 3) What has been the process that you found most useful for your lab? Sincerely, Bill Kiether NCSU Nanofabrication Facility -------------- next part -------------- An HTML attachment was scrubbed... URL: From zaksmfl at rit.edu Tue Feb 5 09:56:04 2019 From: zaksmfl at rit.edu (Zachary Kogut) Date: Tue, 5 Feb 2019 14:56:04 +0000 Subject: [labnetwork] Ultra Line 6000 Series Mask Aligner Manuals Message-ID: Hi Everyone, We recently acquired a Quintel Ultra Line 6000 Series High Resolution Mask Aligner. It came with no documentation and we could really use an Operators Manual and Maintenance Manual. If any of you out there have one of these mask aligners and would be willing to share your manuals, it would be much appreciated. Thanks, Zak Kogut KGCOE/SMFL Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2625 Rochester, NY 14623-5604 (585) 415-6771 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From julian.drakeford at ravenp.com Tue Feb 5 13:15:36 2019 From: julian.drakeford at ravenp.com (Julian Drakeford) Date: Tue, 5 Feb 2019 18:15:36 +0000 Subject: [labnetwork] Ultra Line 6000 Series Mask Aligner Manuals In-Reply-To: References: Message-ID: <1db03da387fb46bd85ae25ed0a9af820@ravenp.com> Hi Zak, I know the VP of Sales at Quintel and he is going to see if he can did up a manual for you. I will forward to you when if I get it. Cheers, Julian From: labnetwork-bounces at mtl.mit.edu On Behalf Of Zachary Kogut Sent: Tuesday, February 5, 2019 9:56 AM To: Lab Network (labnetwork at mtl.mit.edu) Subject: [labnetwork] Ultra Line 6000 Series Mask Aligner Manuals Hi Everyone, We recently acquired a Quintel Ultra Line 6000 Series High Resolution Mask Aligner. It came with no documentation and we could really use an Operators Manual and Maintenance Manual. If any of you out there have one of these mask aligners and would be willing to share your manuals, it would be much appreciated. Thanks, Zak Kogut KGCOE/SMFL Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2625 Rochester, NY 14623-5604 (585) 415-6771 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From corey.fucetola at gmail.com Wed Feb 6 09:54:01 2019 From: corey.fucetola at gmail.com (Corey Fucetola) Date: Wed, 6 Feb 2019 09:54:01 -0500 Subject: [labnetwork] selling sputtering equipment Message-ID: Labnetwork The Thin-film Deposition Lab at MIT is looking to find a good home for a large sputtering tool (which has several RF/DC triode guns w/ 3" targets, an e-beam evaporator, an Ar-ion-beam milling and Ar-ion-beam sputter deposition in addition to an XPS/Auger, LEED, RHEED analysis chamber). Please let us know if you are interested in obtaining more information. Dr. Corey Fucetola -------------- next part -------------- An HTML attachment was scrubbed... URL: From info at fabsurplus.com Tue Feb 5 06:04:35 2019 From: info at fabsurplus.com (Stephen Howe) Date: Tue, 05 Feb 2019 12:04:35 +0100 Subject: [labnetwork] I'm looking to run a prototype line for a 28 nm CMOS process, 40 layers, copper vias. Message-ID: <1549364675.2030.95.camel@fabsurplus.com> Dear All, I'm looking to run a prototype line for a 28 nm CMOS process, 40 layers, copper vias. If anyone has an equipment set we could use or purchase, please contact me. Yours sincerely, SDI Fabsurplus Group Stephen Howe Company Owner email: info at fabsurplus.com Mobile (USA) : +1 830-388-1071 Mobile (Italy) : +39 335-710-7756 WWW.FABSURPLUS.COM -------------- next part -------------- An HTML attachment was scrubbed... URL: From battle at advr-inc.com Wed Feb 6 13:19:52 2019 From: battle at advr-inc.com (Phil Battle) Date: Wed, 6 Feb 2019 11:19:52 -0700 Subject: [labnetwork] Sputtering tool Message-ID: <0918d8cf-fddf-e5c2-df9e-0a6391e77c3d@advr-inc.com> Hello Dr. Fucetola , I was passed information concerning interest in selling/removing a sputtering tool. Our Company has been looking for a thin film tool for its research, development and eventual production efforts and wondered if private companies are eligible for disposing of the tool or are you just looking for university's? If so could you provide some more information on the tool. We are interested using it for thin film sio2 deposition on nonlinear optical substrates (lithium niobate and KTP) Thanks in advance for considering this request. Best Regards Philip Battle AdvR, Inc 406 522-0388 From feargal.nolan at tyndall.ie Thu Feb 7 07:10:54 2019 From: feargal.nolan at tyndall.ie (Feargal Nolan) Date: Thu, 7 Feb 2019 12:10:54 +0000 Subject: [labnetwork] Job Post - Senior Maintenance Engineer. Message-ID: To whom it may concern, Please see below link to a position for which we are currently recruiting. If you have any queries don't hesitate to contact me. https://www.tyndall.ie/fn-2-senior-maintenance-engineer-_senior-technical-officer Best Regards, Feargal Nolan Maintenance Manager Tyndall National Institute Lee Maltings, Dyke Parade Cork, T12 R5CP Ireland t +353 21 234 6656 m +353 87 635 7673 -------------- next part -------------- An HTML attachment was scrubbed... URL: From amahmood at hbku.edu.qa Thu Feb 7 15:09:57 2019 From: amahmood at hbku.edu.qa (Dr. Aamer Mahmood) Date: Thu, 7 Feb 2019 20:09:57 +0000 Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation Message-ID: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> Hello all, We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr. I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition. I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun. I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc. Thanks in advance. -Aamer Mahmood Qatar Environment and Energy Research Institute Doha, Qatar This email message, including any attachments is intended solely for the addressee(s), and may contain information that is confidential or legally protected. Any use, disclosure, copying, printing or distribution of the information contained herein by persons other than the designated addressee is unauthorized and may be unlawful. If you believe that you have received this email in error, please notify the sender immediately and delete this email and any attachments from your system and discard any printout thereof. Qatar Foundation makes no warranty that this email is error- or virus-free .The views, opinions, conclusions, and other information expressed in this email are not necessarily endorsed by Qatar Foundation unless otherwise indicated by an authorized representative. As such, Qatar Foundation does not accept any liability for any emails and attachments that may violate the relevant applicable laws. -------------- next part -------------- An HTML attachment was scrubbed... URL: From spaolini at cns.fas.harvard.edu Thu Feb 7 16:53:20 2019 From: spaolini at cns.fas.harvard.edu (Paolini, Steven) Date: Thu, 7 Feb 2019 21:53:20 +0000 Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation In-Reply-To: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> References: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> Message-ID: Aamer, The way I understand your question is that you don't want to run at higher chamber pressures than the increased oxygen flow will produce right? If so, you need to install a larger pump or increase conductance if possible. Since you are running without a throttle valve, the chamber and pump are essentially acting in a manner as if the throttle valve were wide open. In this scenario, a throttle valve would only be useful to increase the chamber pressure. Steve Paolini Principal Equipment Engineer Harvard University Center for Nanoscale Systems 11 Oxford St. Cambridge, MA 02138 617- 496- 9816 spaolini at cns.fas.harvard.edu www.cns.fas.harvard.edu From: labnetwork-bounces at mtl.mit.edu On Behalf Of Dr. Aamer Mahmood Sent: Thursday, February 07, 2019 3:10 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation Hello all, We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr. I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition. I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun. I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc. Thanks in advance. -Aamer Mahmood Qatar Environment and Energy Research Institute Doha, Qatar This email message, including any attachments is intended solely for the addressee(s), and may contain information that is confidential or legally protected. Any use, disclosure, copying, printing or distribution of the information contained herein by persons other than the designated addressee is unauthorized and may be unlawful. If you believe that you have received this email in error, please notify the sender immediately and delete this email and any attachments from your system and discard any printout thereof. Qatar Foundation makes no warranty that this email is error- or virus-free .The views, opinions, conclusions, and other information expressed in this email are not necessarily endorsed by Qatar Foundation unless otherwise indicated by an authorized representative. As such, Qatar Foundation does not accept any liability for any emails and attachments that may violate the relevant applicable laws. -------------- next part -------------- An HTML attachment was scrubbed... URL: From djculver at aol.com Thu Feb 7 18:04:38 2019 From: djculver at aol.com (Dennis Culver) Date: Thu, 7 Feb 2019 23:04:38 +0000 (UTC) Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation References: <33817702.62790.1549580678093.ref@mail.yahoo.com> Message-ID: <33817702.62790.1549580678093@mail.yahoo.com> Hello Aamer, Out of curiosity, what type of high vacuum pump are you using? If you are using a cryo pump, I would be very worried about oxygen build up in the pump! Is the voltage adjustable on your E-gun power supply and how low can it be adjusted? ? The 1st thing that comes to mind is arcing at higher pressures from the HV feed thru up to the gun. ?You would of course need to recenter the beam at lower voltage and you may need to run at a lower beam current...... Dennis J. ?Culver ?Culver Consulting 5960 Valentine RoadUnit 14, Mail box 13Ventura, CA 93003 Ph (805) 648-1184Fx (805) 648-1485 Cell(805)680-7389 dennis at culverequipment.com?? -----Original Message----- From: Dr. Aamer Mahmood To: labnetwork at mtl.mit.edu Sent: Thu, Feb 7, 2019 1:28 pm Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation Hello all,We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr.?I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition.I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun.?I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc.Thanks in advance. -Aamer MahmoodQatar Environment and Energy Research InstituteDoha, Qatar This email message, including any attachments is intended solely for the addressee(s), and may contain information that is confidential or legally protected. Any use, disclosure, copying, printing or distribution of the information contained herein by persons other than the designated addressee is unauthorized and may be unlawful. If you believe that you have received this email in error, please notify the sender immediately and delete this email and any attachments from your system and discard any printout thereof. Qatar Foundation makes no warranty that this email is error- or virus-free .The views, opinions, conclusions, and other information expressed in this email are not necessarily endorsed by Qatar Foundation unless otherwise indicated by an authorized representative. As such, Qatar Foundation does not accept any liability for any emails and attachments that may violate the relevant applicable laws. _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From dave101260 at gmail.com Thu Feb 7 19:25:59 2019 From: dave101260 at gmail.com (Dave Terry) Date: Thu, 7 Feb 2019 19:25:59 -0500 Subject: [labnetwork] HP 4145A Message-ID: Hello all, I?ve resurrected an HP 4145A parametric analyzer, and run it thru a whole battery of tests. The unit is fully functional, except for the GP-IB/HP-IB communication. I?m wondering if there?s anyone here in the list that has some in-depth experience with these old beasts? Ultimately, the unit would be connected to a laptop running Labview. Any help is greatly appreciated. -- Best Regards, Dave Terry ??????????????????? Sent from Gmail Mobile 617 784 7942 -------------- next part -------------- An HTML attachment was scrubbed... URL: From mweiler at andrew.cmu.edu Thu Feb 7 21:57:52 2019 From: mweiler at andrew.cmu.edu (Mark Weiler) Date: Fri, 8 Feb 2019 02:57:52 +0000 Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation In-Reply-To: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> References: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> Message-ID: Hi Aamar, You could also try making a small 1/16? or 1/8? SS tube feed-through that allows a length of tube to enter the chamber and then bent into a position terminating nearby the substrate(s), thus permitting the small amount of O2 you already/currently use to be discharged directly at the substrate. Inexpensive and worth a shot... You would secure the swage fitting on the ATM side only after the correct length of tube within the chamber is determined. If you do not have a small swage feedthrough, you could use a 1/4? feed-through (or 6mm) and then downsize with an adapter to 1/8 (3mm) nearby the substrate and have a small section of tube affixed there. Best regards, Mark Mark Weiler Equipment & Facilities Manager Claire and John Bertucci Nanotechnology Laboratory Electrical and Computer Engineering | Carnegie Mellon University 5000 Forbes Ave., Pittsburgh, PA 15213-3890 T: 412.268.2471 F: 412.268.3497 www.ece.cmu.edu nanofab.ece.cmu.edu On Feb 7, 2019, at 22:25, Dr. Aamer Mahmood > wrote: Hello all, We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr. I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition. I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun. I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc. Thanks in advance. -Aamer Mahmood Qatar Environment and Energy Research Institute Doha, Qatar This email message, including any attachments is intended solely for the addressee(s), and may contain information that is confidential or legally protected. Any use, disclosure, copying, printing or distribution of the information contained herein by persons other than the designated addressee is unauthorized and may be unlawful. If you believe that you have received this email in error, please notify the sender immediately and delete this email and any attachments from your system and discard any printout thereof. Qatar Foundation makes no warranty that this email is error- or virus-free .The views, opinions, conclusions, and other information expressed in this email are not necessarily endorsed by Qatar Foundation unless otherwise indicated by an authorized representative. As such, Qatar Foundation does not accept any liability for any emails and attachments that may violate the relevant applicable laws. _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From roberto.panepucci at cti.gov.br Fri Feb 8 05:25:48 2019 From: roberto.panepucci at cti.gov.br (Roberto R. Panepucci) Date: Fri, 8 Feb 2019 08:25:48 -0200 (BRST) Subject: [labnetwork] HP 4145A In-Reply-To: References: Message-ID: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> Dear Dave, Some 30 yrs ago we automated measurements on Labview with a HP4145. What I recall is that you need to send commands to clear the Error Buffer every time, pretty much. That stuck to my mind... Hope that helps. Roberto -- Roberto R. Panepucci, PhD Pesquisador Titular/Senior Researcher Coordenador do N?cleo de Concep??o de Sistemas de Hardware Centro de Tecnologia da Informa??o Renato Archer - CTI Rodovia Dom Pedro I, km 143,6 Campinas - S?o Paulo - Brasil - CEP 13069-901 Telefone: +55 19 3746-6072 ----- Dave Terry escreveu: > Hello all, > > I?ve resurrected an HP 4145A parametric analyzer, and run it thru a whole > battery of tests. > > The unit is fully functional, except for the GP-IB/HP-IB communication. > > I?m wondering if there?s anyone here in the list that has some in-depth > experience with these old beasts? > > Ultimately, the unit would be connected to a laptop running Labview. > > Any help is greatly appreciated. > -- > Best Regards, > Dave Terry > ??????????????????? > Sent from Gmail Mobile > 617 784 7942 From bgila at ufl.edu Fri Feb 8 09:16:33 2019 From: bgila at ufl.edu (Brent Gila) Date: Fri, 8 Feb 2019 09:16:33 -0500 Subject: [labnetwork] HP 4145A In-Reply-To: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> References: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> Message-ID: <995a32ad-21c1-2d36-3568-ca8b66ab4b0f@ufl.edu> Hello Dave, We purchased this software to run our 4145.? It works very well and we have had no issues. https://www.metricstech.com/product/metrics-win4145/ It communicates via the GP-IB port on the back of the unit.? If your GP-IB port is not working, I am not sure how you will be able to interface labview with the unit. Best Regards, Brent -- Brent P. Gila, PhD. Director, Nanoscale Research Facility 1041 Center Drive University of Florida Gainesville, Florida 32611 Tel:352-273-2245 Fax:352-846-2877 email:bgila at ufl.edu On 2/8/2019 5:25 AM, Roberto R. Panepucci wrote: > Dear Dave, > Some 30 yrs ago we automated measurements on Labview with a HP4145. > What I recall is that you need to send commands to clear the Error Buffer every time, pretty much. That stuck to my mind... > Hope that helps. > Roberto > > From dave101260 at gmail.com Fri Feb 8 09:21:22 2019 From: dave101260 at gmail.com (Dave Terry) Date: Fri, 8 Feb 2019 09:21:22 -0500 Subject: [labnetwork] HP 4145A In-Reply-To: <995a32ad-21c1-2d36-3568-ca8b66ab4b0f@ufl.edu> References: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> <995a32ad-21c1-2d36-3568-ca8b66ab4b0f@ufl.edu> Message-ID: Thanks for the info Brent. What was the cost of the Metrics software? Is it a cost effective solution for such an ancient tool? On Fri, Feb 8, 2019 at 9:16 AM Brent Gila wrote: > Hello Dave, > > We purchased this software to run our 4145. It works very well and we > have had no issues. > https://www.metricstech.com/product/metrics-win4145/ > It communicates via the GP-IB port on the back of the unit. If your > GP-IB port is not working, I am not sure how you will be able to > interface labview with the unit. > > Best Regards, > Brent > -- > Brent P. Gila, PhD. > Director, Nanoscale Research Facility > 1041 Center Drive > > University of Florida > Gainesville, Florida 32611 > Tel:352-273-2245 > Fax:352-846-2877 > email:bgila at ufl.edu > > > On 2/8/2019 5:25 AM, Roberto R. Panepucci wrote: > > Dear Dave, > > Some 30 yrs ago we automated measurements on Labview with a HP4145. > > What I recall is that you need to send commands to clear the Error > Buffer every time, pretty much. That stuck to my mind... > > Hope that helps. > > Roberto > > > > > > -- Best Regards, Dave Terry ??????????????????? Sent from Gmail Mobile 617 784 7942 -------------- next part -------------- An HTML attachment was scrubbed... URL: From sjgeiger at udel.edu Fri Feb 8 09:39:51 2019 From: sjgeiger at udel.edu (Sarah Geiger) Date: Fri, 8 Feb 2019 09:39:51 -0500 Subject: [labnetwork] HP 4145A In-Reply-To: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> References: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> Message-ID: Hello Dave, I work with an HP8164A in my research. I communicate with it via LabView. After a time I found it was necessary to programmatically initialize and close the visa sessions each time you operate the laser, or else the laser will not be able to connect. You'll need the hp816x VI library in order to operate it with Labview. Let me know if you want more information about any of that. Best, *Sarah J. Geiger* George W. Laird Merit Fellow Graduate Student and Research Assistant Materials Science and Engineering Department University of Delaware MIT Visiting Student On Fri, Feb 8, 2019 at 8:00 AM Roberto R. Panepucci < roberto.panepucci at cti.gov.br> wrote: > Dear Dave, > Some 30 yrs ago we automated measurements on Labview with a HP4145. > What I recall is that you need to send commands to clear the Error Buffer > every time, pretty much. That stuck to my mind... > Hope that helps. > Roberto > > > -- > Roberto R. Panepucci, PhD > Pesquisador Titular/Senior Researcher > Coordenador do N?cleo de Concep??o de Sistemas de Hardware > Centro de Tecnologia da Informa??o Renato Archer - CTI > Rodovia Dom Pedro I, km 143,6 > Campinas - S?o Paulo - Brasil - CEP 13069-901 > Telefone: +55 19 3746-6072 > > > > ----- Dave Terry escreveu: > > Hello all, > > > > I?ve resurrected an HP 4145A parametric analyzer, and run it thru a whole > > battery of tests. > > > > The unit is fully functional, except for the GP-IB/HP-IB communication. > > > > I?m wondering if there?s anyone here in the list that has some in-depth > > experience with these old beasts? > > > > Ultimately, the unit would be connected to a laptop running Labview. > > > > Any help is greatly appreciated. > > -- > > Best Regards, > > Dave Terry > > ??????????????????? > > Sent from Gmail Mobile > > 617 784 7942 > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork > -------------- next part -------------- An HTML attachment was scrubbed... URL: From nclay at seas.upenn.edu Fri Feb 8 10:14:36 2019 From: nclay at seas.upenn.edu (Noah Clay) Date: Fri, 8 Feb 2019 10:14:36 -0500 Subject: [labnetwork] Chamber pressure during reactive e-beam evaporation In-Reply-To: References: <12A976BAF5CA81498991F859A5F9B8E57517ACBA@QFM00013.qf.org.qa> Message-ID: Hi Aamer, In MBE systems, thermal gas crackers are often used for low flux oxygen incorporation or other gases surface cleaning. Operating pressures are low and dissociation efficiency drops rather quickly with gas flow. Veeco, Scienta Omicron, Mantis and others have these as stock items. Helpful Google search term: "oxygen gas cracker mbe?. Best, Noah Clay Noah Clay School of Engineering & Applied Science University of Pennsylvania Philadelphia, PA > On Feb 7, 2019, at 9:57 PM, Mark Weiler wrote: > > Hi Aamar, > > You could also try making a small 1/16? or 1/8? SS tube feed-through that allows a length of tube to enter the chamber and then bent into a position terminating nearby the substrate(s), thus permitting the small amount of O2 you already/currently use to be discharged directly at the substrate. Inexpensive and worth a shot... > > You would secure the swage fitting on the ATM side only after the correct length of tube within the chamber is determined. If you do not have a small swage feedthrough, you could use a 1/4? feed-through (or 6mm) and then downsize with an adapter to 1/8 (3mm) nearby the substrate and have a small section of tube affixed there. > > Best regards, > > Mark > > > > Mark Weiler > Equipment & Facilities Manager > Claire and John Bertucci Nanotechnology Laboratory > Electrical and Computer Engineering | Carnegie Mellon University > 5000 Forbes Ave., Pittsburgh, PA 15213-3890 > T: 412.268.2471 > F: 412.268.3497 > www.ece.cmu.edu > nanofab.ece.cmu.edu > > On Feb 7, 2019, at 22:25, Dr. Aamer Mahmood > wrote: > >> Hello all, >> We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr. >> I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition. >> I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun. >> I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc. >> Thanks in advance. >> >> -Aamer Mahmood >> Qatar Environment and Energy Research Institute >> Doha, Qatar >> >> This email message, including any attachments is intended solely for the addressee(s), and may contain information that is confidential or legally protected. Any use, disclosure, copying, printing or distribution of the information contained herein by persons other than the designated addressee is unauthorized and may be unlawful. If you believe that you have received this email in error, please notify the sender immediately and delete this email and any attachments from your system and discard any printout thereof. Qatar Foundation makes no warranty that this email is error- or virus-free .The views, opinions, conclusions, and other information expressed in this email are not necessarily endorsed by Qatar Foundation unless otherwise indicated by an authorized representative. As such, Qatar Foundation does not accept any liability for any emails and attachments that may violate the relevant applicable laws. >> _______________________________________________ >> labnetwork mailing list >> labnetwork at mtl.mit.edu >> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From bgila at ufl.edu Fri Feb 8 10:37:14 2019 From: bgila at ufl.edu (Brent Gila) Date: Fri, 8 Feb 2019 10:37:14 -0500 Subject: [labnetwork] HP 4145A In-Reply-To: References: <972636007.8488803.1549621548490.JavaMail.zimbra@cti.gov.br> <995a32ad-21c1-2d36-3568-ca8b66ab4b0f@ufl.edu> Message-ID: Hello Dave, I believe the software was $1500 (with educational discount) and it requires a UBS dongle key, so you can't clone it easily.? I know a lot of people write their own in labview, we had some available funds so took a shortcut. The program works for many different devices that you can select in the software, so that is a plus, no need to rewrite the labview when reconfiguring a test station..? One researcher here had 3 or 4 components hooked to the same computer (stacked GP-IB cables) and was able to do quite a bit with the Metrics interface.? The nice thing is the data is output in a standard csv format, which you can also do in labview. Is it cost effective, it was to us.? But that is a matter of opinion and the situation.? There is a reason why people hold onto the older 4145 units and 3rd parties support them, they are really good units and a new one is over $40k. Best Regards, Brent On 2/8/2019 9:21 AM, Dave Terry wrote: > Thanks for the info Brent. > > What was the cost of the Metrics software? > > Is it a cost effective solution for such an ancient tool? > > > > On Fri, Feb 8, 2019 at 9:16 AM Brent Gila > wrote: > > Hello Dave, > > We purchased this software to run our 4145.? It works very well > and we > have had no issues. > https://www.metricstech.com/product/metrics-win4145/ > > It communicates via the GP-IB port on the back of the unit. If your > GP-IB port is not working, I am not sure how you will be able to > interface labview with the unit. > > Best Regards, > Brent > -- > Brent P. Gila, PhD. > Director, Nanoscale Research Facility > 1041 Center Drive > > University of Florida > Gainesville, Florida 32611 > Tel:352-273-2245 > Fax:352-846-2877 > email:bgila at ufl.edu > > > On 2/8/2019 5:25 AM, Roberto R. Panepucci wrote: > > Dear Dave, > > Some 30 yrs ago we automated measurements on Labview with a HP4145. > > What I recall is that you need to send commands to clear the > Error Buffer every time, pretty much. That stuck to my mind... > > Hope that helps. > > Roberto > > > > > > -- > Best Regards, > Dave Terry > ??????????????????? > Sent from Gmail Mobile > 617 784 7942 -------------- next part -------------- An HTML attachment was scrubbed... URL: From skooi at mit.edu Mon Feb 11 10:23:21 2019 From: skooi at mit.edu (Steven Earl Kooi) Date: Mon, 11 Feb 2019 15:23:21 +0000 Subject: [labnetwork] Job posting - Electron and Surface Microscopy Instrumentation Specialist Message-ID: <1C921423-BC82-4D3A-AAA0-4CE17EF3AFA9@mit.edu> Hello, The Institute for Soldier Nanotechnologies (ISN) at MIT has an open position for an "Electron and Surface Microscopy Instrumentation Specialist" Anyone interested can find out more about the position and apply at: https://careers.peopleclick.com/careerscp/client_mit/external/jobDetails/jobDetail.html?jobPostId=14851&localeCode=en-us Best, Steve. Steven Kooi, Ph.D. Principal Research Scientist Institute for Soldier Nanotechnologies Massachusetts Institute of Technology Phone: 617-324-6416 Fax: 617-253-5859 Email: skooi at mit.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From betemc at rit.edu Wed Feb 13 13:48:12 2019 From: betemc at rit.edu (Bruce Tolleson) Date: Wed, 13 Feb 2019 18:48:12 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation Message-ID: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From rmorrison at draper.com Thu Feb 14 08:00:22 2019 From: rmorrison at draper.com (Morrison, Richard H., Jr) Date: Thu, 14 Feb 2019 13:00:22 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: <31b476c61d77489e926999fa76173e85@draper.com> Here at Draper the gas is left in the lines at all times, we use double wall stainless and the gas cabinet is tied to the toxic gas monitor. If there is a leak the bottle is automatically shut off. Our gas cabinets are on the floor below the tools so there is a good distance to travel. If we pumped the lines out it would start to get expensive wasting all the gas. The purge of the lines must be done to ensure that there is no exposure to air so vacuum pump down is used and that will take a long time to evacuate the lines, then on the flip side when you repressurize the lines you may run into issues. You should talk to your university safety group and check the local codes as every jurisdiction has different rules. Rick From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Bruce Tolleson Sent: Wednesday, February 13, 2019 1:48 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From wjkiethe at ncsu.edu Thu Feb 14 11:23:11 2019 From: wjkiethe at ncsu.edu (Bill Kiether) Date: Thu, 14 Feb 2019 11:23:11 -0500 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: We do not evacuate between uses, but do evacuate if the lab or system is going to be down (and tagged out) for an extended time (months). For example, we were shutting a lab for 6 months for construction reasons, all of the toxic and flammables were evacuated and backfilled with UHP nitrogen ( or Argon). The backfilling is important as you don't want to leave silane lines at vacuum. Also, once in grad school, we did the same thing for a tool on which the only user was studying for 2 months for his prelims. That process saved lives as a new post doc decided to "borrow" a quarter turn valve off of the system without discussing it. Bill Kiether On Thu, Feb 14, 2019 at 7:47 AM Bruce Tolleson wrote: > Dear users of Silane and Dichlorosilane, > > When your systems that use silane and dichlorosilane are not in use do you > evacuate the lines going to the tool? We are looking for the best practices > for gas line safety in a student environment microelectronic clean room. > > The gas lines are wall mount or overhead coaxial stainless steel all > welded lines with excess flow sensors. > > What are you doing with you silane and dichlorosilane lines? > > Thank you, > > > > Bruce E. Tolleson > > Rochester Institute of Technology > > 82 Lomb Memorial Drive, Bldg 17-2627 > > Rochester, NY 14623-5604 > > (585) 478-3836 > > [image: http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] > > > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork > -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: not available URL: From rmichael at iesengineering.net Thu Feb 14 11:47:49 2019 From: rmichael at iesengineering.net (Rizik Michael) Date: Thu, 14 Feb 2019 16:47:49 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: Bruce, >From my experience in the high tech industry none of the specialty gas tubing including Silane and DCS are evacuated when the tools are not in use. All lines remain charged for immediate processing when needed. However, it is up to you and the universities policy whether to evacuate the lines or not. Excess flow switches need to be integrated with the gas panel within the gas cabinet. Orbitally welded SS316L EP single wall tubing is acceptable. Regards From: labnetwork-bounces at mtl.mit.edu On Behalf Of Bruce Tolleson Sent: Wednesday, February 13, 2019 10:48 AM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From Paul.Spizzirri at nanomelbourne.com Thu Feb 14 20:48:47 2019 From: Paul.Spizzirri at nanomelbourne.com (Paul Spizzirri) Date: Fri, 15 Feb 2019 12:48:47 +1100 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: Hi Guys We also use these gases here in Australia too and use the xmas shutdown period to completely pump them out and perform a leak decay test for integrity reporting - otherwise they are left live throughout the year. Same configuration as mentioned above with DC, restricted flow control, gas montoring and DC monitoring etc to life safety systems with central shutdown. Note that the pump down for DCS is tricky as you are likely to get liquid condensing in the lines - depending on how long they are, you could be pumping for days to get them cleared. Cheers Paul On Fri, 15 Feb 2019 at 12:43, Bill Kiether wrote: > We do not evacuate between uses, but do evacuate if the lab or system is > going to be down (and tagged out) for an extended time (months). > > For example, we were shutting a lab for 6 months for construction reasons, > all of the toxic and flammables were evacuated and backfilled with UHP > nitrogen ( or Argon). The backfilling is important as you don't want to > leave silane lines at vacuum. Also, once in grad school, we did the same > thing for a tool on which the only user was studying for 2 months for his > prelims. That process saved lives as a new post doc decided to "borrow" a > quarter turn valve off of the system without discussing it. > > Bill Kiether > > > > On Thu, Feb 14, 2019 at 7:47 AM Bruce Tolleson wrote: > >> Dear users of Silane and Dichlorosilane, >> >> When your systems that use silane and dichlorosilane are not in use do >> you evacuate the lines going to the tool? We are looking for the best >> practices for gas line safety in a student environment microelectronic >> clean room. >> >> The gas lines are wall mount or overhead coaxial stainless steel all >> welded lines with excess flow sensors. >> >> What are you doing with you silane and dichlorosilane lines? >> >> Thank you, >> >> >> >> Bruce E. Tolleson >> >> Rochester Institute of Technology >> >> 82 Lomb Memorial Drive, Bldg 17-2627 >> >> Rochester, NY 14623-5604 >> >> (585) 478-3836 >> >> [image: http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] >> >> >> _______________________________________________ >> labnetwork mailing list >> labnetwork at mtl.mit.edu >> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork >> > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork > -- *Dr Paul Spizzirri* Operations and EHS Manager *Melbourne Centre for Nanofabrication* 151 Wellington Road Clayton VIC Australia 3168. Australian National Fabrication Facility (Victorian Node) T: +61 (3) 9902 9653 M: +61 (4) 0720 3145 E: paul.spizzirri@ nanomelbourne.com W: nanomelbourne.com -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: not available URL: From odc1n08 at soton.ac.uk Fri Feb 15 09:40:10 2019 From: odc1n08 at soton.ac.uk (Clark O.D.) Date: Fri, 15 Feb 2019 14:40:10 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: We operate in a similar fashion at Southampton. Lines run to the facility, distributed to tools inside extracted wall manifold boxes, separated lines run to extracted tool point of use gas manifolds. All points where compression fittings are used are extracted and gas detectors placed in the extract ducting. All enclosures are locked to prevent unauthorised access. The manifold tool feeds act as extensions to the chambers and are therefore kept at vacuum when not processing (as standard). Lines are emptied for extended shutdowns and backfilled as required. All lines orbitally welded, nastier gases are shrouded with negative extract given to the shroud back at the cylinder panel. We have a long DCS line, possibly 100m. No condensation problems yet, we use no more line pressure than is required for maximum MFC flow at the point of use and the natural temperature increase from gas rooms to cleanroom seems sufficient to prevent localised condensation. The last few metres of line and MFC are heated. Apart from leak safety a significant part of risk minimisation seems to be that on no account should a user of the facility should have access to any valve or compressed fitting in the line. Competent staff only, any potentially live gas line modification requires a method statement/risk assessment and permit to work signed off before picking up tools. Regards, Owain. From: labnetwork-bounces at mtl.mit.edu On Behalf Of Paul Spizzirri Sent: 15 February 2019 01:49 To: Bill Kiether Cc: labnetwork at mtl.mit.edu; Bruce Tolleson Subject: Re: [labnetwork] Silane and Dichlorosilane Line Evacuation Hi Guys We also use these gases here in Australia too and use the xmas shutdown period to completely pump them out and perform a leak decay test for integrity reporting - otherwise they are left live throughout the year. Same configuration as mentioned above with DC, restricted flow control, gas montoring and DC monitoring etc to life safety systems with central shutdown. Note that the pump down for DCS is tricky as you are likely to get liquid condensing in the lines - depending on how long they are, you could be pumping for days to get them cleared. Cheers Paul On Fri, 15 Feb 2019 at 12:43, Bill Kiether > wrote: We do not evacuate between uses, but do evacuate if the lab or system is going to be down (and tagged out) for an extended time (months). For example, we were shutting a lab for 6 months for construction reasons, all of the toxic and flammables were evacuated and backfilled with UHP nitrogen ( or Argon). The backfilling is important as you don't want to leave silane lines at vacuum. Also, once in grad school, we did the same thing for a tool on which the only user was studying for 2 months for his prelims. That process saved lives as a new post doc decided to "borrow" a quarter turn valve off of the system without discussing it. Bill Kiether On Thu, Feb 14, 2019 at 7:47 AM Bruce Tolleson > wrote: Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- Dr Paul Spizzirri Operations and EHS Manager Melbourne Centre for Nanofabrication 151 Wellington Road Clayton VIC Australia 3168. Australian National Fabrication Facility (Victorian Node) T: +61 (3) 9902 9653 M: +61 (4) 0720 3145 E: paul.spizzirri@nanomelbourne.com W: nanomelbourne.com -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From hathaway at cns.fas.harvard.edu Fri Feb 15 10:49:08 2019 From: hathaway at cns.fas.harvard.edu (Hathaway, Malcolm R) Date: Fri, 15 Feb 2019 15:49:08 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> Message-ID: <5C66DF73.9010603@cns.fas.harvard.edu> Hi Bruce, Similar to what Rick at Draper described, here at Harvard CNS we do not pump down lines to tools between uses (even over Christmas Break). We use double-wall ("coax") piping, and the pressure between the walls is monitored by the TGMS. Any fault condition (coax fail, gas sense events, etc) will cause all toxics and flammables to shut off at the cabinet and at any associated VMBs (valve manifold boxes). (VMBs are like little "sub-cabinets", housing what are essentially distribution manifolds in the gas line between cylinder cabinet and tool). If you have a shared use facility where users have little or no access to gas piping and other infrastructure, this works pretty well. In an individual professor's lab, where "borrowing" of live hardware can occur (!), different arrangements might be in order. Regarding DCS, we have gotten around the condensation issue by using "sub-atmospheric" supply pressure, i.e. the special regulator we have on DCS and BCl3 allows delivery pressure of only a few hundred torr, so the pressure is never high enough in the lines to allow condensation, even at room temp. Saves lots of trouble with heater tape and worries about cold spots... Mac Mac Hathaway Senior Process and Systems Engineer Harvard Center for Nanoscale Systems 11 Oxford St. Cambridge, MA 02138 617-495-9012 On 2/14/2019 8:48 PM, Paul Spizzirri wrote: Hi Guys We also use these gases here in Australia too and use the xmas shutdown period to completely pump them out and perform a leak decay test for integrity reporting - otherwise they are left live throughout the year. Same configuration as mentioned above with DC, restricted flow control, gas montoring and DC monitoring etc to life safety systems with central shutdown. Note that the pump down for DCS is tricky as you are likely to get liquid condensing in the lines - depending on how long they are, you could be pumping for days to get them cleared. Cheers Paul On Fri, 15 Feb 2019 at 12:43, Bill Kiether > wrote: We do not evacuate between uses, but do evacuate if the lab or system is going to be down (and tagged out) for an extended time (months). For example, we were shutting a lab for 6 months for construction reasons, all of the toxic and flammables were evacuated and backfilled with UHP nitrogen ( or Argon). The backfilling is important as you don't want to leave silane lines at vacuum. Also, once in grad school, we did the same thing for a tool on which the only user was studying for 2 months for his prelims. That process saved lives as a new post doc decided to "borrow" a quarter turn valve off of the system without discussing it. Bill Kiether On Thu, Feb 14, 2019 at 7:47 AM Bruce Tolleson > wrote: Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- Dr Paul Spizzirri Operations and EHS Manager Melbourne Centre for Nanofabrication 151 Wellington Road Clayton VIC Australia 3168. Australian National Fabrication Facility (Victorian Node) T: +61 (3) 9902 9653 M: +61 (4) 0720 3145 E: paul.spizzirri@nanomelbourne.com W: nanomelbourne.com _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: ATT00001.jpg Type: image/jpeg Size: 2550 bytes Desc: ATT00001.jpg URL: From dilan at email.gwu.edu Fri Feb 15 12:08:28 2019 From: dilan at email.gwu.edu (Ratnayake, Dilan) Date: Fri, 15 Feb 2019 12:08:28 -0500 Subject: [labnetwork] Plasma-Therm Technical Workshop at GWNIC Message-ID: Dear Colleagues, George Washgington University Nanofabrication & Imaging Center together with Plasma-Therm is organizing a technical workshop on Tuesday, February 26th for Fundamentals of Plasma Processing (Etching and Deposition). If you are close to DC metro area and interested to participate , please use the following link to register. https://nic.gwu.edu/plasma-processing-workshop The workshop is free but requires a registration. Please see details in the attached flyer. Thank you -- Dilan Ratnayake, PhD. Process Engineer GW Nanofabrication and Imaging Center George Washington University 800 NW 22nd Street Rm-B2835 Washington D.C. 20052 Office 202-994-2614 How was the service you received from the Office of the Vice President for Research? Click here to let us know! -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PlasmaTherm_Workshop.pdf Type: application/pdf Size: 783184 bytes Desc: not available URL: From julia.aebersold at louisville.edu Fri Feb 15 13:54:11 2019 From: julia.aebersold at louisville.edu (Aebersold,Julia W.) Date: Fri, 15 Feb 2019 18:54:11 +0000 Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation In-Reply-To: <31b476c61d77489e926999fa76173e85@draper.com> References: <478bb081ee9941829859d76193246aa8@ex04mail01a.ad.rit.edu> <31b476c61d77489e926999fa76173e85@draper.com> Message-ID: We do the same as Draper, but our Silane is stored outside in our bunker. Cheers! Julia Aebersold Manager, Micro/Nano Technology Center University of Louisville Shumaker Research Building, Room 233 2210 South Brook Street Louisville, KY 40292 (502) 852-1572 http://louisville.edu/micronano/ From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr Sent: Thursday, February 14, 2019 8:00 AM To: Bruce Tolleson ; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] Silane and Dichlorosilane Line Evacuation Here at Draper the gas is left in the lines at all times, we use double wall stainless and the gas cabinet is tied to the toxic gas monitor. If there is a leak the bottle is automatically shut off. Our gas cabinets are on the floor below the tools so there is a good distance to travel. If we pumped the lines out it would start to get expensive wasting all the gas. The purge of the lines must be done to ensure that there is no exposure to air so vacuum pump down is used and that will take a long time to evacuate the lines, then on the flip side when you repressurize the lines you may run into issues. You should talk to your university safety group and check the local codes as every jurisdiction has different rules. Rick From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Bruce Tolleson Sent: Wednesday, February 13, 2019 1:48 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Silane and Dichlorosilane Line Evacuation Dear users of Silane and Dichlorosilane, When your systems that use silane and dichlorosilane are not in use do you evacuate the lines going to the tool? We are looking for the best practices for gas line safety in a student environment microelectronic clean room. The gas lines are wall mount or overhead coaxial stainless steel all welded lines with excess flow sensors. What are you doing with you silane and dichlorosilane lines? Thank you, Bruce E. Tolleson Rochester Institute of Technology 82 Lomb Memorial Drive, Bldg 17-2627 Rochester, NY 14623-5604 (585) 478-3836 [http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg] ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 2550 bytes Desc: image001.jpg URL: From lvchang at Central.UH.EDU Thu Feb 21 14:39:15 2019 From: lvchang at Central.UH.EDU (Chang, Long) Date: Thu, 21 Feb 2019 19:39:15 +0000 Subject: [labnetwork] Sputter Fe Message-ID: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> Hi All, I have a user who's wants to sputter Fe in our UHV sputtering system. My director is worried about rust forming. Anyone have adverse experience with Fe I should consider before allowing its usage? Thanks, Long From rmorrison at draper.com Thu Feb 21 16:28:41 2019 From: rmorrison at draper.com (Morrison, Richard H., Jr) Date: Thu, 21 Feb 2019 21:28:41 +0000 Subject: [labnetwork] Sputter Fe In-Reply-To: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> References: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> Message-ID: <6f430f56e8fc4b358150128deff0465c@draper.com> Here at Draper we tried EBEAM evaporation and RF sputter, DC mag sputter will not work because Fe is magnetic. It was not too bad on the tools, we did not notice any rust issues. Rick -----Original Message----- From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Chang, Long Sent: Thursday, February 21, 2019 2:39 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] Sputter Fe Hi All, I have a user who's wants to sputter Fe in our UHV sputtering system. My director is worried about rust forming. Anyone have adverse experience with Fe I should consider before allowing its usage? Thanks, Long _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ From beaudoin at physics.ubc.ca Thu Feb 21 16:37:54 2019 From: beaudoin at physics.ubc.ca (Beaudoin, Mario) Date: Thu, 21 Feb 2019 13:37:54 -0800 Subject: [labnetwork] Sputter Fe In-Reply-To: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> References: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> Message-ID: Long, If you have future plans to do work that is sensitive to magnetic materials, Fe will completely kill it (eg superconductors).? We've allowed Fe in one evaporator, as some groups need it as catalyst layer for CNT growth.? There was no rust issue.? We have yet to allow Fe in our other evaporators. Mario On 2019-02-21 11:39 a.m., Chang, Long wrote: > Hi All, > > I have a user who's wants to sputter Fe in our UHV sputtering system. My director is worried about rust forming. Anyone have adverse experience with Fe I should consider before allowing its usage? > > Thanks, > Long > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -- -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Mario Beaudoin SBQMI sig 2.jpg Type: image/jpeg Size: 21446 bytes Desc: not available URL: From karlb at uw.edu Thu Feb 21 19:54:51 2019 From: karlb at uw.edu (Karl F. Bohringer) Date: Fri, 22 Feb 2019 00:54:51 +0000 Subject: [labnetwork] Position opening: Director of the Washington Nanofabrication Facility, University of Washington, Seattle Message-ID: The University of Washington currently has an opening for the director of the Washington Nanofabrication Facility. The WNF is the largest publicly accessible cleanroom in the Pacific Northwest and a key facility of the NSF-supported National Nanotechnology Coordinated Infrastructure network. A recently completed $37M renovation more than doubled its floorspace, which houses about 100 instruments covering a wide range of nanofabrication capabilities, including direct-write, contact, i-line, and e-beam lithography, extensive thin film processing, and back-end capabilities. Activity in the WNF has increased 5-fold over the past 7 years, supporting academic as well as industrial users that range from start-ups to major corporations. The WNF director will oversee all aspects of cleanroom operation and supervise a staff of more than 10 technical and administrative members. The job description and instructions for applying can be found here: https://uwhires.admin.washington.edu/eng/candidates/default.cfm?szCategory=jobprofile&szOrderID=164997&szCandidateID=0&szSearchWords=&szReturnToSearch=1 Karl F. B?hringer, Ph.D. Professor of Electrical & Computer Engineering and Bioengineering Director, Nano-engineered Systems Institute (NanoES) Site Director, National Nanotechnology Coordinated Infrastructure (NNCI) University of Washington Campus Box 352500 Seattle, WA 98195-2500, USA karlb at uw.edu nano.uw.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mweiler at andrew.cmu.edu Thu Feb 21 20:06:53 2019 From: mweiler at andrew.cmu.edu (Mark Weiler) Date: Fri, 22 Feb 2019 01:06:53 +0000 Subject: [labnetwork] Sputter Fe In-Reply-To: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> References: <48768763-0360-40AA-B9CB-B3905CE98D19@cougarnet.uh.edu> Message-ID: <87E0D7AE-1518-45A8-9622-D1C9F07F15D7@andrew.cmu.edu> Hi Long, I have sputtered iron extensively using an ion beam (IBS) in a UHV chamber. I did not notice any adverse affects? Our chamber was well shielded with custom fit stainless steel shields, which were cleaned every 3 to 4 months. Best, Mark Mark Weiler Equipment & Facilities Manager Claire and John Bertucci Nanotechnology Laboratory Electrical and Computer Engineering | Carnegie Mellon University 5000 Forbes Ave., Pittsburgh, PA 15213-3890 T: 412.268.2471 F: 412.268.3497 www.ece.cmu.edu nanofab.ece.cmu.edu On Feb 21, 2019, at 22:17, Chang, Long > wrote: Hi All, I have a user who's wants to sputter Fe in our UHV sputtering system. My director is worried about rust forming. Anyone have adverse experience with Fe I should consider before allowing its usage? Thanks, Long _______________________________________________ labnetwork mailing list labnetwork at mtl.mit.edu https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From wjkiethe at ncsu.edu Sat Feb 23 12:42:46 2019 From: wjkiethe at ncsu.edu (Bill Kiether) Date: Sat, 23 Feb 2019 12:42:46 -0500 Subject: [labnetwork] Alcatel mechanical pump rebuild contacts Message-ID: Hello, We are looking for any good contacts for buying or refurbishing used Alacatel 2063 C2 mechanical pumps using Fomblin? We had a good local contractor who shut down last year, and have a backlog and immediate need for use in an LPCVD nitride system. Also, has anyone had good results moving to a more modern equivalent of the 2063C? Bill Kiether Interim Photonics Lab Supervisor NCSU wjkiethe at ncsu.edu (919) 522-9973 -------------- next part -------------- An HTML attachment was scrubbed... URL: From feargal.nolan at tyndall.ie Mon Feb 25 08:14:19 2019 From: feargal.nolan at tyndall.ie (Feargal Nolan) Date: Mon, 25 Feb 2019 13:14:19 +0000 Subject: [labnetwork] Exciting Semiconductor Maintenance Job Opportunity in Ireland Message-ID: To Whom it may concern, We have an opening for a Senior Maintenance Engineer in Ireland. We are Irelands largest ICT Semiconductor Research Centre located in the south of the country in the heart of Cork city. Cork is Irelands second city and has all the expected and associated amenities and infrastructure. For details of the post and application instructions please click on the following link. https://www.tyndall.ie/fn-2-senior-maintenance-engineer-_senior-technical-officer International relocation package available. Please feel free to contact me for any queries you might have. Best Regards, Feargal Nolan Maintenance Manager Tyndall National Institute Lee Maltings, Dyke Parade Cork, T12 R5CP Ireland t +353 21 234 6656 m +353 87 635 7673 -------------- next part -------------- An HTML attachment was scrubbed... URL: From josvanhei at gmail.com Mon Feb 25 12:28:01 2019 From: josvanhei at gmail.com (Josh Heinemann) Date: Mon, 25 Feb 2019 10:28:01 -0700 Subject: [labnetwork] BOE clean up Message-ID: Hi, I appreciate any feedback you can give me. We have a clogged valve from our BOE etch tank. Does anyone know what is the best chemical to dissolve salt crystals which may have formed in the valve? Best regards, -- Joshua Heinemann -------------- next part -------------- An HTML attachment was scrubbed... URL: From rmorrison at draper.com Tue Feb 26 05:43:43 2019 From: rmorrison at draper.com (Morrison, Richard H., Jr) Date: Tue, 26 Feb 2019 10:43:43 +0000 Subject: [labnetwork] BOE clean up In-Reply-To: References: Message-ID: <18d327b7b0114143b2d57c45bfd13b66@draper.com> Those most likely are ammonium fluoride crystals, in the past I have used just plain old DI maybe heat it up a little that should dissolve the material. Rick From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Josh Heinemann Sent: Monday, February 25, 2019 12:28 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] BOE clean up Hi, I appreciate any feedback you can give me. We have a clogged valve from our BOE etch tank. Does anyone know what is the best chemical to dissolve salt crystals which may have formed in the valve? Best regards, -- Joshua Heinemann ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: From stieg at cnsi.ucla.edu Tue Feb 26 12:38:01 2019 From: stieg at cnsi.ucla.edu (Stieg, Adam) Date: Tue, 26 Feb 2019 17:38:01 +0000 Subject: [labnetwork] Source for Suss SB6 wafer bonder parts Message-ID: <02E5A928-7566-407E-87F7-2238BD63D4CA@cnsi.ucla.edu> Hi All, I would greatly appreciate any information on where we might be able to source parts for our Suss bonder. The top-side heater has failed (twice) and is not readily repairable due to the nature of the electrical connection to the heating element. We have sourced this part through ClassOne in the past via Germany but are having no luck this time. Any info would great. Best, Adam Adam Stieg Ph.D. Associate Director California NanoSystems Institute UCLA From julia.aebersold at louisville.edu Tue Feb 26 14:52:59 2019 From: julia.aebersold at louisville.edu (Aebersold,Julia W.) Date: Tue, 26 Feb 2019 19:52:59 +0000 Subject: [labnetwork] BOE clean up In-Reply-To: <18d327b7b0114143b2d57c45bfd13b66@draper.com> References: <18d327b7b0114143b2d57c45bfd13b66@draper.com> Message-ID: Same here. We just use DI and that usually takes care of it. Cheers! Julia Aebersold Manager, Micro/Nano Technology Center University of Louisville Shumaker Research Building, Room 233 2210 South Brook Street Louisville, KY 40292 (502) 852-1572 http://louisville.edu/micronano/ From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr Sent: Tuesday, February 26, 2019 5:44 AM To: Josh Heinemann ; labnetwork at mtl.mit.edu Subject: Re: [labnetwork] BOE clean up Those most likely are ammonium fluoride crystals, in the past I have used just plain old DI maybe heat it up a little that should dissolve the material. Rick From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Josh Heinemann Sent: Monday, February 25, 2019 12:28 PM To: labnetwork at mtl.mit.edu Subject: [labnetwork] BOE clean up Hi, I appreciate any feedback you can give me. We have a clogged valve from our BOE etch tank. Does anyone know what is the best chemical to dissolve salt crystals which may have formed in the valve? Best regards, -- Joshua Heinemann ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: From demis at ucsb.edu Wed Feb 27 01:28:27 2019 From: demis at ucsb.edu (Demis D. John) Date: Tue, 26 Feb 2019 22:28:27 -0800 Subject: [labnetwork] BOE clean up In-Reply-To: References: <18d327b7b0114143b2d57c45bfd13b66@draper.com> Message-ID: <7CC4AF5B-646E-42C9-BF39-92D8554486B9@ucsb.edu> I believe these form due to getting cold, so a little heat applied in any way may unclog it. We see BHF liquid left on the benches for too long sometimes fill with crystals, and I?ve heard warming them (even with running DI on the outside of the container) dissolves them again. -- Demis > On Feb 26, 2019, at 11:52, Aebersold,Julia W. wrote: > > Same here. We just use DI and that usually takes care of it. > > Cheers! > > Julia Aebersold > Manager, Micro/Nano Technology Center > University of Louisville > Shumaker Research Building, Room 233 > 2210 South Brook Street > Louisville, KY 40292 > (502) 852-1572 > > http://louisville.edu/micronano/ > > From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Morrison, Richard H., Jr > Sent: Tuesday, February 26, 2019 5:44 AM > To: Josh Heinemann ; labnetwork at mtl.mit.edu > Subject: Re: [labnetwork] BOE clean up > > Those most likely are ammonium fluoride crystals, in the past I have used just plain old DI maybe heat it up a little that should dissolve the material. > > Rick > > > From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Josh Heinemann > Sent: Monday, February 25, 2019 12:28 PM > To: labnetwork at mtl.mit.edu > Subject: [labnetwork] BOE clean up > > Hi, > > I appreciate any feedback you can give me. We have a clogged valve from our BOE etch tank. Does anyone know what is the best chemical to dissolve salt crystals which may have formed in the valve? > > Best regards, > > -- > Joshua Heinemann > Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. > _______________________________________________ > labnetwork mailing list > labnetwork at mtl.mit.edu > https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork -------------- next part -------------- An HTML attachment was scrubbed... URL: From rmorrison at draper.com Wed Feb 27 11:33:36 2019 From: rmorrison at draper.com (Morrison, Richard H., Jr) Date: Wed, 27 Feb 2019 16:33:36 +0000 Subject: [labnetwork] humidity control question Message-ID: <8bb5eced99af47adbf976fdf6312a704@draper.com> HI Everyone, Has any heard about using ultrasonic humidification for a cleanroom RH control. We have a steam to steam RH system here and we are looking for an upgrade. I saw an article in Solid State Technology that stated 300mm fabs are going to ultrasonic generation for steam. Thanks Rick Richard H. Morrison Principal Member of the Technical Staff Draper 555 Technology Square Cambridge, MA 02139-3573 Work 617-258-3420 Cell 508-930-3461 www.draper.com ________________________________ Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email. ________________________________ -------------- next part -------------- An HTML attachment was scrubbed... URL: