[labnetwork] Diffusion ZnO on InAs in forming gas

[Michael Yakimov]

This may be the cleanest option for Zn deposition:
http://desertsilicon.com/spin-on-glass/?fwp_doplant_spin=zinc

Prices are a bit eye watering (and shelf life is another hurting point, if I remember correctly), but that is a different story.
I am not sure if there are other suppliers, this is the only reasonable one Google had on the first page.



From: Andrei Alamariu <aandreib at gmail.com>
Sent: Wednesday, August 31, 2022 10:15
To: Michael Yakimov <yakimom at sunypoly.edu>
Cc: Brian K. Olmsted <olms0025 at umn.edu>; Steffen, Paul <steffen.8 at osu.edu>; labnetwork at mtl.mit.edu
Subject: Re: [labnetwork] Diffusion ZnO on InAs in forming gas

The all furnace Quartzware will be contaminated with Zn and other 3-5 related materials. The Zn makes a mess, indeed. You can cap the ZnO layer with a thin SiO2 layer; easy to remove with 10:1 HF solution and allows the Hydrogen/FG through diffusion. One issue is that the Si is a dopant too: however the dominant dopant is the ZnO at 450C.
That will avoid the messy Quartzware condition, as the SiO2 is not a barrier to Zn diffusion: and SiO2 should be deposited at low temperatures.
The main problem is where to deposit SiO2 on ZnO/ InAs without contaminating that system itself?
I am thinking of in situ Reactive sputtering of Zn in O2 followed by the SiO2 one.
Thanks, Bernard
Sent from my iPad


On Aug 30, 2022, at 8:20 PM, Michael Yakimov <yakimom at sunypoly.edu<mailto:yakimom at sunypoly.edu>> wrote:

GaAs starts losing Arsenic at around 400C, InAs is probably the same thing. It may not be a huge loss, but furnace will not be MOS clean ever.
I wonder what kind of ZnO source you are talking. Pure ZnO may be a problem. Spin on glass with Zn dopant may be a better idea both for Zn escape and As containment, especially if wafwr backside is taken care of as well.

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From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> on behalf of Brian K. Olmsted <olms0025 at umn.edu<mailto:olms0025 at umn.edu>>
Sent: Tuesday, August 30, 2022 5:13:08 PM
To: Steffen, Paul <steffen.8 at osu.edu<mailto:steffen.8 at osu.edu>>
Cc: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu> <labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>>
Subject: Re: [labnetwork] Diffusion ZnO on InAs in forming gas

Hi Paul,

Others may want to add to this with their experiences, but I have used ZnO in a retort furnace using a forming gas environment and the net result was Zn contamination so bad and persistent that the furnace was decommissioned and could not be used anymore.

Thanks,

Brian

On Tue, Aug 30, 2022 at 2:36 PM Steffen, Paul <steffen.8 at osu.edu<mailto:steffen.8 at osu.edu>> wrote:

Lab Network Community,



We have a request to diffuse ZnO on InAs in forming gas at 450 C for 1 hour in a horizontal furnace tube. Does anyone have experience with these materials in forming gas? Would the forming gas react with either material leading to decomposition and contamination of the furnace tube with Zn or As?



Thanks.



-Paul





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Paul Steffen
Lab Manager
Institute for Materials Research Nanotech West Lab
100 Science Village, 1381 Kinnear Road, Columbus, OH 43212
614-688-3546 Office / 614-688-3379 Fax
steffen.8 at osu.edu<mailto:steffen.8 at osu.edu> nanotech.osu.edu<http://nanotech.osu.edu>


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