From jtmitch5 at ncsu.edu  Mon Oct  4 13:23:34 2021
From: jtmitch5 at ncsu.edu (James Mitchell)
Date: Mon, 4 Oct 2021 13:23:34 -0400
Subject: [labnetwork] Dektak 3030 Repair
Message-ID: <CAEXS_M-eN=FCUjukt=59sFR7VnmcdJSW490VjvcCXqzuU-_GkQ@mail.gmail.com>

Does anyone have a contact for repair of this system?
Currently it has a raster on the screen but no video shows up.

Thanks, Jim

-- 
*James Mitchell*
*Specialty Trades Technician*
*Dept. of Electrical and Computer Engineering*
*NCSU Nanofabrication Facility*
*MRC RM243A **Box 7911*
*2410 Campus Shore Dr., Raleigh, NC 27606*
*jtmitch5 at ncsu.edu* <jtmitch5 at ncsu.edu>
*Desk: 919-515-5394*
*Cell: 919-717-7325*
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From fazel.zarebidoky at dupont.com  Mon Oct  4 13:41:18 2021
From: fazel.zarebidoky at dupont.com (Zare Bidoky, Fazel)
Date: Mon, 4 Oct 2021 17:41:18 +0000
Subject: [labnetwork] Microfabricator position at DuPont, Wilmington, DE
In-Reply-To: <BYAPR11MB28050E260A02F5EC99D7A63BE5AE9@BYAPR11MB2805.namprd11.prod.outlook.com>
References: <BYAPR11MB2805D3B0A57102710835F3F0E5AE9@BYAPR11MB2805.namprd11.prod.outlook.com>
 <BYAPR11MB2805D925CEB8DFD294ED8CDCE5AE9@BYAPR11MB2805.namprd11.prod.outlook.com>
 <BYAPR11MB28050E260A02F5EC99D7A63BE5AE9@BYAPR11MB2805.namprd11.prod.outlook.com>
Message-ID: <BYAPR11MB2805DC1F1A09040391C9D21AE5AE9@BYAPR11MB2805.namprd11.prod.outlook.com>

Hi Sir/Madam,

We have a new posting, would you mind again help us to find the right candidate for it? It will come with a relocation benefit. This would be a great opportunity for someone with 3-5 years of cleanroom experience. I really appreciate it if you share it with your broader audience. Recently graduated undergrads who worked in the cleanroom and helped you maintaining it and running projects would be a perfect applicant for us.

217405W Associate Investigator - Semiconductor / Microelectronics Process Specialist (Open)

https://dupont.wd5.myworkdayjobs.com/Jobs/job/Wilmington-DE-200-Powder-Mill-Road/Associate-Investigator---Cleanroom-Facilities-Specialist_217405W


Let me know if I can provide any further information. I would be more than happy to talk to any potential candidate you refer.
Again, I appreciate your time, consideration, and help.
Fazel


Fazel Zare Bidoky Ph.D. Research Investigator
Microfabrication Lab Leader
Applied Engineering
Electronics & Industrial
DuPont Specialty Products USA, LLC
Pronouns: He/Him/His
_____________
Office Number: +1-302-695-1343
Experimental Station (E336/A121-2)
200 Powder Mill Road
Wilmington, DE 19803
new.dupont.com <https://www.new.dupont.com/>
[cid:image001.png at 01D49090.97C77A70]
Connect with us: [Facebook] <https://www.facebook.com/dupontco/> [Linkedin] <https://www.linkedin.com/company/dupont/> [Twitter] <https://twitter.com/DuPont_News>


This communication is for use by the intended recipient and contains information that may be Privileged, confidential or copyrighted under applicable law. If you are not the intended recipient, you are hereby formally notified that any use, copying or distribution of this e-mail,in whole or in part, is strictly prohibited. Please notify the sender by return e-mail and delete this e-mail from your system. Unless explicitly and conspicuously designated as "E-Contract Intended", this e-mail does not constitute a contract offer, a contract amendment, or an acceptance of a contract offer. This e-mail does not constitute a consent to the use of sender's contact information for direct marketing purposes or for transfers of data to third parties.


Francais Deutsch Italiano Espanol Portugues Japanese Chinese Korean

https://www.dupont.com/email-disclaimer.html
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From peterggordon at gmail.com  Wed Oct  6 11:31:25 2021
From: peterggordon at gmail.com (Peter Gordon)
Date: Wed, 6 Oct 2021 11:31:25 -0400
Subject: [labnetwork] Cl-containing precursors on a Picosun ALD tool
Message-ID: <CAB7+dW9Eg8CSooUX57ZYiDd-CKsDn6e013=p2D1VCOFm00cN5g@mail.gmail.com>

Hi all,

Does anyone have any experience with precursors like TiCl4 that potentially
produce HCl as a byproduct? Is the default Picosun powder trap enough, or
should additional abatement be enforced before the pump (in our case, an
oil pump)?

Thanks in advance,
Peter

-- 
Peter G. Gordon, PhD
CU NanoFab Facility Administrator
Department of Chemistry
Carleton University
(613) 520-2600 ext.7561
https://carleton.ca/fanssi/
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From cibuzar at umn.edu  Wed Oct  6 12:02:00 2021
From: cibuzar at umn.edu (Gregory Cibuzar)
Date: Wed, 6 Oct 2021 11:02:00 -0500
Subject: [labnetwork] Univ of MN Job Opening
Message-ID: <CAE86DOnVNfkevcsiCczk=J-nFvEDJou67NtJFKk0CKJkhS_UZg@mail.gmail.com>

Greetings all,
We have an opening at the University of Minnesota for the Associate
Director of Lab Operations.  A lengthy description is below, including a
link for applying.  If you have specific questions about the position feel
free to send me an email.  Since it's my position, I'm pretty familiar with
the role.  I plan on retiring sometime in the first quarter of 2022.
Regards,
Greg

Greg Cibuzar
Manager, Minnesota Nano Center
www.mnc.umn.edu
University of Minnesota
612-625-8079

The Minnesota Nano Center (MNC) at the University of Minnesota-Twin Cities
seeks a new Associate Director for Laboratory Operations.



The MNC is a state-of-the-art facility for interdisciplinary research in
nanoscience and applied nanotechnology. The facility comprises two
cleanrooms with approximately 8,000 square feet of class-100 space, and
4,000 square feet of additional laboratories and support areas. It supports
over 300 individual lab members from ~80 different faculty groups spanning
dozens of departments across the University. Approximately 100 external
users from industry and other academic institutions also make use of MNC
facilities.  Over the past several decades the MNC has contributed to a
wide range of breakthrough research, and also acts as an important
incubator for start-up companies and larger industrial users to prototype
new nano-scale concepts. The MNC is part of the National Nanotechnology
Coordinated Infrastructure (NNCI), an NSF-supported group of open-access
nanotechnology labs located across the United States.

The candidate for Associate Director of Laboratory Operations should
possess a masters or doctorate in a relevant field, and a proven record of
accomplishment of research, development, or manufacturing in either an
academic or industry setting. The ideal candidate will have extensive
experience in cleanroom operations and management, and broad knowledge of
micro- and nano-fabrication processes and equipment. The candidate should
also have experience in project and personnel management.

The position is responsible for:
Staff supervision, oversight of lab operations and equipment maintenance,
safety compliance, external sales, facility and equipment training
protocols, identification and acquisition of new capital equipment in the
lab, assisting in annual budgeting and equipment rates setting,
participating in NNCI program activities, leading the Northern Nano Lab
Alliance (NNLA), a regional network of university fabrication facilities,
and creating a workplace environment that promotes fairness, diversity, and
equal opportunity, and that is consistent with the values of the University.

The desired start date for this position is February 1, 2022. Salary is
negotiable and commensurate with skills and experience.

Applications must be submitted online at:
Internal UMN applicants: https://hr.myu.umn.edu/jobs/int/343852
External applicants: https://hr.myu.umn.edu/jobs/ext/343852


To apply for this position, candidates should provide a resume, a cover
letter articulating relevant experience, a statement on commitment to
diversity, and names and contact information for three references.

More information about the MNC may be found on our website: cse.umn.edu/mnc
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From sandra.malhotra at tamu.edu  Wed Oct  6 15:33:47 2021
From: sandra.malhotra at tamu.edu (Malhotra, Sandra Guy)
Date: Wed, 6 Oct 2021 19:33:47 +0000
Subject: [labnetwork] Research Engineer IV opportunity at Texas A&M
 University
Message-ID: <SA2PR11MB4873C9BC412D4E22AC029F8288B09@SA2PR11MB4873.namprd11.prod.outlook.com>

Howdy All,
I'd like to share a job opportunity at AggieFab at Texas A&M University in College Station, TX. We are seeking a Research Engineer IV who has expertise with E-beam Lithography (EBL), Focused Ion Beam (FIB), and Helium Ion Microscope (HIM) nanopatterning systems. Please see job posting here for a complete description: https://tamus.wd1.myworkdayjobs.com/TEES_External/job/College-Station-TEES/Research-Engineer-IV_R-042608 . Feel free to share this with your networks.

Best,

Sandra G. Malhotra, Ph.D.  |  Technical Lab Manager
AggieFab Nanofabrication Facility
Department of Electrical & Computer Engineering, College of Engineering | Texas A&M University
3253 TAMU | College Station, TX 77843
ph: 979.845.3199  |  s<mailto:hprichard at tamu.edu>andra.malhotra at tamu.edu<mailto:andra.malhotra at tamu.edu>
- - - - - - - - - - - - - - - - - - - - - - - -
TEXAS A&M UNIVERSITY | FEARLESS on Every Front

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From tintolinni at gmail.com  Thu Oct  7 00:34:45 2021
From: tintolinni at gmail.com (Lomo Tintolinni)
Date: Thu, 7 Oct 2021 12:34:45 +0800
Subject: [labnetwork] Fuji SC450
Message-ID: <CAKoJ3_WtyK3TByvgEOX3QGV1a3K2dceiOMii5EqfwodsN90Q1w@mail.gmail.com>

Hi All,

For a MEMS lab assignment, I?m looking into Fuji SC450 negative resist,
does anyone know what's the quote price per gallon or liter?

Thanks a lot! : )

Mark Tintolinni
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From price.798 at osu.edu  Thu Oct  7 11:52:36 2021
From: price.798 at osu.edu (Price, Aimee)
Date: Thu, 7 Oct 2021 15:52:36 +0000
Subject: [labnetwork] MAEBL (Meeting for Advanced Ebeam Lithography) Nov
 9-10, 2021 UPenn
Message-ID: <CH0PR01MB7139CE575EF652C2E932E983BCB19@CH0PR01MB7139.prod.exchangelabs.com>

Lab Network Members,
I'd like to invite all electron beam lithography users and tool owners to join us at MAEBL 2021<https://maebl.org/>.  The program is nearly complete and available here<https://drive.google.com/file/d/1-EDr3-0Ox8VkwGohdlPuEaHquJCsGT2u/preview>.

The 5th Meeting for Advanced Electron Beam Lithography (MAEBL) will be held November 9-10, 2021, at the University of Pennsylvania Singh Center for Nanotechnology. The hybrid event will stream the live talks through the GatherTown platform, but attendees are also welcome to attend in person. Register at https://maebl.eventbrite.com<https://urldefense.com/v3/__https:/maebl-dot-yamm-track.appspot.com/Redirect?ukey=1fGOBC5B7H64UtzsVD8RpYs-wICjaAy5Y3n8MhDWUUlA-836395278&key=YAMMID-27463654&link=https*3A*2F*2Fmaebl.eventbrite.com__;JSUl!!KGKeukY!m5pUJNHCsgyEaFEIEeVfEA0EFhB2Lm9My8-0qu4pclOOI5rvGUsvZ4XShqLSOw6Srz0$>. Registration is the same ($150) if you are attending online or in person. If you register by October 8, 2021, you'll receive a commemorative t-shirt by mail featuring our sponsors.

We are planning the hybrid MAEBL 2021 meeting as a two-day event. The first day features the MAEBL Foundations Workshop geared for novice/beginners in electron beam lithography. It is highly recommended for academic researchers who are seeking guidance during the onset of their nano-lithographic work. Learn the fundamentals in machine agnostic tool operation, data preparation, process development, etc. Novice to advanced e-beam lithographers are invited to participate in the Foundations Workshop to learn, brush up, or help mentor others on EBL fundamentals. Advanced attendees are encouraged to impart personal accounts and challenges to the audience, elevating the workshop experience. At the end of the meeting, beginners should be conversant in EBL and be encouraged to participate in the MAEBL Core Workshop.

Day Two is the Core Workshop that started it all. Be part of the conversation and learn something new (or old). Arrive early to network, receive your name badge, and grab a coffee/light continental breakfast. Bring your business cards, laptop computer with designs and SEM images of your issues, and an open mind. The goal of the meeting is to connect active novice to experienced EBL tool owners and users to openly exchange practical and directly applicable EBL knowledge in an open forum format. The event features invited talks from users in the field. In the years past, attendees have networked with like-minded researchers and scientists and witnessed invited talks from Argonne National Laboratory, the National Institute of Standards and Technology, IBM, Ohio State University, The Pennsylvania State University, the University of Delaware, Brookhaven National Laboratory, Caltech, Yale, the University of Pennsylvania, Sandia National Laboratory and MIT (to name a few).

Register at https://maebl.eventbrite.com<https://urldefense.com/v3/__https:/maebl-dot-yamm-track.appspot.com/Redirect?ukey=1fGOBC5B7H64UtzsVD8RpYs-wICjaAy5Y3n8MhDWUUlA-836395278&key=YAMMID-27463654&link=https*3A*2F*2Fmaebl.org*2F__;JSUlJQ!!KGKeukY!m5pUJNHCsgyEaFEIEeVfEA0EFhB2Lm9My8-0qu4pclOOI5rvGUsvZ4XShqLSTtlugLk$> and feel free to invite others that might be interested.  Registration is only $150 for full meeting access, whether attending online or physically.

As you are well aware with the ongoing COVID pandemic, the situation remains fluid and may require us to pivot to a completely online event. If we go completely virtual, the meeting will be rescheduled to 3 pm - 5 pm EST, November 8-12, 2021, to accommodate our international community.

Regards,
Aimee Bross Price
Manager, Nanofabrication
The Ohio State University
Nanotech West Lab
Institute for Materials Research
1381 Kinnear Road
Suite 100
Columbus, OH 43212
614-292-2753


MAEBL Steering Committee
Aimee Price (OSU), President and Co-Founder
Mark Mondol (MIT), Vice President
Mason Risley (CMU), Secretary
Kevin Lister (Facebook), Co-Founder and Steering Committee Member
Guy Derose (Caltech), Steering Committee Member
Justin Wirth (Purdue), Steering Committee Member
Gerald Lopez (UPenn), Board Chair and Co-Founder



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From diadiuk at mit.edu  Fri Oct  8 09:17:56 2021
From: diadiuk at mit.edu (Vicky Diadiuk)
Date: Fri, 8 Oct 2021 13:17:56 +0000
Subject: [labnetwork] Verteq 6" SRD available
Message-ID: <EECE6549-46DD-4CC4-9C56-5F906E3245FC@mit.edu>

Hi,
We have a fully functional Verteq 6? SRD, Model 1600-34 looking for a good home.
Pls contact me directly if you can use it.

Thx,
Vicky
 

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From manish.keswani01 at gmail.com  Fri Oct  8 16:18:55 2021
From: manish.keswani01 at gmail.com (Manish Keswani)
Date: Fri, 8 Oct 2021 13:18:55 -0700
Subject: [labnetwork] plasma etching of niobium
Message-ID: <CAL2xBHBkiMdpN5BmL+V5zkQa0UPQS5bj5U8med649Swur+w7YA@mail.gmail.com>

Happy Friday Everyone,

I have a question about the plasma etching of Niobium. One of our customers
is interested in creating sloped sidewall (45 deg, trapezoidal) patterns in
Nb (500 nm thick film). Although we have some experience creating similar
patterns in silicon and have a general idea about which direction to go in
terms of process parameters, we have not done this for Nb. The features are
600 microns x 600 microns or 3 microns x 600 microns openings after the
Litho step.

Does anyone have suggestions?

Thanks,
Manish Keswani
Lawrence Livermore National Laboratory
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From kamal.yadav at gmail.com  Fri Oct  8 23:07:34 2021
From: kamal.yadav at gmail.com (Kamal Yadav)
Date: Fri, 8 Oct 2021 20:07:34 -0700
Subject: [labnetwork] plasma etching of niobium
In-Reply-To: <CAL2xBHBkiMdpN5BmL+V5zkQa0UPQS5bj5U8med649Swur+w7YA@mail.gmail.com>
References: <CAL2xBHBkiMdpN5BmL+V5zkQa0UPQS5bj5U8med649Swur+w7YA@mail.gmail.com>
Message-ID: <CAOfoCyh7RfqRuBNEz-DqRjTVgOOyNxVjc=XhWKv9jsSfsuG4wQ@mail.gmail.com>

Hi Manish,

Will positive resist give you 45 degree walls for some dose & focus
condition in your exposure tool, probably that's possible, I think if you
explore the range. And then if you dry etch, the profile should transfer to
Nb in CF4 chemistry or the chemistry you want to use. Your mask needs to be
made (shifted) accordingly such that your features are trapezoidal, smaller
dimension on top.

Not sure if you have considered this.

On Fri, Oct 8, 2021 at 5:11 PM Manish Keswani <manish.keswani01 at gmail.com>
wrote:

> Happy Friday Everyone,
>
> I have a question about the plasma etching of Niobium. One of our
> customers is interested in creating sloped sidewall (45 deg, trapezoidal)
> patterns in Nb (500 nm thick film). Although we have some experience
> creating similar patterns in silicon and have a general idea about which
> direction to go in terms of process parameters, we have not done this for
> Nb. The features are 600 microns x 600 microns or 3 microns x 600 microns
> openings after the Litho step.
>
> Does anyone have suggestions?
>
> Thanks,
> Manish Keswani
> Lawrence Livermore National Laboratory
>
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>


-- 
Thanks,
Kamal
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From Aju.Jugessur at Colorado.EDU  Mon Oct 11 15:50:20 2021
From: Aju.Jugessur at Colorado.EDU (Aju Jugessur)
Date: Mon, 11 Oct 2021 19:50:20 +0000
Subject: [labnetwork] ISO 5 Cleanroom RH
Message-ID: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>


Hello all,

I am reaching out to obtain some inputs on your cleanroom relative humidity (RH).
We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other cleanroom fabrication processes, the cleanroom will support EBeam nanolithography work.
The system to control RH within the required specs is quite expensive and I would like to know if anyone in the network is able to relax the RH specs, without compromising processes OR have alternative ways of locally controlling the RH, say in the actual litho. bay areas or hoods?

Your inputs are very much appreciated.

Thanks
Aju




Aju Jugessur Ph.D. IEEE Sr. Member
Director, Colorado Shared Instrumentation
in Nanofabrication and Characterization (COSINC) Facility
Member of Inclusive Culture Council (ICC)
Member of Engineering Staff Council (ESC)
University of Colorado Boulder | College of Engineering & Applied Science
4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
E-mail: aju.jugessur at colorado.edu<mailto:aju.jugessur at colorado.edu>
Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
www.colorado.edu/facility/cosinc<http://www.colorado.edu/facility/cosinc>

[signature_1686830665]

Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
(CliftonStrengths)


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From rmorrison at draper.com  Tue Oct 12 08:06:01 2021
From: rmorrison at draper.com (Morrison, Richard H., Jr)
Date: Tue, 12 Oct 2021 12:06:01 +0000
Subject: [labnetwork] ISO 5 Cleanroom RH
In-Reply-To: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
References: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
Message-ID: <2fea31e5586f4649baf67869e0250ce6@draper.com>

The Draper clean room is 7700sqft of mixed use cleanrooms . Our makeup air unit provides 22000 cfm or 68F +-2F  and 45% RHM +-3%. It uses a steam generator with a dispersion coil in the main duct to add steam in the winter and a cooling coil to reduce RH in the summer. When we designed the cleanroom we asked this forum what our RH spec should be and it was clear that 45% was the preferred RH.

Rick


Richard Morrison
PMTS
Draper Laboratory
555 Technology Square
Cambridge Ma  02139
Office: 617-258-3420
Cell: 508-930-3461


From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Aju Jugessur
Sent: Monday, October 11, 2021 3:50 PM
To: labnetwork at mtl.mit.edu
Cc: labnetwork <labnetwork-bounces at mtl.mit.edu>
Subject: [labnetwork] ISO 5 Cleanroom RH


Hello all,

I am reaching out to obtain some inputs on your cleanroom relative humidity (RH).
We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other cleanroom fabrication processes, the cleanroom will support EBeam nanolithography work.
The system to control RH within the required specs is quite expensive and I would like to know if anyone in the network is able to relax the RH specs, without compromising processes OR have alternative ways of locally controlling the RH, say in the actual litho. bay areas or hoods?

Your inputs are very much appreciated.

Thanks
Aju




Aju Jugessur Ph.D. IEEE Sr. Member
Director, Colorado Shared Instrumentation
in Nanofabrication and Characterization (COSINC) Facility
Member of Inclusive Culture Council (ICC)
Member of Engineering Staff Council (ESC)
University of Colorado Boulder | College of Engineering & Applied Science
4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
E-mail: aju.jugessur at colorado.edu<mailto:aju.jugessur at colorado.edu>
Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
www.colorado.edu/facility/cosinc<http://www.colorado.edu/facility/cosinc>

[signature_1686830665]

Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
(CliftonStrengths)


________________________________
Notice: This email and any attachments may contain proprietary (Draper non-public) and/or export-controlled information of Draper. If you are not the intended recipient of this email, please immediately notify the sender by replying to this email and immediately destroy all copies of this email.
________________________________
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From deonc69 at illinois.edu  Tue Oct 12 08:54:49 2021
From: deonc69 at illinois.edu (Collins, Deon)
Date: Tue, 12 Oct 2021 12:54:49 +0000
Subject: [labnetwork] ISO 5 Cleanroom RH
In-Reply-To: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
References: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
Message-ID: <DM6PR11MB31622601747F698E52655501D7B69@DM6PR11MB3162.namprd11.prod.outlook.com>

My guess is you are in a relatively dry climate area?

Deon D. Collins

FACILITY MANAGER
Holonyak Lab
University of Illinois at Urbana-Champaign
208 N Wright St Rm. 248 | 2250
Urbana, IL 61801
217-300-7531 | deonc69 at illinois.edu<mailto:deonc69 at illinois.edu>


[https://webtools.illinois.edu/webservices/js/ds/signature_logo.png]<http://illinois.edu/>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

I?m so tired of being tired, Sure as night will follow day, Most things I worry about never happen anyway.

                                                                                                                                                                             Tom Petty

From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Aju Jugessur
Sent: Monday, October 11, 2021 2:50 PM
To: labnetwork at mtl.mit.edu
Cc: labnetwork <labnetwork-bounces at mtl.mit.edu>
Subject: [labnetwork] ISO 5 Cleanroom RH


Hello all,

I am reaching out to obtain some inputs on your cleanroom relative humidity (RH).
We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other cleanroom fabrication processes, the cleanroom will support EBeam nanolithography work.
The system to control RH within the required specs is quite expensive and I would like to know if anyone in the network is able to relax the RH specs, without compromising processes OR have alternative ways of locally controlling the RH, say in the actual litho. bay areas or hoods?

Your inputs are very much appreciated.

Thanks
Aju




Aju Jugessur Ph.D. IEEE Sr. Member
Director, Colorado Shared Instrumentation
in Nanofabrication and Characterization (COSINC) Facility
Member of Inclusive Culture Council (ICC)
Member of Engineering Staff Council (ESC)
University of Colorado Boulder | College of Engineering & Applied Science
4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
E-mail: aju.jugessur at colorado.edu<mailto:aju.jugessur at colorado.edu>
Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
www.colorado.edu/facility/cosinc<https://urldefense.com/v3/__http:/www.colorado.edu/facility/cosinc__;!!DZ3fjg!rrDhq91GHez5v_Nm8NrfXRtXugnTGC5afbwckTlq1iy9y-MQIXe1otvUR6stF3ySLNc$>

[signature_1686830665]

Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
(CliftonStrengths)


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From fabien.dauzou at edgehogtech.com  Tue Oct 12 09:20:37 2021
From: fabien.dauzou at edgehogtech.com (Fabien Dauzou)
Date: Tue, 12 Oct 2021 13:20:37 +0000
Subject: [labnetwork] Process Engineer/Technician opportunity
Message-ID: <DM6PR20MB28413CB62BFAC5FA4BEA6BA3F5B69@DM6PR20MB2841.namprd20.prod.outlook.com>

Dear everyone,

We have a job opportunity for a Process Engineer/Technician at Edgehog Advanced Technologies Inc. (CA, Montreal)

https://www.linkedin.com/jobs/view/2729481300

Our company

Edgehog is commercializing ground-breaking anti-reflection glass technology inspired by nature. We are seeking motivated individuals to help shape our vision of green energy generation with solar panels and launch other product lines in automotive, displays, space, and cameras. The Edgehog team works in a collaborative open-concept workspace. Diversity is part of our founding identity, and we value input from multiple perspectives. Edgehog is a fast-growing company with lots of opportunities for professional development within the organization.

Role and Responsibilities

As a process scientist/engineer at Edgehog, you will work collaboratively within a team from diverse technical backgrounds including solar engineering, materials science, micro-fabrication, chemistry, physics, etc.

Your primary responsibilities will include glass treatment processes, quality assurance testing, process development and optimization, product integration, and other development projects. Secondary responsibilities include supporting sales and marketing staff in developing technical materials for external engagement.

This full-time hands-on position is in Montreal where you will work mostly at the Edgehog facility, and occasionally in partner facilities in Montreal. Occasional travel inside and outside the province may be required.

Who we are looking for:

MSc / MASc and above in materials science/engineering, micro-fabrication, device fabrication, manufacturing, solar engineering, chemistry, experimental physics, or other relevant fields
Candidates with a Bachelors and 2+ years of industry experience in above mentioned fields will also be considered
Experience in wet lab, clean room, semiconductor fabrication facilities, or similar
Preferred: knowledge of plasma physics, polymer or surface chemistry, or optics
A pro-active team-player with strong hands-on skills, willingness to innovate, and a strong ability to multi-task.

Benefits

Competitive base salary and generous benefits
Opportunity to participate in significant upside growth and personal development along with the company
Dynamic and diverse work environment, learning-oriented culture and fun events!

Best regards, Bien cordialement,

Fabien Dauzou
Photovoltaic Enthusiast | Edgehog Eng./Entrepreneur | Cleantech Optimist
fabien at edgehogtech.com<mailto:fabien at edgehogtech.com>
Mob: 438-868-1657
https://www.edgehogtech.com/
[cid:image001.png at 01D7BF4A.68CC65F0]
780 Av. Brewster, RC-016, Montreal, QC, Canada, H4C 2K1
Think green, before printing this email.
[SF_TAG_MEMBER_OF_CMYK]
Winner of the 2020 CES Climate Change Innovator Award


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From michael.rooks at yale.edu  Tue Oct 12 12:45:31 2021
From: michael.rooks at yale.edu (Michael Rooks)
Date: Tue, 12 Oct 2021 12:45:31 -0400
Subject: [labnetwork] ISO 5 Cleanroom RH
In-Reply-To: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
References: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
Message-ID: <CAMH=VojrcwRbQ7SownAKeAx6DGv-gpBX4vYfRZZ-_VGaY7eUZw@mail.gmail.com>

Humidity control is mainly for photoresist processing. E-beam resists such
as pmma, csar, and hsq are not sensitive to the humidity and do not require
tight control. Even when using MIBK:IPA developer, there will be no
problems when developing pmma, as long as the wafers are stored in a dry
box. I'm not sure about MaN resist, but perhaps someone else can chime in
about that.

If you can design a cleanroom with humidity control just in the photo
sections, then go for it. But it might be quite difficult to split up the
air handling.

Our e-beam systems are in labs without any humidity control other than
basic air conditioning. Temperature control is an entirely different topic.

--------------------------------
Michael Rooks
nano.yale.edu


On Tue, Oct 12, 2021 at 7:39 AM Aju Jugessur <Aju.Jugessur at colorado.edu>
wrote:

>
>
> Hello all,
>
>
>
> I am reaching out to obtain some inputs on your cleanroom relative
> humidity (RH).
>
> We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other
> cleanroom fabrication processes, the cleanroom will support EBeam
> nanolithography work.
>
> The system to control RH within the required specs is quite expensive and
> I would like to know if anyone in the network is able to relax the RH
> specs, without compromising processes OR have alternative ways of locally
> controlling the RH, say in the actual litho. bay areas or hoods?
>
>
>
> Your inputs are very much appreciated.
>
>
>
> Thanks
>
> Aju
>
>
>
>
>
>
>
>
>
> Aju Jugessur Ph.D. IEEE Sr. Member
>
> Director, Colorado Shared Instrumentation
>
> in Nanofabrication and Characterization (COSINC) Facility
>
> Member of Inclusive Culture Council (ICC)
>
> Member of Engineering Staff Council (ESC)
>
> *University of Colorado Boulder | **College of Engineering & Applied
> Science*
>
> 4001 Discovery Drive, N360G SEEC *|* Boulder, CO 80303*|* *P:*
>  303.735.5019
>
> E-mail: aju.jugessur at colorado.edu
>
> Personal Zoom link: https://cuboulder.zoom.us/my/*ajugessur*
> <https://cuboulder.zoom.us/my/ajugessur>
>
> www.colorado.edu/facility/cosinc
>
>
>
> [image: signature_1686830665]
>
>
>
>
> *Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
> (CliftonStrengths)*
>
>
>
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
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From robert.macdonald at ge.com  Tue Oct 12 19:15:38 2021
From: robert.macdonald at ge.com (Macdonald, Robert (GE Research, US))
Date: Tue, 12 Oct 2021 23:15:38 +0000
Subject: [labnetwork] Hold time after fusion bond
Message-ID: <CE13796B-B682-4983-B3B8-287309C23689@ge.com>

I am looking for information on the limits of hold time after a fusion bond. 

Whether it be Si to Si or Si to SiO2 or SiO2 to SiO2; Whether hydrophobic or hydrophilic, for what amount of time can the bonded pair be held prior to anneal? 

I have not found a paper with this information. We have had success with times under sixteen hours. But we have not done a thorough study. 

Any input welcome. 

Thanks,
Rob MacDonald
GE Research



Sent from my iPhone

From mtkhbeis at gmail.com  Wed Oct 13 06:28:34 2021
From: mtkhbeis at gmail.com (mtkhbeis at gmail.com)
Date: Wed, 13 Oct 2021 03:28:34 -0700
Subject: [labnetwork] ISO 5 Cleanroom RH
In-Reply-To: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
References: <50A1D3E2-8280-4360-8C5D-70F9A4DC617F@colorado.edu>
Message-ID: <3DE3139C-1E87-45FD-BAA0-74E9C8B1D200@gmail.com>

Aju 

As Rich said, I usually target 45+/-5% RH. You can use your litho/EBL suites to drive localized humidification. Highly recommend, putting in the infrastructure if you can into the rooftop air handlers. If you need dehumidification then do it in the air handler at the first stage. You will almost certainly always be demanding humidification of the litho space as the humidity diffuses into adjacent areas/bays. If humidifying in the air handler make sure you put in at least an RO system to minimize humidifier maintenance. 

A lower cost/minor mod solution can be more localized using in duct steam grids. If using localized generators, I highly recommend using clean steam fed by your UPW loop as servicing of standard humidifiers using city water is a nightmare due to mineral deposits - speaking from experience here. DRISTEEM is one vendor that makes all stainless construction units that can handle the corrosive nature of the UPW and will drive demand based on localized sensors in the litho bay vs. added cost and complexity of adding controls into your BMI infrastructure.  

Best,

Dr. Michael Khbeis
(C) 443.254.5192

> On Oct 12, 2021, at 4:36 AM, Aju Jugessur <Aju.Jugessur at colorado.edu> wrote:
> ?
>  
> Hello all,
>  
> I am reaching out to obtain some inputs on your cleanroom relative humidity (RH).
> We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other cleanroom fabrication processes, the cleanroom will support EBeam nanolithography work.
> The system to control RH within the required specs is quite expensive and I would like to know if anyone in the network is able to relax the RH specs, without compromising processes OR have alternative ways of locally controlling the RH, say in the actual litho. bay areas or hoods?
>  
> Your inputs are very much appreciated.
>  
> Thanks
> Aju
>  
>  
>  
>  
> Aju Jugessur Ph.D. IEEE Sr. Member
> Director, Colorado Shared Instrumentation
> in Nanofabrication and Characterization (COSINC) Facility
> Member of Inclusive Culture Council (ICC)
> Member of Engineering Staff Council (ESC)
> University of Colorado Boulder | College of Engineering & Applied Science
> 4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
> E-mail: aju.jugessur at colorado.edu
> Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
> www.colorado.edu/facility/cosinc
>  
> 
> <image001.png>
>  
> Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
> (CliftonStrengths)
>  
>  
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
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From Matt.Dwyer at drs.com  Wed Oct 13 16:17:01 2021
From: Matt.Dwyer at drs.com (Dwyer, Matt)
Date: Wed, 13 Oct 2021 20:17:01 +0000
Subject: [labnetwork] Pricing on used modular cleanrooms?
Message-ID: <037fa5ac737340fc93d58fd157ec46d0@drs.com>

Hi all,

 

Can anyone provide a feel for the going price of used modular hardwall
cleanrooms, say 36'x48' class 1000 recirculating? We are looking at used
cleanroom options but have no gauge for what pricing is reasonable, or if
used cleanrooms hold their value. Any insight or educated guesses would be
greatly appreciated.

 

Also, if anyone has experience with outsourcing modular cleanroom tear down,
transport, and setup, we would definitely appreciate any advice.

 

Thanks,

Matt

 

 
<https://www.leonardodrs.com/?utm_source=employees&utm_medium=email&utm_camp
aign=signature&utm_content=logo> 

            Matt Dwyer

            Principal Process Engineer

 

            DRS Daylight Solutions

            1832 Wright St, Madison, WI 53704 USA

            Tel +1 608 287 3785

           <mailto:matt.dwyer at drs.com> matt.dwyer at drs.com

           <http://www.leonardodrs.com/> leonardodrs.com


           <http://www.daylightsolutions.com/> daylightsolutions.com

 

 
<https://www.linkedin.com/company/leonardodrs/?utm_source=employees&utm_medi
um=email&utm_campaign=signature&utm_content=linkedin-icon>
<https://twitter.com/LeonardoDRSnews?utm_source=employees&utm_medium=email&u
tm_campaign=signature&utm_content=twitter-icon>
<https://www.facebook.com/leonardodrsinc/?utm_source=employees&utm_medium=em
ail&utm_campaign=signature&utm_content=fb-icon>
<https://www.instagram.com/leonardodrs/?utm_source=employees&utm_medium=emai
l&utm_campaign=signature&utm_content=instagram-icon>
<https://www.youtube.com/c/leonardodrs?utm_source=employees&utm_medium=email
&utm_campaign=signature&utm_content=youtube-icon> 

 

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From manish.keswani01 at gmail.com  Thu Oct 14 02:43:48 2021
From: manish.keswani01 at gmail.com (Manish Keswani)
Date: Wed, 13 Oct 2021 23:43:48 -0700
Subject: [labnetwork] plasma etching of niobium
In-Reply-To: <CAOfoCyh7RfqRuBNEz-DqRjTVgOOyNxVjc=XhWKv9jsSfsuG4wQ@mail.gmail.com>
References: <CAL2xBHBkiMdpN5BmL+V5zkQa0UPQS5bj5U8med649Swur+w7YA@mail.gmail.com>
 <CAOfoCyh7RfqRuBNEz-DqRjTVgOOyNxVjc=XhWKv9jsSfsuG4wQ@mail.gmail.com>
Message-ID: <CAL2xBHD0gUvLn0jtmyG9yysFv8mEM0X5=RJpPHn_7r3qT835xQ@mail.gmail.com>

Thank you Kamal for your response. I wanted to talk to a few folks on this
topic and get their input before replying to your email so I couldn't get
back to you sooner.

I think with plasma etch, it may not be that straightforward to create this
pattern. If we select a higher ratio of C4F8 to CF4, it will passivate more
on the top and less on the bottom, which will provide a tapered profile
(trapezoidal, smaller opening at the top), but it may be challenging to
achieve a slope of 45 deg.

Another option is to create a resits profile with a 45 deg slope
(trapezoid) using grayscale lithography and then fill the openings (inverse
trapezoid, larger top) with the metal (Nb) using sputter or ebeam,
planarize, and remove the resist.

Let me know if this doesn't make sense.

Thanks,
Manish


On Fri, Oct 8, 2021 at 8:07 PM Kamal Yadav <kamal.yadav at gmail.com> wrote:

> Hi Manish,
>
> Will positive resist give you 45 degree walls for some dose & focus
> condition in your exposure tool, probably that's possible, I think if you
> explore the range. And then if you dry etch, the profile should transfer to
> Nb in CF4 chemistry or the chemistry you want to use. Your mask needs to be
> made (shifted) accordingly such that your features are trapezoidal, smaller
> dimension on top.
>
> Not sure if you have considered this.
>
> On Fri, Oct 8, 2021 at 5:11 PM Manish Keswani <manish.keswani01 at gmail.com>
> wrote:
>
>> Happy Friday Everyone,
>>
>> I have a question about the plasma etching of Niobium. One of our
>> customers is interested in creating sloped sidewall (45 deg, trapezoidal)
>> patterns in Nb (500 nm thick film). Although we have some experience
>> creating similar patterns in silicon and have a general idea about which
>> direction to go in terms of process parameters, we have not done this for
>> Nb. The features are 600 microns x 600 microns or 3 microns x 600 microns
>> openings after the Litho step.
>>
>> Does anyone have suggestions?
>>
>> Thanks,
>> Manish Keswani
>> Lawrence Livermore National Laboratory
>>
>>
>> _______________________________________________
>> labnetwork mailing list
>> labnetwork at mtl.mit.edu
>> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>>
>
>
> --
> Thanks,
> Kamal
>
>
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From info at fabsurplus.com  Thu Oct 14 04:05:25 2021
From: info at fabsurplus.com (Stephen Howe)
Date: Thu, 14 Oct 2021 10:05:25 +0200
Subject: [labnetwork] Pricing on used modular cleanrooms?
In-Reply-To: <037fa5ac737340fc93d58fd157ec46d0@drs.com>
References: <037fa5ac737340fc93d58fd157ec46d0@drs.com>
Message-ID: <36ed22c5565b9dfd6823abaecd2e39ca20370684.camel@fabsurplus.com>

Dear Matt,
I am a used semiconductor equipment dealer, but I have bought and sold
also cleanrooms and facilities equipment.The prices have a lot of
variation. This is because cleanrooms are bulky and difficult to store,
and also get damaged if you store then in unsuitable conditions e.g. a
damp warehouse. So, if an owner has a lot of cleanroom they need to
remove, then they will drop the price down a lot to free up the space.
If you can contact me directly so as I can understand your
requirements, and if you are buying or selling, then I can have a look
round to see if I can find something suitable.
Yours sincerely,
SDI Fabsurplus GroupStephen HoweCompany Owneremail: 
info at fabsurplus.comMobile (USA) : +1 830-388-1071Mobile (Italy) : +39
335-710-7756WWW.FABSURPLUS.COMYour Marketplace for Used Semiconductor
Equipment
On Wed, 2021-10-13 at 20:17 +0000, Dwyer, Matt wrote:
> Hi all,
>  
> Can anyone provide a feel for the going price of used modular
> hardwall cleanrooms, say 36?x48? class 1000 recirculating? We are
> looking at used cleanroom options but have no gauge for what pricing
> is reasonable, or if used cleanrooms hold their value. Any insight or
> educated guesses would be greatly appreciated.
>  
> Also, if anyone has experience with outsourcing modular cleanroom
> tear down, transport, and setup, we would definitely appreciate any
> advice.
>  
> Thanks,
> Matt
>  
> 
>             Matt Dwyer
>             Principal Process Engineer
>  
>             DRS Daylight Solutions
>             1832 Wright St, Madison, WI 53704 USA
>             Tel +1 608 287 3785
>           matt.dwyer at drs.com
>           leonardodrs.com
>                                                                      
>                               
>           daylightsolutions.com
>  
>                     
>  
> _______________________________________________labnetwork mailing
> listlabnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
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From fazel.zarebidoky at dupont.com  Thu Oct 14 08:35:20 2021
From: fazel.zarebidoky at dupont.com (Zare Bidoky, Fazel)
Date: Thu, 14 Oct 2021 12:35:20 +0000
Subject: [labnetwork] Orbotech laser direct imaging
Message-ID: <DM6PR11MB2812671D678CC57824B8866EE5B89@DM6PR11MB2812.namprd11.prod.outlook.com>

Hi Network,

I am looking for an Orbotech laser direct imaging capability to run some initial tests. I was wondering if anyone in the community has or knows of one that we can use?

In advance, I appreciate your help.

Regards,
Fazel


Fazel Zare Bidoky Ph.D. Research Investigator
Microfabrication Lab Leader
Applied Engineering
Electronics & Industrial
DuPont Specialty Products USA, LLC
Pronouns: He/Him/His
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Office Number: +1-302-695-1343
Experimental Station (E336/A121-2)
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From Aju.Jugessur at Colorado.EDU  Thu Oct 14 15:57:20 2021
From: Aju.Jugessur at Colorado.EDU (Aju Jugessur)
Date: Thu, 14 Oct 2021 19:57:20 +0000
Subject: [labnetwork] ISO 5 Cleanroom RH
Message-ID: <584AB07A-4FEF-41C5-8C71-0079127752A8@colorado.edu>

Thank you all for your kinds suggestions and inputs.
I will follow up on some of the information that colleagues have shared with me.

Thanks again,
Aju



Aju Jugessur Ph.D. IEEE Sr. Member
Director, Colorado Shared Instrumentation
in Nanofabrication and Characterization (COSINC) Facility
Member of Inclusive Culture Council (ICC)
Member of Engineering Staff Council (ESC)
University of Colorado Boulder | College of Engineering & Applied Science
4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
E-mail: aju.jugessur at colorado.edu<mailto:aju.jugessur at colorado.edu>
Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
www.colorado.edu/facility/cosinc<http://www.colorado.edu/facility/cosinc>

[signature_804197951]

Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
(CliftonStrengths)



From: labnetwork <labnetwork-bounces at mtl.mit.edu> on behalf of Aju Jugessur <Aju.Jugessur at Colorado.EDU>
Date: Tuesday, October 12, 2021 at 5:38 AM
To: "labnetwork at mtl.mit.edu" <labnetwork at mtl.mit.edu>
Cc: labnetwork <labnetwork-bounces at mtl.mit.edu>
Subject: [labnetwork] ISO 5 Cleanroom RH


Hello all,

I am reaching out to obtain some inputs on your cleanroom relative humidity (RH).
We have designed our ISO 5 cleanroom with RH (40 +/- 5 %). Among other cleanroom fabrication processes, the cleanroom will support EBeam nanolithography work.
The system to control RH within the required specs is quite expensive and I would like to know if anyone in the network is able to relax the RH specs, without compromising processes OR have alternative ways of locally controlling the RH, say in the actual litho. bay areas or hoods?

Your inputs are very much appreciated.

Thanks
Aju




Aju Jugessur Ph.D. IEEE Sr. Member
Director, Colorado Shared Instrumentation
in Nanofabrication and Characterization (COSINC) Facility
Member of Inclusive Culture Council (ICC)
Member of Engineering Staff Council (ESC)
University of Colorado Boulder | College of Engineering & Applied Science
4001 Discovery Drive, N360G SEEC | Boulder, CO 80303| P: 303.735.5019
E-mail: aju.jugessur at colorado.edu<mailto:aju.jugessur at colorado.edu>
Personal Zoom link: https://cuboulder.zoom.us/my/ajugessur
www.colorado.edu/facility/cosinc<http://www.colorado.edu/facility/cosinc>

[signature_1686830665]

Signature-Strengths: Focus, Activator, Futuristic, Strategic, Achiever
(CliftonStrengths)


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From jeffmckay at ucla.edu  Thu Oct 14 17:40:30 2021
From: jeffmckay at ucla.edu (JEFFREY MATTHEW NICOLAS MC KAY)
Date: Thu, 14 Oct 2021 14:40:30 -0700
Subject: [labnetwork] Hold time after fusion bond
In-Reply-To: <CE13796B-B682-4983-B3B8-287309C23689@ge.com>
References: <CE13796B-B682-4983-B3B8-287309C23689@ge.com>
Message-ID: <CAAfVt=V_XJwH3znXFq-U9JO2v0pGZrCR_x2CXo3A+9giEQHFpA@mail.gmail.com>

Hi Rob,

Is there any reason to hold the pair before the anneal, some other
processing being done? I assume you are doing manual wafer bonding (not
tool assisted)? During graduate work, we made a lot of manual hydrophilic
SiO2-SiO2 bonds, and did not notice any degradation on holding off anneals
in terms of bond strength/bond area for sample weeks+ old (samples kept in
~70 F environment, low humidity).

Kind Regards,
Jeff McKay

On Tue, Oct 12, 2021 at 5:06 PM Macdonald, Robert (GE Research, US) <
robert.macdonald at ge.com> wrote:

> I am looking for information on the limits of hold time after a fusion
> bond.
>
> Whether it be Si to Si or Si to SiO2 or SiO2 to SiO2; Whether hydrophobic
> or hydrophilic, for what amount of time can the bonded pair be held prior
> to anneal?
>
> I have not found a paper with this information. We have had success with
> times under sixteen hours. But we have not done a thorough study.
>
> Any input welcome.
>
> Thanks,
> Rob MacDonald
> GE Research
>
>
>
> Sent from my iPhone
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
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From darick at uw.edu  Thu Oct 14 18:08:10 2021
From: darick at uw.edu (Darick Baker)
Date: Thu, 14 Oct 2021 15:08:10 -0700
Subject: [labnetwork] anhydrous HF vapor suppliers
Message-ID: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>

Hello,

We have run out of HF in our SPTS uEtch vapor HF etching tool. We are now
rushing to get a new cylinder because we have a couple lab users who have a
critical need. We have a bottle on order, but the lead time is longer than
we or the users are comfortable with.

If anybody has suggestions for alternate sources or knows of someone who
may be willing to send us a bottle that we can replace, please let me know.

I've attached an image from the previous bottle in case that can answer any
questions.
[image: HF.png]

Thanks.

-- 
Darick Baker, PhD
Research Engineer
Washington Nanofabrication Facility
University of Washington
Fluke Hall 115, Box 352143
(206) 221-8265
Pronouns: he/him
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From blewis at eng.ufl.edu  Fri Oct 15 10:49:02 2021
From: blewis at eng.ufl.edu (Lewis,William)
Date: Fri, 15 Oct 2021 14:49:02 +0000
Subject: [labnetwork] anhydrous HF vapor suppliers
In-Reply-To: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>
References: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>
Message-ID: <BN6PR22MB0244E1C2A51E094824CF875A9BB99@BN6PR22MB0244.namprd22.prod.outlook.com>

Hi Darick,

I had a problem getting BCL3 from the regular sources and found some with Custom Gas Solutions.
https://www.customgas.com/

Cheers,
Bill Lewis
Research Service Center
University of Florida
walewis at ufl.edu<mailto:walewis at ufl.edu>
https://rsc.aux.eng.ufl.edu/




From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Darick Baker
Sent: Thursday, October 14, 2021 6:08 PM
To: Fab Network <labnetwork at mtl.mit.edu>
Subject: [labnetwork] anhydrous HF vapor suppliers

[External Email]
Hello,

We have run out of HF in our SPTS uEtch vapor HF etching tool. We are now rushing to get a new cylinder because we have a couple lab users who have a critical need. We have a bottle on order, but the lead time is longer than we or the users are comfortable with.

If anybody has suggestions for alternate sources or knows of someone who may be willing to send us a bottle that we can replace, please let me know.

I've attached an image from the previous bottle in case that can answer any questions.
[cid:image001.jpg at 01D7C1B2.32A91440]

Thanks.

--
Darick Baker, PhD
Research Engineer
Washington Nanofabrication Facility
University of Washington
Fluke Hall 115, Box 352143
(206) 221-8265
Pronouns: he/him
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From julia.aebersold at louisville.edu  Fri Oct 15 11:48:02 2021
From: julia.aebersold at louisville.edu (Aebersold,Julia W.)
Date: Fri, 15 Oct 2021 15:48:02 +0000
Subject: [labnetwork] anhydrous HF vapor suppliers
In-Reply-To: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>
References: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>
Message-ID: <DM5PR03MB30988E8F2EE48A1752A2078186B99@DM5PR03MB3098.namprd03.prod.outlook.com>

That is the same supplier we use and I am not aware of other vendors. The lead time is always an issue with the gas, so we keep an extra bottle on hand.

I believe Linde also been bought by another gas vendor or has merged and has a name change.

Cheers!

Julia Aebersold, Ph.D.
Manager, Micro/Nano Technology Center
University of Louisville
Shumaker Research Building, Room 233
2210 South Brook Street
Louisville, KY  40292
(502) 852-1572

http://louisville.edu/micronano/

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Darick Baker
Sent: Thursday, October 14, 2021 6:08 PM
To: Fab Network <labnetwork at mtl.mit.edu>
Subject: [labnetwork] anhydrous HF vapor suppliers

CAUTION: This email originated from outside of our organization. Do not click links, open attachments, or respond unless you recognize the sender's email address and know the contents are safe.
Hello,

We have run out of HF in our SPTS uEtch vapor HF etching tool. We are now rushing to get a new cylinder because we have a couple lab users who have a critical need. We have a bottle on order, but the lead time is longer than we or the users are comfortable with.

If anybody has suggestions for alternate sources or knows of someone who may be willing to send us a bottle that we can replace, please let me know.

I've attached an image from the previous bottle in case that can answer any questions.
[HF.png]

Thanks.

--
Darick Baker, PhD
Research Engineer
Washington Nanofabrication Facility
University of Washington
Fluke Hall 115, Box 352143
(206) 221-8265
Pronouns: he/him
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From dwolff at nelhydrogen.com  Fri Oct 15 17:34:37 2021
From: dwolff at nelhydrogen.com (Wolff, David)
Date: Fri, 15 Oct 2021 21:34:37 +0000
Subject: [labnetwork] anhydrous HF vapor suppliers
In-Reply-To: <DM5PR03MB30988E8F2EE48A1752A2078186B99@DM5PR03MB3098.namprd03.prod.outlook.com>
References: <CAJTeEcpDpyoCNe41jLzm71pvyfPCMEE0pe5cvWKGDcOPa+O1JA@mail.gmail.com>
 <DM5PR03MB30988E8F2EE48A1752A2078186B99@DM5PR03MB3098.namprd03.prod.outlook.com>
Message-ID: <BL0PR08MB459348C8B97975DA77A3F0B5C6B99@BL0PR08MB4593.namprd08.prod.outlook.com>

As far as Julia?s statement that ?Linde also been bought by another gas vendor or has merged and has a name change?, she may be referring to the fact that certain parts of the Linde organization were purchased by the Messer Group of Germany, which now (again) has a strong presence in the US.  I am pretty sure that the parts that were bought were primarily the bulk gas parts.  I?m willing to bet that the same Linde people, phone numbers, and e-mails that you used in the past for specialty gas cylinders will still work.

Dave Wolff
Region Sales Manager

[cid:image001.png at 01D7C1EA.EBC986C0]

Nel Hydrogen
10 Technology Drive,  Wallingford, CT 06492 USA
Office:   M  +1 860-604-3282
Fax: +1 203-949-8016
dwolff at nelhydrogen.com
www.nelhydrogen.com


From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Aebersold,Julia W.
Sent: Friday, October 15, 2021 11:48
To: Darick Baker <darick at uw.edu>; Fab Network <labnetwork at mtl.mit.edu>
Subject: Re: [labnetwork] anhydrous HF vapor suppliers

CAUTION: Our automatic validation of the sender of this mail failed. Pay extra attention to attachments as well as links!!
That is the same supplier we use and I am not aware of other vendors. The lead time is always an issue with the gas, so we keep an extra bottle on hand.

I believe Linde also been bought by another gas vendor or has merged and has a name change.

Cheers!

Julia Aebersold, Ph.D.
Manager, Micro/Nano Technology Center
University of Louisville
Shumaker Research Building, Room 233
2210 South Brook Street
Louisville, KY  40292
(502) 852-1572

http://louisville.edu/micronano/

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Darick Baker
Sent: Thursday, October 14, 2021 6:08 PM
To: Fab Network <labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>>
Subject: [labnetwork] anhydrous HF vapor suppliers

CAUTION: This email originated from outside of our organization. Do not click links, open attachments, or respond unless you recognize the sender's email address and know the contents are safe.
Hello,

We have run out of HF in our SPTS uEtch vapor HF etching tool. We are now rushing to get a new cylinder because we have a couple lab users who have a critical need. We have a bottle on order, but the lead time is longer than we or the users are comfortable with.

If anybody has suggestions for alternate sources or knows of someone who may be willing to send us a bottle that we can replace, please let me know.

I've attached an image from the previous bottle in case that can answer any questions.
[cid:image004.jpg at 01D7C1EA.50701630]

Thanks.

--
Darick Baker, PhD
Research Engineer
Washington Nanofabrication Facility
University of Washington
Fluke Hall 115, Box 352143
(206) 221-8265
Pronouns: he/him
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From gloria.qiu at sydney.edu.au  Tue Oct 19 00:15:28 2021
From: gloria.qiu at sydney.edu.au (Gloria Qiu)
Date: Tue, 19 Oct 2021 04:15:28 +0000
Subject: [labnetwork] Sputtering Bi2Sr2CaCu2O8 (Bi-2212)
Message-ID: <SYCPR01MB50370722F78E35BCEA4611FFDBBD9@SYCPR01MB5037.ausprd01.prod.outlook.com>

Dear everyone,

I am wondering if anyone has experience of sputtering Bi2Sr2CaCu2O8 (Bi-2212). We have a 5-gun AJA magnetron sputtering system currently hosts ITO and NbTi(N) processes.
My main concern of introducing Bi-2212 is the potential contamination that it brings to the current processes and the CoOx compound might be difficult to clean (?).

Any comment is appreciated!

Cheers!

Gloria

Wenlan (Gloria) Qiu
Senior Process Engineer | Research & Prototype Foundry
Core Research Facilities | Research Portfolio

THE UNIVERSITY OF SYDNEY
Level 4, Sydney Nanoscience Hub A31 | The University of Sydney | NSW | 2006
T +61 02 8627 9756
E gloria.qiu at sydney.edu.au<mailto:gloria.qiu at sydney.edu.au>  | W Research and Prototype Foundry<https://sydney.edu.au/research/facilities/research-and-prototype-foundry.html>

Part of the NSW Node<https://www.anff-nsw.org/> of the Australian National Fabrication Facility<https://www.anff.org.au/>.

CRICOS 00026A
This email plus any attachments to it are confidential.  Any unauthorised use is strictly prohibited.  If you receive this email in error, please delete it and any attachments.

Please think of our environment and only print this e-mail if necessary.

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From sandra.malhotra at tamu.edu  Tue Oct 19 16:49:59 2021
From: sandra.malhotra at tamu.edu (Malhotra, Sandra Guy)
Date: Tue, 19 Oct 2021 20:49:59 +0000
Subject: [labnetwork] Question about Ocean Optics Nanocalc-DUV
Message-ID: <SA2PR11MB487364079BE5760D22ED10F888BD9@SA2PR11MB4873.namprd11.prod.outlook.com>

Howdy All,
We recently encountered a situation where the halogen bulb in our Ocean Optics Nanocalc-DUV spectrometer stopped functioning and only the deuterium bulb was working, but this was not apparent, so we continued making measurements and generated some incorrect refractive index data. For those that have this type of instrument: is there a standard sample that we could run or tool parameters that we could check to ensure the health of the tool prior to making measurements?

Thanks for any advice you can provide!

Sandra G. Malhotra, Ph.D.  |  Technical Lab Manager
AggieFab Nanofabrication Facility
Department of Electrical & Computer Engineering, College of Engineering | Texas A&M University
3253 TAMU | College Station, TX 77843
ph: 979.845.3199  |  s<mailto:hprichard at tamu.edu>andra.malhotra at tamu.edu<mailto:andra.malhotra at tamu.edu>
- - - - - - - - - - - - - - - - - - - - - - - -
TEXAS A&M UNIVERSITY | FEARLESS on Every Front

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From tintolinni at gmail.com  Wed Oct 20 01:06:23 2021
From: tintolinni at gmail.com (Lomo Tintolinni)
Date: Wed, 20 Oct 2021 13:06:23 +0800
Subject: [labnetwork] Fuji SC450 resist
Message-ID: <CAKoJ3_V=cq2dL15bioHJTfxSZbHYSNY6RNbK8SqSQJEJpFZ7Mg@mail.gmail.com>

Hi All,

For a trial test, I?m looking into Fuji SC450 negative resist, does anyone
know if this is still available on the market? and I also try to get a feel
about the price per gallon or liter, any input are much appreciated : )

Thanks a lot!


Mark Tintolinni
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From shimonel at savion.huji.ac.il  Wed Oct 20 05:08:36 2021
From: shimonel at savion.huji.ac.il (Shimon Eliav)
Date: Wed, 20 Oct 2021 09:08:36 +0000
Subject: [labnetwork] Question about Ocean Optics Nanocalc-DUV
In-Reply-To: <SA2PR11MB487364079BE5760D22ED10F888BD9@SA2PR11MB4873.namprd11.prod.outlook.com>
References: <SA2PR11MB487364079BE5760D22ED10F888BD9@SA2PR11MB4873.namprd11.prod.outlook.com>
Message-ID: <VI1PR1001MB1470FB15B3F2E1FC323877E7D6BE9@VI1PR1001MB1470.EURPRD10.PROD.OUTLOOK.COM>

Hi Sandra,

We have the same equipment here at Hebrew University. It came without any reference, but we have a piece of Si with a known thickness of SiO2 and this serve us as reference prior any measurement. Very simple and useful.

Regards,

Shimon
The Hebrew University of Jerusalem
The Unit for Nano Fabrication
ISRAEL

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Malhotra, Sandra Guy
Sent: Tuesday, 19 October 2021 23:50
To: Fab Network <labnetwork at mtl.mit.edu>
Subject: [labnetwork] Question about Ocean Optics Nanocalc-DUV

Howdy All,
We recently encountered a situation where the halogen bulb in our Ocean Optics Nanocalc-DUV spectrometer stopped functioning and only the deuterium bulb was working, but this was not apparent, so we continued making measurements and generated some incorrect refractive index data. For those that have this type of instrument: is there a standard sample that we could run or tool parameters that we could check to ensure the health of the tool prior to making measurements?

Thanks for any advice you can provide!

Sandra G. Malhotra, Ph.D.  |  Technical Lab Manager
AggieFab Nanofabrication Facility
Department of Electrical & Computer Engineering, College of Engineering | Texas A&M University
3253 TAMU | College Station, TX 77843
ph: 979.845.3199  |  s<mailto:hprichard at tamu.edu>andra.malhotra at tamu.edu<mailto:andra.malhotra at tamu.edu>
- - - - - - - - - - - - - - - - - - - - - - - -
TEXAS A&M UNIVERSITY | FEARLESS on Every Front

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From Thomas_Ferraguto at uml.edu  Wed Oct 20 08:37:59 2021
From: Thomas_Ferraguto at uml.edu (Ferraguto, Thomas S)
Date: Wed, 20 Oct 2021 12:37:59 +0000
Subject: [labnetwork] grounding of Nalgene Carboys for solvents
Message-ID: <BYAPR02MB599092F0663A27EFC66FF480ECBE9@BYAPR02MB5990.namprd02.prod.outlook.com>

A vendor recommended using a grounding wire inside a solvent 2.5 gallon car boy for solvent collection (closed).

I?ve never seen that before, we currently collect in 5 gallon solvent resistant plastic?

A  ground wire would have to be reinserted every change. I just don?t know if the change is necessary.

Any thoughts on using an inserted ground wire in a solvent carboy. I haven?t been able to find anything in the regs, yet.

We do bond and ground for satellite solvent steel drums.

Tom Ferraguto
UMass Lowell

Sent from Mail<https://go.microsoft.com/fwlink/?LinkId=550986> for Windows

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From julia.aebersold at louisville.edu  Wed Oct 20 10:42:52 2021
From: julia.aebersold at louisville.edu (Aebersold,Julia W.)
Date: Wed, 20 Oct 2021 14:42:52 +0000
Subject: [labnetwork] Question about Ocean Optics Nanocalc-DUV
In-Reply-To: <VI1PR1001MB1470FB15B3F2E1FC323877E7D6BE9@VI1PR1001MB1470.EURPRD10.PROD.OUTLOOK.COM>
References: <SA2PR11MB487364079BE5760D22ED10F888BD9@SA2PR11MB4873.namprd11.prod.outlook.com>
 <VI1PR1001MB1470FB15B3F2E1FC323877E7D6BE9@VI1PR1001MB1470.EURPRD10.PROD.OUTLOOK.COM>
Message-ID: <DM5PR03MB3098B55EC3CF3034CEC959DB86BE9@DM5PR03MB3098.namprd03.prod.outlook.com>

Filmetrics also sells standards that you can use to calibrate your instrument.

Cheers!

Julia Aebersold, Ph.D.
Manager, Micro/Nano Technology Center
University of Louisville
Shumaker Research Building, Room 233
2210 South Brook Street
Louisville, KY  40292
(502) 852-1572

http://louisville.edu/micronano/

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Shimon Eliav
Sent: Wednesday, October 20, 2021 5:09 AM
To: Malhotra, Sandra Guy <sandra.malhotra at tamu.edu>
Cc: Fab Network <labnetwork at mtl.mit.edu>
Subject: Re: [labnetwork] Question about Ocean Optics Nanocalc-DUV

CAUTION: This email originated from outside of our organization. Do not click links, open attachments, or respond unless you recognize the sender's email address and know the contents are safe.
Hi Sandra,

We have the same equipment here at Hebrew University. It came without any reference, but we have a piece of Si with a known thickness of SiO2 and this serve us as reference prior any measurement. Very simple and useful.

Regards,

Shimon
The Hebrew University of Jerusalem
The Unit for Nano Fabrication
ISRAEL

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Malhotra, Sandra Guy
Sent: Tuesday, 19 October 2021 23:50
To: Fab Network <labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>>
Subject: [labnetwork] Question about Ocean Optics Nanocalc-DUV

Howdy All,
We recently encountered a situation where the halogen bulb in our Ocean Optics Nanocalc-DUV spectrometer stopped functioning and only the deuterium bulb was working, but this was not apparent, so we continued making measurements and generated some incorrect refractive index data. For those that have this type of instrument: is there a standard sample that we could run or tool parameters that we could check to ensure the health of the tool prior to making measurements?

Thanks for any advice you can provide!

Sandra G. Malhotra, Ph.D.  |  Technical Lab Manager
AggieFab Nanofabrication Facility
Department of Electrical & Computer Engineering, College of Engineering | Texas A&M University
3253 TAMU | College Station, TX 77843
ph: 979.845.3199  |  s<mailto:hprichard at tamu.edu>andra.malhotra at tamu.edu<mailto:andra.malhotra at tamu.edu>
- - - - - - - - - - - - - - - - - - - - - - - -
TEXAS A&M UNIVERSITY | FEARLESS on Every Front

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From rlschoeppner at ucsb.edu  Wed Oct 20 11:51:21 2021
From: rlschoeppner at ucsb.edu (Rachel Schoeppner)
Date: Wed, 20 Oct 2021 08:51:21 -0700
Subject: [labnetwork] Johnson Matthey H2 Purifier
Message-ID: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>

?Good Morning, 


We have a Johnson Matthey HP-25 hydrogen purifier that we suspect is not functioning properly. In its idle state it is kept under low UHP N2 flow, and we think that some of this is getting through the purifier into the lines of our CVD. At the start of deposition when we start H2 flow and ignite the initial plasma we see an unexpected peak in nitrogen (verified both in the emission spectrum of the plasma as well as nitrogen that is incorporated in the epitaxial film as measured with SIMS). When we flow the hydrogen gas through the growth chamber for ~20 min before deposition, no nitrogen peak is observed, suggesting that it is coming in as an initial ?plug? through the purifier at the very beginning that can be flushed through. There is also a low amount of background nitrogen throughout the deposition (this could be an impurity in the methane, but I am not sure how likely that is). 

We have leak checked the line running from the purifier to the CVD chamber and cannot detect any leaks that might be causing the initial nitrogen spike.

We are wondering if anyone has experience with these purifiers or ideas on how to diagnose their proper functionality. If it is letting unwanted species through, then what would be our options for fixing or replacing it?


Thank you!


Rachel

?                                                    

Rachel Schoeppner, Ph.D

Nanostructure Cleanroom Facility Manager
California NanoSystems Institute (CNSI)
University of California, Santa Barbara
rlschoeppner at ucsb.edu
rachel at cnsi.ucsb.edu
(805)893-2296











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From Travis at evolvediamonds.com  Wed Oct 20 12:24:44 2021
From: Travis at evolvediamonds.com (Travis Wade)
Date: Wed, 20 Oct 2021 12:24:44 -0400
Subject: [labnetwork] Johnson Matthey H2 Purifier
In-Reply-To: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
References: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
Message-ID: <CA+FtJkH6ZsTU=L8d7ofs6WW=A_K_MhEvWqx0qyK4=B8e-FyXCQ@mail.gmail.com>

Hi Rachel,

These purifiers are conducive to easy troubleshooting.  The Pd purifier is
designed to only pass hydrogen when at high temperature, so to check for
leakage, allow the purifier to cool to ambient (under inert gas) and try to
flow gas (any gas) through it.  Any flow at room temperature indicates a
cracked membrane and a replacement purifier cell will be required.  I
suspect this will reveal your issue.

If no flow is possible when the membrane is cool, the entire chamber should
be leakchecked, with an emphasis on process gas lines and valves.

Methane is a likely source of low nitrogen concentrations.  Methane
purifiers exist, and thankfully, are less expensive than hydrogen
purifiers.  However, their failures are not so simple to diagnose as
your HP-25.

For extremely low nitrogen concentrations in your process chamber, you may
find that it is always desirable to flow hydrogen for a while before
igniting the plasma.

Feel free to reach out to me directly if you have further questions.

Best regards,

Travis
----------------------------------------------
Travis Wade, Ph.D.
Evolve Diamonds LLC
Ph. (978) 434-2283
www.EvolveDiamonds.com

On Wed, Oct 20, 2021 at 12:12 PM Rachel Schoeppner <rlschoeppner at ucsb.edu>
wrote:

> ?Good Morning,
>
>
> We have a Johnson Matthey HP-25 hydrogen purifier that we suspect is not
> functioning properly. In its idle state it is kept under low UHP N2 flow,
> and we think that some of this is getting through the purifier into the
> lines of our CVD. At the start of deposition when we start H2 flow and
> ignite the initial plasma we see an unexpected peak in nitrogen (verified
> both in the emission spectrum of the plasma as well as nitrogen that is
> incorporated in the epitaxial film as measured with SIMS). When we flow the
> hydrogen gas through the growth chamber for ~20 min before deposition, no
> nitrogen peak is observed, suggesting that it is coming in as an initial
> ?plug? through the purifier at the very beginning that can be flushed
> through. There is also a low amount of background nitrogen throughout the
> deposition (this could be an impurity in the methane, but I am not sure how
> likely that is).
>
> We have leak checked the line running from the purifier to the CVD chamber
> and cannot detect any leaks that might be causing the initial nitrogen
> spike.
>
> We are wondering if anyone has experience with these purifiers or ideas on
> how to diagnose their proper functionality. If it is letting unwanted
> species through, then what would be our options for fixing or replacing it?
>
>
> Thank you!
>
>
> Rachel
>
> ?
>
> *Rachel Schoeppner, Ph.D*
>
> Nanostructure Cleanroom Facility Manager
> California NanoSystems Institute (CNSI)
> University of California, Santa Barbara
> rlschoeppner at ucsb.edu
> rachel at cnsi.ucsb.edu
> (805)893-2296
>
>
>
>
>
>
>
>
>
>
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
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From bdlittl2 at ncsu.edu  Wed Oct 20 12:33:18 2021
From: bdlittl2 at ncsu.edu (Brian Little)
Date: Wed, 20 Oct 2021 12:33:18 -0400
Subject: [labnetwork] Johnson Matthey H2 Purifier
In-Reply-To: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
References: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
Message-ID: <CAMVh9-zJWn+pYZEerSxBeC+imu6emsSTXMA=zY4RipHhJ7XwCQ@mail.gmail.com>

Hi Rachel,
Palladium cell purifiers work great but are prone to failure due to the
brittle nature of the Pd membrane.
If they are not properly purged before the cell cools down, such as in a
loss of power, the membrane will crack due to Hydrogen getting trapped
inside.
A quick function test can be done by switching the upstream H2 supply over
to full Nitrogen (or other inert gas) while hot. The purified H2 existing
in the pressurized line will eventually back-diffuse through the hot cell
and get carried away by the purge bleed flow. Eventually, it will pull a
vacuum on the H2 downstream line (assuming it is leak right and there are
no downstream valves open.
If it doesn?t pull a vacuum, the membrane is dead.
Hope this helps!
Brian


On Wed, Oct 20, 2021 at 12:09 PM Rachel Schoeppner <rlschoeppner at ucsb.edu>
wrote:

> ?Good Morning,
>
>
> We have a Johnson Matthey HP-25 hydrogen purifier that we suspect is not
> functioning properly. In its idle state it is kept under low UHP N2 flow,
> and we think that some of this is getting through the purifier into the
> lines of our CVD. At the start of deposition when we start H2 flow and
> ignite the initial plasma we see an unexpected peak in nitrogen (verified
> both in the emission spectrum of the plasma as well as nitrogen that is
> incorporated in the epitaxial film as measured with SIMS). When we flow the
> hydrogen gas through the growth chamber for ~20 min before deposition, no
> nitrogen peak is observed, suggesting that it is coming in as an initial
> ?plug? through the purifier at the very beginning that can be flushed
> through. There is also a low amount of background nitrogen throughout the
> deposition (this could be an impurity in the methane, but I am not sure how
> likely that is).
>
> We have leak checked the line running from the purifier to the CVD chamber
> and cannot detect any leaks that might be causing the initial nitrogen
> spike.
>
> We are wondering if anyone has experience with these purifiers or ideas on
> how to diagnose their proper functionality. If it is letting unwanted
> species through, then what would be our options for fixing or replacing it?
>
>
> Thank you!
>
>
> Rachel
>
> ?
>
> *Rachel Schoeppner, Ph.D*
>
> Nanostructure Cleanroom Facility Manager
> California NanoSystems Institute (CNSI)
> University of California, Santa Barbara
> rlschoeppner at ucsb.edu
> rachel at cnsi.ucsb.edu
> (805)893-2296
>
>
>
>
>
>
>
>
>
>
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
-- 

______________
Brian Little, Ph.D.
Senior Research Scholar
Electrical and Computer Engineering Department
Campus Box 7911
2410 Campus Shore Drive, Room 322F
Monteith Engineering Research Center (MRC)
Raleigh, NC 27606
Email: bdlittl2 at ncsu.edu
Mobile: 919-272-4984
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From deonc69 at illinois.edu  Wed Oct 20 12:43:06 2021
From: deonc69 at illinois.edu (Collins, Deon)
Date: Wed, 20 Oct 2021 16:43:06 +0000
Subject: [labnetwork] Johnson Matthey H2 Purifier
In-Reply-To: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
References: <9818B80D-8931-42A1-A834-89296A70D9E2@ucsb.edu>
Message-ID: <DM6PR11MB316229FB30BA4A4FEA18DA30D7BE9@DM6PR11MB3162.namprd11.prod.outlook.com>

If this was improperly shut down(not allowed to cool off and turned off) the palladium plates can crack and cause gasses to leak through the material.

Deon D. Collins

FACILITY MANAGER
Holonyak Lab
University of Illinois at Urbana-Champaign
208 N Wright St Rm. 248 | 2250
Urbana, IL 61801
217-300-7531 | deonc69 at illinois.edu<mailto:deonc69 at illinois.edu>


[https://webtools.illinois.edu/webservices/js/ds/signature_logo.png]<http://illinois.edu/>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

I?m so tired of being tired, Sure as night will follow day, Most things I worry about never happen anyway.

                                                                                                                                                                             Tom Petty

From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Rachel Schoeppner
Sent: Wednesday, October 20, 2021 10:51 AM
To: labnetwork at mtl.mit.edu
Cc: Lillian Hughes <lbhughes at ucsb.edu>
Subject: [labnetwork] Johnson Matthey H2 Purifier

?Good Morning,


We have a Johnson Matthey HP-25 hydrogen purifier that we suspect is not functioning properly. In its idle state it is kept under low UHP N2 flow, and we think that some of this is getting through the purifier into the lines of our CVD. At the start of deposition when we start H2 flow and ignite the initial plasma we see an unexpected peak in nitrogen (verified both in the emission spectrum of the plasma as well as nitrogen that is incorporated in the epitaxial film as measured with SIMS). When we flow the hydrogen gas through the growth chamber for ~20 min before deposition, no nitrogen peak is observed, suggesting that it is coming in as an initial ?plug? through the purifier at the very beginning that can be flushed through. There is also a low amount of background nitrogen throughout the deposition (this could be an impurity in the methane, but I am not sure how likely that is).

We have leak checked the line running from the purifier to the CVD chamber and cannot detect any leaks that might be causing the initial nitrogen spike.

We are wondering if anyone has experience with these purifiers or ideas on how to diagnose their proper functionality. If it is letting unwanted species through, then what would be our options for fixing or replacing it?


Thank you!


Rachel

?

Rachel Schoeppner, Ph.D

Nanostructure Cleanroom Facility Manager
California NanoSystems Institute (CNSI)
University of California, Santa Barbara
rlschoeppner at ucsb.edu<mailto:rlschoeppner at ucsb.edu>
rachel at cnsi.ucsb.edu<mailto:rachel at cnsi.ucsb.edu>
(805)893-2296










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From saba.sadeghi at uwaterloo.ca  Wed Oct 20 12:51:47 2021
From: saba.sadeghi at uwaterloo.ca (Saba Sadeghi)
Date: Wed, 20 Oct 2021 16:51:47 +0000
Subject: [labnetwork] MBE growth of Nd and Pr
Message-ID: <5a919f8ece2e4a549a8919bdbaa16ba0@uwaterloo.ca>

Dear colleagues,

I was wondering if anyone has experience with MBE growth of Neodymium and Praseodymium; I'd like to ask a few questions about the crucible's type (for growth in partial oxygen background), idle temperature for their effusion cells and safe handling of the materials.

As always I really appreciate your input.

Best regard,
Saba
--
Saba Sadeghi, PhD
Quantum Devices Fabrication Scientist
Institute for Quantum Computing, University of Waterloo
Phone: 519-888-4567 ext. 39825
Email: saba.sadeghi at uwaterloo.ca

From na2661 at columbia.edu  Wed Oct 20 13:11:24 2021
From: na2661 at columbia.edu (Nava Ariel-Sternberg)
Date: Wed, 20 Oct 2021 13:11:24 -0400
Subject: [labnetwork] Recommended bonder vendors
Message-ID: <01f001d7c5d5$83927b40$8ab771c0$@columbia.edu>

Hi all, 

We're looking into replacing our wedge bonders with something automatic or
semi-automatic with motorized movement control. 

Do you have any systems/vendors to recommend? 

Thanks,

Nava

 

 

Nava Ariel-Sternberg, Ph.D.

Director of CNI Shared Labs

Columbia University

CEPSR/MC 8903 

530 west 120th st. NY

NY 10027

Office: 212-8549927

Cell: 201-5627600

 

 

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From s.siontas at lelantostech.com  Fri Oct 22 11:24:40 2021
From: s.siontas at lelantostech.com (Stylianos Siontas)
Date: Fri, 22 Oct 2021 11:24:40 -0400
Subject: [labnetwork] Columbia University Startup seeking Postdoc - NSF
 support
Message-ID: <CAPcjk-y2duaj_+qFjfgixZ77Z07WtCs7LFHtE_odcbLT98H87Q@mail.gmail.com>

Dear all,

Lelantos is a startup based out of Columbia University, developing gas
sensors targeted to IoT applications in threat detection, air quality
monitoring and medical diagnostics markets. We are seeking to hire a
postdoctoral researcher to join our team in New York City operating out of
Columbia University, which will be supported by the NSF I-PERF program.

Please see attached job description and feel free to share with fitting
candidates.

-- 

Stylianos Siontas | PhD

Co-founder & CEO | Lelantos

s.siontas at lelantostech.com

www.lelantostech.com
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From sandrine at umich.edu  Fri Oct 22 15:52:00 2021
From: sandrine at umich.edu (Sandrine Martin)
Date: Fri, 22 Oct 2021 15:52:00 -0400
Subject: [labnetwork] Open position at the University of Michigan Lurie
 Nanofabrication Facility
Message-ID: <CAMJO2NDNsZ8m_BKa7wZ3uaQCEMWv6dwqKZkEu_sWpsWMR+Wojw@mail.gmail.com>

Dear all,

Come join us in Michigan! We have an opening for a *User Liaison and Domain
Expert *staff position. See below for a summary of the position and go to
https://careers.umich.edu/job_detail/205730/lnf_user_liaison_and_domain_expert
for all details and application link.


*Key Responsibilities*You will report to the LNF User Program Manager and
will act as an advocate for the LNF user community. Specific duties and
responsibilities of the position are listed below:

   - Use your understanding of the technical and scientific details of
   diverse research projects to act as the leading technical interface between
   the LNF and prospective research groups.
   - Support the needs of prospective and existing LNF users especially
   with projects related to materials, biosciences, physics and/or chemistry.
   Assist them in using available tools and developing processes when needed.
   - Be a technical spokesperson for the LNF and help promote the
   laboratory.


*Required Qualifications*

   - A Ph.D. in Material Sciences, Physics, Chemistry, Biosciences or
   related fields, with 3+ years of experience.
   - Knowledge of, and hands-on experience with, nano and micro fabrication
   technologies, such as thin film deposition and growth, optical and e-beam
   lithography, soft lithography, wet and dry etching, and associated
   metrology and characterization.
   - Experience in diverse research environments.
   - Demonstrated ability to effectively communicate in technical settings.

*Who we are*
The Lurie Nanofabrication Facility (LNF) at the University of Michigan is a
24/7 shared user facility that provides advanced micro- and
nano-fabrication equipment and expertise to research groups from
government, industry and universities, currently serving over 450 users
working on a variety of applications in engineering, physical and life
sciences.
The LNF consists of a 13,500 square foot class 10/100/1000/10000 cleanroom,
including a BiosSafety Level 2 laboratory space. LNF supports and enables
cutting-edge research, from semiconductor materials and devices, integrated
microsystems, electronic circuits, solid-state lighting, energy,
biotechnology, medical devices and unconventional materials and processing
technologies.

Feel free to forward this information to others!
Regards
Sandrine
-- 

Sandrine Martin, Ph.D. (she/her/hers)

University of Michigan

LNF Managing Director

1246D EECS, 1301 Beal Ave

Ann Arbor, MI 48109

Cell 734-277-2365

Fax 734-647-1781

www.LNF.umich.edu <http://www.lnf.umich.edu/>

@LurieNanofab
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From eva.rose at gno.de  Fri Oct 22 17:19:54 2021
From: eva.rose at gno.de (Eva Rose)
Date: Fri, 22 Oct 2021 23:19:54 +0200
Subject: [labnetwork] Defects after resist spinning
Message-ID: <f503b57a-bd9c-9333-0d13-06a4e355f5b5@gno.de>

Dear all,


did anybody? ever see any defects like this on the resist surface after 
resist spinning. The diameter varies from about 20um to over 150um.






Any idea what the reason could be?


Best regards,

Eva

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From ahryciw at ualberta.ca  Fri Oct 22 22:22:48 2021
From: ahryciw at ualberta.ca (Aaron Hryciw)
Date: Fri, 22 Oct 2021 20:22:48 -0600
Subject: [labnetwork] Defects after resist spinning
In-Reply-To: <f503b57a-bd9c-9333-0d13-06a4e355f5b5@gno.de>
References: <f503b57a-bd9c-9333-0d13-06a4e355f5b5@gno.de>
Message-ID: <CAPt+QB9PEAkjzg6e+-S19bWJd8KrrmEkCR_YqmKdK2r2MOziLA@mail.gmail.com>

Hi Eva,

Out of curiosity, did you previously inspect the wafer in an optical
microscope using a higher-mag objective than the one used to capture the
images?  Given how circular these defects look, and the concentric pattern,
my guess is that this is a heating effect, the result of staying too long
in one position with a high light intensity.

Cheers,

 ? Aaron



Aaron Hryciw, PhD, PEng

Fabrication Group Manager

University of Alberta - nanoFAB

W1-060 ECERF Building

9107 - 116 Street

Edmonton, Alberta

Canada T6G 2V4 Ph: 780-940-7938
www.nanofab.ualberta.ca



On Fri, Oct 22, 2021 at 5:55 PM Eva Rose <eva.rose at gno.de> wrote:

> Dear all,
>
>
> did anybody  ever see any defects like this on the resist surface after
> resist spinning. The diameter varies from about 20um to over 150um.
>
>
>
>
>
>
> Any idea what the reason could be?
>
>
> Best regards,
>
> Eva
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
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From lino.eugene at uwaterloo.ca  Sat Oct 23 09:27:45 2021
From: lino.eugene at uwaterloo.ca (Lino Eugene)
Date: Sat, 23 Oct 2021 13:27:45 +0000
Subject: [labnetwork] Defects after resist spinning
Message-ID: <50ecfa0c-8cf7-4704-83da-ccdc0c640434@email.android.com>

Hi Eva,

It looks like that there is dendritic cristallisation in your defects.

Was the subtrate immersed in RCA 1 or BOE or any solution involving a salt? If so, my first thought is that the substrate was not rinsed properly prior spin coating.

Best,
Lino Eugene

On Oct. 23, 2021 07:46, Aaron Hryciw <ahryciw at ualberta.ca> wrote:
Hi Eva,

Out of curiosity, did you previously inspect the wafer in an optical microscope using a higher-mag objective than the one used to capture the images?  Given how circular these defects look, and the concentric pattern, my guess is that this is a heating effect, the result of staying too long in one position with a high light intensity.

Cheers,

 ? Aaron



Aaron Hryciw, PhD, PEng

Fabrication Group Manager

University of Alberta - nanoFAB

W1-060 ECERF Building

9107 - 116 Street

Edmonton, Alberta

Canada T6G 2V4 Ph: 780-940-7938

www.nanofab.ualberta.ca<http://www.nanofab.ualberta.ca/>



On Fri, Oct 22, 2021 at 5:55 PM Eva Rose <eva.rose at gno.de<mailto:eva.rose at gno.de>> wrote:
Dear all,


did anybody  ever see any defects like this on the resist surface after resist spinning. The diameter varies from about 20um to over 150um.

[cid:17caaeab150a3a20b871]

[cid:17caaeab15074e3f89d2]


Any idea what the reason could be?


Best regards,

Eva

_______________________________________________
labnetwork mailing list
labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork

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From demis at ucsb.edu  Sat Oct 23 11:20:36 2021
From: demis at ucsb.edu (Demis D. John)
Date: Sat, 23 Oct 2021 08:20:36 -0700
Subject: [labnetwork] Defects after resist spinning
In-Reply-To: <f503b57a-bd9c-9333-0d13-06a4e355f5b5@gno.de>
References: <f503b57a-bd9c-9333-0d13-06a4e355f5b5@gno.de>
Message-ID: <CAKrtPjohy5Swp1GwKaFvViabmQk9CQULMirJ4s5tJN1FMS_M8w@mail.gmail.com>

We have seen something like this - but we never investigated further where
they came from, because yield was good enough even with these relatively
sparse spots.
Some looked like yours, others had even further delamination as pictured
below.

This was PR spun onto Gold, so I assumed that we had PR delaminating from
the Au or Au delaminating from the substrate. I believe we only noticed
them after develop, so at the time I hypothesized that the squiggly lines
are something like developer creeping under the resist.
However the jagged lines are indicative of thin-film stress, so it could
instead be the Au (I believe it was TiAu) delaminating from the substrate.
I imagine we had some relatively large, sparse particles on the wafer
before our TiAu EBeam deposition, which caused slight shadowing around
them.  Then either the PR solvent, or Stress from baking, or liquid
immersion developing caused delamination at those defects. Those are my
guesses.

I have this printed in my office - mistakes sometimes make excellent
pictures!
? Demis




On Fri, Oct 22, 2021 at 16:54 Eva Rose <eva.rose at gno.de> wrote:

> Dear all,
>
>
> did anybody  ever see any defects like this on the resist surface after
> resist spinning. The diameter varies from about 20um to over 150um.
>
>
>
>
>
>
> Any idea what the reason could be?
>
>
> Best regards,
>
> Eva
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
>
-- 
-- Demis

----------------------------------------
*   Process Scientist Manager*
 *UCSB Nanofabrication Facility* <https://www.nanotech.ucsb.edu/>
         Demis' Contact Info
<https://wiki.nanotech.ucsb.edu/wiki/Demis_D._John>
----------------------------------------
*Reminder*: The NanoFab has a publications policy
<https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab>
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From jmaduzi2 at illinois.edu  Tue Oct 26 16:48:35 2021
From: jmaduzi2 at illinois.edu (Maduzia, Joseph Walter)
Date: Tue, 26 Oct 2021 20:48:35 +0000
Subject: [labnetwork] Mask of Al in HF
Message-ID: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/

[cid:image001.png at 01D7CA80.EEDBB600]<http://illinois.edu/>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From fplu at uchicago.edu  Tue Oct 26 22:15:05 2021
From: fplu at uchicago.edu (Felix Lu)
Date: Wed, 27 Oct 2021 02:15:05 +0000
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <CH2PR11MB42145A5B0BDF4C3E7EE470C7B2859@CH2PR11MB4214.namprd11.prod.outlook.com>

Hi Joe ?

An HF etch with Al is tough. We had a similar problem about 10 years ago. From what I can recall, we changed the order of operations, evaporating Al through a shadow mask after the HF etch. This of course required a special jig. I?m happy to share more details if this approach is of interest to you.

Best,
Felix
___________________________________________________
Felix P. Lu, Ph.D.
Director of Corporate Engagement

Pritzker School of Molecular Engineering
The University of Chicago
Eckhardt Research Center
5640 S. Ellis Ave., Room ACC104
Chicago, IL 60637

773.834.5063 office

fplu at uchicago.edu<mailto:fplu at uchicago.edu> | pme.uchicago.edu<http://pme.uchicago.edu/>

From: labnetwork <labnetwork-bounces at mtl.mit.edu> on behalf of Maduzia, Joseph Walter <jmaduzi2 at illinois.edu>
Date: Tuesday, October 26, 2021 at 8:07 PM
To: labnetwork at mtl.mit.edu <labnetwork at mtl.mit.edu>
Subject: [labnetwork] Mask of Al in HF
Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep?d first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it?s not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/<https://urldefense.com/v3/__https:/cleanroom.mechse.illinois.edu/__;!!BpyFHLRN4TMTrA!oFCVohVjcsYiYykvtYg6u7SZgKTbwTgxNvB0CPkQloOWlykw6lh26qLciNrEM7PY$>

[cid:image001.png at 01D7CAAE.8B6FF710]<https://urldefense.com/v3/__http:/illinois.edu/__;!!BpyFHLRN4TMTrA!oFCVohVjcsYiYykvtYg6u7SZgKTbwTgxNvB0CPkQloOWlykw6lh26qLciGAQ-lC5$>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From alireza.poly at gmail.com  Tue Oct 26 23:31:40 2021
From: alireza.poly at gmail.com (Al Poly)
Date: Tue, 26 Oct 2021 22:31:40 -0500
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <25172d29-934d-89eb-395e-0867bd746629@gmail.com>

Hi Joe,

Adding Glycerin to an HF solution will reduce the Al etching or even 
inhibit it. I learned about this many years ago and do not have the 
references handy.? But by a quick search I found this:

https://gnusha.org/~nmz787/mems/unorganized/wet_etch.pdf

Good luck,

Alireza Mesgar

Equipment Engineer
Texas Instruments


On 10/26/21 15:48, Maduzia, Joseph Walter wrote:
>
> Hello,
>
> Does anyone have any suggestions for mask materials to protect Al in 
> HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE 
> etched to glass, HF etch to undercut and free devices, but have Al 
> contact pads and AL is dep?d first. Typically we use PR as pattern 
> mask, but the Al is etching behind the PR. In this case the Al is 
> deposited first, so although order of operations change might help, 
> it?s not a good option atm.
>
>
> Thank you for any suggestions you might have!
>
> *JOE MADUZIA*
> /MNMS Laboratory Specialist/
>
> The Grainger College of Engineering
> Mechanical Science and Engineering
>
> 2239 Sidney Lu Mechanical Engineering Bldg
> 1206 W. Green
> Urbana, IL 61801
> 217.244.6302 | jmaduzi2 at illinois.edu <mailto:jmaduzi2 at illinois.edu>
>
> https://cleanroom.mechse.illinois.edu/ 
> <https://cleanroom.mechse.illinois.edu/>
>
> <http://illinois.edu/>
>
> /Under the Illinois Freedom of Information Act any written 
> communication to or from university employees regarding university 
> business is a public record and may be subject to public disclosure./
>
>
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork
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From gheorghe.iordache at kaust.edu.sa  Wed Oct 27 06:28:37 2021
From: gheorghe.iordache at kaust.edu.sa (Gheorghe Iordache)
Date: Wed, 27 Oct 2021 10:28:37 +0000
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <7578d4aac8304d49b9af53c25c9e0dc9@SCBMCHP02.kaustcloud.com>

Hi Joe,
Masking to protect the Al contact pads from HF is tricky.
Not sure if you can change the structure but, if the sacrificial layer to free the devices would be silicon, you may consider the improved TMAH solution proposed in this paper: https://www.sciencedirect.com/science/article/pii/S092442470000546X?via%3Dihub
I used it to make sensors on suspended membranes with Al pads exposed some 20 years ago... :) and it works nicely. It's a bit time consuming to prepare... (https://www.researchgate.net/publication/237115771_Low-power_micro-scale_CMOS-compatible_silicon_sensor_on_a_suspended_membrane)
I hope it helps.

Kind regards,
=======================
Gheorghe IORDACHE, PhD Physics, MBA
Director, Nanofabrication Core Lab
KAUST
King Abdullah University of Science and Technology
Al Khawarizmi Building 1 East, Level 3, Office 3417
Thuwal 23955-6900
Kingdom of Saudi Arabia
Office:  +966 (0)12 8080447
Mobile: +966 (0)540381154
Email: gheorghe.iordache at kaust.edu.sa<mailto:gheorghe.iordache at kaust.edu.sa>
Personal email : gigi.iordache.business at gmail.com<mailto:gigi.iordache.business at gmail.com>
Linkedin: https://www.linkedin.com/in/gheorghe-iordache-phd-physics-mba/
[GI_Linkedin]
================
Please note that the weekend in Saudi Arabia is Friday and Saturday
========
What you do for yourself vanishes once you're gone.
What you do for others stays for others as your legacy.



From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Maduzia, Joseph Walter
Sent: 26 October 2021 23:49
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Mask of Al in HF

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/<https://urldefense.com/v3/__https:/cleanroom.mechse.illinois.edu/__;!!Nmw4Hv0!jSHwYTHtuoJ_pwCZFEA_d3Xu0-j4hFtiLKhB3jebNPpShjZJSWaMW0IXDJ5rUR1FH9vA4wiNXg$>

[cid:image001.png at 01D7CB36.023577D0]<https://urldefense.com/v3/__http:/illinois.edu/__;!!Nmw4Hv0!jSHwYTHtuoJ_pwCZFEA_d3Xu0-j4hFtiLKhB3jebNPpShjZJSWaMW0IXDJ5rUR1FH9tlJ8cK-A$>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From robert.macdonald at ge.com  Wed Oct 27 08:07:36 2021
From: robert.macdonald at ge.com (Macdonald, Robert (GE Research, US))
Date: Wed, 27 Oct 2021 12:07:36 +0000
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <CH2PR11MB42145A5B0BDF4C3E7EE470C7B2859@CH2PR11MB4214.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
 <CH2PR11MB42145A5B0BDF4C3E7EE470C7B2859@CH2PR11MB4214.namprd11.prod.outlook.com>
Message-ID: <cc68897350ba4d4ba94db289837905d1@ge.com>

HF vapor release may be an option. Various NNIN centers have these tools available for you.
Here is SPTS's sales brochure:

https://www.spts.com/assets/media/hf-intro-us-feb2021.pdf


From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Felix Lu
Sent: Tuesday, October 26, 2021 10:15 PM
To: Maduzia, Joseph Walter <jmaduzi2 at illinois.edu>; labnetwork at mtl.mit.edu
Subject: EXT: Re: [labnetwork] Mask of Al in HF

Hi Joe -

An HF etch with Al is tough. We had a similar problem about 10 years ago. From what I can recall, we changed the order of operations, evaporating Al through a shadow mask after the HF etch. This of course required a special jig. I'm happy to share more details if this approach is of interest to you.

Best,
Felix
___________________________________________________
Felix P. Lu, Ph.D.
Director of Corporate Engagement

Pritzker School of Molecular Engineering
The University of Chicago
Eckhardt Research Center
5640 S. Ellis Ave., Room ACC104
Chicago, IL 60637

773.834.5063 office

fplu at uchicago.edu<mailto:fplu at uchicago.edu> | pme.uchicago.edu<http://pme.uchicago.edu/>

From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> on behalf of Maduzia, Joseph Walter <jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>>
Date: Tuesday, October 26, 2021 at 8:07 PM
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu> <labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>>
Subject: [labnetwork] Mask of Al in HF
Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/<https://urldefense.com/v3/__https:/cleanroom.mechse.illinois.edu/__;!!BpyFHLRN4TMTrA!oFCVohVjcsYiYykvtYg6u7SZgKTbwTgxNvB0CPkQloOWlykw6lh26qLciNrEM7PY$>

[cid:image001.png at 01D7CB09.B26C1190]<https://urldefense.com/v3/__http:/illinois.edu/__;!!BpyFHLRN4TMTrA!oFCVohVjcsYiYykvtYg6u7SZgKTbwTgxNvB0CPkQloOWlykw6lh26qLciGAQ-lC5$>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From roberto.panepucci at cti.gov.br  Wed Oct 27 08:09:26 2021
From: roberto.panepucci at cti.gov.br (Roberto R. Panepucci)
Date: Wed, 27 Oct 2021 09:09:26 -0300 (BRT)
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <1228025516.9545481.1635336566165.JavaMail.zimbra@cti.gov.br>

Hi Joe, 
We switched to Au pads and also going to vapour HF to release SOI waveguides a while back (some 20yrs...). 
I am looking for a ?modern? solution for this as well, so I hope someone points out that nowadays compound X by company Y does this very easily... 
Cheers, 
Roberto 

----- 
Roberto R. Panepucci, PhD 
Associate Coordinator - CTINano 
Senior Researcher - CTI_DINAM/CGPS 
Centro de Tecnologia da Informa??o Renato Archer - CTI 
Minist?rio da Ci?ncia, Tecnologia e Inova??o - MCTI 
https://www.gov.br/mcti/pt-br/rede-mcti/cti 

----- Em 26 de Out de 2021, em 17:48, Maduzia, Joseph Walter <jmaduzi2 at illinois.edu> escreveu: 

> Hello,

> Does anyone have any suggestions for mask materials to protect Al in HF 49% for
> SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch
> to undercut and free devices, but have Al contact pads and AL is dep?d first.
> Typically we use PR as pattern mask, but the Al is etching behind the PR. In
> this case the Al is deposited first, so although order of operations change
> might help, it?s not a good option atm.

> Thank you for any suggestions you might have!

> JOE MADUZIA
> MNMS Laboratory Specialist

> The Grainger College of Engineering
> Mechanical Science and Engineering

> 2239 Sidney Lu Mechanical Engineering Bldg
> 1206 W. Green
> Urbana, IL 61801
> 217.244.6302 | [ mailto:jmaduzi2 at illinois.edu | jmaduzi2 at illinois.edu ]

> [ https://cleanroom.mechse.illinois.edu/ |
> https://cleanroom.mechse.illinois.edu/ ]

> [ http://illinois.edu/ ]

> Under the Illinois Freedom of Information Act any written communication to or
> from university employees regarding university business is a public record and
> may be subject to public disclosure.

> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork

--

Ressalva: Esta mensagem de correio eletr?nico do Centro de Tecnologia da Informa??o Renato Archer - CTI ? enviada exclusivamente a seu(s) destinat?rio(s) e pode conter informa??es confidenciais, protegidas por sigilo profissional. Sua utiliza??o desautorizada ? ilegal e sujeita o infrator ?s penas da lei. Se voc? a recebeu indevidamente, queira, por gentileza, reenvi?-la ao remetente, esclarecendo o equ?voco.



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From spaik8 at gatech.edu  Wed Oct 27 09:07:51 2021
From: spaik8 at gatech.edu (Paik, Seung Joon)
Date: Wed, 27 Oct 2021 13:07:51 +0000
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <BN3PR07MB26601E00F50788F9B33F0B98E4859@BN3PR07MB2660.namprd07.prod.outlook.com>

Hello Joe,

There are two papers about Al protection while etching sacrificial oxide layer, experimenting various mixtures of HF, NH4F, and Glycerin by volume. Though they are written in Korean, figures and tables are in English, so you can figure out where to start.

https://www.koreascience.or.kr/article/JAKO199900842576322.pdf
https://www.koreascience.or.kr/article/JAKO200000842576127.pdf

Good luck,

Seung-Joon Paik, Ph.D.
Senior Research Engineer
Instructional Lab Coordinator

Institute for Electronics and Nanotechnology (IEN)
Georgia Institute of Technology
spaik8 at gatech.edu



From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Maduzia, Joseph Walter
Sent: Tuesday, October 26, 2021 4:49 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Mask of Al in HF

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/

[cid:image001.png at 01D7CB11.1E0ED4D0]<http://illinois.edu/>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From duda at uchicago.edu  Wed Oct 27 09:37:33 2021
From: duda at uchicago.edu (Peter J Duda III)
Date: Wed, 27 Oct 2021 13:37:33 +0000
Subject: [labnetwork] Mask of Al in HF
In-Reply-To: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
References: <DM6PR11MB41054D2F449DF329673D3093ED849@DM6PR11MB4105.namprd11.prod.outlook.com>
Message-ID: <CO1PR11MB4916122119AFF115BF3410DCA9859@CO1PR11MB4916.namprd11.prod.outlook.com>

Joe
Couple of options here:

  1.  Vapor HF tools work well for mems structures where you need to etch SiO2 in the presence of Aluminum.  Side note: PR doesn't work as a mask for vapor HF either. Two manufacturers are:
     *   Memsstar - https://memsstar.com/mems-tools/vapor-hf-etching/  - We at UChicago have this tool.
     *   SPTS - https://www.spts.com/categories/hf-vapor-release-etch
  2.  Transene Al Pad Etch will etch SiO2 and is designed to minimally etch Al (Ammonium Fluoride based etch).  We have used this with a PR mask.

Thanks
Peter J Duda
Technical Director, Pritzker Nanofabrication Facility

Pritzker School of Molecular Engineering
University of Chicago
5640 South Ellis Avenue
ERC LL178
Chicago, IL  60637
Office: 773-702-8903
Pager/Text:  773-652-0480
duda at uchicago.edu<mailto:duda at uchicago.edu>
pme.uchicago.edu

From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Maduzia, Joseph Walter
Sent: Tuesday, October 26, 2021 3:49 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Mask of Al in HF

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/<https://urldefense.com/v3/__https:/cleanroom.mechse.illinois.edu/__;!!BpyFHLRN4TMTrA!pRewdscvX9zF5_QiAn7rt9C3NuhnQXA5SRZTaXeLQL3lfE8jcQKzdXBaMuX-a32Y$>

[cid:image001.png at 01D7CB0D.E167F960]<https://urldefense.com/v3/__http:/illinois.edu/__;!!BpyFHLRN4TMTrA!pRewdscvX9zF5_QiAn7rt9C3NuhnQXA5SRZTaXeLQL3lfE8jcQKzdXBaMhkT0YOk$>

Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.

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From joseph.christodoulides at nrl.navy.mil  Wed Oct 27 10:26:14 2021
From: joseph.christodoulides at nrl.navy.mil (Christodoulides, Joseph A CIV USN NRL (6395) Washington DC (USA))
Date: Wed, 27 Oct 2021 14:26:14 +0000
Subject: [labnetwork] SOI "Smart-Cut" wafer
Message-ID: <d7db94953e2d40be904ba36b372b8689@nrl.navy.mil>

Hello,



Does anyone have any suggestions for a vendor supplying SOI wafers utilizing the "Smart-Cut" technique? I believe that the company SOITEC, pioneered this technique but only sells in minimum quantity of 25 wafers.  We're trying to buy only one or two wafers (150 or 200 mm) instead of a full box which may cost tens of thousands. Thank you.



Joseph A. Christodoulides, Ph.D.

Research Physicist,

Material Science & Technology Division

U.S. Naval Research Laboratory

(202) 767-4393

www.nrl.navy.mil



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From optotinker at yahoo.com  Wed Oct 27 13:11:09 2021
From: optotinker at yahoo.com (Opto Tinker)
Date: Wed, 27 Oct 2021 17:11:09 +0000 (UTC)
Subject: [labnetwork] Manual for Perkin Elmer 1310 Infrared Spectrophotometer
References: <7287189.2282200.1635354669295.ref@mail.yahoo.com>
Message-ID: <7287189.2282200.1635354669295@mail.yahoo.com>

Hi,
?Is there a place for downloading manuals for this? I did a web search but could not find one.
Thank you!
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From Daniel.Pulver at ll.mit.edu  Wed Oct 27 16:28:51 2021
From: Daniel.Pulver at ll.mit.edu (Pulver, Daniel - 0835 - MITLL)
Date: Wed, 27 Oct 2021 20:28:51 +0000
Subject: [labnetwork] Lincoln Laboratory wafer fab engineering position
Message-ID: <BN1P110MB08180DC9F7DA675C33775918D3859@BN1P110MB0818.NAMP110.PROD.OUTLOOK.COM>

Labnetwork:

 

We have an opening on our process engineering team to help us develop and
build prototypes in CMOS, CCD imaging, photonic, superconductor, quantum,
and micromechanical integrated circuit technologies for national security
interests.  

 

Teamwork, curiosity, and US citizenship are required.  This is an on-site
position in Lexington, MA. We have some flexibility for candidate experience
levels.

 

https://careers.ll.mit.edu/job/Lexington-Assistant-Staff-Microfabrication-Pr
ocess-Engineer-MA-02420/806000700/ 

 

Dan Pulver

Microelectronics Laboratory Manager

MIT Lincoln Laboratory

Daniel.pulver at ll.mit.edu <mailto:Daniel.pulver at ll.mit.edu> 

781.981.1716 office

781.540.3906 mobile

 

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From sbyoo at ucdavis.edu  Wed Oct 27 17:37:52 2021
From: sbyoo at ucdavis.edu (S. J. Ben Yoo)
Date: Wed, 27 Oct 2021 14:37:52 -0700
Subject: [labnetwork] SOI "Smart-Cut" wafer
In-Reply-To: <d7db94953e2d40be904ba36b372b8689@nrl.navy.mil>
References: <d7db94953e2d40be904ba36b372b8689@nrl.navy.mil>
Message-ID: <10440678-38E2-45FE-A1ED-C42CE78DFB4F@ucdavis.edu>

Hello, Joseph,

Perhaps someone on this email list has more info, but as far as I know, SOITEC still has the patent on the ?Smart-Cut?  method.  As you mentioned, they have a minimum order quantity and no longer sells 150 mm wafers.

University Wafers sell SOI wafers I small quantities. 
https://order.universitywafer.com/default.aspx?cat=Silicon-on-Insulator%20(SOI)

Hope that helps.

Best,

-Ben
_______________________________________________________________________________

S. J. Ben Yoo
Joint Faculty LBL and UC Davis 
Distinguished Professor, Department of Electrical and Computer Engineering
Room 3110, Kemper Hall
Mail Code 1915
University of California
Davis, California 95616
Mobile: (510) 407-2457
Fax: (530) 752-8428
email: sbyoo at ucdavis.edu
home page: http://sierra.ece.ucdavis.edu
_______________________________________________________________________________ 

> On Oct 27, 2021, at 7:26 AM, Christodoulides, Joseph A CIV USN NRL (6395) Washington DC (USA) <joseph.christodoulides at nrl.navy.mil> wrote:
> 
> Hello,
>  
> Does anyone have any suggestions for a vendor supplying SOI wafers utilizing the ?Smart-Cut? technique? I believe that the company SOITEC, pioneered this technique but only sells in minimum quantity of 25 wafers.  We?re trying to buy only one or two wafers (150 or 200 mm) instead of a full box which may cost tens of thousands. Thank you.
>  
> Joseph A. Christodoulides, Ph.D.
> Research Physicist,
> Material Science & Technology Division
> U.S. Naval Research Laboratory 
> (202) 767-4393 
> www.nrl.navy.mil <http://www.nrl.navy.mil/>
>  
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu <mailto:labnetwork at mtl.mit.edu>
> https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork <https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork>
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From wengbinbin at hotmail.com  Wed Oct 27 17:59:00 2021
From: wengbinbin at hotmail.com (Binbin Weng)
Date: Wed, 27 Oct 2021 21:59:00 +0000
Subject: [labnetwork] SOI "Smart-Cut" wafer
In-Reply-To: <d7db94953e2d40be904ba36b372b8689@nrl.navy.mil>
References: <d7db94953e2d40be904ba36b372b8689@nrl.navy.mil>
Message-ID: <SG2PR02MB4460A466B09C15B78E830B02D4859@SG2PR02MB4460.apcprd02.prod.outlook.com>

Hi Joseph,

You can try university wafer (https://www.universitywafer.com/index.html). They sell SOI by pieces. The only problem is that the device and box thickness options are limited.

Best,

Binbin Weng
University of Oklahoma

From: Christodoulides, Joseph A CIV USN NRL (6395) Washington DC (USA)<mailto:joseph.christodoulides at nrl.navy.mil>
Sent: Wednesday, October 27, 2021 4:16 PM
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
Subject: [labnetwork] SOI "Smart-Cut" wafer

Hello,

Does anyone have any suggestions for a vendor supplying SOI wafers utilizing the ?Smart-Cut? technique? I believe that the company SOITEC, pioneered this technique but only sells in minimum quantity of 25 wafers.  We?re trying to buy only one or two wafers (150 or 200 mm) instead of a full box which may cost tens of thousands. Thank you.

Joseph A. Christodoulides, Ph.D.
Research Physicist,
Material Science & Technology Division
U.S. Naval Research Laboratory
(202) 767-4393
www.nrl.navy.mil


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