[labnetwork] Mask of Al in HF

[Dan Haronian]

Hi,
See attached paper referring to the glycerin option.  According to this
paper, adding 1 or 3 parts of glycerin actually decreases the selectivity.
Maybe higher glycerin concentration is required.


With best regards,
_______________
*Dr. Dan Haronian*
CTO and co-founder
*m*: (+972) 54 542 1951  |  *e*:dan at enervibe.co  | *w*: enervibe.co
*Mailing address:* 1st floor Barkat building, 1 Golan street, Airport City,
Zip code 7019900, ISRAEL





On Wed, 3 Nov 2021 at 16:31, Shimon Eliav <shimonel at savion.huji.ac.il>
wrote:

> Hi All,
>
> I found very interesting the discussion around Joe’s question.
>
> Please find attached the summary of the answers.
>
> Regards,
>
> Shimon
>
>
>
> *From:* labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] *On Behalf Of *Maduzia,
> Joseph Walter
> *Sent:* Tuesday, 26 October 2021 23:49
> *To:* labnetwork at mtl.mit.edu
> *Subject:* [labnetwork] Mask of Al in HF
>
>
>
> Hello,
>
>
>
> Does anyone have any suggestions for mask materials to protect Al in HF
> 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to
> glass, HF etch to undercut and free devices, but have Al contact pads and
> AL is dep’d first. Typically we use PR as pattern mask, but the Al is
> etching behind the PR. In this case the Al is deposited first, so although
> order of operations change might help, it’s not a good option atm.
>
>
> Thank you for any suggestions you might have!
>
> *JOE MADUZIA*
> *MNMS Laboratory Specialist*
>
> The Grainger College of Engineering
> Mechanical Science and Engineering
>
> 2239 Sidney Lu Mechanical Engineering Bldg
> 1206 W. Green
> Urbana, IL 61801
> 217.244.6302 | jmaduzi2 at illinois.edu
>
> https://cleanroom.mechse.illinois.edu/
>
> <http://illinois.edu/>
>
> *Under the Illinois Freedom of Information Act any written communication
> to or from university employees regarding university business is a public
> record and may be subject to public disclosure.*
>
>
>
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