[labnetwork] Chamber pressure during reactive e-beam evaporation

[Dr. Aamer Mahmood]

Hello all,
We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure has been less than 2e-4 Torr.
I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition.
I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun.
I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc.
Thanks in advance.

-Aamer Mahmood
Qatar Environment and Energy Research Institute
Doha, Qatar

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