[labnetwork] Electrical properties of PECVD oxide deposited in Oxford System100

[Lino Eugene]

Dear colleagues,

I have done some CV measurements on a MOS capacitor with 22 nm PECVD oxide deposited in a Oxford System100 system for the first time. I noticed that:

·        The as-deposited layer has bad CV characteristics with large flatband voltage, hysteresis and shoulder at low frequency, which indicates the presence of interface traps.

·        A post-Aluminum metallization annealing in forming gas substantially improves the CV characteristics with a lower capacitance in accumulation, low flat band voltage, inversion at low frequency and no hysteresis.

I am wondering if this is expected for PECVD oxide and if forming gas annealing is always required to improve the characteristics. Has one of you have done these measurements for PECVD oxide deposited in similar systems and could share data for comparison?

I can provide the CV curves if required.

Best,

Lino Eugene, P.Eng., Ph.D.,
Micro/nanofabrication process engineer
Quantum-Nano Fabrication and Characterization Facility
QNC 1611
University of Waterloo
200 University Avenue West
Waterloo, ON, Canada
N2L 3G1

Ph: +1 519-888-4567 #37788
Cell: +1 226-929-1685
Website: https://fab.qnc.uwaterloo.ca/

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