[labnetwork] Fw: ICP STS ASE Issue

[Shepard, Jeremiah J]

Ok so here are my process parameters:

#1 Recipe (this is the "standard recipe" for users)
10 second Etch / 10 second Dep
30 mTorr Etch pressure / 50 mTorr Dep pressure
1000 watts Etch coil / 1000 watts Dep coil
10 watts Etch Platen Hf / 0 watts Dep Platen Hf
250 sccm Sf6 with 30 sccm O2 Etch gas / 100 sccm C4F8 Dep gas

#2 Recipe (This is not standard but is still producing grass)
5 second Etch / 5 second Dep
25 mTorr Etch pressure / 25 mTorr Dep pressure
450 watts Etch coil / 800 watts Dep coil
13 watts Etch Platen Hf / 0 watts Dep Platen Hf
85 sccm Sf6 with 8.5 O2 Etch gas / 130 sccm C4F8 Dep gas

Etch and tune caps are Auto tuned so I'm not sure how to adjust these if possible.

Thanks,
Jerry
________________________________
From: Bruce Tolleson <betemc at rit.edu>
Sent: Thursday, July 22, 2021 7:58 AM
To: Shepard, Jeremiah J <jshepar at purdue.edu>
Subject: RE: ICP STS ASE Issue


This is DRIE? Is the carrier made of Silicon with no capping layer of metal (this is what it appears to be). If that is the case, there is the  (big) problem: DRIE is extremely dependent on exposed silicon area, so having a massive amount of silicon available would certainly cause strange things like this.





Bruce E. Tolleson

Rochester Institute of Technology

82  Lomb Memorial Drive, Bldg 17-2627

Rochester, NY 14623-5604

(585) 478-3836

[http://www.rit.edu/~962www/logos/tiger_walking_rit_color.jpg]



From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Shepard, Jeremiah J
Sent: Wednesday, July 21, 2021 9:44 AM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] ICP STS ASE Issue



I am having some trouble determining what this issue is? We have found a bad capacitor in the matching network, and replaced that, thought all was good but now we face this issue.



Now I am having trouble with grass formation on student sample. Anyone know where to look for this kind of thing? Is it just sample recipe or something else perhaps? Any thoughts are appreciated! Also unsure of what's going on with the carrier wafer around the sample...?



Thanks,

Jerry Shepard



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